Electric Hysteresis Research Articles

Exploring dielectric phenomena in sulflower-like nanostructures via Monte Carlo technique

This research focuses on the electric behavior of a mixed ferrielectric sulflower-like nanostructure. The structure includes a core with spin SiZ−1 atoms and a shell with spin σjZ−5/2 atoms. The Blume–Capel model and the Monte Carlo technique (MCt) with the Metropolis algorithm are employed. Diagrams are established for absolute zero, investigating stable spin configurations correlated with various physical parameters. The MCt method explores phase transition behavior and electric hysteresis cycles under different physical parameters.

Ultrahigh Energy Storage Density and Efficiency in Orthorhombic PLZST Antiferroelectric Ceramics via Composition Regulation.

PbZrO3-based antiferroelectric (AFE) ceramic materials have emerged as potential candidates for the next generation of high-energy multilayer ceramic capacitors (MLCCs) because of their distinctive characteristics of double hysteresis loops. The energy storage efficiency of orthorhombic AFE ceramics with ultrahigh storage density is relatively low, which hinders their practical application. In this study, the low efficiency limit of PLZST-based orthorhombic ceramics was overcome by precisely adjusting the Sn4+ content in the (Pb0.95Ca0.02La0.02)(Zr0.99-xSnxTi0.01)O3 AFE ceramics. On one hand, the addition of Sn4+ disrupts the original long-range dipole and improves the rapid response of polarization reversal under the applied voltage. As a result, the difference in electric hysteresis under an electric field is reduced, leading to a significant improvement in energy storage efficiency. On the other hand, increasing the Sn4+ content suppresses the formation of oxygen vacancies, inhibiting grain growth and strengthening grain bonding. This results in ceramics with a high breakdown field strength. Ultimately, the resulting PLCZST ceramics reveal an expressively improved recoverable energy density of 10.2 J cm-3 together with a high energy efficiency of 91.4% under a high applied electric field of 560 kV cm-1. The present study demonstrates the tunability of performance in orthorhombic PLZST AFE ceramics, thereby introducing a ceramic material with exceptional energy storage capabilities for MLCC applications.

Magnetic Properties and Electric Hysteresis in SrFe12O19 Hexaferrites at Low Sintered Temperatures

Magnetic Properties and Electric Hysteresis in SrFe12O19 Hexaferrites at Low Sintered Temperatures

DFT and Monte Carlo simulations of Optical, Structural, electronic and Electrocaloric properties of Ca3Ti2O7 compound

Using the DFT we investigated the optical, structural and electronic properties of Ca3Ti2O7 with the full-potential linearized augmented plane-wave (FP-LAPW) approach with the code “Wien2k”. The lattice constants of Ca3Ti2O7 have been derived by the GGA-PBE approximation. We obtained an indirect energy band gap value of Eg = 1.774 eV between N and Γ points. The thermodynamic properties have also been calculated and debated. In addition, the absorption coefficient, reflectivity, optical conductivity, dielectric function, refractive index and extinction coefficient are achieved. In some cases, the electro-caloric properties of the Ca3Ti2O7 compound have been examined by Monte Carlo simulations. The polarization with different electric field values is also demonstrated. This polarization shows a phase transition from a ferroelectric to a para-electric state close to the Curie temperature TC equal to 1104.001 K. At last, the electric entropy changes of the temperatures have been inferred. To complete this study, we have calculated the relative cooling power (RCP) parameter for the corresponding Ca3Ti2O7 and the electrical hysteresis loops.

Tracking intrinsic ferroelectric switching under electric field via operando second harmonic generation

Polarization hysteresis is the defining characteristic of ferroelectrics, though the measurement of ferroelectric hysteresis is often complicated by artifacts such as leakage current and not all materials with apparent electrical hysteresis are ferroelectric. In this Letter, we have set up an operando second harmonic generation (SHG) system to track intrinsic ferroelectric switches under electric field, which is free from leakage current interference, thus yielding a signature for intrinsic ferroelectricity. Taking representative PbZr0.2Ti0.8O3 (PZT) thin films with different thicknesses as examples, the operando SHG system can capture ferroelectric hysteresis not only for PZT films thicker than 50 nm, for which conventional hysteresis measurement works, but also for PZT film as thin as 26 nm, for which conventional measurement fails due to the presence of large leakage current. Different domain evolution processes in these films are also illustrated.

Monte Carlo Investigation of Dielectric Characteristics in Silicene–Germanene Nanosystem with Junction Connection

In this study, Monte Carlo investigation delves into the dielectric features of silicene–germanene nanosystem with junction connection. We emphasized the profound influence of physical parameters, coupling between Si–Si and Ge–Ge atoms and temperature, on these dielectric features. Our results highlight the pivotal role of the coupling parameter between Ge atoms in influencing blocking temperatures, underlining the significance of high values for spin and coupling parameters for achieving a high blocking temperature and delaying transitions. Furthermore, our analysis of electric hysteresis loops demonstrates their sensitivity to parameter variations, which can offer valuable insights for nanoelectronics and materials science applications.

Monte Carlo study exploring interplays intricate parameter in dielectric behavior of nano-Borophene lattice

This study focuses on the dielectric responses of the [Formula: see text] nano-Borophene lattice, using Monte Carlo simulations. It explores the impact of various parameters, including temperature, the [Formula: see text] coupling interaction, the crystal field D, and the impact of the longitudinal electric field [Formula: see text], on the dielectric characteristics of nano-Borophene. Simulation study results show that these parameters significantly influence the blocking temperature [Formula: see text] and modify the shape and area of the electrical hysteresis cycle. This research can make an important contribution to the understanding of dielectric phenomena, which is essential in fields such as high-temperature dielectric devices and other advanced technological applications.

Toward Energy‐Efficient Ferroelectric Field‐Effect Transistors and Ferroelectric Random Access Memories: Tailoring the Coercive Field of Ferroelectric HfO2 Films

Many modern applications require fast and reliable nonvolatile memory. Ferroelectric (FE) memories, such as FE field‐effect transistors and FE random access memories, show great promise in meeting these requirements. Another key factor is power efficiency. In the case of FE memories, the coercive field is a critical parameter for improving power consumption. This article introduces and reviews four promising methods to tailor the of FE films based on Zr‐doped : 1) composites with various Hf contents, 2) hybrid stacks consisting of antiferroelectric sublayers with excess Zr (x 0.5) and FE sublayers, 3) superlattice structures (also known as nanolaminates) consisting of and sublayers stacked on top of each other, and 4) films doped with an aluminum impurities. Electrical characterization of metal–FE–metal capacitor test structures confirms the suitability of all approaches. Analysis of the strengths and weaknesses is conducted, considering the tuning range, shape stability of the polarization versus electric field hysteresis loop, and the impact of these approaches on the remanent polarization .

Rapid Self-Healing Hydrogel with Ultralow Electrical Hysteresis for Wearable Sensing.

Self-healing hydrogels are in high demand for wearable sensing applications due to their remarkable deformability, high ionic and electrical conductivity, self-adhesiveness to human skin, as well as resilience to both mechanical and electrical damage. However, these hydrogels face challenges such as delayed healing times and unavoidable electrical hysteresis, which limit their practical effectiveness. Here, we introduce a self-healing hydrogel that exhibits exceptionally rapid healing with a recovery time of less than 0.12 s and an ultralow electrical hysteresis of less than 0.64% under cyclic strains of up to 500%. This hydrogel strikes an ideal balance, without notable trade-offs, between properties such as softness, deformability, ionic and electrical conductivity, self-adhesiveness, response and recovery times, durability, overshoot behavior, and resistance to nonaxial deformations such as twisting, bending, and pressing. Owing to this unique combination of features, the hydrogel is highly suitable for long-term, durable use in wearable sensing applications, including monitoring body movements and electrophysiological activities on the skin.

Energy storage and catalytic behaviour of cmWave assisted BZT and flexible electrospun BZT fibers for energy harvesting applications

High-performance lead-free Barium Zirconium Titanate (BZT) based ceramics have emerged as a potential candidate for applications in energy storage, catalysis for electro chemical energy conversion and energy harvesting devices as presented in this work. In the present study hybrid microwave sintered BZT are studied for dielectric, ferroelectric and phase transition properties. BZT ceramic exhibits tetragonal structure as confirmed by the Retvield refinement studies. XPS studies confirms the elemental composition of BZT and presence of Zr. Polarization versus electric field hysteresis loops confirms the ferroelectric behaviour of BZT ceramic. Encouragingly, the BZT showed a moderate energy storage efficiency of 30.7 % and relatively good electro chemical energy conversion (HER). Excellent catalytic activity observed for BZT electrode in acid medium with low Tafel slope 77 mV dec-1. Furthermore, electrospun nanofibers made of PVDF-HFP and BZT are used to make flexible piezoelectric nano generators (PENGs). FTIR studies show that the 16 wt% BZT composite ink exhibits a higher electroactive beta phase. The optimized open-circuit voltage and short circuit current of the flexible PENG exhibits 7Vpp and 750 nA under an applied force of 3N. Thus, flexible and self-powered BZT PENGs are alternative source of energy due to its reliability, affordability and environmental-friendly nature.

High pyroelectric performance and its dependence on the field‐induced orientation in antiferroelectric PLZST system

AbstractIn antiferroelectrics (AFE), the recovery of AFE phase from field‐induced ferroelectric (FEIN) phase occurs at the depolarization temperature, Td. In this study, we report an exceptionally high pyroelectric coefficient, p ≈ 16.00 × 10−2 C/m2 K at ∼70°C in the AFE composition Pb0.982La0.012(Zr0.60Sn0.30Ti0.10)O3 which lies close to FE‐AFE phase boundary. We closely examine this FEIN‐AFE transformation in virgin and poled samples, during heating, by temperature‐dependent X‐ray diffraction, polarization, strain–electric field hysteresis, dielectric and pyroelectric studies and report, for the first time, the mechanism responsible for this behavior.

Electric hysteresis cycles and polarization plateaus in MXene-like lattices: Monte Carlo simulations

This scientific paper presents a comprehensive investigation into the behavior of electric hysteresis cycles and polarization plateaus in the MXene-like system. Utilizing Monte Carlo simulations (MCs), the study explores the effects of ferrielectric and crystal field parameters on these phenomena. The coercive electric field and the surface characteristics of the loops in the electric hysteresis cycles are analyzed, along with the critical and saturation electric fields in the polarization plateaus. The research findings provide insights into the control of the MXene-like system, offering opportunities to optimize MXene materials for diverse applications. The study can contribute to the advancement of MXene research and lays the foundation for future developments in the field.

Effects of interfacial buffering layer on imprint and domain switching dynamics in Pb(Zr,Ti)O3 thin-film heterostructures

Interfacial engineering is important for ferroelectric thin-film heterostructures because of the modulation of boundary conditions of the spontaneous polarizations and their switching behaviors, which are essential for ferroelectric electronics. In this work, we study the effects of interfacial buffering layer, 5-nm-thick SrTiO3 (STO), on the imprint and domain switching of epitaxial Pt/Pb(Zr,Ti)O3/SrRuO3 (SRO) thin-film heterostructures and capacitors. By buffering the ultrathin SrTiO3 layer at the Pb(Zr,Ti)O3 surface, the imprint effect can be dramatically alleviated as observed in the piezoresponse force microscopy (PFM)-measured domain structures and polarization–electric field hysteresis loops in thin-film capacitors. However, when the SrTiO3 layer is buffered at the Pb(Zr,Ti)O3/SrRuO3 interface, the imprint effect is slightly increased. These phenomena are explained based on the band alignments among the Pt and SrRuO3 electrodes and the Pb(Zr,Ti)O3 layer associated with the existence of oxygen vacancies in the SrTiO3 layer. With the reduction of imprint effect, the domain switching dynamics are also improved in the SrTiO3-buffered Pb(Zr,Ti)O3 capacitor, in which the switching activation field is decreased by about 45.3% in comparison with that of the pristine capacitor. These results facilitate the design and optimization of ferroelectric devices with the improvements in domain configurations, switching behaviors and band alignments.

Polarization reversal dynamics of ferroelastic nanodomains in Pb(Zr,Ti)O3 thin film

Applying an electric field along the [001] direction can drive the coupled polarization reversal in [100] oriented ferroelastic nano-sized a-domains in Pb(Zr,Ti)O3 thin film. In this study, experimental probing of nanodomain evolution in ferroelastic Pb(Zr,Ti)O3 thin films using in-situ synchrotron X-ray scattering reveals mechanisms of polarization reversal of both nanosized a-domains as well as that of matrix c-domains. Polarization reversal of a- and matrix c-domains under an electric field along the [001] direction generates the scattering intensity–electric field hysteresis loops. Both time-dependent scattering intensity and phase-field simulation reveal that the polarization reversal of nanodomains can be completed ten times faster than that of matrix c-domain owing to the ferroelastic switching mediated reversal mechanism.

Low hysteresis, water retention, anti-freeze multifunctional hydrogel strain sensor for human-machine interfacing and real-time sign language translation.

Hydrogel strain sensors have received increasing attention due to their potential applications in human-machine interfaces and flexible electronics. However, they usually suffer from both mechanical and electrical hysteresis and poor water retention, which limit their practical applications. To address this challenge, a poly(acrylic acid-co-acrylamide) hydrogel crosslinked by silica nanoparticles is fabricated via photo polymerization and salting-out of hydrophilic ions for the strain sensor. The resulting hydrogel strain sensor possessed low electrical hysteresis (1.6%), low mechanical hysteresis (<7%), high cycle stability (>10 000 cycles), high durability, water retention and anti-freezing ability. Moreover, this strain sensor can be used as a wearable sensor for real-time control of robotic hands and hand gesture recognition. Finally, a sign language translation system has been demonstrated with the aid of machine learning, achieving recognition rates of over 98% for 15 different sign languages. This work offers a promising prospect for human-machine interfaces, smart wearable devices, and the Internet of Things.

Modeling of Electrical Machines Hysteresis Losses Under Mechanical Stresses

Modeling of Electrical Machines Hysteresis Losses Under Mechanical Stresses

Improved energy storage density in La-doped PbZr0.95Ti0.05O3 films with stress regulation

The Pb1–1.5xLaxZr0.95Ti0.05O3 films with different La3+ contents were successfully prepared on the LaNiO3/SiO2/Si substrates by sol-gel method. The effect of La3+ doping on the microstructure, electrical properties, and energy storage performance of the films are systematically investigated. It is found that the introducing of La3+ with a smaller tolerance factor could enhance the lattice distortion and compressive stresses, leading to smaller grain size, slimmer electric hysteresis loops, and lower phase transition field hysteresis. As a result, a relatively high energy storage density of 30.2 J/cm3 together with the energy storage efficiency of 62.2% has been achieved in Pb0.82La0.12Zr0.95Ti0.05 antiferroelectric thin films with the optimum doping content. This improvement is largely attributed to the enhanced breakdown field strength from 1442 kV/cm to 1564 kV/cm as a result of grain size reduction. Our results demonstrate the crucial role of decreased tolerance factor in stabilizing the antiferroelectric phase and enhancing the phase transition electric field, and provide an effective route to enhance the energy storage performance of antiferroelectric thin films.

High, Multiple, and Nonvolatile Polarizations in Organic-Inorganic Hybrid [(CH3)3(CH2CH2Cl)N]2InCl5·H2O for Memcapacitor.

Dielectrics with high, nonvolatile, and multiple polarizations are required for fabricating memcapacitors that enable high parallelism and low energy consumption in artificial neuromorphic computing systems as artificial synapses. Conventional ferroelectric materials based on displacive and order-disorder types generally have difficulty meeting these requirements due to their low polarization values (∼150 μC/cm2) and persistent electrical hysteresis loops. In this study, we report a novel organic-inorganic hybrid (CETM)2InCl5·H2O (CETM = (CH3)3(CH2CH2Cl)N) exhibiting an intriguing polarization vs electric field (charge vs voltage) "hysteresis loop" and a record-high nonvolatile polarization over 30 000 μC/cm2 at room temperature. The polarization is highly dependent on the period and amplitude of the ac voltage, showing multiple nonvolatile states. Electrochemical impedance spectroscopy, time-dependent current behavior, disparate resistor response in the dehydrated derivative (CETM)2InCl5, and the negative temperature dependence of ionic conductance support that the memcapacitor behavior of (CETM)2InCl5·H2O stems from irreversible long-range migration of protons. First-principles calculations further confirm this and clarify the microscale mechanism of anisotropic polarization response. Our findings may open up a new avenue for developing memcapacitors by harnessing the benefits of ion migration in organic-inorganic hybrids.

3D dual network effect of alkalinized MXene and hBN in PVA for wearable strain/pressure sensor applications

Next-generation wearable electronic devices rely on electronic skin for its high flexibility, wearability, and ability to monitor vital health signs. Despite these advantages, developing flexible strain sensors for full-range human activity detection remains challenging. A solution involves thread-based motion sensors seamlessly integrated into clothing. This study employs a synergistic dual three-dimensional network using hydroxyl-functionalized MXene (MXOH) and hexagonal boron nitride (hBN) to modify poly(vinyl alcohol) (PVA) hydrogels, showcasing promising advancements in wearable technology. The hydrogel, incorporating MXOH with its larger lateral size and hBN with its smaller lateral size, forms a robust 3D network that reinforces the percolation network of MXOH nanosheets. This strategic combination ensures stability in the conductive pathway, minimizing electrical hysteresis during mechanical stress. The completion of the 3D network in PVA, facilitated by hBN, significantly enhances electrical conductivity due to the ion conduction properties of hBN. Moreover, the incorporation of non-conductive hBN nanosheets amplifies overall conductivity compared to MXOH alone, contributing to network stability. Rheological tests demonstrate the pronounced impact of increasing hBN weight percentage on the storage modulus, indicating the formation of a 3D network upon percolation. Additionally, MXOH and hBN exhibit self-healing characteristics through hydrogen bonding with the PVA chain, with hBN displaying higher mobility and faster self-healing compared to MXOH. These hydrogel-based flexible sensors exhibit mechanical stability and responsiveness across a wide pressure range (0 to 80 kPa) and find versatile applications in touch screens, thread-based motion sensors, and wearable electronics, promising transformative advances in handwriting-to-digital translation and smart textile technologies.

Вплив температурноспричинених змін будови розплаву системи Al–Si на структуру і електричний опір сплаву в твердому стані

According to the results of previous studies, it was found that the temperature dependence of electrical resistance during heating of the Al + 17,6 % Si melt curve characterized by presence of several sharp inflections. This gave grounds for asserting possibility of temperature-induced changes in structure of specified system melts. However, it remains an open question whether the changes that occurred when melt was overheated are preserved during subsequent cooling. The problem of effect of temperature-induced changes in Al–Si melts structure on the structure and properties of the alloy in the solid state also requires a more detailed study. Resistometric studies of melt were carried out according to the method [1]. The ability to preserve temperature-induced changes in melt was assessed by electrical resistance value during cooling of the overheated Al + 17,6 % Si melt at five characteristic temperature values. To avoid errors cozied by imbalance, only results obtained after stabilization of melt resistance at a given temperature were taken into account. Temperature-induced changes in melt structure were evaluated by structure of solid samples obtained by quenching from the liquid state. The nature of influence of changes that occur when the melt is overheated on solid alloy structure and properties was determined by specific electrical resistance values and material microstructures of samples obtained after melt isothermal holding at temperatures of 720 °C, 880 °C, 960 °C and 1050 °C. The presence of electric resistance significant hysteresis can indicate that the changes that occurred during melt overheating are preserved during its cooling. It was also established that the specified changes affect to properties (in particular, specific electrical resistance) and the microstructure of the solid alloy (first of all, the melt overheating affects to size of primary silicon particles). Keywords: aluminum, silicon, thermodynamic equilibrium, melts, electrical resistance.