Dielectric materials are utilized throughout semiconductor microelectronic devices for a variety of applications ranging from passive electrical isolation and charge storage to more functional etch stopping and diffusion barriers and more active layers such as humidity sensing and solid state electrolyte materials. Just in the past two decades alone, the semiconductor industry has researched and adopted a vast array of new dielectric materials with exceptionally high or low values of dielectric permittivity (k). While scaling of these so called high-k and low-k dielectrics may have reached their limits, numerous additional applications for dielectric materials continue to emerge as the industry seeks to adopt new methods for patterning nanoscale features and considers a dizzying array of beyond CMOS devices. In this talk, I will discuss my colorful adventures over these past two decades as a dielectric materials scientist starting with molecular beam and atomic layer epitaxy of III-N nitrides to plasma enhanced chemical vapor deposition of low-k dielectrics and back to atomic layer deposition of high-k dielectrics (various misadventures in between will also not be neglected!). It has been an exciting journey and I will use it to highlight the multi-disciplinary nature of dielectric science as well as illustrate how something that was once old can be reimagined to fulfill the needs of future beyond CMOS devices. I will further address some of the future challenges and opportunities presented for dielectric materials that have been created by the new patterning methods and beyond CMOS devices now under consideration. We will conclude by reviewing the unique obstacles that dielectric materials present for the realization of advanced cryogenic quantum computing architectures and the necessary associated research vectors to prevent dielectrics from becoming quantum computing’s Achilles heel.