Electroluminescence Efficiency Research Articles

Thermally Activated Delayed Fluorescence Sensitizer with Through‐Space Charge Transfer Manipulated by Atom Distribution for Solution‐Processed Deep‐Blue Multi‐Resonance OLEDs

AbstractOrganic light‐emitting diodes (OLEDs) employing multi‐resonance (MR) emitters have attracted much attention due to their high luminescent efficiency and color purity, however, the development of deep‐blue multi‐resonance OLEDs is hindered by the lack of suitable sensitizers. Here a novel design strategy is reported for thermally activated delayed fluorescence sensitizer with high reverse intersystem crossing (kRISC) and radiative transition (kR) rate by regulating atom distribution of a spatially‐aligned carbazole donor/diphenylpyrimidine acceptor structure to manipulate through‐space charge transfer (CT) process. It is found that diphenylpyrimidine acceptor with 1,3‐position nitrogen atoms is un‐conjugated to bridging phenyl moiety by the conjugation node of pyrimidine, while the acceptor with 1,5‐position nitrogen atoms is conjugated to bridging phenyl through conjugation site, opening through‐bond CT pathway via bridging phenyl besides through‐space CT from spatial donor‐acceptor interactions. As a result, the sensitizer with 1,5‐position nitrogen atoms exhibits enhanced oscillator strength by 3.5 folds and accelerated kR of 3.57 × 107 s−1, while keeping high kRISC of 4.03 × 106 s−1 and high singlet (S1) state (2.88 eV). Solution‐processed OLEDs using the sensitizer and deep‐blue multi‐resonance emitter exhibit efficient narrowband electroluminescence with CIE coordinates of (0.14, 0.13) and EQEmax of 15.6%, representing the state‐of‐the‐art device performance for deep‐blue multi‐resonance OLEDs by solution process.

A New Organic Laser Material Design Toward Ultra-Low Amplified Spontaneous Red Emission and Ultra-Bright Electroluminescence.

Significant efforts are dedicated to developing new classes of organic semiconductor materials to achieve electrically pumped lasing. However, further advancements are necessary to understand the relationship between the structure and property for the creation of innovative laser materials with high stability, low triplet yield, ultra-low lasing threshold, and low-efficiency roll-off at ultra-bright electroluminescence. Here, a new design principle is validated for organic semiconductor laser materials, demonstrating simultaneous enhancement in the key figures of merit of low amplified spontaneous emission thresholds (Eth), efficient electroluminescence, and low triplet yields. By applying the Einstein stimulated emission rate equation and Strickler-Berg approximation, Two red-emitting laser dimers of Cibalackrot with different linkers are constructed, leading to giant enhancement (≈250%) in oscillator strengths, and stimulated emission cross-sections. When blended in poly(9,9-dioctylfluorene-alt-benzothiadiazole), the new dimers achieve an ultra-low Eth (4.5±0.3µJcm-2) in the deep red region (λASE=655nm), among the lowest reported for deep-red emitters. Organic light-emitting diodes (OLEDs) utilizing the dimer blend exhibit low-efficiency roll-off under DC mode. Under pulse operation, the OLEDs achieve high current densities (90Am-2) and ultrahigh brightness (≈710000cdm-2). These findings highlight the dimerization design as an excellent platform to advance organic semiconductor laser materials.

A 326 nm pure ultraviolet light sources achieved in a Ga[formula omitted]O[formula omitted] microwire heterojunction through interface optimization and surface-modification

Low-dimensional Ga2O3 single-crystals have caused widespread attentions in the potential of developing ultraviolet light sources due to its ultrabroad bandgap, low-budget, high thermally stable, high breakdown voltage and others. Herein, we exhibit a significant route to construct one-dimensional Ga2O3 microwire heterojunction deep-ultraviolet light-emitting diode (LED). The resulting electroluminescence is positioned at 326 nm with a narrow linewidth of about 22.5 nm, which is the shortest wavelengths once published for the Ga2O3-related light sources. In the well-fabricated LED, an intermediate AlN layer enables appropriately to manipulate band alignment of n-Ga2O3/p-GaN heterojunction, thus achieving efficient confinement of electron–holes spreading and radiative recombination within the Ga2O3 microwire active medium. Benefited from surface-modified Pt nanoparticles, the LED’s electroluminescence efficiency and brightness can be plasmonically boosted. More importantly, the peak energy at 3.8 eV obtained under forward bias, which is smaller than the Ga2O3 bandgap, could be resulted from radiative recombination of weakly-bounded electron–holes inside the Ga2O3 microwires. Therefore, the Ga2O3 monocrystalline wires synthesized using high-temperature carbothermal reduction, are expected as promising-looking candidates to develop environmentally friendly, easy miniaturization, highly-stable deep-ultraviolet light sources and photonic devices.

Understanding the Nonradiative Charge Recombination in Organic Photovoltaics: From Molecule to Device

AbstractOrganic photovoltaics (OPVs) have made significant strides with efficiencies now exceeding 20%, positioning them as potential competitors to inorganic solar technologies. One of the most critical challenges toward this goal is the severe open‐circuit voltage (Voc) loss caused by the nonradiative charge recombination (NRCR). Herein, this review comprehensively summarizes the NRCR mechanisms and suppression techniques of OPVs across various scales from molecule to device. Specifically, the origins of NRCR in a single molecule are first summarized, and molecular design principles toward high photoluminescence quantum yield are reviewed following the Marcus theory. Next, the effect of aggregation on NRCR is reviewed, as well as the molecular and processing strategies to modulate the film packing for NRCR suppression. Furthermore, the progresses in the avoidance of nonradiative loss pathways mediated by charge transfer states and triplet states in donor:acceptor bulk heterojunctions are tracked. Besides, the interfacial optimization and device structure design to maximize the electroluminescent quantum efficiency are presented. Finally, several potential pathways toward curtailing NRCR for high‐performance OPVs are outlined. Therefore, this review shows an insightful perspective to understand and mitigate the NRCR at multi‐scales, and is poised to provide a clear roadmap for the next breakthrough of OPVs.

Efficient Electroluminescence from Organic Fluorophore-Containing Perovskite Films.

Two-dimensional perovskites containing an organic fluorophore can be a unique emitter for light-emitting diodes (LEDs). However, external quantum efficiencies (EQEs) of fluorophore-containing perovskite LEDs reported thus far are still very low. In this study, these are able to boost the EQE to ≈10% by choosing an organic fluorophore with appropriate energy levels for the perovskite structure organization. In the fluorophore-containing perovskite LEDs, carrier transport and exciton formation take place in the perovskite's metal halide framework, thereby avoiding the direct formation of nonradiative triplet excitons on the organic fluorophores. Subsequently, the bright triplet excitons formed in the metal halide framework are transferred to form the radiative singlet states of the organic fluorophores, leading to efficient electroluminescence (EL) from the organic fluorophores regularly dispersed inside the perovskite structure. Unexpectedly higher light-outcoupling efficiency, which is caused by the light scattering in the polycrystalline perovskite layer, will be another reason for efficient EL. These findings will contribute toward the fabrication of LED-based products with high performance at a low cost.

Preparation and Photophysical Properties of Znq2 Metallic Nanomaterials

AbstractBis(8‐hydroxyquinolates) Zinc (Znq2) can be used as a light‐emitting layer material in OLED devices to achieve its efficient electroluminescence effect. In this paper, Znq2 powder has been successfully synthesized and modified by the physical vapor deposition (PVD) method. Precursors and nano‐materials are characterized by XRD, SEM, PL, and so on. The performance of the modified material has been significantly improved. The emission intensity and absorption intensity in the deposited products increased with the increase in PVD temperature. At 453 K, luminous properties such as luminous intensity reach the optimal value including its fluorescence lifetime. Fluorescence lifetime values vary from 13 to 17 ns with the increase in temperature. The luminescence mechanism is also discussed. The energy gap and absorption spectrum of HOM‐LUMO are calculated by the DFT/UB3LYP method. The experimental values agree well with the theoretical values. The nanomaterial crystals modified by PVD technology are more orderly, impurities are reduced, and the luminous stability of the material is improved, which may be one of the reasons for the relatively slow decline in product life. The research combined with theoretical simulation is expected to be helpful to the research and promotion of such materials.

Dendritic Oligomers‐Based Exciplex Emitters Realizing Solution‐Processed Organic Light‐Emitting Diodes with Nearly 30% External Quantum Efficiency

AbstractDue to the feature of the strong intermolecular interactions causing aggregation‐caused excitons quenching (ACQ) of solution process, realizing high‐performance solution‐processed organic light‐emitting diodes (OLEDs) based on thermally activated delayed fluorescence (TADF) emitters remains a formidable challenge nowadays. To address this issue, herein, a novel strategy is proposed to construct solution‐processable ternary exciplex emitters by utilizing the dendritic oligomer as the substrate, simultaneously realizing excellent solution‐process adaptability, good dispersibility to restrain harmful ACQ, and improved exciton utilization with multiple reverse intersystem crossing channels. Accordingly, dendritic oligomer‐based exciplex systems are constructed by combining small‐molecule donor and acceptor components with the multi‐carbazole‐substituted tetraphenylsilane‐core analog as substrate. And their film morphologies, photoluminescence quantum yields (ΦPLs), and non‐radiative decay rates of triplet excitons (knrTs) are significantly improved. Among them, DMAC‐DPS:PO‐T2T:SimCP3 exhibits the highest ΦPL of 97.5% and the lowest knrT of 1.0 × 103 s−1, and realizes the best maximum external quantum efficiency of 29.7% in solution‐processed OLED, which is comparable with the highest electroluminescence efficiencies of all solution‐processable emitters. Therefore, this work will provide a prospective pathway to develop efficient solution‐processable exciplex emitters and promote the progress of solution‐processed OLEDs.

1,5‐Diazocine‐Based Diaryl Ketones: Design, Synthesis, and Optoelectronic Properties

ABSTRACTThree novel heterocyclic host based on diaryl ketone‐tethered 1,5‐diazocines were designed and synthesized for applications in phosphorescent organic light‐emitting diodes (PhOLEDs). The hosts were derived by anchoring the naphthyl ketone (TBN), anthryl ketone (TBA), and phenanthryl ketone (TBP) to the 1,5‐diazocine core. The materials were successfully characterized using spectroscopic techniques. TBN and TBP exhibited low external quantum efficiency of 1.5% and 1.9% when explored as hosts in PhOLED devices. Among the series, TBP exhibited the highest luminance of 4160 cd/m2, maximum luminance efficiency of 6.3 cd/A, and power efficiency of 3.21 lm/w, when doped with Ir(ppy)3 in PhOLED. Nevertheless to our surprise, TBA manifested the lowest device performance than other TBs as a host due to low carrier mobility caused by a highly twisted structure as deciphered from the comparative analysis of single‐crystal structure that could impede carrier transport crucial for efficient electroluminescence. The outcomes of electroluminescence were validated and explained with analysis of single‐crystal structure, and also with the aid of density functional theory.

Intraband cascade electroluminescence with weakly n-doped HgTe colloidal quantum dots.

Room temperature 6μm intraband cascade electroluminescence (EL) is demonstrated with lightly n-doped HgTe colloidal quantum dots of ∼8nm diameter deposited on interdigitated electrodes in a metal-insulator-metal device. With quantum dot films of ∼150nm thickness made by solid-state-ligand-exchange, the devices emit at 1600cm-1 (6.25μm), with a spectral width of 200cm-1, determined by the overlap of the 1Se-1Pe intraband transition of the quantum dots and the substrate photonic resonance. At the maximum current used of 20 mA, the bias was 30V, the external quantum efficiency was 2.7%, and the power conversion efficiency was 0.025%. Adding gold nano-antennas between the electrodes broadened the emission and increased the quantum efficiency to 4.4% and the power efficiency to 0.036%. For these films, the doping was about 0.1 electron/dot, the electron mobility was 0.02cm2V-1s-1, and the maximum current density was 0.04kAcm-2. Higher mobility films made by solution ligand exchange show a 20-fold increase in current density and a 10-fold decrease in EL efficiencies. Electroluminescence with weak doping is interesting for eventually achieving electrically driven stimulated emission, and the requirements for population inversion and lasing are discussed.

Interfacial Dipole Engineering for Energy Level Alignment in NiOx-Based Quantum Dot Light-Emitting Diodes.

The solution-derived non-stoichiometric nickel oxide (NiOx) is a promising hole-injecting material for stable quantum dot light-emitting diodes (QLEDs). However, the carrier imbalance due to the misalignment of energy levels between the NiOx and polymeric hole-transporting layers (HTLs) curtails the device efficiency. In this study, the modification of the NiOx surface is investigated using either 3-cyanobenzoic acid (3-CN-BA) or 4-cyanobenzoic acid (4-CN-BA) in the QLED fabrication. Morphological and electrical analyses revealed that both 4-CN-BA and 3-CN-BA can enhance the work function of NiOx, reduce the oxygen vacancies on the NiOx surface, and facilitate a uniform morphology for subsequent HTL layers. Moreover, it is found that the binding configurations of dipole molecules as a function of the substitution position of the tail group significantly impact the work function of underlying layers. When integrated in QLEDs, the modification layers resulted in a significant improvement in the electroluminescent efficiency due to the enhancement of energy level alignment and charge balance within the devices. Specifically, QLEDs incorporating 4-CN-BA achieved a champion external quantum efficiency (EQE) of 20.34%, which is a 1.8X improvement in comparison with that of the devices utilizing unmodified NiOx (7.28%). Moreover, QLEDs with 4-CN-BA and 3-CN-BA modifications exhibited prolonged operational lifetimes, indicating potential for practical applications.

High Efficiency Non‐Doped Organic Light Emitting Diodes Based on Pure Organic Room Temperature Phosphorescence by High‐Lying Singlet Exciton Fission

AbstractHeavy‐metal‐free pure organic room temperature phosphorescence (ORTP) holds great potential in the field of organic optoelectronic devices owing to low economic cost, simple preparation techniques, and high exciton utilization. However, it is still filled with challenges in realizing high efficiency organic light‐emitting diodes (OLEDs) and exploring the internal physical mechanism based on these ORTP molecules. Here, a high‐performance OLED induced by an unexpected interfacial spin‐mixing process between the ORTP molecule and interlayers is demonstrated, and the high efficiency electroluminescence (EL) mechanism is studied through magneto–electroluminescence (MEL) and magneto–photoluminescence (MPL) measurements. The steady‐state and transient PL properties imply that the interfacial effect is related to a high‐lying singlet fission (HLSF) process in the ORTP molecule itself. Further, the HLSF process and the corresponding energy level position are confirmed by the incident wavelength‐ and temperature‐dependent PL spectra and the magnetic‐field‐dependent transient PL. Finally, by optimizing the interfacial material adjacent to the emissive layer to utilize this interfacial spin mixing effect, a high‐efficiency non‐doped ORTP‐OLED with external quantum efficiency of 16% and CIE coordinates of (0.27, 0.49) is developed. The proposed mechanism during the EL process will give insight to produce more efficient OLEDs based on ORTP materials in the future.

Boron cluster-based TADF emitter via through-space charge transfer enabling efficient orange-red electroluminescence

Thermally activated delayed fluorescence (TADF) materials driven by a through-space charge transfer (TSCT) mechanism have garnered wide interest. However, access of TSCT-TADF molecules with long-wavelength emission remains a formidable challenge. In this study, we introduce a novel V-type D-A-D-A' emitter, Trz-mCzCbCz, by using a carborane scaffold. This design strategically incorporates carbazole (Cz) and 2,4,6-triphenyl-1,3,5-triazine (Trz) as donor and acceptor moieties, respectively. Theoretical calculations alongside experimental validations affirm the typical TSCT-TADF characteristics of this luminogen. Owing to the unique structural and electronic attributes of carboranes, Trz-mCzCbCz exhibits an orange-red emission, markedly diverging from the traditional blue-to-green emissions observed in classical Cz and Trz-based TADF molecules. Moreover, bright emission in aggregates was observed for Trz-mCzCbCz with absolute photoluminescence quantum yield (PLQY) of up to 88.8%. As such, we have successfully fabricated five organic light-emitting diodes (OLEDs) by utilizing Trz-mCzCbCz as the emitting layer. It is important to note that both the reverse intersystem crossing process and the TADF properties are profoundly influenced by host materials. The fabricated OLED devices reached a maximum external quantum efficiency (EQE) of 12.7%, with an emission peak at 592 nm. This represents the highest recorded efficiency for TSCT-TADF OLEDs employing carborane derivatives as emitting layers.

High-Performance Tunable Near-Infrared Emitters of Cr3+-Activated Garnet Phosphor Enabled by Chemical Unit Co-Substitution.

The escalating demand for portable near-infrared (NIR) light sources has posed a formidable challenge to the development of NIR phosphors characterized by high efficiency and exceptional thermal stability. Taking inspiration from the chemical unit co-substitution strategy, high-performance tunable (Lu3- xCax)(Ga5- xGex)O12:6%Cr3+ (x = 0-3) phosphors are designed with an emission center from 704 to 780nm and a broadest full width at half maximum (FWHM) of up to 172nm by introducing Ca2+ and Ge4+ ions into the garnet structure. In particular, Lu3Ga5O12:6%Cr3+ demonstrates an anti-thermal quenching phenomenon (I423K = 113.1%). Compared to Lu3Ga5O12:6%Cr3+, Lu2CaGa4GeO12:6%Cr3+ exhibits significantly improved FWHM and IQE by 108nm and 25.5%, respectively, while maintaining good thermal stability (I423K = 80.4%). Finally, Lu2CaGa4GeO12:6%Cr3+ phosphor is combined with a 465nm blue LED chip to fabricate NIR LED devices, exhibiting a NIR electroluminescence efficiency of 13.31%@100mA and demonstrating successful applications in nocturnal illumination and biomedical imaging technology. This work offers a fresh perspective on the design of highly efficient NIR garnet phosphors.

Tunable Ag Nanocavity Enhanced Green Electroluminescence from SiNx:O Light-Emitting Diode.

As the driving source, highly efficient silicon-based light emission is urgently needed for the realization of optoelectronic integrated chips. Here, we report that enhanced green electroluminescence (EL) can be obtained from oxygen-doped silicon nitride (SiNx:O) films based on an ordered and tunable Ag nanocavity array with a high density by nanosphere lithography and laser irradiation. Compared with that of a pure SiNxO device, the green electroluminescence (EL) from the SiNx:O/Ag nanocavity array device can be increased by 7.1-fold. Moreover, the external quantum efficiency of the green electroluminescence (EL) is enhanced 3-fold for SiNx:O/Ag nanocavity arrays with diameters of 300 nm. The analysis of absorption spectra and the FDTD calculation reveal that the localized surface plasmon (LSP) resonance of size-controllable Ag nanocavity arrays and SiNx:O films play a key role in the strong green EL. Our discovery demonstrates that SiNx:O films coupled with tunable Ag nanocavity arrays are promising for silicon-based light-emitting diode devices of the AI period in the future.

Recent Advances in Electroluminescent Metallic Nanoclusters: From Materials to Devices.

Metallic nanoclusters (MNCs) were developed rapidly in recent decades, owing to their unique electronic structures and excited state characteristics, leading to their wide applications. Luminescence as one of the most important functions for MNCs has also been used to realize biodetection, displays, and lighting, through either electrochemiluminescence (ECL) or electroluminescence (EL). Both emissive properties and electrochemical activities of MNCs were utilized to enhance ECL and EL through facilitating exciton formation and radiation, rendering the rapid emerging of the latter in the last ten years. Through ligand modification, radiative excited-state components were increased to realize state-of-the-art photo- and electroluminescence efficiencies up to ∼100% and ∼30%, as well as ultralow biodetection limits. Nonetheless, material selection space and processing technologies are still limited. Herein, we overview and discuss recent advances of MNCs-based ECL and EL, through both aspects of materials/systems and devices, which would enlighten continuous innovations in optoelectronic MNCs.

Efficient deep-blue electroluminescence from Ce-based metal halide

Rare earth ions with d-f transitions (Ce3+, Eu2+) have emerged as promising candidates for electroluminescence applications due to their abundant emission spectra, high light conversion efficiency, and excellent stability. However, directly injecting charge into 4f orbitals remains a significant challenge, resulting in unsatisfied external quantum efficiency and high operating voltage in rare earth light-emitting diodes. Herein, we propose a scheme to solve the difficulty by utilizing the energy transfer process. X-ray photoelectron spectroscopy and transient absorption spectra suggest that the Cs3CeI6 luminescence process is primarily driven by the energy transfer from the I2-based self-trapped exciton to the Ce-based Frenkel exciton. Furthermore, energy transfer efficiency is largely improved by enhancing the spectra overlap between the self-trapped exciton emission and the Ce-based Frenkel exciton excitation. When implemented as an active layer in light-emitting diodes, they show the maximum brightness and external quantum efficiency of 1073 cd m−2 and 7.9%, respectively.

Surface-binding molecular multipods strengthen the halide perovskite lattice and boost luminescence

Reducing the size of perovskite crystals to confine excitons and passivating surface defects has fueled a significant advance in the luminescence efficiency of perovskite light-emitting diodes (LEDs). However, the persistent gap between the optical limit of electroluminescence efficiency and the photoluminescence efficiency of colloidal perovskite nanocrystals (PeNCs) suggests that defect passivation alone is not sufficient to achieve highly efficient colloidal PeNC-LEDs. Here, we present a materials approach to controlling the dynamic nature of the perovskite surface. Our experimental and theoretical studies reveal that conjugated molecular multipods (CMMs) adsorb onto the perovskite surface by multipodal hydrogen bonding and van der Waals interactions, strengthening the near-surface perovskite lattice and reducing ionic fluctuations which are related to nonradiative recombination. The CMM treatment strengthens the perovskite lattice and suppresses its dynamic disorder, resulting in a near-unity photoluminescence quantum yield of PeNC films and a high external quantum efficiency (26.1%) of PeNC-LED with pure green emission that matches the Rec.2020 color standard for next-generation vivid displays.

Positive impact of surface defects on Maxwell's displacement current-driven nano-LEDs: The application of TENG technology

As the core component of a nanopixel light-emitting display, the GaN-based nanoscale light-emitting diode (nLED) faces the problem of low electroluminescence efficiency resulting from the introduction of surface defects when its lateral size is reduced to the nanometer scale. Thus, reducing the surface defect density is an important direction in nLED-related research. This study, with the triboelectric nanogenerator-driven LED as its inspiration, reveals that surface defects have a positive impact on the performance of nLEDs driven by Maxwell’s displacement current, and we call the related driving mode the noncarrier injection mode. Through finite element simulations, we studied the dynamic variations of the carrier concentration, the energy band, and the light emission rate to analyze the impact of the behavior of surface defect excitation on device performance. We found that surface defects can act as electron pumps under the combined effect of the reverse electric field and the built-in electric field and can generate carriers through surface defect excitation to increase the intensity of noncarrier injection luminescence, which is completely different from the traditional understanding of surface defects. In addition, we propose a tapered structure to further increase the light emission rate by regulating the behaviors of radiation recombination and surface defect excitation. The results of this work open a new perspective on the impacts of surface defects on nLEDs and provide significant information for additional applications of Maxwell's displacement current.

Simultaneous control of carrier transport and film polarization of emission layers aimed at high-performance OLEDs

The orientation of a permanent dipole moment during vacuum deposition results in the occurrence of spontaneous orientation polarization (SOP). Previous studies reported that the presence of SOP in organic light-emitting diodes (OLEDs) lowers electroluminescence efficiency because electrically generated excitons are seriously quenched by SOP-induced accumulated charges. Thus, the SOP in a host:guest-based emission layer (EML) should be finely controlled. In this study, we demonstrate the positive effect of dipole-dipole interactions between polar host and polar emitter molecules on the OLED performance. We found that a small-sized polar host molecule that possesses both high molecular diffusivities and moderate permanent dipole moment, well cancels out the polarization formed by the SOP of the emitter molecules in the EML without a disturbance of the emitter molecules’ intrinsic orientation, leading to high-performance of OLEDs. Our molecular design strategy will allow emitter molecules to pull out the full potential of the EMLs in OLEDs.

High-n Phase Suppression for Efficient and Stable Blue Perovskite Light-Emitting Diodes.

Quasi-2D perovskites light-emitting diodes (PeLEDs) have achieved significant progress due to their superior optical and electronic properties. However, the blue PeLEDs still exist inefficient energy transfer and electroluminescence performance caused by mixed multidimensional phase distribution. In this work, transition metal salt (zinc bromide, ZnBr2) is introduced to modulate phase distributions by suppressing the nucleation of high n phase perovskites, which effectively shortens the energy transfer path for blue emission. Moreover, ZnBr2 also facilitates energy level matching and reduces non-radiative recombination, thus improving electroluminescence (EL) efficiency. Benefiting from these combined improvements, an efficient blue PeLEDs is obtained with a maximum external quantum efficiency (EQE) of 16.2% peaking located at 486nm. This work provides a promising approach to tune phase distribution of quasi-2D perovskites and achieving highly efficient blue PeLEDs.