Abstract
The Naval Research Laboratory (NRL) has developed a processing system based on an electron beam-generated plasma, where unlike conventional discharges produced by electric fields (DC, RF, microwave, etc.), ionization is driven by a high-energy (~keV) electron beam. The resulting plasmas are characterized by large electron densities (1010–1011cm−3) and low electron temperatures (0.3–1.0eV). Accordingly, a large flux of ions can be delivered to substrate surfaces with kinetic energies of only a few eV, a feature that can be attractive to processing applications that require low damage and atomic layer precision. This work describes the salient features of these plasmas produced in mixtures of argon and sulfur hexafluoride (SF6) and their use in silicon nitride etching, with particular attention paid to developing processing parameters relevant to atomic layer processing.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
