Electron Beam Lithography Research Articles

Improving the Lithography Sensitivity of Atomically Precise Tin-Oxo Nanoclusters via Heterometal Strategy.

Tin-oxo clusters are increasingly recognized as promising materials for nanolithography technology due to their unique properties, yet their structural impacts on lithography performance remain underexplored. This work explores the structural impacts of heterometal strategies on the performance of tin-oxo clusters in nanolithography, focusing on various metal dopants and their coordination geometries. Specifically, SnOC-1(In), SnOC-1(Al), SnOC-1(Fe), and SnOC-2 were synthesized and characterized. These clusters demonstrate excellent solubility, dispersibility, and stability, facilitating the preparation of high-quality films via spin-coating for lithographic applications. Notably, this work innovatively employs nano-infrared (nano-IR), neutron reflectivity (NR), and X-ray reflectivity (XRR) measurements to confirm film homogeneity. Upon electron beam lithography (EBL), all four materials achieve 50 nm line patterns, with SnOC-1(In) demonstrating the highest lithography sensitivity. This enhanced sensitivity is attributed to indium dopants, which possess superior EUV absorption capabilities and unsaturated coordination environments. Further studies on exposure mechanisms indicated that Sn-C bond cleavage generates butyl free radicals, promoting network formations that induce solubility-switching behaviors for lithography. These findings underscore the efficacy of tailored structural design and modulation of cluster materials through heterometal strategies in enhancing lithography performance, offering valuable insights for future material design and applications.

Improving the Lithography Sensitivity of Atomically Precise Tin‐Oxo Nanoclusters via Heterometal Strategy

Tin‐oxo clusters are increasingly recognized as promising materials for nanolithography technology due to their unique properties, yet their structural impacts on lithography performance remain underexplored. This work explores the structural impacts of heterometal strategies on the performance of tin‐oxo clusters in nanolithography, focusing on various metal dopants and their coordination geometries. Specifically, SnOC‐1(In), SnOC‐1(Al), SnOC‐1(Fe), and SnOC‐2 were synthesized and characterized. These clusters demonstrate excellent solubility, dispersibility, and stability, facilitating the preparation of high‐quality films via spin‐coating for lithographic applications. Notably, this work innovatively employs nano‐infrared (nano‐IR), neutron reflectivity (NR), and X‐ray reflectivity (XRR) measurements to confirm film homogeneity. Upon electron beam lithography (EBL), all four materials achieve 50 nm line patterns, with SnOC‐1(In) demonstrating the highest lithography sensitivity. This enhanced sensitivity is attributed to indium dopants, which possess superior EUV absorption capabilities and unsaturated coordination environments. Further studies on exposure mechanisms indicated that Sn–C bond cleavage generates butyl free radicals, promoting network formations that induce solubility‐switching behaviors for lithography. These findings underscore the efficacy of tailored structural design and modulation of cluster materials through heterometal strategies in enhancing lithography performance, offering valuable insights for future material design and applications.

Thermally tunable microring resonators based on germanium-on-insulator for mid-infrared spectrometer

We present a thermally tunable microring resonator (MRR) implemented on a Ge-on-insulator (Ge-OI) photonic platform tailored for mid-infrared spectrometer applications. Thanks to the favorable thermo-optic effect of Ge, we characterized the optical and thermal properties of the thermally tunable Ge-OI MRR through rigorous optical and thermal numerical analyses. Building upon the simulation, a ring-shaped Au heater was successfully integrated into the Ge-OI MRR that was fabricated by using a direct wafer bonding process, followed by electron-beam lithography and dry etching techniques. Observations via thermo-reflectance microscopy revealed the temperature change within the Ge induced by heat transfer from the applied bias to the Au heater. Notably, the measured temperature change of 17 K at an applied electrical power of 181.7 mW closely aligned with the simulated values. In optical measurement, the heater-integrated Ge-OI MRR exhibited the tunability of 33.7 nm/W (0.36 nm/K) and the loaded Q factor of 21k at 4.2 µm wavelength with no bias. Hence, our demonstration of the Ge-OI tunable ring filter for mid-IR spectrometers could be a promising technology employing photonic integrated circuits for diverse applications in optical communication and spectral sensing.

Micro-nanojauges design to monitor surface mechanical state during high temperature oxidation of metals with application to 17-4PH stainless steel

Determination of mechanical state of thermal oxide growing during high temperature oxidation is a challenge. Fabrication of nanogauges for monitoring during high temperature oxidation was presently investigated up to 1000 °C. Several materials were tested in terms of mechanical behaviour and maximum working temperature for gauges used as markers during thermal loading under air. The experimental determination of the optimized gauges material for high temperature oxidation was validated. SiO2 offers particularly interesting features for gauges to determine the mechanical state of metal/oxide system. In this article, a special attention has also been paid to two nano-fabrication processes, as well as their limits. The standard electron beam lithography process is well suited to build gauges for oxidation applications, and can be improved by use of reactive ion etching process. The gauges can eventually reach several micrometers height such that the oxidation layer does not cover the gauges during thermal loading for relevant monitoring at short oxidation times. To illustrate, an application to a 17-4PH stainless steel oxidized at 480 °C is proposed and stress kinetics are deduced and related to an advanced thermomechano-chemical model, as well as identification of the numerical values of different thermomechano-chemical parameters associated to mechanisms of growth or relaxation.

E-beam Lithography Technology for Quantum Device Fabrication and Nanoscale Patterning

Currently nanotechnology becoming more important with the implementation of nano devices including quantum devices. In this paper, we will briefly introduce the JEOL JBX-8100FS e-beam lithography tool which was recently installed in Hallym University and the current status of the exposure conditions set up. As applications using e-beam lithography tool, we will introduce Schottky barrier single hole transistor and silicon nanowire thermoelectric device, respectively. We are under researching plasmonic and quantum devices as basic research.

Conjugated Polymer-Based Photo-Crosslinker for Efficient Photo-Patterning of Polymer Semiconductors.

Photo-patterning of polymer semiconductors using photo-crosslinkers has shown potential for organic circuit fabrication via solution processing techniques. However, the performance of patterning, including resolution (R), UV light exposure dose, sensitivity (S), and contrast (γ), remains unsatisfactory. In this study, a novel conjugated polymer based photo-crosslinker (PN3, Figure 1a) is reported for the first time, which entails phenyl-substituted azide groups in its side chains. Due to the potential π-π interactions between the conjugated backbone of PN3 and those of polymer semiconductors, PN3 exhibits superior miscibility with polymer semiconductors compared to the commonly used small molecule photo-crosslinker 4Bx (Figure 1a). Consequently, photo-patterning of polymer semiconductors with PN3 demonstrates improved performance with much lower UV light exposure dose, higher S and higher γ compared to 4Bx. By utilizing electron beam lithography, patterned arrays of polymer semiconductors with resolutions down to 500nm and clearer edges are successfully fabricated using PN3. Furthermore, patterned arrays of PDPP4T, the p-type semiconductor (Figure 1b), after being doped, can function as source-drain electrodes for fabricating field-effect transistors (FETs) with comparable charge mobility and significantly lower sub-threshold swing value compared to those with gold electrodes.

Tunable Plasmon Resonance in Silver Nanodisk-on-Mirror Structures and Scattering Enhancement by Annealing.

In this study, we evaluated the surface plasmon characteristics of periodic silver nanodisk structures fabricated on a dielectric thin-film spacer layer on a Ag mirror substrate (NanoDisk on Mirror: NDoM) through finite difference time domain (FDTD) simulations and experiments involving actual sample fabrication. Through FDTD simulations, it was confirmed that the NDoM structure exhibits two sharp peaks in the visible range, and by adjusting the thickness of the spacer layer and the size of the nanodisk structure, sharp peaks can be obtained across the entire visible range. Additionally, we fabricated the NDoM structure using electron beam lithography (EBL) and experimentally confirmed that the obtained peaks matched the simulation results. Furthermore, we discovered that applying annealing at an appropriate temperature to the fabricated structure enables the adjustment of the resonance peak wavelength and enhances the scattering intensity by approximately five times. This enhancement is believed to result from changes in the shape and size of the nanodisk structure, as well as a reduction in grain boundaries in the metal crystal due to annealing. These results have the potential to contribute to technological advancements in various application fields, such as optical sensing and emission enhancement.

Single‐Component High‐Resolution Dual‐Tone EUV Photoresists Based on Precision Self‐Immolative Polymers

Electron beam (EB) and extreme ultraviolet (EUV) lithography are advanced techniques capable of achieving sub‐10 nm resolutions, critical for fabricating next‐generation nanostructures and semiconductor devices. However, developing EUV photoresists that meet all demands for resolution, line edge roughness (LER), and sensitivity (RLS) remains a significant challenge. Herein, we introduce high‐performance photoresists based on single‐component self‐immolative polymers (SIPs) with inherent signal amplification via cascade degradation. These SIPs function as dual‐tone photoresists under both EB and EUV lithography, with performance primarily determined by the exposure dose. Lithographic evaluations show that discrete SIPs provide significant improvements over disperse counterparts, achieving higher resolution and reduced LER. Specifically, a discrete SIP with a DP of 12 produces a line‐space pattern with a resolution of approximately 18 nm and an LER of 1.8 nm, compared to 21 nm resolution and 2.5 nm LER for disperse SIPs. Additionally, these SIP‐based photoresists, enriched with aromatic structures, exhibit excellent etch resistance. The single‐component nature and potential to address the RLS trade‐off underscore the promise of discrete SIPs for EUV lithography.

Optimizing dose parameters for enhanced maskless lithography in MoS2-based devices

Maskless lithography simplifies the fabrication process and reduces costs compared to electron beam (E-beam) lithography, making it a more efficient choice for patterning nano-devices. Maskless lithography presents a promising avenue for expediting device fabrication by eliminating the need for masks. This technique can streamline the production of basic electronic devices, offering an efficient and low-cost alternative to traditional lithographic methods, like E-beam lithography. This study utilized a 405 nm photodiode to achieve pattern-writing with a minimum linewidth of 1 μm. Exploring optimal parameters includes adjustments in beam intensity, scan speed, and step size. Maskless lithography was applied to 2D transition metal dichalcogenides (TMDCs) material, MoS2, to investigate their electrical transport characteristics. The fabricated device exhibits an ON/OFF ratio of ∼1.7 × 106 and a mobility of ∼0.833 cm2/V·s, indicating a high switching efficiency. The results demonstrate optimized maskless lithography's potential for swift and cost-effective fabrication, offering intermediate-resolution patterning capabilities.

Vortex Domain Wall Thermal Pinning and Depinning in a Constricted Magnetic Nanowire for Storage Memory Nanodevices.

In this study, we investigate the thermal pinning and depinning behaviors of vortex domain walls (VDWs) in constricted magnetic nanowires, with a focus on potential applications in storage memory nanodevices. Using micromagnetic simulations and spin transfer torque, we examine the impacts of device temperature on VDW transformation into a transverse domain wall (TDW), mobility, and thermal strength pinning at the constricted area. We explore how thermal fluctuations influence the stability and mobility of domain walls within stepped nanowires. The thermal structural stability of VDWs and their pinning were investigated considering the effects of the stepped area depth (d) and its length (λ). Our findings indicate that the thermal stability of VDWs in magnetic stepped nanowires increases with decreasing the depth of the stepped area (d) and increasing nanowire thickness (th). For th ≥ 50 nm, the stability is maintained at temperatures ≥ 1200 K. In the stepped area, VDW thermal pinning strength increases with increasing d and decreasing λ. For values of d ≥ 100 nm, VDWs depin from the stepped area at temperatures ≥ 1000 K. Our results reveal that thermal effects significantly influence the pinning strength at constricted sites, impacting the overall performance and reliability of magnetic memory devices. These insights are crucial for optimizing the design and functionality of next-generation nanodevices. The stepped design offers numerous advantages, including simple fabrication using a single electron beam lithography exposure step on the resist. Additionally, adjusting λ and d allows for precise control over the pinning strength by modifying the dimensions of the stepped areas.

Pollen-based natural nanostructures to realize nanoplasmonic biochips for single-molecule detection

In this work, a paradigm change in the development of the plasmonic-based bio/chemical sensing approaches is presented. The proposed idea is to use natural nanostructures instead of those fabricated by electron-beam lithography (EBL) tools. This sensing approach produces several advantages, such as high performances without an optimization step and a simple, low-cost, and eco-friendly production process with respect to other methods, which are still time-consuming with low scalability. In particular, pollen's nanostructures covered by gold nanofilms are used to realize gold nanogratings (GNG), similar to those made via EBL, to excite hybrid plasmonic phenomena. Bulk and binding sensitivities are evaluated and compared to nanoplasmonic sensors, particularly those achieved via an EBL-based chip. As proof of principle, an estrogen receptor (ERα) is immobilized on the plasmonic nanostructured surfaces of both EBL-based and pollen-based chips and interrogated by the same custom 3D-printed holder through a transmission-based experimental setup, exploiting polymer optical fibers (POFs). The experimental results demonstrate that the proposed pollen-based nanoplasmonic biosensor shows performance very similar to an EBL-based nanoplasmonic biosensor, indicating the equivalence between the two nanoplasmonic biosensors. The biosensor exhibited a detection limit better than 1 aM for the estradiol, demonstrating the capabilities of the proposed sensing approach towards single-molecule detection.

Influence of Chemical Structures on E-Beam Lithography Performance of Polysilsesquioxanes.

Hydrogenated silsesquioxane (HSQ) is a key inorganic electron beam resist, celebrated for its sub-10 nm resolution and etching resistance, but it faces challenges with stability and sensitivity. Our innovative study has comprehensively assessed the lithographic performance of three functionalized polysilsesquioxane (PSQ) resist series─olefins, halogenated alkanes, and alkanes─under electron beam lithography (EBL). We discovered that the addition of olefin groups, such as in the HMP-30 formulation with 30% propyl acrylate, remarkably increased the sensitivity to 0.6 μC/cm2. The inclusion of halogenated aromatic and hydrogen-substituted methyl groups further enhanced sensitivity and contrast, with HClBN-50 achieving a 22.9 nm resolution pattern. At the same time, the storage of PSQ resists was significantly improved compared to commercial HSQ with increasing alkane group content. Crucially, our research has unveiled the lithography reaction mechanism, highlighting how group encapsulation and steric hindrance influence PSQ performance. This insight is groundbreaking, offering a deeper understanding of the molecular structure-performance relationship and laying the groundwork for developing next-generation electron beam resists with superior sensitivity, resolution, and contrast for microelectronics manufacturing.

Design of an Integrated Method for Optimizing Electron Beam Lithography Using Genetic Algorithms, Particle Swarm Optimization, and Grey Wolf Optimizer

With the ever-increasing demands of advanced manufacturing for precise micro-and nanoscale patterning, optimization of the EBL process is in urgent need. The current optimization methods involve combinations such as GA with GWO or PSO with GWO, which are plagued by poor exploration-exploitation trade-offs and hence converge to suboptimal solutions or insufficient refinement of the solution. The above challenges are overcome by an innovative Adaptive Wolf-Driven Swarm Evolution approach, synergizing the strengths of GA, PSO, and GWO for the optimization process of EBL. The generation of a diversified population of solutions from GA is the starting of AWDSE ensuring wide explorations in the search space. Further, a role-based classification using GWO classifies solutions hierarchically into different roles: Alpha, Beta, Gamma, Delta. Solutions at higher ranks (Alpha, Beta) are then refined by PSO-based updates that exploit the search space by updating the solutions, while the solutions ranked lower (Gamma, Delta) are subjected to GA-driven crossover and mutation operations to maintain diversity and exploration. The adaptive switching between the evolutionary operations of GA and particle updates of PSO may definitely be driven by the leadership dynamics of GWO, which allows more intensive balancing of diversification-intensification, thus allowing improved convergence precision and velocity. Experimental results prove that AWDSE is able to obtain an improvement of about 18% reduction of critical dimensions with a shrinkage in delay time amounting to 12%, outperforming traditional approaches like GA-GWO and PSO-GWO. This advance underlines the possibility of AWDSE to significantly enhance EBL efficiency and accuracy, with vistas toward ever finer and faster ways of nanomanufacturing process.

Imaging of Volatile Organic Compounds Using a Single Nanowire-Based Electronic Nose for Future Biomedical Applications.

This study introduces an array of semiconductor oxide single nanowires fabricated using advanced semiconductor processing techniques, including electron beam lithography and thin-film deposition, which is well-suited for large-scale nanowire integration. A four-channel nanowire array consisting of tin oxide (SnO2), indium oxide (In2O3), ferric oxide (Fe3O4), and titanium oxide (TiO2) was developed. As a proof of concept, we converted the response curves of the sensor array to heat maps, enabling comprehensive feature representation. The fabricated electronic nose (E-nose) was utilized to detect three types of volatile organic compounds (VOCs), with the results visualized in a heat map format. Additionally, the performance of each individual sensor was quantitatively studied, highlighting the array's potential for enhanced gas detection and analysis. To further illustrate the interaction between gas molecules and the nanowires, we visualized the gas response results by mapping the sensor's signal changes. These visualizations provide a clear representation of how different gas molecules interact with specific nanowires. For example, the heat maps reveal distinct response patterns for each type of VOC, allowing for the identification and differentiation of gases based on their unique signatures. This visualization technique not only enhances the understanding of gas-nanowire interactions but also demonstrates the effectiveness of the E-nose in distinguishing between various VOCs. The SnO2 nanowire gas sensor showed enhanced gas response compared to other materials. The SnO2 and TiO2 gas sensors showed enhanced response (62 and 56 s) and recovery times (100 and 37 s).

High density nanofluidic channels by self-sealing for metallic nanoparticles detection

High density nanofluidic channels were successfully fabricated by a novel process, nicknamed as self-sealing process, for the detection of metal nanoparticles dispersed in water using color changes excited by polarized electromagnetic waves. The permittivities of aqueous solutions with various concentrations of metal nanoparticles were calculated by a corrected plasma model. Systematic simulations using finite difference time domain method were carried out in investigating the detection capabilities of the nanofluidic channels for silver, beryllium and copper nanoparticles in water. The pronounced color shifts indicates that the channels possess high sensitivity in the metal nanoparticles detection. The designed nanofluidic channels were then fabricated by a direct flood deposition of a silica film on a pre-replicated hydrogen silsesquioxan (HSQ) grating using electron beam lithography (EBL). The self-sealing technique possesses advantages in simplified processing, encapsulation free and potential of multi-layer nanochannels.

Research on preparation of micron-scale orthogonally aligned HMS patterns based on soft lithography

The soft lithography enables the fabrication of microfluidic honeycombs, which are micron-scale, orthogonally aligned hexagonal mesoporous silica (HMS) patterns with channels embedded within them, on silicon substrates. The process entails meticulous cleaning, precise master mold design (including features for channel alignment) using electron-beam lithography, generation of polydimethylsiloxane (PDMS) mold creation, ink formulation, and pattern transfer. Subsequent steps include the sol-gel transition, hardening, alignment verification, characterization, and optional functionalization. It is of the utmost importance to optimize these steps and the master design in order to achieve success. Therefore, the paper examines the creation of micron-scale HMS patterns with orthogonal alignment through the innovative application of soft lithography. The technique encompasses the strategic design of hexagonal motifs, precision master mold crafting, the PDMS stamps, and a meticulous sol-gel procedure, resulting in HMS structures that exhibit remarkable precision and adaptability. This paper underscores the transformative potential of soft lithography in the realm of advanced materials, which offers a controlled and uniform approach to size and uniformity. The refined soft lithography process not only achieves the precise orthogonal alignment of HMS patterns but also highlights its adaptability and economic viability in nanotechnology ventures.

Fabrication of Circular Defects in 2-Dimensional Photonic Crystal Lasers with Convex Edge Structure

We have developed circular defects in 2-dimensional photonic crystal lasers that allow current injection for interconnected optical communications. However, when cleaving the sample to measure the output light, the output light intensity changes due to the cleaving position. In a previous study, we proposed a new end face structure called a convex edge structure. In this paper, we design the electron beam lithography patterns to fabricate this structure. With this design, it is possible to eliminate the effect of different cleaving positions and ensure that the cleavage tolerance is larger than the cleavage position error. We also develop the fabrication technology for this structure, fabricate samples, and measure the output light experimentally. The optical properties of the fabricated sample are similar to well-fabricated samples with normal cleavage edge faces. We are assured that these results contribute to future work such as accurate manufacturing and improving the end face configuration to obtain higher outputs.

Repair Engineering of Crystal Structure in van der Waals Materials by Probe Electron Beam.

The advancement of electronic technology has led to increasing research on performance and stability. Continuous electrical pulse stimulation can cause crystal structure changes, affecting performance and accelerating aging. Controlled repair of these defects is crucial. In this study, we investigated crystal structure changes in van der Waals (vdW) InSe crystals under continuous electric pulses by using electron beam lithography (EBL) and spherical aberration corrected transmission electron microscopy (Cs-TEM). Results show that electrical pulses induce amorphous regions in the InSe lattice, increasing the device resistance. We used Cs-STEM probe scanning for precise repair, abbreviated SPRT, to optimize device performance. SPRT is related to electric fields induced by the electron beam and can be applied to other 2D materials like α-In2Se3 and CrSe2, offering a potential approach to extend device lifespan.

Dry etch performance of Novolak-based negative e-beam resist

Electron beam lithography (EBL) is pivotal for micro- and nanoscale fabrication, offering sub-micron precision. This study explores the utilization of the Novolac-based negative resist AR-N 7520 for EBL and its potential as an etch mask for reactive ion etching (RIE) of silicon. Recent comparisons of negative EBL resists have revealed promising results for AR-N 7520 in terms of resolution and adaptability with other lithography techniques. In this article, we conduct an exploration of patterning of AR-N 7520 (new) for EBL, addressing key parameters in achieving optimal patterning fidelity. Furthermore, we investigate its compatibility with RIE processes, aiming to provide insights into its effectiveness as an etch mask for creating sub-micron silicon structures. Experimental results show that optimal e-beam dose with 100 kV exposure is 300–350 μC/cm2. Selectivity of around 9:1 can be achieved by optimizing etching parameters for a continuous etch and higher than 14:1 for a cyclic etch process.

Wafer-scale nanofabrication of sub-5 nm gaps in plasmonic metasurfaces

Abstract In the rapidly evolving field of plasmonic metasurfaces, achieving homogeneous, reliable, and reproducible fabrication of sub-5 nm dielectric nanogaps is a significant challenge. This article presents an advanced fabrication technology that addresses this issue, capable of realizing uniform and reliable vertical nanogap metasurfaces on a whole wafer of 100 mm diameter. By leveraging fast patterning techniques, such as variable-shaped and character projection electron beam lithography (EBL), along with atomic layer deposition (ALD) for defining a few nanometer gaps with sub-nanometer precision, we have developed a flexible nanofabrication technology to achieve gaps as narrow as 2 nm in plasmonic nanoantennas. The quality of our structures is experimentally demonstrated by the observation of resonant localized and collective modes corresponding to the lattice, with Q-factors reaching up to 165. Our technological process opens up new and exciting opportunities to fabricate macroscopic devices harnessing the strong enhancement of light–matter interaction at the single nanometer scale.