Electrical Manipulation Research Articles

Deep Learning Enhanced in Situ Atomic Imaging of Ion Migration at Crystalline-Amorphous Interfaces.

Improving the performance of energy storage, neuromorphic computing, and more applications requires an in-depth understanding of ion transport at interfaces, which are often hindered by facile atomic reconfiguration at working conditions and limited characterization capability. Here, we construct an in situ double-tilt electric manipulator inside an aberration-corrected scanning transmission electron microscope. Coupled with deep learning-based image enhancement, atomic images are enhanced 3-fold compared to traditional methods to observe the potassium ion migration and microstructure evolution at the crystalline-amorphous interface in antimony selenide. Potassium ions form stable anisotropic insertion sites outside the (Sb4Se6) chain, with a few potassium ions present within the moieties. Combined experiments and density functional theory calculations reveal a reaction pathway of forming a novel metastable state during potassium ion insertion, followed by recovery and unexpected chirality changes at the interface upon potassium ion extraction. Our unique methodology paves the way for facilitating the improvement and rational design of nanostructured materials.

Electric Field Manipulation of the Dzyaloshinskii–Moriya Interaction in Hybrid Multiferroic Structures

Electric Field Manipulation of the Dzyaloshinskii–Moriya Interaction in Hybrid Multiferroic Structures

Electrical Control of Valley Polarized Charged Exciton Species in Monolayer WS2.

Excitons are key to the optoelectronic applications of van der Waals semiconductors, with the potential for versatile on-demand tuning of properties. Yet, their electrical manipulation remains challenging due to inherent charge neutrality and the additional loss channels induced by electrical doping. We demonstrate the dynamic electrical control of valley polarization in charged excitonic states of monolayer tungsten disulfide, achieving up to a 6-fold increase in the degree of circular polarization under off-resonant excitation. In contrast to the weak direct tuning of excitons typically observed using electrical gating, the charged exciton photoluminescence remains stable, even with increased scattering from electron doping. By exciting at the exciton resonances, we observed the reproducible nonmonotonic switching of the charged state population as the electron doping is varied under gate bias, indicating a resonant interplay between neutral and charged exciton states.

Picometer-Level In Situ Manipulation of Ferroelectric Polarization in Van der Waals layered InSe.

Ferroelectric 2D van der Waals (vdW) layered materials are attracting increasing attention due to their potential applications in next-generation nanoelectronics and in-memory computing with polarization-dependent functionalities. Despite the critical role of polarization in governing ferroelectricity behaviors, its origin and relation with local structures in 2D vdW layered materials have not been fully elucidated so far. Here, intralayer sliding of approximately six degrees within each quadruple-layer of the prototype 2D vdW ferroelectrics InSe is directly observed and manipulated using sub-angstrom resolution imaging and in situ biasing in an aberration-corrected scanning transmission electron microscope. The in situ electric manipulation further indicates that the reversal of intralayer sliding can be achieved by altering the electric field direction. Density functional theory calculations reveal that the reversible picometer-level intralayer sliding is responsible for switchable out-of-plane polarization. The observation and manipulation of intralayer sliding demonstrate the structural origin of ferroelectricity in InSe and establish a dynamic structural variation model for future investigations on more 2D ferroelectric materials.

Robust adaptive impedance control of coordinated electrically driven robots: An engineering application for the (p,q)-analogue of Bernstein-Stancu operators

Function approximation techniques have emerged as influential mathematical tools for designing compliant motion controllers capable of managing objects using multiple electrical manipulators without the need for exact models. However, their effectiveness often relies on having access to velocity signals, which may not always be practical in real-world situations. This paper introduces an observer-based robust adaptive impedance control strategy that employs the (p,q)-analogue of Bernstein-Stancu operators as uncertainty estimators to tackle uncertainties in collaborative multiple electrical manipulators. This approach leverages visual task-space information and doesn’t depend on velocity feedback, enhancing cost-effectiveness and applicability in practical robotic systems. The lumped uncertainty is first modeled by this operator. The adaptation laws, derived from stability analysis, are then employed to tune its coefficients, which are not presented in the previous literature. By applying the Lyapunov lemma, the paper ensures that error signals in the controlled system are uniformly ultimately bounded (UUB). The suggested controller is evaluated in a system featuring two arms managing a rigid load. Simulation results showcase the effectiveness and versatility of the proposed approach. The outcomes are also compared with two advanced approximation techniques to demonstrate the precision and effectiveness of the suggested controller design.

High switching ratio of antiferromagnetic order in thick sputtered Mn3+xSn1−x films by spin–orbit torque

Electrical manipulation of the antiferromagnetic states of Weyl semimetal Mn3Sn by current-induced spin–orbit torque (SOT) has attracted intensive attention recently, largely due to its potential advantage for high-density integration and ultrafast operation. In this study, the relation between the antiferromagnetic SOT switching ratio and the composition of Mn3+xSn1−x films was explored systematically. While SOT manipulation of ferromagnetic order has traditionally been confined to films just a few nanometers in thickness, our results indicate that current-induced SOT can effectively switch the antiferromagnetic order of sputtered Mn3+xSn1−x films with a thickness of up to 100 nm. Notably, a high electrical switching ratio of 83% was obtained in the optimized film with a composition of Mn3.1Sn0.9. The switching of the octupole polarization in thick Mn3Sn films may be accounted for by a seeded SOT mechanism. Joule heating of the Mn3Sn film close to the Néel temperature plays a key role in this switching process. Additionally, the factors influencing the switching ratio were further investigated. This work will deepen our understanding of the electrical switching mechanism of non-collinear antiferromagnetic order in Mn3Sn film and promote the development of antiferromagnetic spintronic devices.

Combinatory electric-field-guided deposition for spatial microparticles patterning

Spatial deposition and patterning of microparticles are crucial in chemistry, medicine, and biology. Existing technologies like electric force manipulation, despite precise trajectory control, struggle with complex and personalized patterns. Key challenges include adjusting the quantity of particles deposited in different areas and accurately depositing particles in non-continuous patterns. Here, we present a rational process termed combinatory electric-field-guided deposition (CED) for achieving spatially regulated microparticle deposition on insulative substrates. This process involves coating the substrates with insulating materials like PVP and positioning it on a relief-patterned negative electrode. The negative electric field generated by the electrode attracts microparticles, while the positive surface charges on the substrates repel microparticles, resulting in the formation of a potential well over the electrode area. Consequently, this configuration enables precise control over microparticle deposition without the need for direct contact with the substrate's surface, simplifying the process of switching masks to meet varying microparticle deposition requirements. Furthermore, we demonstrate the customization of patterned microparticles on superhydrophobic coatings to regulate cell distribution, as well as the successful loading of drug-laden microparticles onto antibacterial bandages to match the areas of skin lesions. These applications underscore the versatility of CED across chemical, medical, and bioengineering domains.

Nanofluidic sensing inspired by the anomalous water dynamics in electrical angstrom-scale channels

Manipulation of confined water dynamics by voltage keeps great importance for diverse applications. However, limitations on the membrane functions, voltage-control range, and unclear dynamics need to be addressed. Herein, we report an anomalous electrically controlled gating phenomenon on cation-intercalated multi-layer Ti3C2 membranes and reveal the confined water dynamics. The water permeation rate was improved rapidly following the application and rise of voltage and finally reached a maximum rate at 0.9 V. The permeation rate starts to decrease from 0.9 V. Below 0.9 V, the electric field affects the charge and polarity of water molecules and then leads to ordered and denser rearrangement in the two-dimensional (2D) channel to accelerate the permeation rate. Above 0.9 V, with the assistance of metal cations, the surge in current induced aggregation of water molecules into clusters, thereby limiting the water mobility. Based on these findings, a high-performance humidity sensor was developed by simultaneously optimizing the response and recovery speeds through electric manipulation. This work provides flexible strategies in intelligent membrane design and nanofluidic sensing.

Electrical manipulation of the spins in phosphorene double quantum dots

We investigate electric dipole spin resonance (EDSR) induced by an oscillating electric field within a system of double quantum dots formed electrostatically in monolayer phosphorene. Apart from the observed anisotropy of effective masses, phosphorene has been predicted to exhibit anisotropic spin-orbit coupling. Here, we examine a system consisting of two electrons confined in double quantum dots. A single-band effective Hamiltonian together with the configuration interaction theory is implemented to simulate the time evolution of the ground state. We examine spin flips resulting from singlet-triplet transitions driven by external AC electric fields, both near and away from the Pauli blockade regime, revealing fast sub-nanosecond transition times. Furthermore, we analyze the impact of anisotropy by comparing dots arranged along a different crystal axis. The sub-harmonic multi-photon transitions and Landau-Zener-Stückelberg-Majorana transitions are discussed. We show modulation of spin-like and charge-like characteristics of the qubit through potential detuning.

Standardized wireless deep brain stimulation system for mice

Deep brain stimulation (DBS) has emerged as a revolutionary technique for accessing and modulating brain circuits. DBS is used to treat dysfunctional neuronal circuits in neurological and psychiatric disorders. Despite over two decades of clinical application, the fundamental mechanisms underlying DBS are still not well understood. One reason is the complexity of in vivo electrical manipulation of the central nervous system, particularly in rodent models. DBS-devices for freely moving rodents are typically custom-designed and not commercially available, thus making it difficult to perform experimental DBS according to common standards. Addressing these challenges, we have developed a novel wireless microstimulation system for deep brain stimulation (wDBS) tailored for rodents. We demonstrate the efficacy of this device for the restoration of behavioral impairments in hemiparkinsonian mice through unilateral wDBS of the subthalamic nucleus. Moreover, we introduce a standardized and innovative pipeline, integrating machine learning techniques to analyze Parkinson’s disease-like and DBS-induced gait changes.

Voltage control of multiferroic magnon torque for reconfigurable logic-in-memory

Magnons, bosonic quasiparticles carrying angular momentum, can flow through insulators for information transmission with minimal power dissipation. However, it remains challenging to develop a magnon-based logic due to the lack of efficient electrical manipulation of magnon transport. Here we show the electric excitation and control of multiferroic magnon modes in a spin-source/multiferroic/ferromagnet structure. We demonstrate that the ferroelectric polarization can electrically modulate the magnon-mediated spin-orbit torque by controlling the non-collinear antiferromagnetic structure in multiferroic bismuth ferrite thin films with coupled antiferromagnetic and ferroelectric orders. In this multiferroic magnon torque device, magnon information is encoded to ferromagnetic bits by the magnon-mediated spin torque. By manipulating the two coupled non-volatile state variables—ferroelectric polarization and magnetization—we further present reconfigurable logic operations in a single device. Our findings highlight the potential of multiferroics for controlling magnon information transport and offer a pathway towards room-temperature voltage-controlled, low-power, scalable magnonics for in-memory computing.

Asymmetric Manipulation of Perpendicular Exchange Bias and Programmable Spin Logical Cells by Spin-Orbit Torque in a Ferromagnet/Antiferromagnet System.

Antiferromagnets are competitive candidates for the next generation of spintronic devices owing to their superiority in small-scale and low-power-consumption devices. The electrical manipulation of the magnetization and exchange bias (EB) driven by spin-orbit torque (SOT) in ferromagnetic (FM)/antiferromagnetic (AFM) systems has become focused in spintronics. Here, the realization of a large perpendicular EB field in Co/IrMn and the effective manipulation of the magnetic moments of the magnetic Co layer and EB field by SOT in Pt/Co/IrMn system is reported. During the SOT-driven switching process, an asymmetrically manipulated state is observed. Current pulses with the same amplitude but opposite directions induce different magnetization states. Magneto-optical Kerr measurements reveal that this is due to the coexistence of stable and metastable antiferromagnetic domains in the AFM. Exploiting the asymmetric properties of these FM/AFM structures, five spin logic gates, namely AND, OR, NOR, NAND, and NOT, are realized in a single cell via SOT. This study provides an insight into the special ability of SOT on AFMs and also paves an avenue to construct the logic-in-memory and neuromorphic computing cells based on the AFM spintronic system.

Electrically Induced Crystal Field Distortion in a Ferroelectric Perovskite Revealed by Electron Paramagnetic Resonance.

The magnetoelectric material has attracted multidisciplinary interest in the past decade for its potential to accommodate various functions. Especially, the external electric field can drive the quantum behaviors of such materials via the spin-electric coupling effect, with the advantages of high spatial resolution and low energy cost. In this work, the spin-electric coupling effect of Mn2+-doped ferroelectric organic-inorganic hybrid perovskite [(CH3)3NCH2Cl]CdCl3 with a large piezoelectric effect was investigated. The electric field manipulation efficiency for the allowed transitions was determined by the pulsed electron paramagnetic resonance. The orientation-included Hamiltonian of the spin-electric coupling effect was obtained via simulating the angle-dependent electric field modulated continuous-wave electron paramagnetic resonance. The results demonstrate that the applied electric field affects not only the principal values of the zero-field splitting tensor but also its principal axis directions. This work proposes and exemplifies a route to understand the spin-electric coupling effect originating from the crystal field imposed on a spin ion being modified by the applied electric field, which may guide the rational screening and designing of hybrid perovskite ferroelectrics that satisfy the efficiency requirement of electric field manipulation of spins in quantum information applications.

Giant Spin‐Charge Conversion in Ultrathin Films of the MnPtSb Half‐Heusler Compound

AbstractHalf‐metallic half‐Heusler compounds with strong spin‐orbit‐coupling and broken inversion symmetry in their crystal structure are promising materials for generating and absorbing spin‐currents, thus enabling the electric manipulation of magnetization in energy‐efficient spintronic devices. In this work, the spin‐to‐charge conversion in the sputtered half‐Heusler MnPtSb within thickness (t) range from 1 to 6 nm is reported. A combination of X‐ray and transmission electron microscopy measurements evidence the epitaxial nature of these ultrathin non‐centrosymmetric layers, with a clear (111)‐orientation on top of (0001) single‐crystal sapphire. By broadband ferromagnetic resonance (FMR), a four orders of magnitude tunable spin accumulation in the MnPtSb‐based heterostructures, within t = 1–6 nm range, is observed. By using spin pumping FMR, a remarkable t‐dependent spin‐charge conversion in the MnPtSb layers is measured, which clearly demonstrates the interfacial origin of the conversion. When interpreted within the inverse Edelstein effect (IEE), the spin‐charge conversion efficiency extracted at room temperature for the thinnest MnPtSb layer reaches λIEE≈3 nm, representing an extremely high conversion. The still never explored ultrathin regime of the MnPtSb films studied in this work and the discovery of their outstanding functionality are two ingredients that demonstrate the potentiality of such materials for future applications in spintronics.

Towards rapid formation of electroactive biofilm: insights from thermodynamics and electric field manipulation

Electroactive biofilm (EAB) has garnered significant attention due to its effectiveness in pollutant remediation, electricity generation, and chemical synthesis. However, achieving precise control over the rapid formation of EAB presents challenges for the practical implementation of bioelectrochemical technology. In this study, we investigated the regulation of EAB formation by manipulating applied electric potential. We developed a modified XDLVO model for the applied electric field and quantitatively assessed the feasibility of existing rapid formation strategies for EAB. Our results revealed that electrostatic (EL) force significantly influenced EAB formation in the presence of the applied electric field, with the potential difference between the electrode and the microbial solution being the primary determinant of EL force. Compared to -0.2 V and 0 V vs.Ag/AgCl, EAB exhibited the highest electrochemical performance at 0.2 V vs.Ag/AgCl, with a maximum current density of 6.044 ± 0.10 A/m2, surpassing that at -0.2 V vs.Ag/AgCl and 0 V vs.Ag/AgCl by 1.73 times and 1.31 times, respectively. Furthermore, EAB demonstrated the highest biomass accumulation, measuring a thickness of 25 ± 2 μm at 0.2 V vs. Ag/AgCl, representing increases of 1.67 and 1.25 times compared to -0.2 V vs.Ag/AgCl and 0 V vs.Ag/AgCl, respectively. The strong electrostatic attraction under the anodic potential promoted the formation of a monolayer of biofilm. Additionally, the hydrophilicity and hydrophobicity of the biofilm were altered following inversion culture. The Lewis acid-base (AB) attraction offset the electrostatic repulsion caused by negative charges, it is beneficial for the formation of biofilms. This study, for the first time, elucidated the difference in the formation of cathode and anode biofilm from a thermodynamic perspective in the context of electric field introduction, laying the theoretical foundation for the directional regulation of the rapid formation of typical electroactive biofilms.

Electrostatic doping tunable magnetic transition and half-metallicity in the monolayer CrCTe3

The electrical manipulation of the magnetic transition and spin-polarized states has attracted extensive attention in the field of spintronics. In this work, we perform a detailed study on the electronic and magnetic properties of the carrier-doped monolayer CrCTe3 by using first-principles calculation. It is found that, the magnetic transition from Néel-antiferomagnetic (nAFM) to ferromagnetic (FM) is observed in the case of the electron doping, while for hole doping a magnetic transition sequence of nAFM → zigzag-AFM → FM is observed in the monolayer CrCTe3. Interestingly, the carrier doping induced FM ground state always exhibits half-metallicity with full spin polarization. Moreover, the spin polarity of the half-metallic electronic states is opposite for electron and hole doping, meaning that the spin polarization direction can be tuned by manipulating a gate voltage. The Monte Carlo calculations show that the magnetic transition temperature of the doped FM CrCTe3 is rapidly increased with the increasing doping concentration and is extremely expected to achieve room temperature at a suitable doping concentration. These findings demonstrate that the monolayer AFM system possesses a potential application in spintronic devices with electrically tunable spin polarization.

Highly controlled multiplex electrospinning

Applications of electrospinning (ES) range from fabrication of biomedical devices and tissue regeneration scaffolds to light manipulation and energy conversion, and even to deposition of materials that act as growth platforms for nanoscale catalysis. One major limitation to wide adoption of ES is stochastic fiber deposition resulting from the chaotic motion of the polymer stream as is approaches the deposition surface. In the past, fabrication of structures or materials with precisely determined mesoscale morphology has been accomplished through modification of electrode shape, use of multi-dimensional electrodes or pins, deposition onto weaving looms, hand-held electrospinning devices that allow the user to guide deposition, or electric field manipulation by lensing elements or apertures. In this work, we demonstrate an ES system that contains multiple high voltage power supplies that are independently controlled through a control algorithm implemented in LabVIEW. The end result is what we term “multiplex ES” where multiple independently controlled high-voltage signals are combined by the ES fiber to result in unique deposition control. COMSOL Multiphysics® software was used to model the electric field produced in this novel ES system. Using the multi-power supply system, we demonstrate fabrication of woven fiber materials that do not require complex deposition surfaces. Time-varied sinusoidal wave inputs were used to create electrospun torus shapes. The outer diameter of the tori was found, through parametric analysis, to be rather insensitive to frequency used during deposition, while inner diameter was inversely related to frequency, resulting in overall width of the tori increasing with frequency. Multiplex ES has a high-frequency cutoff based on the time response of the high voltage electrical circuit. These time constants were measured and minimized through the addition of parallel resistors that decreased impedance of the system and improved the high-frequency cutoff by up to 63%.

Full electrical manipulation of perpendicular exchange bias in ultrathin antiferromagnetic film with epitaxial strain

Achieving effective manipulation of perpendicular exchange bias effect remains an intricate endeavor, yet it stands a significance for the evolution of ultra-high capacity and energy-efficient magnetic memory and logic devices. A persistent impediment to its practical applications is the reliance on external magnetic fields during the current-induced switching of exchange bias in perpendicularly magnetized structures. This study elucidates the achievement of a full electrical manipulation of the perpendicular exchange bias in the multilayers with an ultrathin antiferromagnetic layer. Owing to the anisotropic epitaxial strain in the 2-nm-thick IrMn3 layer, the considerable exchange bias effect is clearly achieved at room temperature. Concomitantly, a specific global uncompensated magnetization manifests in the IrMn3 layer, facilitating the switching of the irreversible portion of the uncompensated magnetization. Consequently, the perpendicular exchange bias can be manipulated by only applying pulsed current, notably independent of the presence of any external magnetic fields.

Electrical manipulation of telecom color centers in silicon

Silicon color centers have recently emerged as promising candidates for commercial quantum technology, yet their interaction with electric fields has yet to be investigated. In this paper, we demonstrate electrical manipulation of telecom silicon color centers by implementing novel lateral electrical diodes with an integrated G center ensemble in a commercial silicon on insulator wafer. The ensemble optical response is characterized under application of a reverse-biased DC electric field, observing both 100% modulation of fluorescence signal, and wavelength redshift of approximately 1.24 ± 0.08 GHz/V above a threshold voltage. Finally, we use G center fluorescence to directly image the electric field distribution within the devices, obtaining insight into the spatial and voltage-dependent variation of the junction depletion region and the associated mediating effects on the ensemble. Strong correlation between emitter-field coupling and generated photocurrent is observed. Our demonstration enables electrical control and stabilization of semiconductor quantum emitters.

Spin-orbit torque manipulation of sub-terahertz magnons in antiferromagnetic α-Fe2O3

The ability to electrically manipulate antiferromagnetic magnons, essential for extending the operating speed of spintronic devices into the terahertz regime, remains a major challenge. This is because antiferromagnetic magnetism is challenging to perturb using traditional methods such as magnetic fields. Recent developments in spin-orbit torques have opened a possibility of accessing antiferromagnetic magnetic order parameters and controlling terahertz magnons, which has not been experimentally realised yet. Here, we demonstrate the electrical manipulation of sub-terahertz magnons in the α-Fe2O3/Pt antiferromagnetic heterostructure. By applying the spin-orbit torques in the heterostructure, we can modify the magnon dispersion and decrease the magnon frequency in α-Fe2O3, as detected by time-resolved magneto-optical techniques. We have found that optimal tuning occurs when the Néel vector is perpendicular to the injected spin polarisation. Our results represent a significant step towards the development of electrically tunable terahertz spintronic devices.