Electron Beam-generated Plasma Research Articles

Measurement and reduction of Ar metastable densities by nitrogen admixing in electron beam-generated plasmas

Electron beam (e-beam) generated plasmas are useful for material processing applications such as deposition and etching because the plasmas deliver a large fluence of very low energy of ions to surfaces. Metastable species produced in the beam-region can also transport significant energy to the plasma periphery and surfaces. In this work, we have investigated the spatially resolved density of metastable Ar 1s5 species produced in an Ar and Ar/N2 e-beam generated plasma at pressures of 60–67 mTorr using laser-induced fluorescence (LIF). The experiments provide the first direct measure of absolute density and reduction of Ar 1s5 in an e-beam generated plasma when argon is diluted with nitrogen. These results are consistent with previous predictions of numerical modeling and measurements using optical emission spectroscopy. The present spatially resolved LIF measurements directly quantify the reduction of Ar 1s5 in the e-beam generated plasma by nitrogen admixing. This reduction was observed in the region of the electron beam and in the plasma periphery, where substrates are usually placed. For example, up to a threefold reduction of the density of Ar 1s5 was measured when the argon background was diluted with 15.5% nitrogen at pressure of 60 mTorr. Ar 1s5 reduction is attributed to excitation exchange with nitrogen molecules as well as the cooling of plasma electrons via inelastic collisions with nitrogen molecules.

Characterization of transversely confined electron beam-generated plasma using two-dimensional particle-in-cell simulations

Electron beam-generated plasmas (EBPs) have been used to modify the surface properties. In certain applications, EBPs are transversely confined and their properties are of value to the treatment. In this paper, the characteristics of an electron beam-generated argon plasma, confined within a narrow gap, are investigated using a two-dimensional particle-in-cell simulation. The employed particle-in-cell/Monte Carlo collision model accounts for the electron and ion kinetics, as well as collisions between electrons and the background gas, including the elastic scattering, excitation, and impact ionization. Our simulations reveal a strong correlation between the plasma density and the beam density within the plasma bulk. The excitation of obliquely growing waves is observed, which is found to have a significant impact on the transport of beam electrons, thereby leading to the non-uniformities of plasma density and electron temperature. Specifically, the obliquely growing waves increase the local plasma density while reducing the electron temperature. These contrasting effects compensate for each other, and therefore, to some extent, smooth out the distributions of ion flux and energy flux. We further examine the variations of plasma parameters with respect to the beam current density, beam energy, and gas pressure. Increasing the beam current density or decreasing the beam energy results in higher plasma density and electron temperature, while increasing pressure leads to a higher plasma density but electron temperature scarcely changes. Based on the simulation results, we propose an approach to achieve independent control of the ion flux and energy flux by adjusting beam current density, beam energy, and pressure.

Beam-generated plasma formation near a dielectric target irradiated by a pulsed electron beam in the forevacuum pressure range

We have investigated the formation of electron beam-generated (EBG) plasma near a dielectric (ceramic) target and an insulated metal target, and the compensation of the negative charge accumulated on the insulated metal target when the targets are irradiated by an intense pulsed electron beam in the forevacuum pressure range (4–15 Pa). It is shown that the density of the EBG plasma near the irradiated ceramic target (or the irradiated insulated metal target) is greater than the plasma density for a beam propagating freely in a vacuum chamber (or for the grounded metal target). The EBG plasma near the target is formed with a certain delay with respect to the electron beam current pulse, because of which the negative potential of the insulated target is also compensated by a delay. The delay time in the formation of the EBG plasma and in the compensation of the target negative potential decreases with increasing gas pressure. Expressions have been proposed for estimating this delay time.

Improvement of Electron Gun Breakdown Performance Through Surface Flashover and Discharge Studies

The reliable and uninterrupted operation of electron gun for refractory metal melting application requires a systematic study of surface flashover and electron beam-generated plasma discharge (EB-GPD) characteristics. These are highly influenced by insulator and target material characteristics. However, both lead to high-voltage (HV) breakdown of electron gun due to electric field intensification, insulator failure due to its sputtering and coating by backscattered electrons as well as secondary emitted electrons from the target material. This article deals with performance optimization of 2700-bent directly heated electron gun (DHEG) for device improvement. To achieve this, systematic study and analysis of insulator and target materials have been done through: 1) detailed 3-D simulations to study surface flashover by investigating electric field intensification in electron gun and 2) detailed study of discharge characteristics to investigate backscattered and secondary emitted electrons. The 3-D electrostatic, electromagnetic, and particle tracking simulations are done by using the Computer Simulation Technology (CST) Studio Particle tracking module. Discharge properties are evaluated by using disk-type Langmuir probe (LP) measurements accompanied by detailed mathematical calculations. This work helps to address the HV breakdown issue in electron gun, which is of great practical significance.

Particle-in-cell modeling of electron beam generated plasma

Plasmas generated using energetic electron beams are well known for their low electron temperature (T e) and plasma potential, which makes them attractive for atomic-precision plasma processing applications such as atomic layer etch and deposition. A 2-dimensional particle-in-cell model for an electron beam-generated plasma in argon confined by a constant applied magnetic field is described in this article. Plasma production primarily occurs in the path of the beam electrons in the center of the chamber. The resulting plasma spreads out in the chamber through non-ambipolar diffusion with a short-circuiting effect allowing unequal electron and ion fluxes to different regions of the bounding conductive chamber walls. The cross-field transport of the electrons (and thus the steady-state characteristics of the plasma) are strongly impacted by the magnetic field. T e is anisotropic in the electron beam region, but low and isotropic away from the plasma production zone. The plasma density increases and the plasma becomes more confined near the region of production when the magnetic field strengthens. The magnetic field reduces both electron physical and energy transport perpendicular to the magnetic field. T e is uniform along the magnetic field lines and slowly decreases perpendicular to it. Electrons are less energetic in the sheath regions where the sheath electric field repels and confines the low-energy electrons from the bulk plasma. Even though electron and ion densities are similar in the bulk plasma due to quasi-neutrality, electron and ion fluxes on the grounded chamber walls are unequal at most locations. Electron confinement by the magnetic field weakens with increasing pressure, and the plasma spread out farther from the electron beam region.

Etching with electron beam-generated plasmas: Selectivity versus ion energy in silicon-based films

In the ideal case, plasma-enhanced atomic layer etching enables the ability to not only remove one monolayer of material but also leave adjacent layers undamaged. This dual mandate requires fine control over the flux of species to ensure efficacy, while maintaining an often arduously low ion energy. Electron beam-generated plasmas are well-suited for etching at low ion energies as they are generally characterized by highly charged particle densities (1010–1011 cm−3) and low electron temperatures (<1.0 eV), which provide the ability to deliver a large flux of ions whose energies are <5 eV. Raising the ion energy with substrate biasing thus enables process control over an energy range that extends down to values commensurate with the bond strength of most material systems. In this work, we discuss silicon nitride etching using pulsed, electron beam-generated plasmas produced in argon-SF6 backgrounds. We pay particular attention to the etch rates and selectivity versus oxidized silicon nitride and polycrystalline silicon as a function of ion energy from a few eV up to 50 eV. We find the blanket etch rate of Si3N4 to be in the range of 1 A/s, with selectivities (versus SiO2 and poly-Si) greater than 10:1 when ion energies are below 30 eV.

Etching with Low Te Plasmas

Processing with atomic layer precision requires the ability to not only add, remove or modify one monolayer of material but to also leave adjacent layers unchanged. This requires fine control over the flux of species and energy deposition at the surface. The appropriate threshold and process windows are certainly material specific but it is reasonable to assume many applications require low energy ions. Electron beam-generated plasmas are generally characterized by high charged particle densities (1010- 1011 cm-3), low electron temperatures (0.3 - 1.0 eV), and in reactive gas backgrounds, a relatively low radical production rate compared to discharges. The flux at the surface will thus be characterized by a comparatively large amount of ions whose energies are < 5 eV, a value commensurate with the bond strength of most materials. As such, these sources are well-suited to explore processing space not commonly found in industrial tools. In this work, we discuss SiN etching using pulsed, electron beam generated plasmas produced in SF6 backgrounds. We pay particular attention to the etch rates, selectivity (vs. carbon films, Si and SiO2), and patterning as function of operating parameters such as relative gas concentration, operating pressure, and substrate bias. These results are compared with plasma diagnostics to gain a better understanding of the process requirements and windows for threshold etching of SiN. This work is partially supported by the Naval Research Laboratory base program.

Fluorinated Graphene Enables the Growth of Inorganic Thin Films by Chemical Bath Deposition on Otherwise Inert Substrates.

Chemically modified graphenes (CMGs) offer a means to tune a wide variety of graphene's exceptional properties. Critically, CMGs can be transferred onto a variety of substrates, thereby imparting functionalities to those substrates that would not be obtainable through conventional functionalization. One such application of CMGs is enabling and controlling the subsequent growth of inorganic thin films. In the current study, we demonstrated that CMGs enhance the growth of inorganic films on inert surfaces with poor growth properties. Fluorinated graphene transferred onto polyethylene enabled the dense and homogeneous deposition of a cadmium sulfide (CdS) film grown via chemical bath deposition. We showed that the coverage of the CdS film can be controlled by the degree of fluorination from less than 20% to complete coverage of the film. The approach can also be applied to other technologically important materials such as ZnO. Finally, we demonstrated that electron beam-generated plasma in a SF6-containing background could pattern fluorine onto a graphene/PE sample to selectively grow CdS films on the fluorinated region. Therefore, CMG coatings can tailor the surface properties of polymers and control the growth of inorganic thin films on polymers for the development of flexible electronics.

Electron beam generated plasmas: Characteristics and etching of silicon nitride

The Naval Research Laboratory (NRL) has developed a processing system based on an electron beam-generated plasma, where unlike conventional discharges produced by electric fields (DC, RF, microwave, etc.), ionization is driven by a high-energy (~keV) electron beam. The resulting plasmas are characterized by large electron densities (1010–1011cm−3) and low electron temperatures (0.3–1.0eV). Accordingly, a large flux of ions can be delivered to substrate surfaces with kinetic energies of only a few eV, a feature that can be attractive to processing applications that require low damage and atomic layer precision. This work describes the salient features of these plasmas produced in mixtures of argon and sulfur hexafluoride (SF6) and their use in silicon nitride etching, with particular attention paid to developing processing parameters relevant to atomic layer processing.

Electron beam-generated Ar/N2 plasmas: The effect of nitrogen addition on the brightest argon emission lines

The effect of nitrogen addition on the emission intensities of the brightest argon lines produced in a low pressure argon/nitrogen electron beam-generated plasmas is characterized using optical emission spectroscopy. In particular, a decrease in the intensities of the 811.5 nm and 763.5 nm lines is observed, while the intensity of the 750.4 nm line remains unchanged as nitrogen is added. To explain this phenomenon, a non-equilibrium collisional-radiative model is developed and used to compute the population of argon excited states and line intensities as a function of gas composition. The results show that the addition of nitrogen to argon modifies the electron energy distribution function, reduces the electron temperature, and depopulates Ar metastables in exchange reactions with electrons and N2 molecules, all of which lead to changes in argon excited states population and thus the emission originating from the Ar 4p levels.

Modified quadrupole mass analyzer RGA-100 for beam plasma research in forevacuum pressure range.

The industrial quadrupole RGA-100 residual gas analyzer was modified for the research of electron beam-generated plasma at forevacuum pressure range. The standard ionizer of the RGA-100 was replaced by three electrode extracting unit. We made the optimization of operation parameters in order to provide the maximum values of measured currents of any ion species. The modified analyzer was successfully tested with beam plasma of argon, nitrogen, oxygen, and hydrocarbons.

Measuring the electron density, temperature, and electronegativity in electron beam-generated plasmas produced in argon/SF6 mixtures

This paper presents measurements of electron density (ne0), electron temperature (Te), and electronegativity (α) in electron beam-generated plasmas produced in mixtures of argon and SF6 using Langmuir probes and plasma resonance spectroscopy. Langmuir probe measurements are analyzed using a model capable of handling multi-component plasmas with both positive and negative ions. Verification of the model is provided through plasma frequency resonance measurements of ne0. The results suggest a simple approach to ascertaining α in negative-ion-containing plasmas using Langmuir probes alone. In addition, modest amounts of SF6 are shown to produce sharp increases in both Te and α in electron beam generated plasmas.

Electron Beam Generated Plasmas for Ultra Low Te Processing

The Naval Research Laboratory (NRL) has developed a processing system based on an electron beam-generated plasma. Unlike conventional discharges produced by electric fields (DC, RF, microwave, etc.), ionization is driven by a high-energy (∼ few keV) electron beam, an approach that can be attractive to atomic layer processing applications. In particular, high electron densities (1010- 1011 cm−3) can be produced in electron beam generated plasmas, where the electron temperature remains between 0.3 and 1.0 eV. Accordingly, a large flux of ions can be delivered to substrate surfaces with kinetic energies in the range of 1 to 5 eV. This provides the potential for controllably etching and/or engineering both the surface morphology and chemistry with monolayer precision. This work describes the electron beam driven plasma processing system, with particular attention paid to system characteristics and the ability to control the generation and delivery of ions to the surface and their energies.

Measurement of ion energy distributions using a combined energy and mass analyzer

A method is described for measuring ion energy distributions using a commercially available, combined energy analyzer/mass spectrometer. The distributions were measured at an electrode located adjacent to pulsed, electron beam-generated plasmas produced in argon. The method uses energy-dependent tuning and was tested for various plasma conditions. The results indicate an improved collection efficiency of low-energy ions when compared to conventional approaches in measuring ion energy distributions.

Time-resolved diagnostics in a pulsed, electron beam-generated plasma

Time-resolved ion flux and energy distributions were measured at an electrode located adjacent to a pulsed, electron beam-generated plasma produced in argon. A Langmuir probe was also used to determine time-dependent electron temperature and plasma density. Temporal variations in the incident Ar/sup +/ and Ar/sup +2/ ion energy and flux were correlated to changes in the electron temperature and plasma density. The evolution of the plasma density and ion flux is understood by considering the loss mechanisms of each ion species.

The effect of a carbon-carbon double bond on electron beam-generated plasma decomposition of trichloroethylene and 1,1,1-trichloroethane

The effect of a carbon-carbon double bond on the energy required for decomposition in an electron beam-generated plasma reactor is studied by comparing the decomposition of trichloroethylene and 1,1,1-trichloroethane. A reaction mechanism for TCE decomposition based on a chlorine radical chain reaction is presented which accounts for the formation of all of the experimentally observed reaction products. TCE decomposition is autocatalyzed by reaction products, whereas TCA decomposition is inhibited. The rate expression for the decomposition of TCE in the reactor is determined to be r=−[T](15.07[T0]−0.40+0.006{[T0]−[T]}), where [T] and [T0] are both in ppm, and r is in ppm Mrad−1. The energy expense ɛ for TCE decomposition is determined as a function of inlet concentration. For 99% decomposition of 100 ppm TCE in air, ɛ=28 eV/molecule, and ɛ=2.5 eV/molecule at 3000 ppm. This is only 2.5–5% of the amount of energy required to decompose a similar amount of TCA as reported by the authors in a previous study. By comparing the energy requirements for TCE decomposition to those for TCA decomposition, the TCE reaction chain length is determined to increase from approximately 20 at 100 ppm initial TCE concentration, to 40 at 3000 ppm.

Build-Up Process of Electron Beam-Generated Plasma in Magnetic Field

Build-Up Process of Electron Beam-Generated Plasma in Magnetic Field