Electrical Shunt Research Articles

Effect of Ag–Te alloys on pH sensitivity of Ag2O–TeO2 glass/stainless steel enamel

Glass pH sensors are unsuitable for in vivo biomedical, clinical, or food applications because of brittleness of glass, the difficulty in measurement of small volumes and complex matrices, and the need for calibration. Herein, a novel enamel reference electrode for pH sensors is developed using a binary xAg2O·(100–x)TeO2 glass/stainless steel (SUS) electrode. Subsequently, the effects of Ag2O content on the precipitated crystalline phases and pH sensitivity of Ag2O–TeO2 glass/SUS electrodes are examined. The results indicate that the xAg2O·(100–x)TeO2 glass/SUS samples exhibit relatively low pH sensitivity. The pH sensitivities of the samples can be classified into two distinct groups. The first group, comprising samples with an Ag2O content of 25 mol% or more, exhibits a pH sensitivity higher than 10 %. The second group, comprising samples with an Ag2O content of 22 mol% or less, exhibits a pH sensitivity of less than 10 %. The pH sensitivity tends to decrease with increase in stutzite fraction in Ag–Te alloys. Results of X-ray diffraction measurements and transmission electron microscopy observations indicate that the hessite and stutzite Ag–Te alloys, which are minor and conductive, are the primary contributors to the low pH sensitivity observed. Moreover, the pH sensitivity of xAg2O·(100–x)TeO2/SUS is observed to be between those of the Ag–Te alloy and the Ag2O–TeO2 glass matrix. We propose occurrence of an electrical shunt should occur between the Ag–Te alloy and the Ag+-ion conductive Ag2O–TeO2 glass matrix. Regarding xAg2O·(100–x)TeO2 glass/SUS, the 20Ag2O·80TeO2 glass/SUS to 21Ag2O·79TeO2 glass/SUS compositions represent promising candidates as for KCl-leakage-free reference electrodes for pH sensors.

Large‐Area Flexible Organic Photovoltaic Modules on Smoothened Silver Nanowire Transparent Electrodes with Thick Electron Transporting Layer

AbstractHigh‐efficiency large‐area flexible organic photovoltaic (OPV) modules are still challenging. Electrical shunt and shortage generally occur due to surface roughness or spikes that result in low efficiency. In this work, a thick electron transporting layer (ETL) of zinc‐chelated polyethylenimine (PEI‐Zn) is introduced to smoothen the surface of silver nanowires (AgNWs) transparent electrodes. The smoothened surface of AgNWs electrodes helped to suppress the electrical leakage or shortage. Thicker PEI‐Zn layers are required to overcome the open‐circuit voltage (VOC) loss when the device area increases. For large‐area OPV modules on AgNWs electrodes, a high thickness of PEI‐Zn up to 350 nm can deliver high VOC as well as power conversion efficiency (PCE). Based on the AgNWs transparent electrode coated by thick PEI‐Zn ETL, a PCE of 12.50% is achieved for 35.2 cm2 flexible OPV modules certified by a third party. The modules exhibited good illumination stability and mechanical flexibility.

Calibration-free and ready-to-use wearable electroanalytical reporting system (r-WEAR) for long-term remote monitoring of electrolytes markers

A major bottleneck in the development of wearable ion-selective sensors is the inherent conditioning and calibration procedures at the user's end due to the signal's instability and non-uniformity. To address this challenge, we developed a strategy that integrates three interdependent materials and device engineering approaches to realize a Ready-to-use Wearable ElectroAnalytical Reporting system (r-WEAR) for reliable electrolytes monitoring. The strategy collectively utilized (1) finely-configured diffusion-limiting polymers to stabilize the electromotive force in the electrodes, (2) a uniform electrical induction in electrochemical cells to normalize the open-circuit potential (OCP), and (3) an electrical shunt to maintain the OCP across the entire sensor in the r-WEAR. The approaches jointly enable fabrication of homogeneously stable and uniform ion-selective sensors, eliminating common conditioning and calibration practices. As a result, the r-WEAR demonstrated a signal's variation down to ±1.99 mV with a signal drift of 0.5 % per hour (0.12 mV h−1) during a 12-h continuous measurement of 10 sensors and a signal drift as low as 13.3 μV h−1 during storage. On-body evaluations of the r-WEAR for four days without conditioning and re-/calibration further validated the sensor's performance in realistic settings, indicating its remarkable potential for practical usage in a user operation-free manner in wearable healthcare applications.

Efficient detection and analysis of shunt faults in electric power distribution systems (EPDS) using DCFC and EFDC algorithm: a modeling and simulation approach

ABSTRACT The electrical power distribution system (EPDS) is an essential component of the power system. Electricity and its services have risen enormously in the recent period, and the primary task of EPDS is to distribute uninterrupted electricity to the consumer. The EPDS comprises numerous intricate, unpredictable, and interlinked components that are frequently susceptible to disruption or malfunction. Faults on EPDS are intended to be appropriately recognized and categorized before being eliminated as quickly as feasible. An efficient fault recognition mechanism makes relaying operations realistic, fast, safe, and dependable. In this article, we introduce a MATLAB simulation model based on the Electrical Fault Detection and Classification (EFDC) algorithm for shunt fault analysis in the EPDS and distinguish among heterogeneous types of shunt fault based on current and voltage waveform throughout the fault. The recommended fault scrutiny and isolation framework might aid in segregating malfunctioning sections from healthy EPDS. Numerous electrical shunt faults are modeled and simulated to detect such deficient behaviors. The suggested EFDC algorithm’s efficacy, including Digital Comparative Fault Classifier (DCFC), is examined by simulating different kinds of shunt faults throughout ring-main EPDS’s source and load regions to evaluate the proposed technique’s adaptability, as well as the outcomes are promising.

A piezoelectric nonlinear energy sink shunt for vibration damping

The theoretical study and experimental validation of a nonlinear shunt circuit for piezoelectric vibration damping is investigated here. The circuit consists of a resistor, an inductor and a nonlinear cubic voltage source. The shunt acts as an electrical analog to the mechanical nonlinear energy sinks (NESs). These mechanical NESs are passive vibration absorbers that typically have a cubic nonlinear stiffness. They have attractive properties such as saturation of the host system’s vibration amplitude and strongly modulated response. This increases its operational frequency bandwidth and robustness against variations in the properties of host systems compared to linear vibration absorbers. However, the nonlinear nature may induce isolated responses in the host system that induce high vibration amplitudes. This paper investigates if these attractive properties also occur in the electric nonlinear energy sink shunt. An analytical expression for the frequency response is derived through the complexification-averaging method. Bifurcations in the frequency response reveal the occurrence of a quasi-periodic vibration energy exchange between the host system and the voltage over the electrodes of piezoelectric material. This is the main mechanism behind the amplitude saturation of the host system. Other bifurcations also reveal the existence of isolated responses. The nonlinear shunt is then realized with analog multipliers and a synthetic inductor and its performance in vibration damping is experimentally verified for a cantilever beam.

Magneto-optical measurement of magnetic field and electrical current on a short pulse high energy pulsed power accelerator

We describe a direct magneto-optical approach to measuring the magnetic field driven by a narrow pulse width (<10 ns), 20 kA electrical current flow in the transmission line of a high energy pulsed power accelerator. The magnetic field and electrical current are among the most important operating parameters in a pulsed power accelerator and are critical to understanding the properties of the radiation output. However, accurately measuring these fields and electrical currents using conventional pulsed power diagnostics is difficult due to the strength of ionizing radiation and electromagnetic interference. Our approach uses a fiber coupled laser beam with a rare earth element sensing crystal sensor that is highly resistant to electromagnetic interference and does not require external calibration. Here, we focus on device theory, operating parameters, results from an experiment on a high energy pulsed power accelerator, and comparison to a conventional electrical current shunt sensor.

Nanoscale Size Control of Si Pyramid Texture for Perovskite/Si Tandem Solar Cells Enabling Solution‐Based Perovskite Top‐Cell Fabrication and Improved Si Bottom‐Cell Response

AbstractA monolithic perovskite/silicon tandem solar cell architecture is employed to surpass the single‐junction efficiency limit. Recently, there is an increasing need for the double‐sided textures in the Si bottom cell to be compatible with the solution‐processed perovskite top cell from an industrial perspective. Herein, a silver‐assisted alkaline etching method is applied to fabricate nanoscale Si pyramid textures, and the influence of varying pyramid size (400–900 nm) on the interface morphology and the performance of perovskite/Si tandem cells is investigated. It is demonstrated that electrical shunting starts to increase, and the open‐circuit voltage (VOC) decreases when the texture size exceeds the perovskite thickness (~500nm) due to the non‐uniform top‐cell formation on a rough Si surface. However, when the texture size is reduced to 400–500 nm, all spin‐coated perovskite top‐cell component layers exhibit an even form over the nanopyramid Si, resulting in a high VOC and an enhanced Si bottom cell current (≈1.0 mA cm−2) due to the suppressed reflectance at the top/bottom cell interface without using optical couplers. The double‐sided nanopyramid Si texture offers opportunities to increase tandem cell efficiency while reducing its production cost compared with the commonly used single‐sided textured Si.

Atomic layer deposition of NiO applied in a monolithic perovskite/PERC tandem cell

Monolithic perovskite/silicon tandem photovoltaics have fueled major research efforts as well as gaining rapid industrial interest. So far, most of the literature has focused on the use of currently more expensive silicon heterojunction bottom cell technology. This work demonstrates a perovskite/silicon tandem solar cell based on the industrially dominant passivated emitter and rear cell (PERC) technology. In detail, we investigate a tunnel recombination junction (TRJ) consisting of ITO/NiO/2-(9H-carbazol-9-yl)ethyl] phosphonic acid (2PACz) and compare it with an ITO/2PACz TRJ. Specifically, the NiO layer is deposited by atomic layer deposition (ALD). Although ITO/2PACz-based tandem devices can reach more than 24% conversion efficiency, we observe that they suffer from a large spread in photovoltaic parameters due to electrical shunts in the perovskite top cell, caused by the inhomogeneity of the 2PACz layer on ITO. Instead, when ALD NiO is sandwiched between 2PACz and ITO, the surface coverage of 2PACz improves and the yield of the devices, in terms of all device parameters, also improves, i.e., the standard deviation decreases from 4.6% with ITO/2PACz to 2.0% with ITO/NiO/2PACz. In conclusion, thanks to the presence of NiO, the TRJ consisting of ITO/NiO/2PACz leads to a 23.7% efficient tandem device with narrow device efficiency distribution.

Tunable elastic wave modulation via local phase dispersion measurements of a piezoelectric metasurface with signal correlation enhancement

Tunable piezoelectric metasurfaces have been proposed as a means of adaptively steering incident elastic waves for various applications in vibration mitigation and control. Bonding piezoelectric material to thin structures introduces electromechanical coupling, enabling structural dynamics to be altered via tunable electric shunts connected across each unit cell. For example, by carefully calibrating the inductive shunts, it is possible to implement the discrete phase shifts necessary for gradient-based waveguiding behaviors. However, experimental validations of localized phase shifting are challenging due to the narrow bandgap of local resonators, resulting in poor transmission of incident waves and high sensitivity to transient noise. These factors, in combination with the difficulties in experimental circuitry synthesis, can lead to significant variability of data acquired within the bandgap operating region. This paper presents a systematic approach for extracting localized phase shifts by taking advantage of the inherent correlation between the incident and transmitted wavefronts. During this procedure, matched filtering greatly reduces noise in the transmitted signal when operating in or near bandgap frequencies. Experimental results demonstrate phase shifts as large as −170° within the locally resonant bandgap, with an average 28% reduction in error relative to a direct time domain measurement of phase, enabling effective comparison of the dispersive behavior with corresponding analytical and finite element models. In addition to demonstrating the tunable waveguide characteristics of a piezoelectric metasurface, this technique can easily be extended to validate localized phase shifting of other elastic waveguiding metasurfaces.

Heart rate variability assessment during work in personal protective equipment under environmental thermal load

Introduction. When performing work in open areas in the summer, electrical engineering personnel use shunt shielding kits to protect against industrial frequency electric fields. However, the use of personal protective equipment has an additional thermal load on the human body, which is assessed, among other things, by changes in the indicators of the functional state of the cardiovascular system.
 The study aims to assess the variability of the heart rate when working in shunting screening kits under conditions of modeling the thermal load of the environment.
 Materials and methods. The study carried out in seven volunteers using power frequency electric field personal protective equipment. Heart rate variability assessed for simulated elevated thermal load environment. The volunteers worked with physical activity (walking) of 60 minutes treadmill and 15 minutes rest in the same climatic conditions (recovery period) after. Temperature and humidity inside shunting shielding personal suit recorded. The determination and statistical analysis of heart rate variability based in electrocardiogram were performed. Based on the recording of an electrocardiogram, the authors carried out the determination and statistical analysis of heart rate variability indicators.
 Results. Volunteers heart rate variability analysis showed that stress index median values during work and recovery periods were 345 cu and 96 cu without shunting shielding personal suit. Work in shunting shielding personal suit showed that stress index median values were 196 cu and in recovery period 152 cu. RR-interval median values under work in personal protective equipment were lower (0.552 s) than without personal protective equipment (0.617 s). The results revealed the tendency to body thermoregulatory mechanisms strain increase in work time, characterized by RR-intervals differences with personal protective equipment use and without (ΔRR) — 0.057 s, and organism partial recovery during rest time (ΔRR — 0.113 s) with personal protective equipment.
 Limitations. The number of volunteers was due to the limited duration of the study.
 Conclusion. The results of cardiovascular system functional state assessment by heart rate variability indicate stress with regulatory systems overstrain with and without personal protective equipment. Power frequency electric field personal protective equipment makes additional external thermal load to human body as stress index (196 cu), RR-intervals (0.552 s) in work period and slight decrease in recovery period (152 cu and 0.566 s). Stress index high values in the recovery period associated with prolonged environment thermal load exposure due to climatic parameters and volunteers staying in PPE after the end of physical work.
 Ethics. The Local Ethics Committee of the Izmerov Research Institute of Occupational Health approved this study carried out under the WMA Declaration of Helsinki (record № 3 from 23.03.2022).

ClC Chloride Channels in Gram-Negative Bacteria and Its Role in the Acid Resistance Systems.

Pathogenic bacteria that colonize the human intestinal tract have evolved strategies to overcome acidic conditions when they pass through the gastrointestinal tract. Amino acid-mediated acid resistance systems are effective survival strategies in a stomach that is full of amino acid substrate. The amino acid antiporter, amino acid decarboxylase, and ClC chloride antiporter are all engaged in these systems, and each one plays a role in protecting against or adapting to the acidic environment. The ClC chloride antiporter, a member of the ClC channel family, eliminates negatively charged intracellular chloride ions to avoid inner membrane hyperpolarization as an electrical shunt of the acid resistance system. In this review, we will discuss the structure and function of the prokaryotic ClC chloride antiporter of amino acid-mediated acid resistance system.

Origin of the anomalous Hall effect at the magnetic insulator/heavy metals interface

Ferrimagnetic insulators (FIMIs) are considered to be promising candidates in spin–orbit torque (SOT) devices due to their ability to propagate a spin current by magnons without Ohmic losses owing to the absence of electronic scattering. Moreover, any electrical current shunt is avoided in magnetic insulating materials. On the other hand, SOT-induced magnetization switching is generally measured through the anomalous Hall effect (AHE) in FIMI/heavy metal (HM) systems. However, the origin of AHE in FIMI/HM remains elusive since charges flow only in the HM. Here, we experimentally demonstrate that the AHE has the same origin as the spin Hall magnetoresistance (SMR). To this end, we have studied two bilayer heterostructures, Tm3Fe5O12(TmIG)/W and TmIG/Pt, where we ensure opposite spin Hall effect (SHE) signs for two heavy metals (W and Pt). The magnitudes of AHE and SMR are found to be larger for TmIG/W than TmIG/Pt. We have also evidenced the identical polarity of AHE hysteresis in both systems revealing a square dependency on the spin Hall angle whereas the current-induced magnetization switching polarity in TmIG/W is opposite to that of TmIG/Pt as expected for opposite spin Hall angle signs. Our results establish that the AHE and the spin-Hall magnetoresistance in TmIG insulating ferromagnets and heavy metal bilayers originate from the same mechanism.

Mitigating Detrimental Effect of Self‐Doping Near the Anode in Highly Efficient Organic Solar Cells

AbstractPoly(3,4‐ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) has been one of the most established hole transport layers (HTL) in organic solar cells (OSCs) for several decades. However, the presence of PSS− ions is known to deteriorate device performance via a number of mechanisms including diffusion to the HTL‐active layer interface and unwanted local chemical reactions. In this study, it is shown that PSS− ions can also result in local p‐doping in the high efficiency donor:non‐fullerene acceptor blends – resulting in photocurrent loss. To address these issues, a facile and effective approach is reported to improve the OSC performance through a two‐component hole transport layer (HTL) consisting of a self‐assembled monolayer of 2PACz ([2‐(9H‐Carbazol‐9‐yl)ethyl]phosphonic acid) and PEDOT:PSS. The power conversion efficiency (PCE) of 17.1% using devices with PEDOT:PSS HTL improved to 17.7% when the PEDOT:PSS/2PACz two‐component HTL is used. The improved performance is attributed to the overlaid 2PACz layer preventing the formation of an intermixed p‐doped PSS− ion rich region (≈5–10 nm) at the bulk heterojunction‐HTL contact interface, resulting in decreased recombination losses and improved stability. Moreover, the 2PACz monolayer is also found to reduce electrical shunts that ultimately yield improved performance in large area devices with PCE enhanced from 12.3% to 13.3% in 1 cm2 cells.

A Novel Approach for Detecting and Analyzing the Shunt Fault in Electrical Power Distribution System (EPDS)

An EPDS is usually an unbalanced framework. It endures power interruption and load variance due to numerous types of faults that cause poor grid stability and PQ in the recent EPDS. For credible electricity supply, efficient and synchronous fault detection and isolation from standard parts are essential. This article suggests a SEPDS approach based on the recognition, categorization, and analysis algorithm (RCAA). That includes µPMU, quick & smart detecting and switching device (SDSD), PDC, and a ZigBee technique, among others, are used to detect, categorization & separate electrical shunt faults. The recommended novel strategy aims to bridge the emphasized gap while investigating the analytical and performance limitations of electrical shunt fault identification, categorization, and analysis. The proposed approach is efficient, reliable, and intelligent in overseeing, regulating, and controlling various problems and challenges while assuring electrical reliability, durability, and consistent flow. The Phasor data concentrator is vital in compiling the recognition and categorization description for detection and organization. Elegant detecting & switching elements deployed in poles apart spots segregated the faulty line from the healthy network and aids in reducing electricity usage. As a result, the SEPDS outperforms the recent OEPDS. Figures and tables indicate the efficacy of the suggested novel approach and model.

Activity disruption causes degeneration of entorhinal neurons in a mouse model of Alzheimer's circuit dysfunction.

Neurodegenerative diseases are characterized by selective vulnerability of distinct cell populations; however, the cause for this specificity remains elusive. Here, we show that entorhinal cortex layer 2 (EC2) neurons are unusually vulnerable to prolonged neuronal inactivity compared with neighboring regions of the temporal lobe, and that reelin + stellate cells connecting EC with the hippocampus are preferentially susceptible within the EC2 population. We demonstrate that neuronal death after silencing can be elicited through multiple independent means of activity inhibition, and that preventing synaptic release, either alone or in combination with electrical shunting, is sufficient to elicit silencing-induced degeneration. Finally, we discovered that degeneration following synaptic silencing is governed by competition between active and inactive cells, which is a circuit refinement process traditionally thought to end early in postnatal life. Our data suggests that the developmental window for wholesale circuit plasticity may extend into adulthood for specific brain regions. We speculate that this sustained potential for remodeling by entorhinal neurons may support lifelong memory but renders them vulnerable to prolonged activity changes in disease.

Design of Backup Protective Hardware for Suspension Clamp of Electric Power Overhead Ground Wire

Aiming at the disconnection problem of power overhead ground wire caused by wind vibration or the action of power frequency short-circuit current, the newly revised “Eighteen major anti-accident measures of State Grid Corporation China” proposes that independent double string structure should be adopted in suspension clamp of overhead ground wire. Based on this, a research scheme of backup protective hardware for the suspension clamp of the overhead ground wire of the power transmission line is proposed. In this scheme, the backup protective hardware for the suspension clamp is designed and added on the premise that the original overhead ground wire-suspension clamp structure is not changed. It provides backup measures for the original suspension clamp and reduces suspension clamp heating by an electrical shunt. Finally, the mechanical failure load test and salt spray test are performed on the designed production. The results show that the designed production meets the standard and could be used in actual engineering. At the same time, the practical engineering application shows that the backup protective hardware can effectively reinforce the ground wire suspension clamp with double strings, avoiding the problem of dropping and breaking after the original clamp is broken.

A Cryogen-Free 25-T REBCO Magnet with the Extreme-No-Insulation Winding Technique.

We present the operation result of a cryogen-free 23.5 T/φ12.5 mm-cold-bore magnet prototype composed of a stack of 12 no-insulation (NI) REBCO single pancake coils-ten middle coils of 6-mm wide and two end coils of 8-mm wide tape-forming 6 double pancake (DP) coils with inner joints. Each coil was wound with the tape having only 1-μm-thick copper layer on each side to overcome the conductor thickness uniformity issue and enhance the mechanical strength within the winding, and then, additional electrical shunting by thin layers of solder was applied on the top and bottom surfaces of each DP coil for effective cooling and quench protection-called extreme-NI winding technique. With this small prototype magnet towards a benchtop 1-GHz NMR, we validate our coil design that include conductor performance, screening-current-induced field and stresses, and conduction-cooling cryogenics. Included in the paper are: 1) conductor issues and our counterproposal in winding; 2) screening-current reduction method; 3) design and manufacture summary of the magnet; and 4) operating test results of the magnet up to 25 Tesla.

Mapping hidden space-charge distributions across crystalline metal oxide/group IV semiconductor interfaces

The electronic structures of semiconducting heterojunctions are critically dependent on composition including the presence and concentrations of dopants, both intended and unintended. Dopant profiles in the interfacial region can have major effects on band energies which in turn drive transport properties. Here we use core-level photoelectron line shapes excited with hard x rays to extract information about electric fields resulting from internal charge transfer in epitaxial ${\mathrm{La}}_{0.03}{\mathrm{Sr}}_{0.97}{\mathrm{Zr}}_{x}{\mathrm{Ti}}_{1\text{--}x}{\mathrm{O}}_{3}/\mathrm{Ge}(001)$ $(0.1\ensuremath{\le}x\ensuremath{\le}0.7)$ heterostructures. Experiments were carried out for heterojunctions involving both $n$- and $p$-type Ge substrates. These heterojunctions were not amenable to electronic characterization of all regions by transport measurements because the doped substrates act as electrical shunts, precluding probing the more resistive films and masking interface conductivity. However, the core-level line shapes were found to be a rich source of information on built-in potentials that exist throughout the heterostructure, and yielded valuable insight into the impact of band bending on band alignment at the buried interfaces. The electronic effects expected for Ge with uniform $n$- and $p$-type doping are eclipsed by those of unintended oxygen dopants in the Ge near the interface. This study illustrates the power of hard x-ray photoemission spectroscopy and related modeling to determine electronic structure in material systems for which insight from traditional transport measurements is limited.

Correlation Between Insulation Resistance and Temperature Measurement Error in Type K and Type N Mineral Insulated, Metal Sheathed Thermocouples

Mineral insulated, metal sheathed (MI) Type K and Type N thermocouples are widely used in industry for process monitoring and control. One factor that limits their accuracy is the dramatic decrease in the insulation resistance at temperatures above about 600 °C which results in temperature measurement errors due to electrical shunting. In this work the insulation resistance of a cohort of representative MI thermocouples was characterised at temperatures up to 1160 °C, with simultaneous measurements of the error in indicated temperature by in situ comparison with a reference Type R thermocouple. Intriguingly, there appears to be a systematic relationship between the insulation resistance and the error in the indicated temperature. At a given temperature, as the insulation resistance decreases, there is a corresponding increasingly negative error in the temperature measurement. Although the measurements have a relatively large uncertainty (up to about 1 °C in temperature error and up to about 10 % in insulation resistance measurement), the trend is apparent at all temperatures above 600 °C, which suggests that it is real. Furthermore, the correlation disappears at temperatures below about 600 °C, which is consistent with the well-established diminution of insulation resistance breakdown effects below that temperature. This raises the intriguing possibility of using the as-new MI thermocouple calibration as an indicator of insulation resistance breakdown: large deviations of the electromotive force (emf) in the negative direction could indicate a correspondingly low insulation resistance.

Optimization of electrical properties for performance analysis of p-Si/n-CdS/ITO heterojunction photovoltaic cell

There is always a photogenerated current in solar photovoltaics because of the movement of charge carriers in the photovoltaic device. Therefore, it is necessary and exciting to explore its electrical properties. Thus, in the present communication, the electrical properties (as electron/hole mobilities, the effect of electron affinity, series/shunt resistance, etc.) have been optimized for p-Si photovoltaic cells with thin n-CdS emitter and ITO window layer. In this context, the signature of charge carrier mobilities on the performance of the proposed configuration, i.e., the hole mobility of the p-Si (p-type Crystalline Silicon) absorber layer and the electron mobility of the n-CdS (n-type Cadmium Sulphide) emitter/buffer layer has been optimized. Under the variation in hole mobility from 50 cm2/Vs to 500 cm2/Vs and the electron mobility from 10 cm2/Vs to 100 cm2/Vs simultaneously, the observed 2D contour plots reveal the effective change in power conversion efficiency from 17.72 % to 18.25 %. Moreover, the effect of electrical parameters, i.e., series and shunt resistance, on the characteristic performance parameters such as power conversion efficiency (η), open-circuit voltage (Voc), short circuit current density (Jsc), and fill factor (FF). An increase in series resistance (0 Ωcm2 to 10 Ωcm2) deteriorates the performance of the proposed solar cell considerably (19.66% to 8.87%). Further, the effect of the electron affinity of the p-Si absorber layer on fill factor and open circuit voltage is observed.