Metal-oxide-semiconductor field-effect transistors (MOSFET) have been for a long time the key elements of modern electronics industry. For the purpose of a permanent integration enhancement, the size of MOSFET has been decreasing exponentially for over decades in compliance with Moore's Law, but nowadays, owing to the intrinsic restrictions, the further scaling of MOSFET devices either encounters fundamental limits or demands for more and more sophisticated and expensive engineering solutions. Alternative approaches and device concepts are currently designed both in order to sustain an increase of the integration degree, and to improve the functionality and performance of electronic devices. Oxide electronics is one of such promising approaches which could enable and accelerate the development of information and computing technology. The behavior of delectrons in transition metal oxides is responsible for the unique properties of these materials, causing strong electronelectron correlations, which play an important role in the mechanism of metal-insulator transition. The Mott transition in vanadium dioxide is specifically the phenomenon that researchers consider as a corner stone of oxide electronics, particularly, in its special direction known as a Motttransition field-effect transistor (MTFET). This review focuses on current research, latest results, urgent problems and nearterm outlook of oxide electronics with special emphasis on the state of the art and recent progress in the field of VO2-based MTFETs. Index Terms — Oxide electronics, Mott transition FET, metal-insulator transition, transition metal oxides, vanadium dioxide. 1 Manuscript received November 25, 2013; accepted December 10, 2013. Date of online publication: December 15, 2013. This work was supported by the Strategic Development Program of Petrozavodsk State University (2012 – 2016), Ministry of Education and Science of Russian Federation “Scientific and Educational Community of Innovation Russia (2009-2013)” Program through contracts no. 14.740.11.0895, no. 14.740.11.0137, no. 14.740.11.1157, no. 16.740.11. 0562, and no. 14.B37.21.0755, as well as “Development of Scientific Potential of High School” Program, contracts no. 2.3282.2011 and no. 2.2774.2011. A. L. Pergament is with the Department of Information Measuring Systems and Physical Electronics, Faculty of Physical Engineering of Petrozavodsk State University, 185910 Petrozavodsk, Russia (e-mail: aperg@psu.karelia.ru). G. B. Stefanovich is with the Department of Information Measuring Systems and Physical Electronics, Faculty of Physical Engineering of Petrozavodsk State University, 185910 Petrozavodsk, Russia (e-mail: gstef@yandex.ru). A. A. Velichko is with the Department of Electronics and Electrical Power Engineering, Faculty of Physical Engineering of Petrozavodsk State University, 185910 Petrozavodsk, Russia (e-mail: velichko@ psu.karelia.ru).
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