Electron Beam Lithography Research Articles

DNA Origami‐Directed Self‐Assembly of Gold Nanospheres for Plasmonic Metasurfaces

AbstractPlasmonic nanostructures are frequently utilized to create metasurfaces with a large variety of optical effects. Control over shape and positioning of the nanostructures is key to the function of such plasmonic metasurfaces. Next to lithographic means, directed self‐assembly is a viable route to create plasmonic structures on surfaces with the necessary precision. Here, a combined approach of DNA origami self‐assembly and electron beam lithography is presented for determinate positioning of gold nanospheres on a SiO2 surface. First, DNA origami structures bind to the electron beam‐patterned substrate and subsequently, gold nanoparticles attach to a defined binding site on the DNA origami structure via DNA hybridization. A sol‐gel reaction is then used to grow a silica layer around the DNA, thereby increasing the stability of the self‐assembled metasurface. A mean yield of 74% of single gold nanospheres is achieved located at the determinate positions with a spatial position accuracy of 9 nm. Gold nanosphere dimers and trimers are achieved with a rate of 65% and 60%, respectively. The applicability of this structuring method is demonstrated by the fabrication of metasurfaces whose optical response can be tuned by the polarization of the incoming and the scattered light.

Design and analysis of SRR based metamaterial loaded circular patch multiband antenna for satellite applications

Satellite communication has reached a turning point in transmitting data quickly and receiving signals clearly in faraway places. This paper presents a metamaterial-based antenna for distant and military applications that overcomes restrictions and performs unmatched. This project explores metamaterials to create a unique antenna. Expect to be astounded by its power to bend electromagnetic waves, miniaturize, and change our relationship with the universe. The feeding mechanism of this antenna is a modified co-planar waveguide. At 5.6 GHz, the proposed antenna unit cell measures 0.076λ0×0.2λ0, making it small thanks to its MTM characteristic. CP radiation is made when two orthogonally polarized modes are stimulated at the same time and two composite right- and left-handed transmission line unit cells are placed orthogonally. Reduced size, increased bandwidth, and improved Learn how this discovery opens new doors for high-resolution photography, broadband internet, and space exploration. One nanostructure that makes up a metamaterial is the Split Ring Resonator (SRR). SRR dimensions must be smaller than the resonance wavelength, making them crucial for near-infrared and optical responses. This effort examined nanoscale SRR characteristics in the infrared and visible ranges. SRRs composed of aluminum (Al) and gold (Au) were produced on silicon and silica substrates using electron beam lithography (EBL). The proposed structure consists of a microstrip-line-supplied SRR, a parasitic patch that is perpendicular to the ground plane, and two via holes connected by two split rings that feed the patch indirectly. Choosing the right material parameter for all such antennas depends on the planned structure. Fabrication and testing of the antenna matched simulations. Dimensions: 23.7 mm × 16.2 mm × 1.6 mm; substrate dielectric constant: 4.4. Experimental data are detailed and compared to analytical calculations. Simulation results show that metamaterials have negative permittivity and permeability in a certain frequency range, which can be predicted by an analytical method. Simulations indicated eight BRS, WiMAX, radar, and mobile phone resonance frequencies. Radiation is dipole-like in the omnidirectional in the H-plane and E-plane. 10 dB return loss and 3 dB axial ratio bandwidths are 38.6.7% and 8.1%, respectively.

Nanofabrication, characterisation and modelling of soft-in-hard FeCo-FePt magnetic nanocomposites

Advanced nanofabrication exploiting e-beam lithography has been used to prepare nanocomposites consisting of periodic arrays of soft magnetic FeCo-based nano-inclusions of variable dimensions, embedded in a hard magnetic FePt matrix. Nanocomposites with non-magnetic (Pt) inclusions and single phase hard magnetic FePt microstructures were prepared as reference samples. The formation of Kirkendall voids in the soft-in-hard nanocomposites, because of annealing-induced diffusion, has been identified through high resolution imaging and chemical analysis. Replication of the μm-scaled nanocomposite and hard magnetic units over mm-scaled surfaces allowed global magnetic characterisation of magnetisation reversal using standard magnetometry. Magnetic force microscopy imaging was used for spatially resolved magnetic characterisation in different remanent magnetic states. Both of these experimental techniques were used to study the influence of the size, volume content and nature of the nano-inclusions on magnetisation reversal. The well-defined geometry and nano-scaled size of the inclusions render these nanocomposites as model systems for micromagnetic simulations and very good agreement was achieved between measured and simulated magnetisation reversal curves. This accordance motivates future in-silico optimization of such soft-in-hard nanocomposites, which may serve as model systems to guide the design of new high performance bulk magnets which are less dependent on critical elements.

Optimizing Josephson Junction Reproducibility in 30 kV E-Beam Lithography: An Analysis of Backscattered Electron Distribution.

This paper explores methods to enhance the reproducibility of Josephson junctions, which are crucial elements in superconducting quantum technologies, when employing the Dolan technique in 30 kV e-beam processes. The study explores the influence of dose distribution along the bridge area on reproducibility, addressing challenges related to fabrication sensitivity. Experimental methods include e-beam lithography, with electron trajectory simulations shedding light on the behavior of backscattered electrons. Wedescribe the fabrication of various Josephson junction geometries and analyze the correlation between the success rates of different lithography patterns and the simulated distribution of backscattered electrons. Our findings demonstrate a success rate of up to 96.3% for the double-resist 1-step low-energy e-beam lithography process. As a means of implementation strategy, we provide a geometric example that takes advantage of simulated stability regions to administer a controlled, uniform dose across the junction area, introducing novel features to overcome the difficulties associated with fabricating bridge-like structures.

A novel non-chemically amplified resist based on polystyrene-iodonium derivatives for electron beam lithography

To break the resolution limitation of traditional resists, more work is needed on non-chemically amplified resists (non-CARs). Non-CARs based on iodonium salt modified polystyrene (PS-I) were prepared with controllable molecular weight and structure. The properties of the resist can be adjusted by the uploading of iodonium salts on the polymer chain, the materials with a higher proportion of iodonium salts show better lithography performance. By comparing contrast curves and quality of the lithographic patterns, the optimum developing condition of 4-methyl-2-pentanone and ethyl alcohol (v:v = 1:7) was selected. The high-resolution stripes of 15 nm half-pitch (HP) can be achieved by PS-I0.58 in e-beam lithography (EBL). PS-I0.58 shows the advanced lithography performance in the patterns of 16 nm HP and 18 nm HP stripes with low line edge roughness (3.0 nm and 2.4 nm). The resist shows excellent potential for further pattern transfer, the etch selectivity of resist PS-I0.58 to the silicon was close to 12:1. The lithographic mechanism of PS-I was investigated by experimental and theoretical calculation, which indicates the polarity of materials changes results in the solubility switch. This work provides a new option and useful guidelines for the development of high-resolution resist.

Self-aligned, inkjet-printed resistors on flexible substrates with excellent mechanical stability, high yield, and low variance

Resistors are basic yet essential circuit components that must be fabricated with high precision at low cost if they are to be viable for flexible electronic applications. Inkjet printing is one of many additive fabrication techniques utilized to realize this goal. In this work, a process termed self-aligned capillarity-assisted lithography for electronics (SCALE) was used to fabricate inkjet-printed resistors on flexible substrates. Capillary channels and reservoirs imprinted onto flexible substrates enabled precise control of resistor geometry and straightforward alignment of materials. More than 300 devices were fabricated using poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) as the resistive material and silver as the electrode material. By varying PEDOT:PSS ink formulation and resistor geometry, resistances spanning from 170 Ω to 3.8 MΩ were achieved. Over 98% of devices were functional and the relative standard deviation in resistance ranged from 3% to 18% depending on resistor length and ink composition. The resistors showed no significant change in resistance after 10 000 cycles of bend testing at 1.6% surface tensile strain. In summary, this work demonstrated a fully roll-to-roll compatible process for inkjet printing resistors with superior properties.

Effect of thermal annealing on the surface plasmon properties of gold and silver nanodisk structures fabricated by electron beam lithography

This study investigates the effect of thermal annealing on the surface plasmon resonance properties of gold and silver nanodisk structures fabricated by electron beam lithography. Despite no significant size change due to a nickel adhesion layer, thermal annealing at 500 °C notably altered surface plasmon resonance properties, especially in gold nanodisks, which showed peak blue-shifts and narrowing, indicating improved crystallinity. We fitted the peak shift by using an electromagnetic field analysis and discussed the changes in the dielectric function. The dielectric function of the simple Drude model was adopted, which was fitted to the values of the Lorentz Drude model in a limited wavelength region. While both silver and gold exhibited increased oscillation strength, only gold nanodisk structures showed a decrease in damping frequency. Increased oscillation strength indicated that these structures should be useful for selective enhancement of the light at specific wavelengths by a very simple heat treatment.

Controlling Nanoparticle Distance by On-Surface DNA-Origami Folding.

DNA origami is a flexible platform for the precise organization of nano-objects, enabling numerous applications from biomedicine to nano-photonics. Its huge potential stems from its high flexibility that allows customized structures to meet specific requirements. The ability to generate diverse final structures from a common base by folding significantly enhances design variety and is regularly occurring in liquid. This study describes a novel approach that combines top-down lithography with bottom-up DNA origami techniques to control folding of the DNA origami with the adsorption on pre-patterned surfaces. Using this approach, tunable plasmonic dimer nano-arrays are fabricated on a silicon surface. This involves employing electron beam lithography to create adsorption sites on the surface and utilizing self-organized adsorption of DNA origami functionalized with two gold nanoparticles (AuNPs). The desired folding of the DNA origami helices can be controlled by the size and shape of the adsorption sites. This approach can for example be used to tune the center-to-center distance of the AuNPs dimers on the origami template. To demonstrate this technique's efficiency, the Raman signal of dye molecules (carboxy tetramethylrhodamine, TAMRA) coated on the AuNPs surface are investigated. These findings highlight the potential of tunable DNA origami-based plasmonic nanostructures for many applications.

Machine Learning Applied to Electron Beam Lithography to Accelerate Process Optimization of a Contact Hole Layer.

Determining the lithographic process conditions with high-resolution patterning plays a crucial role in accelerating chip manufacturing. However, lithography imaging is an extremely complex nonlinear system, and obtaining suitable process conditions requires extensive experimental attempts. This severely creates a bottleneck in optimizing and controlling the lithographic process conditions. Herein, we report a process optimization solution for a contact layer of metal oxide nanoparticle photoresists by combining electron beam lithography (EBL) experiments with machine learning. In this solution, a long short-term memory (LSTM) network and a support vector machine (SVM) model are used to establish the contact hole imaging and process condition classification models, respectively. By combining SVM with the LSTM network, the process conditions that simultaneously satisfy the requirements of the contact hole width and local critical dimension uniformity tolerance can be screened. The verification results demonstrate that the horizontal and vertical contact widths predicted by the LSTM network are highly consistent with the EBL experimental results, and the classification model shows good accuracy, providing a reference for process optimization of a contact layer.

On the reproducibility of electron-beam lithographic fabrication of photonic nanostructures.

Photonic nanostructures such as gratings and ring resonators have become ubiquitous building blocks in Photonics. For example, they are used in filters, they resonantly enhance signals and act as grating couplers. Much research effort is invested in using such structures to create novel functionalities, which often employs electron-beam lithography. An intrinsic issue in this field is the ability to accurately achieve a specific operating wavelength, especially for resonant systems, because nanometer-scale variations in feature size may easily detune the device. Here, we examine some of the key fabrication steps and show how to improve the reproducibility of fabricating wavelength scale photonic nanostructures. We use guided mode resonance grating sensors as our exemplar and find that the exposure condition and the development process significantly affect the consistency of the resonance wavelength, amplitude, and sensitivity of the sensor. By having careful control over these factors, we can achieve consistent performance for all the sensors studied, with less than 10% variation in their resonance behaviors. These investigations provide useful guidelines for fabricating nanostructures more reliably and to achieve a higher success rate in exploratory experiments.

Near‐Infrared Light Trapping and Avalanche Multiplication in Silicon Epitaxial Microcrystals

AbstractThe chemical vapor deposition of silicon on a patterned silicon substrate leads to the formation of 3D microcrystals, which, due to their inclined top facets and high aspect ratio, produce a light‐trapping effect enhancing the optical absorption in the near‐infrared (NIR). In this work, it is demonstrated that Si microcrystals can form the building blocks of a new class of NIR sensitive photodetectors operating in a linear or avalanche regime. Microcrystal‐based devices are designed by coupling a 2D kinetic‐growth model with a Poisson drift‐diffusion solver and fabricated by combining electron beam lithography and low‐energy plasma‐enhanced chemical vapor deposition (LEPECVD). The optoelectronic properties of microcrystal‐based p–i–n photodiodes are investigated both theoretically and experimentally by means of finite‐difference time‐domain (FDTD) simulations and responsivity measurements. At 1000 nm wavelength, the responsivity of microcrystal‐based devices is six times higher than that of an equivalent mesa diode. Moreover, the photocurrent gains of Si microcrystals operating as an avalanche photodiode (APD), at the same wavelength, reaches 2 × 104 demonstrating the potentialities of substrate patterning, combined with epitaxial growth, for amplified photodetection applications.

High on-chip gain spiral Al2O3:Er3+ waveguide amplifiers

We demonstrate reactively sputtered Al2O3:Er3+ waveguide amplifiers with an erbium concentration of 3.9 × 1020 ions/cm3, capable of achieving over 30 dB small signal net gain at 1532 nm using bidirectional pumping at 1480 nm. We observe on chip output powers of 10.2-13.6 dBm of amplified signal power at 1532 nm for a 12.9 cm waveguide amplifier considering -25.4 dB of lumped coupling losses per facet. Annealing was used to improve the performance of the devices, which were patterned using electron beam lithography and reactive ion etching. This result, to our knowledge, represents record breaking on-chip internal net gain for Al2O3:Er3+ waveguide amplifiers, which show promise over other technologies due to wafer scalability and promise of easy monolithic integration with other material platforms to support a wide variety of applications.

Nanoscale precision brings experimental metalens efficiencies on par with theoretical promises

Metalenses are flat lenses, where sub-wavelength, so-called meta-atoms manipulate the electric field to perform a given lens function. Compared to traditional lenses, the two main drawbacks of metalenses are their achromatic limitations and low efficiencies. While an abundance of simulations show that efficiencies above 90% are attainable for low numerical apertures (NA), experimental reports showing such high efficiencies are limited. Here, we use electron-beam lithography (EBL) to realize a set of lenses with varying NA from 0.08 to 0.93. The low NAs were expected to fit the model, and the higher NAs determine the validity range of the model. We find that measured efficiencies above 92% for NA = 0.24 are achievable, and that a slight modification of the simulation model extends its validility to NA = 0.6. Based on our results, we discuss that the lower efficiencies reported in the literature are caused by low-fidelity manufacturing, closing the efficiency gap between measurements and simulation in metalens fabrication.

Solvent-free microfabrication of thin film device using the focused ion beam

We introduce a novel fabrication technique for thin film devices, utilizing Focused Ion Beam micro-machining. Unlike conventional methods requiring post processes such as etching or solvent treatment, this method involves creating a pre-patterning step-like structure on the substrate before growing the thin film, achieving the desired device pattern right after thin film deposition. As an example, we fabricated devices with VO2 thin film of which electrical transport properties are examined. The VO2 devices exhibit robust metal-insulator transition behavior and V-I characteristics, indicating the high quality of the patterned devices. The results indicate that our approach enables intricate patterning, comparable to conventional e-beam lithography, without the risk of sample degradation. The simplicity, stability, and versatility of this technique suggest new possibilities for thin film device fabrication.

Crosslinking-induced patterning of MOFs by direct photo- and electron-beam lithography

Metal-organic frameworks (MOFs) with diverse chemistry, structures, and properties have emerged as appealing materials for miniaturized solid-state devices. The incorporation of MOF films in these devices, such as the integrated microelectronics and nanophotonics, requires robust patterning methods. However, existing MOF patterning methods suffer from some combinations of limited material adaptability, compromised patterning resolution and scalability, and degraded properties. Here we report a universal, crosslinking-induced patterning approach for various MOFs, termed as CLIP-MOF. Via resist-free, direct photo- and electron-beam (e-beam) lithography, the ligand crosslinking chemistry leads to drastically reduced solubility of colloidal MOFs, permitting selective removal of unexposed MOF films with developer solvents. This enables scalable, micro-/nanoscale (≈70 nm resolution), and multimaterial patterning of MOFs on large-area, rigid or flexible substrates. Patterned MOF films preserve their crystallinity, porosity, and other properties tailored for targeted applications, such as diffractive gas sensors and electrochromic pixels. The combined features of CLIP-MOF create more possibilities in the system-level integration of MOFs in various electronic, photonic, and biomedical devices.

7.4 nm linewidth Pt nanowires by electron-beam lithography using non-chemically amplified positive-tone resist and post-exposure bake

Abstract 7.4 nm linewidth Pt nanowires were demonstrated on SiO2/Si substrates via electron-beam lithography using a non-chemically amplified positive resist ZEP520A and post-exposure bake (PEB) treatment. The effect of the PEB treatment conditions on the nanowires’ characteristics was investigated. As the PEB temperature and time increased, a decrease in the mean linewidth and an improvement of the line-width (line-edge) roughness of the nanowires were observed. Pt nanowires with an ultrafine linewidth of 7.4 nm were successfully fabricated using the optimal condition of 100 °C for 2 min, verifying the effectiveness of PEB for fabricating sub-10 nm linewidth robust metal nanowires.

Design and demonstration of high efficiency perfectly vertical grating couplers with a random structure.

Utilizing an automated optimization method, we propose a perfectly vertical grating coupler (PVGC) characterized by random structure, superior performance, simplified fabrication process, and increased minimum feature size (MFS). Within the range of MFS from 60 to 180 nm, the optimized PVGC exhibited a simulated coupling efficiency of approximately -2.0 dB at 1550 nm with a 34 nm 1-dB bandwidth. Experimental results for the PVGCs fabricated by electron beam lithography (EBL) demonstrated coupling efficiencies ranging from -2.5 to -2.8 dB with a 32 nm 1-dB bandwidth while maintaining high manufacturing tolerances. This represents the most outstanding experimental outcome to date regarding the coupling performance of a PVGC fabricated on a 220 nm silicon on insulator (SOI), without requiring any complex processes as reported in the existing literature.

A study on the resist performance of inorganic-organic resist materials for EUV and electron-beam lithography

In the realization of further miniaturization at scales of 10 nm and below in semiconductor devices, it is essential to create new resist designs, such as hybrid inorganic-organic resist materials for ionizing radiation, in order to clarify the effect the structure of metal resist on resist performance. In this study, some hybrid inorganic-organic resist materials known as metal-oxo clusters were synthesized, and their lithographic characteristics were investigated to clarify the relationship between resist performance, such as sensitivity, resolution, and their absorption coefficient or cross section, and the density of their elements by using EUV and electron-beam (EB) exposure. Our results indicated that the sensitivity in Hf-based oxo clusters was higher than that of Ti-based and Zr-based oxo clusters in both EB and EUV exposure. Although the exposure dose was not optimized, the patterns of Ti-based, Zr-based, and Hf-based oxo clusters showed 100, 50, and 32 nm line-and-space patterns at doses of 250, 80, and 25 μC cm−2, respectively. We clarified that it is very important for new resist designs such as hybrid inorganic-organic resists to increase the photo-absorption cross section and density of elements for EUV and EB without degradation of film quality. In addition, the size and homogeneity of the building blocks and film quality are very important for the resist performance of hybrid inorganic-organic resist materials. Furthermore, it is clarified that the etch durability of metal-oxo clusters is higher than conventional resist materials, and this is much increased by annealing them at 800 °C.

Improving soft X-ray imaging contrast uniformity of 50nm Au zone plate by optimizing pulse plating

The Fresnel zone plate plays a pivotal role in X-ray imaging systems, directly influencing the uniformity of imaging contrast. Achieving uniform imaging contrast imposes stringent requirements on the linewidth and height uniformity of the zone plate. The current mainstream method for zone plate fabrication involves utilizing electron beam lithography in conjunction with electroplating. However, in structures with large aspect ratios, precise deposition of gold to the bottom of the trench through electroplating becomes increasingly challenging to control. In this study, we employed a pulse plating process to enhance the uniformity of the plating height. Detailed investigations were conducted to analyze the effects of pulse current density, pulse duty cycle, and pulse frequency on plating height. Utilizing pulse plating, we successfully fabricated a zone plate with an outermost width of 50 nm and a thickness of approximately 245 nm. Structural analysis showed that the plating height uniformity is improved to better than 5%. The high uniformity imaging pattern was obtained by using the Siemens star test pattern at the soft x-ray imaging station at NSRL. The spatial resolution was down to 50 nm.

Multiple fano resonances based on all-dielectric metastructure for refractive index sensing

We investigate an optical refractive index sensor based on an all-dielectric metastructure in the near-infrared regime for achieving high sensitivity and high quality factor (Q-factor). By introducing the asymmetry in the metastructure, four sharp Fano resonances with high Q-factor are generated owing to the transition from symmetry-protected bound states in the continuum (BIC) to quasi-BIC, and the magnetic quadrupole (MQ) resonance, magnetic dipole (MD) resonance, and toroidal dipole (TD) resonance are analyzed by a combination of the field distributions. By evaluating the sensing performance with finite difference time domain (FDTD), the highest Q-factor can reach 6900, the modulation depth is close to 100 %, the sensitivity can reach 288 nm/RIU, and the figure of merit (FOM) is 888 RIU−1. Furthermore, the sensor is prepared using electron beam lithography (EBL), and inductively coupled plasma reactive ion etch (ICP-RIE), and high sensitivity is achieved in liquids with different refractive indices in the near-infrared. The results show a good sensing performance of the designed metastructure. Our findings will give access to the development of applications in non-linear devices, narrow-band filters, optical switches, and quantum nanophotonics.