A study on the resist performance of inorganic-organic resist materials for EUV and electron-beam lithography

Abstract

In the realization of further miniaturization at scales of 10 nm and below in semiconductor devices, it is essential to create new resist designs, such as hybrid inorganic-organic resist materials for ionizing radiation, in order to clarify the effect the structure of metal resist on resist performance. In this study, some hybrid inorganic-organic resist materials known as metal-oxo clusters were synthesized, and their lithographic characteristics were investigated to clarify the relationship between resist performance, such as sensitivity, resolution, and their absorption coefficient or cross section, and the density of their elements by using EUV and electron-beam (EB) exposure. Our results indicated that the sensitivity in Hf-based oxo clusters was higher than that of Ti-based and Zr-based oxo clusters in both EB and EUV exposure. Although the exposure dose was not optimized, the patterns of Ti-based, Zr-based, and Hf-based oxo clusters showed 100, 50, and 32 nm line-and-space patterns at doses of 250, 80, and 25 μC cm−2, respectively. We clarified that it is very important for new resist designs such as hybrid inorganic-organic resists to increase the photo-absorption cross section and density of elements for EUV and EB without degradation of film quality. In addition, the size and homogeneity of the building blocks and film quality are very important for the resist performance of hybrid inorganic-organic resist materials. Furthermore, it is clarified that the etch durability of metal-oxo clusters is higher than conventional resist materials, and this is much increased by annealing them at 800 °C.