Electron Blocking Layer Research Articles

Investigation on the performance of deep ultraviolet edge emitting laser diodes using graded undoped AlGaN electron blocking layer (EBL)

P-AlGaN EBLs are usually used to control the overflow of electrons from the multiple quantum wells (MQWs) in AlGaN-based deep ultraviolet (DUV) edge-emitting laser diodes (EELDs). They're specially designed to prevent the excess flow of electrons from the MQW. This control is essential for maintaining the laser's efficiency and performance. Using optimized parameters of Al composition through theoretical calculations using Crosslight software helps certify the electrically driven EELD functions effectively within the desired operational range. In this study, the traditional p-AlGaN EBL within the electrically driven EELD is substituted with an undoped AlGaN EBL. This modification aims to raise the effective barrier height of the conduction band, and thus effectively stopping the electron leakage while improving the injection of holes. By optimizing the aluminum composition in the current research, efforts are made to lower the threshold current (Ith) and elevate the overall enactment of the graded undoped AlGaN EBL EELD. Various structural designs, including both conventional and undoped configurations, have been successfully created and analyzed in this study. Particular attention was given to investigating the impact of grading techniques applied to the electron-blocking layer. The graded undoped AlGaN EBL EELD performed better than the highly doped AlGaN EBL EELD due to the minimized free carrier absorption loss. Specifically, it shows higher slope efficiency (S.E) of 1.45 W/A and a significantly lower Ith of 790 mA. A new AlGaN EBL EELD design was tested with different layers. The ones with a graded undoped EBLs performed better than traditional AlGaN EBL EELD, improving power efficiency. The graded undoped EBLs setup also reduced the threshold current compared to traditional AlGaN EBL EELD.

Atto-Scale Noise Near-Infrared Organic Photodetectors Enabled by Controlling Interfacial Energetic Offset through Enhanced Anchoring Ability.

The near-infrared (NIR) sensor technology is crucial for various applications such as autonomous driving and biometric tracking. Silicon photodetectors (SiPDs) are widely used in NIR applications; however, their scalability is limited by their crystalline properties. Organic photodetectors (OPDs) have attracted attention for NIR applications owing to their scalability, low-temperature processing, and notably low dark current density (JD), which is similar to that of SiPDs. However, the still high JD (at NIR band) and few measurements of noise equivalent powers (NEPs) pose challenges for accurate performance comparisons. This study addresses these issues by quantitatively characterizing the performance matrix and JD generation mechanism using electron-blocking layers (EBLs) in OPDs. The energy offset at an EBL/photosensitive layer interface determines the thermal activation energy and directly affects JD. A newly synthesized EBL (3PAFBr) substantially enhances the interfacial energy barrier by forming a homogeneous contact owing to the improved anchoring ability of 3PAFBr. As a result, the OPD with 3PAFBr yields a noise current of 852 aA (JD = 12.3 fAcm⁻2 at V → -0.1V) and several femtowatt-scale NEPs. As far as it is known, this is an ultralow ofJD in NIR OPDs. This emphasizes the necessity for quantitative performance characterization.

Formation of a potential barrier by a ZnSXSe1−X electron-blocking layer to improve the efficiency of CdSe0.3S0.7/CdSe quantum dot sensitized solar cells

We designed and fabricated multilayer quantum dots sensitized solar cells (QDSCs) with TiO2 NPs/CdSe0.3S0.7/CdSe/ZnSXSe1−X, X = S/S + Se = 0, 0.7, 0.8, 0.9, and 1 photoelectrodes to achieve optimum power conversion efficiency (PCE). In the corresponding structure, incoming light is absorbed by the CdSe0.3S0.7 and CdSe quantum dots (QDs), while the ZnSXSe1−X QDs act as an electron blocking layer or passivation layer, forming an energy barrier that restricts electron mobility from the light absorbers to the polysulfide electrolyte. The beneficial effect of the alloyed ZnSXSe1−X layer is the adjustability of its nanoparticle size/bandgap energy proportional to variations in the concentration of anionic precursors X, according to optical results. The PCE value of the reference cell with the TiO2 NPs/CdSe0.3S0.7/CdSe photoanode is 4.15 %. Following the coating of ZnSe, ZnS0.7Se0.3, ZnS0.8Se0.2, ZnS0.9Se0.1, and ZnS QDs via two successive ionic layer adsorption and reaction (SILAR) cycles (2Sc) on the CdSe0.3S0.7/CdSe co-sensitized photoelectrode increasing stability and improving the PCE value to 4.9 %, 5.40 %, 5.70, 5.25 %, and 5.05 %, respectively. Next, by modifying the thickness of the champion cell's passivation layer, the QDSCs with TiO2 NPs/CdSe0.3S0.7/CdSe/ZnS0.8Se0.2 (3Sc) photoelectrode exhibit maximum photovoltaic performance parameters of short circuit current density (JSC) = 26.25 mA/cm2, open circuit voltage (VOC) = 560 mV, fill factor (FF) = 0.42 % and PCE = 6.15 %. This improvement in performance is the result of decreased internal energy loss and recombination of charge carriers at the interface between the electrolyte and photoelectrode, which increases electron collection efficiency and electron injection efficiency in the visible region according to the external and internal quantum efficiency curves.

Metal-modulated epitaxy of Mg-doped Al0.80In0.20N-based layer for application as the electron blocking layer in deep ultraviolet light-emitting diodes

This work reports the growth and characterization of p-AlInN layers doped with Mg by plasma-assisted molecular beam epitaxy (PAMBE). AlInN was grown with an Al molar fraction of 0.80 by metal-modulated epitaxy (MME) with a thickness of 180 nm on Si(111) substrates using AlN as buffer layers. Low substrate temperatures were used to enhance the incorporation of indium atoms into the alloy without clustering, as confirmed by X-ray diffraction (XRD). Cathodoluminescence measurements revealed ultraviolet (UV) range emissions. Meanwhile, Hall effect measurements indicated a maximum hole mobility of 146 cm2/(V∙s), corresponding to a free hole concentration of 1.23 × 1019 cm−3. The samples were analyzed by X-ray photoelectron spectroscopy (XPS) estimating the alloy composition and extracting the Fermi level by valence band analysis. Mg-doped AlInN layers were studied for use as the electron-blocking layer (EBL) in LED structures. We varied the Al composition in the EBL from 0.84 to 0.96 molar fraction to assess its theoretical effects on electroluminescence, carrier concentration, and electric field, using SILVACO Atlas. The results from this study highlight the importance and capability of producing high-quality Mg-doped p-AlInN layers through PAMBE. Our simulations suggest that an Al content of 0.86 is optimal for achieving desired outcomes in electroluminescence, carrier concentration, and electric field.

Low parasitic carrier reservoir of AlGaN-based DUV-LED via controlled-polarization step-graded superlattice electron blocking layer for high luminescence lighting

Achieving high luminescence intensity of deep-ultraviolet light-emitting diode (DUV-LED) is generally performed through the implementation of electron blocking layer (EBL) on the chip’s epilayers. However, the issue of parasitic carrier reservoir that originated from the uncontrolled piezoelectric field polarization has restricted the performance of DUV-LED by reducing the radiative recombination in the active region. This work reports on the numerical computation analysis of the DUV-LED with different types of EBL designs which are reference EBL, conventional superlattice EBL and step-graded superlattice EBL. The analysis of the DUV-LED focuses on the band diagram, carrier concentration at the EBL interfaces, current density of the carrier in the active region, radiative recombination rates, and luminescence spectrum. Remarkably, it is found that the DUV-LED step-graded superlattice EBL provides the polarization-controlled band diagram and emits 272 nm UVC-wavelength in which it is superior in performance compared to the other structures, specifically in terms of its radiated intensity. The parasitic electron and hole reservoir have been reduced by 30% and 60%, respectively. The luminescence intensity was also enhanced by 11% compared with the reference EBL and the IQE obtained by the DUV-LED with step-graded superlattice EBL is 50.12%.

Improved Design of Slope-Shaped Hole-Blocking Layer and Electron-Blocking Layer in AlGaN-Based Near-Ultraviolet Laser Diodes.

The injection and leakage of charge carriers have a significant impact on the optoelectronic performance of GaN-based lasers. In order to improve the limitation of the laser on charge carriers, a slope-shape hole-barrier layer (HBL) and electron-barrier layer (EBL) structure are proposed for near-UV (NUV) GaN-based lasers. We used Crosslight LASTIP for the simulation and theoretical analysis of the energy bands of HBL and EBL. Our simulations suggest that the energy bands of slope-shape HBL and EBL structures are modulated, which could effectively suppress carrier leakage, improve carrier injection efficiency, increase stimulated radiation recombination rate in quantum wells, reduce the threshold current, improve optical field distribution, and, ultimately, improve laser output power. Therefore, using slope-shape HBL and EBL structures can achieve the superior electrical and optical performance of lasers.

Maximizing Conversion Efficiency: A Numerical Analysis on P+ a-SiC/i Interface/n-Si Heterojunction Solar Cells with AMPS-1D

In this study, a heterojunction (P+ a-SiC/i intrinsic/n-Si) solar cell has been examined and characterized using the Analysis of Microelectronics and Photonic Structures (AMPS-1D) simulator. In this heterojunction solar cell, an intrinsic layer is imposed to enhance the efficiency and performance. The optimum efficiency of 36.52% (Voc=1.714 V, Jsc=27.006 mA/cm2, and FF=0.789) has been achieved with this intrinsic layer. It has also been observed the solar cell without intrinsic layer. In this case, the maximum efficiency of 2.378% has been observed which is very poor. The heterojunction solar cell also has been investigated with electron blocking layer (EBL) and defect layer. In this case, the simulation result shows the lower efficiency (34.357%) than the previous. This research paper introduces an optimized model of a heterojunction solar cell enhanced with an intrinsic layer to improve efficiency. The proposed design shows significant promise in its theoretical framework. Looking forward, the design could be realized in laboratory settings and has the potential to be scaled up for broader applications.

Developing Deep Ultraviolet Laser Diode: Design and Improvement of Al0.62Ga0.38N/Al0.68Ga0.32N Quantum Wells on AlN Substrates for 266 nm DUV Emission

A deep ultraviolet (DUV) laser diode is a compact and efficient semiconductor device that emits laser light in the deep ultraviolet range. Its unique properties make it suitable for a wide range of applications in fields such as manufacturing, research, and healthcare. In this research we propose two Al-graded Electron Blocking Layer (EBL) and quantum barriers (QBs) to improve the performance of AlGaN-based Deep UV-LDs. The electrical properties and optical properties of three structures containing conventional EBL, composition graded increased EBL, and liner graded increased of EBL and QBs were numerically investigated. It was found that the structure-C with linear graded increased EBL and QBs significantly improved the Optical Confinement Factor (OCF) 21%, gain 1600 cm-1, emission power 0.060 W, raised the carrier concentration in the MQWs region, enhanced the stimulated recombination rate and reduced the carrier leakage, of the laser diode (LDs). But at a 100-mA injection current, the threshold current and voltage were reduced to 43 mA and 5.00 V, valance barrier height 270 meV respectively. In compare to the conventional structure, introducing a graded design for both EBL and Quantum Barriers (QBs) with increased aluminum content significantly enhanced the performance of the laser diode (LD). This improvement is essential for advancing Deep Ultraviolet Laser Diodes (DUV-LD) technology.

Inkjet-printed multilayer structure for low-cost and efficient OLEDs

Inkjet printing is considered a key technology in the fabrication of organic light-emitting diodes (OLEDs), but achieving a fully inkjet-printable OLED structure is still a challenge. Here, we propose the fabrication of OLEDs with an inkjet-printed multilayer structure (i.e. anode/hole injection layer (HIL)/electron blocking layer (EBL)/emitting layer (EML)) by properly developing new HIL and EBL inks to achieve uniform and homogeneous printed thin films. In the fabricated multilayer device, the dissolution process of the EBL, which occurs during the printing of the EML, creates a blurred interface, resulting in device performance that achieves maximum current efficiencies of 20 cd/A and 7 cd/A with ITO and printed polymeric anode, respectively. With the aim of simplifying the structure of the device and mimicking the formation of such a blurred interface, another printed multilayer structure (i.e. anode/printed HIL/printed EBL:EML) was proposed, achieving maximum current efficiencies of 13 and 6 cd/A with ITO and polymeric anode, respectively. Such results represent a compromise between simplifying the fabrication process and achieving good electro-optical properties and thus represent a further step towards the fabrication of a fully inkjet-printed ITO-free OLED.

Optimization of AlGaN-based deep ultraviolet light emitting diodes with superlattice step doped electron blocking layers.

The superlattice electron blocking layer (EBL) has been proposed to reduce the electron leakage of the deep ultraviolet light emitting diodes (DUV-LEDs). However, the hole transport is hindered by the barriers of EBL and the improvement of hole injection efficiency still suffers enormous challenges. The superlattice step doped (SLSD) EBL is proposed to improve the hole injection efficiency while enhancing the electron confinement capability. The SLSD EBL enhances the electron confinement capability by multi-reflection effects on the electron wave function. And a built-in electric field towards the active region is generated by superlattice step doping, which facilitates the transport of holes into the multiple quantum wells. The Advaced Physical Model of Semiconductor Devices (APSYS) software is used to simulate the DUV-LEDs with conventional EBL, superlattice EBL, superlattice doped EBL, and SLSD EBL. The results indicate that the SLSD EBL contributes to the increased electron concentration in the multiple quantum wells, the reduced electron leakage in the p-type region, the increased hole injection current, and the increased radiative recombination rate. When the current is 60 mA, the external quantum efficiency of DUV-LED with SLSD EBL is increased to 5.27% and the output power is increased to 13.81 mW. The SLSD EBL provides a valuable reference for solving the problems of serious electron leakage and insufficient hole injection of the DUV-LEDs.

Non-heavy doped pnp-AlGaN tunnel junction for an efficient deep-ultraviolet light emitting diode with low conduction voltage.

While traditional tunnel junction (TJ) light-emitting diodes (LEDs) can enhance current diffusion and increase hole injection efficiency, their reliance on highly doped AlGaN layers to improve hole tunneling efficiency results in a higher conduction voltage, adversely impacting LED device performance. This paper proposes a non-heavy doped pnp-AlGaN TJ deep ultraviolet (DUV) LED with a low conduction voltage. By inserting the TJ near the active region, between the electron blocking layer and the hole supply layer, the need for heavily doped AlGaN is circumvented. Furthermore, the LED leverages the polarization charge in the pnp-AlGaN TJ layer to decrease the electric field strength, enhancing hole tunneling effects and reducing conduction voltage. The non-heavy doped pnp-AlGaN TJ LED effectively enhances carrier concentration in the quantum well, achieving a more uniform distribution of electrons and holes, thus improving radiative recombination efficiency. Consequently, at an injection current of 120 A/cm2, compared to the traditional structure LED (without TJ), the proposed LED exhibits a 190.7% increase in optical power, a 142.8% increase in maximum internal quantum efficiency (IQE) to 0.85, and a modest efficiency droop of only 5.8%, with a conduction voltage of just 4.1V. These findings offer valuable insights to address the challenges of high heavy doped TJ and elevated conduction voltage in high-performance TJ DUV LEDs.

Controlling GaN-Based Laser Diode Performance by Variation of the Al Content of an Inserted AlGaN Electron Blocking Layer.

The leakage of the electronic current of a laser diode (LD) has some significant influences on the performance of the LD. In this study, commercial simulation software LASTIP is used to numerically evaluate the performances of LDs by using different wavelengths and Al contents of the electron blocking layer (EBL). These LDs a adopt multilayer structure, which contains cladding layers, waveguide layers, multiple quantum well layers, contact layers and an AlxGa1-xN EBL. The influence mechanism of EBL is theoretically examined by analyzing the simulated performances. It is found that for short-wavelength violet LDs, the electrical and optical properties of the LD will reach the optimum state when the Al content (x) in the EBL is nearly 0.25. For long-wavelength green LDs, it will achieve optimum electrical and optical properties when the Al content in the EBL is as low as possible. We also compare the simulation results of LDs with emission wavelengths in the range of violet and green, including blue cyan, for a more general evaluation. According to the simulated results, it is verified that the influence of the EBL's Al content on LD performance enhances as the wavelength increases.

Integrating interface engineering and plasmonic effect to boost photoresponse performance of ZnO:Ga/GaN heterojunction self-powered UV photodetectors

The ability to function without an external power supply makes photodetectors highly promising for use in a new generation of wirelessly and independently operated ultraviolet (UV) photodetection and imaging systems. However, self-powered photodetectors' high dark current, inadequate light harvesting, and poor carrier separation prevent them from attaining high-efficiency UV photodetection and imaging. Herein, a high-performance heterojunction UV photodetector consisting of a single Ga-doped ZnO microwire enshrouded by Ag nanowires (AgNWs@ZnO:Ga MW), a MgO electron blocking layer, and a p-type GaN wafer was proposed. Taking full advantage of the interface engineering and plasmonic effects, the AgNWs@ZnO:Ga MW/MgO/GaN photodetector achieves high photodetection performance with an excellent responsivity of 262 mA/W, a remarkable external quantum efficiency of 92.37%, and a high detectivity of 1.966 × 1012 Jones under 370 nm illumination with power density of 0.22 mW/cm2. Furthermore, it also demonstrates ultrafast pulsed photoresponse speed with a rise/fall time of 3.64 μs/252 μs. An UV imaging system is designed based on the AgNWs@ZnO:Ga MW/MgO/GaN self-powered photodetector, allowing for high-quality, accurate, and distinct object imaging. This work combines interface engineering and plasmonic effects for achieving high-performance UV photodetection, which provides a strategic approach to the development of highly efficient optoelectronic devices.

Enhancement of lifetime in blue triplet-triplet-fusion organic light-emitting diodes with fluorenyl amine- and triphenyl silane-based electron blocking layers

We report fluorenyl amine-based electron blocking layers (EBLs) N,9,9-triphenyl-N-(4′-(triphenylsilyl)-[1,1′-biphenyl]−4-yl)−9 H-fluoren-2-amine (P-pSi-DPFA), N,9,9-triphenyl-N-(3-(triphenylsilyl)phenyl)−9 H-fluoren-2-amine (P-mSi-DPFA), and N-([1,1′-biphenyl]−4-yl)−9,9-diphenyl-N-(3-(triphenylsilyl)phenyl)−9 H-fluoren-2-amine (BP-mSi-DPFA) that prevent intermolecular interactions with emissive layer (EML). Triplet-triplet fusion (TTF)-based organic light-emitting diodes (OLEDs) use anthracene derivatives as hosts, and due to the electron-rich nature of anthracene core, the recombination zone is predominantly formed at the EBL/EML interface. Therefore, it is important to control the intermolecular interaction between EBL and EML while also having an EBL with suitable hole transport characteristics and an appropriate highest occupied molecular orbital (HOMO) level. We developed TTF-based OLED achieving up to 1489 hours (LT50 at 500 cd/m2) using P-pSi-DPFA as the EBL, securing hole transport characteristics through a fluorenyl amine core, and preventing unwanted intermolecular interactions with the EML by substituting triphenyl silane into the amine core.

Deep-ultraviolet LEDs with an Al-graded p-AlGaN layer exhibiting high wall-plug efficiency and high modulation bandwidth simultaneously

This work demonstrated a deep-ultraviolet (DUV) LED with an Al-graded p-AlGaN contact layer above the electron blocking layer to alleviate p-type contact resistance, the asymmetry of carriers transport, and the polarization effect. The fitting results from the ABC + f(n) model revealed that the LED has a higher radiative recombination coefficient than the conventional structures ever reported, which contributes to a lower carrier lifetime. The light output power of the LED at 350 mA is 44.71 mW, the peak external quantum efficiency (EQE) at 22.5 mA is 5.12%, the wall-plug efficiency at 9 mA is 4.40%. The 3 dB electrical-to-optical modulation bandwidth of the graded p-AlGaN contact layer LED is 390 MHz after impedance matching. In short, this study provides an in-depth analysis of the physical mechanism of the enhanced EQE and decreased carrier lifetime of DUV LEDs with Al-graded AlGaN as a p-type contact layer.

Semi-classical physics based model in AlGaN/BGaN based ultraviolet LED with p-AlGaN layer sandwiched around electron-blocking layer for droop-free efficiency

—This work reports the droop-free efficiency of an Ultraviolet Light Emitting Diode (UV LED) of a Multiple Quantum Well (MQW) with an Electron Blocking Layer (EBL) sandwiched with a p-AlGaN layer. In the proposed device structure, the BGaN Quantum Well's thickness and boron content are set at 3 nm and 10%, respectively. The simulation is carried out by using various physical models such as K.P. model, Auger recombination model, Shcokley-Reed-Hall (SRH) recombination model, and Lorentz model to produce realistic optical performances. Internal Quantum Efficiency, Output Luminous power, and radiative recombination rate are the variables examined in this study. The addition of a thin p-AlGaN layer reduces the polarization effect, which in turn minimizes electron leakage to the p-type layer while increasing the effectiveness of hole injection via intra-band tunneling. A semi-classical physics-based model is developed to comprehend the effect of radiative and non-radiative recombination mechanisms. It is discovered that the simulated results and modeled results match quite well.

Study of ultraviolet light emitting diodes with InGaN quantum dots and lattice matched superlattice electron blocking layers.

Ultraviolet light emitting diodes (UV-LEDs) face the challenges including insufficient hole injection and severe electron leakage. Quantum dots (QDs) have been proven to provide three-dimensionally localized states for carriers, thereby enhancing carrier confinement. Therefore, UV-LEDs employing InGaN QDs are designed and studied in this paper. The APSYs software is used to simulate UV-LEDs. Simulation results indicate that the QDs effectively improve the electron and hole concentration in the active region. However, UV-LEDs with QDs experience efficiency droop due to serious electron leakage. What's more, the lattice mismatch between last quantum barrier (LQB) and electron blocking layer (EBL) leads to the polarization field, which induces the downward band bending at the LQB/EBL interface and reduces effective barrier height of EBL for electrons. The AlInGaN/AlInGaN lattice matched superlattice (LMSL) EBL is designed to suppress electron leakage while mitigating lattice mismatch between LQB and EBL. The results indicate that the utilization of QDs and LMSL EBL contributes to increasing the electron and hole concentration in the active region, reducing electron leakage, enhancing radiative recombination rate, and reducing turn-on voltage. The efficiency droop caused by electron leakage is mitigated. When the injection current is 120 mA, the external quantum efficiency is increased to 9.3% and the output power is increased to 38.3 mW. This paper provides a valuable reference for addressing the challenges of insufficient hole injection and severe electron leakage.

Performance improvement of 263 nm AlGaN DUV LDs with different doping concentration and composition graded EBL Techniques

As part of this study, we present a study on the act of electrically driven Laser Diode (LD) using trinary Aluminum Gallium Nitride (AlGaN) with optimized doping concentrations. To increase the LD’s output power and capabilities, we focused on utilizing different doping concentrations in the electron-blocking layer (EBL). We conducted the calculations with PICS 3D software; we obtained simulation results indicating that the designed LD structure successfully emitted an ultraviolet (UV) laser class-c at a wavelength of 263.7 nm. By implementing this approach, we anticipate achieving higher optical output power by 6%, enhancing the concentration of electron and hole, and reducing the electron current density (356.1 to 342.8) and threshold voltage (4.516 to 4.5 V), and hole current density increases in AlGaN-based ultraviolet LDs. These promising outcomes can be attributed to the effective conduction band barrier height achieved by the optimized electron-blocking layer (EBL).

Enhanced Photocurrent and Electrically Pumped Quantum Dot Emission from Single Plasmonic Nanoantennas.

Integrating cavity-enhanced colloidal quantum dots (QDs) into photonic chip devices would be transformative for advancing room-temperature optoelectronic and quantum photonic technologies. However, issues with efficiency, stability, and cost remain formidable challenges to reach the single antenna limit. Here, we present a bottom-up approach that delivers single QD-plasmonic nanoantennas with electrical addressability. These QD nanojunctions exhibit robust photoresponse characteristics, with plasmonically enhanced photocurrent spectra matching the QD solution absorption. We demonstrate electroluminescence from individual plasmonic nanoantennas, extending the device lifetime beyond 40 min by utilizing a 3 nm electron-blocking polymer layer. In addition, we reveal a giant voltage-dependent redshift of up to 62 meV due to the quantum-confined Stark effect and determine the exciton polarizability of the CdSe QD monolayer to be 4 × 10-5 meV/(kV/cm)2. These developments provide a foundation for accessing scalable quantum light sources and high-speed, tunable optoelectronic systems operating under ambient conditions.

Visible-blind near-infrared organic photodetectors

The presently available commercial photodetectors have a broadband photoresponse and require different external optical filters to block the undesired light outside the detection spectrum window, e.g., near-infrared (NIR) detection. The use of an NIR bandpass has technical limitations in curved or flexible large-area photodetectors, as an NIR bandpass depends critically on the difference in the interference of the optical path in the filter. This work reports the effort to develop a high-performance filter-free organic photodetector (OPD) with a double bulk heterojunction (BHJ) structure. The visible-blind NIR photodetection is realized by eliminating the photocurrent generated in the front visible light-absorbing BHJ optical depletion layer, due to the suppression of electron transport by incorporating a copper thiocyanate-based electron-blocking layer in the OPD. Only excitons generated in the rear NIR-absorbing BHJ contribute to photocurrent in the OPD, thereby achieving visible-blind NIR photodetection. The double BHJ OPD has a high responsivity of 0.38 A/W at 1050 nm and a specific detectivity of >1013 Jones over the wavelength range from 800 to 1050 nm, making it an ideal candidate for applications in optical communication, food quality detection, wellness monitoring, and NIR image sensors.