Abstract
We developed and evaluated a photoacid generator (PAG)-bonded resist, a chemical amplified (CA) resist for decreasing line edge roughness (LER) and increasing sensitivity in extreme ultraviolet lithography (EUVL) and electron beam (EB) lithography. We investigated many samples to find an effective for the PAG-bonded resist. Under EB exposure, the LERs and resolutions of the PAG-bonded resist and PAG-blended resist which uses the same PAG and base polymer were compared. It was confirmed that the LER and resolution of the PAG-bonded resist are better than those of the PAG-blended resist. An LER of 3.5 nm in 75 nm line-and-space (L/S) and a resolution of 25 nm space were achieved. Under EUV exposure, a sensitivity of 5.0 mJ/cm2 was achieved.
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