Electrothermal Annealing Research Articles

Local Electro-Thermal Annealing for Repair of Total Ionizing Dose-Induced Damage in Gate-All-Around MOSFETs

A shift in threshold voltage caused by total ionizing dose (TID) is problematic in the MOSFET, especially in aerospace applications. Unlike traditional methods to minimize damage from TID, in this letter, a novel electro-thermal annealing method to cure the TID-induced damage is demonstrated for the first time. In this concept, the conventional hardening or shielding techniques are not used. In a gate-all-around MOSFET structure, dual gate electrodes were employed as an embedded nanowire heater to generate localized Joule heat, which can anneal insulating layers, including gate oxide and spacer. With the Joule heat, trapped positive charges produced by the TID were neutralized within 200 ms. A damaged device with a radiation-induced threshold voltage shift was repaired to the level of a fresh pristine device.

Effect of electrothermal annealing on the transformation behavior of TiNi shape memory alloy and two-way shape memory spring actuated by direct electrical current

In this work, the effect of electrothermal annealing on the transformation characterization of TiNi shape memory alloy and the electrothermal actuating characteristics of a two-way shape memory effect (TWSME) extension spring were investigated with direct electrical current. The results showed that with increasing direct electrical current density, the B2→R-phase transformation shifts to a lower temperature and R-phase→B19′ shifts to a higher temperature in the cooling process. When annealing electrical current density reached 12.2 A/mm 2, the R-phase disappeared and austenite transformed into martensite directly. The electrothermal annealing was an effective method of heat treatment in a selected part of shape memory alloy device. The electrothermal actuating characteristics of a TWSME spring showed that the time response and the maximum elongation greatly depended on the magnitude of the electrical current.

Electron spin resonance and polarisation reversal on electrothermally annealed X-ray irradiated TGS

The polarisation reversal of electrothermally annealed X-ray irradiated TGS crystals is studied. After annealing the switching times are shorter and the asymmetry of the switching behaviour relative to the direction of the switching field becomes more pronounced. Electron spin resonance measurements show that electrothermal annealing causes a marked amplification of the recombination of the NH3CHCOOH radical. On the basis of the experimental results the microscopic mechanism of electrothermal annealing is discussed.

Unipolarity of Tgs-crystals induced in paraelectric phase

The unipolar structure that is the steady self-biased hysteresis loop can be created by the electrothermal annealing in the paraelectric phase of pure TGS-crystals grown in the ferroelectric phase. It also occurs in X-irradiated TGS and TGS-Cr. The formation of unipolarity in all these crystals is due to the same specific defects which are of an intrinsic origin. The conductivity measurements in the paraelectric phase confirms the conclusion that the intrinsic origin of the defects is responsible for unipolarity in these three types of TGS-crystals.