Electrical Characteristics Research Articles

Investigating structural, dielectric, and electrical characteristics of sol–gel synthesized perovskite ceramic Bi0.7Ba0.3(FeTi)0.5O3

Investigating structural, dielectric, and electrical characteristics of sol–gel synthesized perovskite ceramic Bi0.7Ba0.3(FeTi)0.5O3

Impact of TBAI Doping on the Optical and Dielectric Features of PVC/MoO3/NiMoO4/PANI Polymer Composite for Optoelectronic and Energy Storage Applications

Abstract Poly (vinyl chloride, PVC)/MoO3/NiMoO4/polyaniline (PANI)/x wt % tetrabutylammonium iodide (TBAI) polymers were formed using casting and hydrothermal methods. The present study examined the nanocomposites' structural, electrical, and optical features comprising PVC/MoO3/NiMoO4/PANI/x wt %TBAI polymers. X-ray diffraction and scanning electron microscopy were used to investigate the structure and morphology of different samples. The influence of different amounts of TBAI on the linear and nonlinear optical features of PVC/MoO3/NiMoO4/PANI/x wt %TBAI polymers was explored. Adding MoO3/NiMoO4/PANI.TBAI reduced the direct and indirect optical band gaps to their minimum values (3.88, 3.04) eV and (3.58, 2.13) eV, respectively. Doped polymer with MoO3/NiMoO4 has the highest refractive index value. Only PVC filled with MoO3/NiMoO4 exhibits the highest non-linear optical parameters within the visible range. The fluorescence intensity and emitted colors influenced by the kind of dopant. The dielectric constant and ac conductivity values of the host polymer were affected by the amount of TBAI. The maximum energy density value was observed in PVC/MoO3/NiMoO4/PANI/10 wt %TBAI polymer. The Cole-Cole plot demonstrated an irregular shift for doped samples relative to the undoped. The obtained results nominated the nanocomposite films of PVC/MoO3/NiMoO4/PANI/x wt %TBAI to be used in diverse electric and optoelectrical applications.

Comprehensive Study on the Electrical Characteristics and Full-Spectrum Tracing of Water Sources in Water-Rich Coal Mines

Comprehensive Study on the Electrical Characteristics and Full-Spectrum Tracing of Water Sources in Water-Rich Coal Mines

Investigation of thermally induced surface composition and morphology variation of magnetron sputtered Sb2Se3 absorber layer for thin film solar cells

One of the most promising semiconductor materials for the development of sustainable thin-film solar cell technology is antimony selenide (Sb2Se3). Its excellent optical and electrical properties have drawn attention lately for potential application in thin-film solar cells. In this study, Sb2Se3 films deposited using the direct current (DC) magnetron sputtering technique have been subjected to a post-annealing process without an extra selenium supply at temperatures between 150 and 450 °C. Without an extra selenium supply, the impact of post-annealing temperature on the surface composition as well as the physical properties of the fabricated films was investigated. The overall evaluations revealed that the post-annealing temperature is highly efficient in altering the physical properties of the Sb2Se3 absorber thin films. We further observed that the post-annealing process improved the crystallization and the heat treatment temperature quite affected preferential orientation. The surface morphology of films exhibited structural deformation at high post-annealing temperatures (> 350 °C). According to optical and electrical characterizations, respectively, the optical energy gap and the resistivity of Sb2Se3 films reduced with an increment in the post-annealing temperature. Based on the XPS result, the variation in temperature of post-annealing led to a change in the surface composition of the films. The findings on the growth of Sb2Se3 thin films indicate the existence of an intermediate growth temperature that permits the growth of Sb2Se3 films to be optimized. The study’s conclusions can serve as a guide to the growth of Sb2Se3 thin films with the desired crystallinity, surface morphology, and composition for thin film solar cell applications.

Optimizing Optoelectronics Performance: Theoretical and Experimental study on ZnO Thin Film for Al/ZnO/p-Si Photodiode

Abstract In this study investigates the optimization of ZnO thin film photoelectric devices, specifically focusing on ZnO/p-Si heterojunction photosensitive devices and photodiodes (PDs) using Al contacts. Through an experimental and theoretical analysis approach aims to evaluate the effects of important parameters, including ZnO layer thickness, defect density, and contact materials, on PD’s efficiency. Numerical analysis simulations comparatively examine the experimentally fabricated device performance at a 5 nm ZnO layer thickness by balancing photon absorption and carrier formation while minimizing carrier transport limitations. Experimentally process, an Atomic Layer Deposition (ALD) system was used to grow ZnO interlayers on one side of the polished Si wafer. Then, Al metallic contacts were created on the ZnO layers using a hole array mask. The PDs were then subjected to electrical characterization using I-V and I-t measurements under various illumination densities. Al/ZnO/p-Si PD's device with active performance has been produced and analyzed with electrical parameters such as barrier height, photocurrent, spectral response, ideality factor and EQE were derived, analyzed and studied. In conclusion, this work provides a comprehensive understanding of the performance of Al/ZnO/p-Si PD at varying illumination intensities and offering a detailed analysis of key parameters influencing device efficiency for future optoelectronics applications.

Development and Test of Low-Cost Multi-Channel Multi-Frequency Lock-In Amplifier for Health and Environment Sensing

Optical-based sensing techniques and instruments, such as fluorometric systems, absorbance-based sensors, and photoacoustic spectrometers, are important tools for detecting food fraud, adulteration, and contamination for health and environmental purposes. All the aforementioned optical equipments generally require one or more low-frequency Lock-In Amplifiers (LIAs) to extract the signal of interest from background noise. In the cited applications, the required LIA frequency is quite low (up to 1 kHz), and this leads to a simplification of the hardware with consequent good results in portability, reduced size, weight, and low-cost characteristics. The present system, called ENEA DSP Box Due, is based on a very inexpensive microcontroller proto-board and can replace four commercial LIAs, resulting in significant savings in both cost and space. Furthermore, it incorporates a dual-channel oscilloscope and a sinusoidal function generator. This article outlines the architecture of the ENEA DSP Box Due, its electrical characterization, and its applications within a project concerning laser techniques for food and water safety.

Electrical surface breakdown characteristics of micro- and nano-Al2O3 particle co-doped epoxy composites

Abstract Epoxy microcomposites are basic materials for gas-insulated switchgear (GIS) spacers that are subjected to huge electrical stress. Previous works have indicated that nanoparticles are beneficial to dielectric performance. However, surface electrical breakdown, a typical fault in GIS of co-doped micro- and nanoparticles in epoxy composites, is seldom studied. In this work, numerous concentrations of micro- and nano-Al2O3 are co-doped into an epoxy matrix; the surface traps, surface charging, and surface breakdown voltages (V sb) of the co-doped composites are studied, and the influence of micro- and nano-Al2O3 on the electrical surface breakdown is clarified. The results show that V sb first decreases and then increases with the microparticles, and V sb decreases from 25.34 kV to 19.52 kV. As the number of nanoparticles increases, V sb increases and then decreases when the microparticle loading is low, but decreases and then increases when the microparticle loading exceeds 40 wt%. Micro-Al2O3 particles introduce surface shallow traps into epoxy composites, while small amounts of nano-Al2O3 introduce deep traps. Two different mechanisms dominate the surface charging and V sb of epoxy micro-nanocomposites. When the surface conductivity is lower than 7 × 10−14 S, the surface charges are reduced by the suppression of electrode injection as the trap depth increases, and V sb increases. When the surface conductivity exceeds 7 × 10−14 S, the surface charge dissipation rate increases with the surface conductivity and V sb increases as the surface conductivity increases. Our work indicates that co-doped micro- and nano-particles should keep the surface conductivity away from the specic value (7 × 10−14 S) to safeguard insulation properties for GIS spacers.

A position-free control strategy in the full speed domain based on an electro-hydraulic pump

The electric plunger hydraulic pump plays a crucial role in hydraulic transmission technology by integrating an electric motor and a hydraulic pump. The main objectives in designing such devices are to improve efficiency, achieve miniaturization, and promote environmental sustainability. This paper introduces a speed control strategy for an electric hydraulic pump that operates across its entire speed range without relying on position sensor feedback. We begin by establishing the overall model of the electric hydraulic pump and motor characteristics under different operating conditions. Next, we employ a high-frequency injection control method to enable the electric hydraulic pump to start at zero-speed or low-speed states. Additionally, the optimized extended Kalman filtering control method enhances the robustness and tracking performance of the electric hydraulic pump in the medium to high-speed range. Finally, considering the motor characteristics under different operating conditions, we achieve sensorless control of the electric hydraulic pump across the full speed range. Our proposed control strategy provides a promising solution for the control of electric plunger hydraulic pumps, with widespread industrial applications.

Radiation Hardness and Defects Activity in PEA2PbBr4 Single Crystals

AbstractMetal halide perovskites (MHPs) are low‐temperature processable hybrid semiconductor materials with exceptional performances that are revolutionizing the field of optoelectronic devices. Despite their great potential, commercial deployment is hindered by MHPs lack of stability and durability, mainly attributed to ion migration and chemical interactions with the electrodes. To address these issues, 2D layered MHPs are investigated as possible device interlayers or active material substitutes. Here, the 2D perovskite (PEA)2PbBr4 is considered that is recently discussed as promising candidate for X‐ray direct detection. While the increased resilience of (PEA)2PbBr4 radiation detectors has already been reported, the physical mechanisms responsible for such improvement compared to 3D perovskites are not still fully understood. To unravel the charge transport process in (PEA)2PbBr4 crystals thought to underly the device better performance, an investigation technique is adapted previously used on highly resistive inorganic semiconductors, called photo induced current transient spectroscopy (PICTS). It is demonstrated that PICTS can reliably detect three trap states (T1, T2, and T3), and that their evolution upon X‐ray exposure can explain (PEA)2PbBr4 superior radiation tolerance and reduced aging effects. Overall, the results provide essential insights into the electrical characteristics of 2D perovskites and their potential application as reliable direct X‐ray detectors.

The electrical characterization of V2O5/p-Si prepared by spray pyrolysis technique using perfume atomizer

The electrical characterization of V2O5/p-Si prepared by spray pyrolysis technique using perfume atomizer

Design and numerical investigation of Cs2SnI6 vacancy-ordered double perovskite solar cell

Perovskite solar cells (PSCs) represent an emerging technology in solar photovoltaics due to their outstanding optical and electrical characteristics. The urgency of lead-free solar materials has increased due to the environmental concerns. In light of these considerations, Cs2SnI6, a high-performance tin-based double perovskite, holds the potential to be a key absorber material in promoting the cell efficiency. In this paper, a device design of lead-free Cs2SnI6-based PSC is proposed based on an n-i-p planar structure. Through a comprehensive analysis by simulation using SCAPS-1D, the impacts of electron transport layer materials (SnO2, TiO2, CdS, GO, MZO) and hole transport layer materials (MoO3, Cu2O, CuI, Spiro-OMeTAD) with varying thicknesses as well as the donor density, acceptor density and the absorber thickness have been examined. Additionally, an examination is conducted on the performance metrics of PSCs, encompassing Voc, Jsc, FF, and PCE, while taking into consideration the influences of temperature, Rseries, and Rshunt. The results show that the optimized FTO/SnO2/Cs2SnI6/MoO3/Au device presents the highest PCE of 22.60 % at 300 K temperature, together with a visible quantum efficiency of 99.49 %. The appropriate thicknesses of the ETL, HTL, and absorber layer for achieving the optimal performances are 50 nm, 200 nm, and 450 nm, respectively. Also, the donor density and acceptor density for the best efficiency are both at 1018 cm−3. The values of Rseries, and Rshunt are 2 Ω cm2 and 6000 Ω cm2, respectively. This investigation demonstrates that the proposed vacancy-ordered double perovskite Cs2SnI6 solar cell is promising for photovoltaic devices due to the highlighted characteristics and optical parameters.

Robust Optimization Research of Cyber–Physical Power System Considering Wind Power Uncertainty and Coupled Relationship

To mitigate the impact of wind power uncertainty and power–communication coupling on the robustness of a new power system, a bi-level mixed-integer robust optimization strategy is proposed. Firstly, a coupled network model is constructed based on complex network theory, taking into account the coupled relationship of energy supply and control dependencies between the power and communication networks. Next, a bi-level mixed-integer robust optimization model is developed to improve power system resilience, incorporating constraints related to the coupling strength, electrical characteristics, and traffic characteristics of the information network. The upper-level model seeks to minimize load shedding by optimizing DC power flow using fuzzy chance constraints, thereby reducing the risk of power imbalances caused by random fluctuations in wind power generation. Furthermore, the deterministic power balance constraints are relaxed into inequality constraints that account for wind power forecasting errors through fuzzy variables. The lower-level model focuses on minimizing traffic load shedding by establishing a topology–function-constrained information network traffic model based on the maximum flow principle in graph theory, thereby improving the efficiency of network flow transmission. Finally, a modified IEEE 39-bus test system with intermittent wind power is used as a case study. Random attack simulations demonstrate that, under the highest link failure rate and wind power penetration, Model 2 outperforms Model 1 by reducing the load loss ratio by 23.6% and improving the node survival ratio by 5.3%.

Thin Conducting Films: Preparation Methods, Optical and Electrical Properties, and Emerging Trends, Challenges, and Opportunities

Thin conducting films are distinct from bulk materials and have become prevalent over the past decades as they possess unique physical, electrical, optical, and mechanical characteristics. Comprehending these essential properties for developing novel materials with tailored features for various applications is very important. Research on these conductive thin films provides us insights into the fundamental principles, behavior at different dimensions, interface phenomena, etc. This study comprehensively analyzes the intricacies of numerous commonly used thin conducting films, covering from the fundamentals to their advanced preparation methods. Moreover, the article discusses the impact of different parameters on those thin conducting films’ electronic and optical properties. Finally, the recent future trends along with challenges are also highlighted to address the direction the field is heading towards. It is imperative to review the study to gain insight into the future development and advancing materials science, thus extending innovation and addressing vital challenges in diverse technological domains.

Performance Recovery of p‐GaN Etch‐Induced Degradation via Atomic Layer Deposition In Situ N2 Plasma and Postanneal‐Assisted Passivation

The etching of p‐GaN requires extremely strict control over etching depth and morphology; otherwise, it will result in poor electrical characteristics. This work uses ALD(Atomic layer deposition) in situ N2 plasma and postanneal‐assisted passivation to effectively recover the electrical properties degraded by p‐GaN etching. Compared to unpassivated devices, this approach eliminates surface oxygen bonds, recovering drain current from 10 to 126 mA mm−1, reducing gate leakage by an order of magnitude, achieving an ON/OFF current ratio exceeding 108, a breakdown voltage of 930 V at 1 μA mm−1, and effectively suppressing current collapse.

Enhanced Performance and Stability of Perovskite Solar Cells Through Surface Modification with Benzocaine Hydrochloride.

Current development of inverted p-i-n perovskite solar cells (PSCs), with nickel oxide as the hole transport layer, is progressing toward lower net costs, higher efficiencies, and superior stabilities. Unfortunately, the high density of defect-based traps on the surface of perovskite films significantly limits the photoelectric conversion efficiency and operational stability of perovskite solar cells. Finding cost-effective interface modifiers is crucial for the further commercial development of p-i-n PSCs. In the present work, we report a passivation strategy using a multifunctional molecule, benzocaine hydrochloride (BHC), which is shown to reduce defect density and enhance the photovoltaic performance and stability of the resultant p-i-n PSCs. It has been revealed that BHC strongly interacts with perovskite precursor components and triggers the evolution of the perovskite absorber film morphology and enables improved surface energy level alignment, thus promoting charge carrier transport and extraction. These properties are beneficial for improving open-circuit voltage (VOC) and fill factor (FF). Our results show that the photoelectric conversion efficiency (PCE) of p-i-n PSCs with nickel oxide as the hole transport layer increased from an initial 20.0% to 22.1% after being passivated with BHC, and these passivated devices also exhibited improved stability. DFT calculations reveal the unusual ability of the BHC passivant to improve band alignment while also preventing the accumulation of holes at the interface. In this work, the advantages of BHC passivation are demonstrated by linking theoretical calculations with optical and electrical characterizations.

Carrier modulation and effective passivation of tin oxide thin-film transistors by organic surface doping

Doping is a useful technique for metal oxide thin-film transistors (TFTs) to adjust the threshold voltage and charge carrier density. However, a notable drawback is the disruption of the microstructure caused by doping crystalline lattice, leading to a partial decrease in charge carrier mobility. In this work, we suggest a surface doping technique that modifies the carrier concentration and passivates the device surface while preserving the channel layer lattice structure through the use of organic dopant molecules. It is shown that tin oxide (SnO2) TFTs doped in this manner typically exhibit improved electrical characteristics, particularly greater mobility and a noticeably lower threshold voltage, without negatively affecting the devices on/off current ratio. Furthermore, compared to pristine devices, bias stress stability and long-term durability are also enhanced. These findings suggest that surface doping may find use in high-performance oxide semiconductor devices and circuits.

Boosting Efficiency in Dual-Absorber RbPbBr3 Perovskite Solar Cell: The Role of Two-Dimensional GeS and SnS2 as Electron Transport Layers

Abstract This paper presents a comprehensive investigation into the electrical characteristics of a perovskite solar cell. The n-i-p cell is based on a low band gap rubidium–lead-bromide (RbPbBr3) perovskite with an energy level of 1.31eV. The study also evaluates the impact of high mobility two-dimensional GeS and SnS2 as electron transport layers (ETLs) on the cell's performance. These ETLs have a wide band gap and provide a hole blocking layer due to their high valence band-offset. Additionally, a thin film MoTe2 with a band gap of 1eV is considered as a complementary absorber for capturing near-infrared solar spectrum. The investigation focuses on the influence of critical physical and structural design parameters on the electrical parameters of the cell. The optimized device with SnS2 as the ETL exhibits a power conversion efficiency (PCE) of 25.03%, an open circuit voltage of 0.95 V, a short circuit current density of 33 mA/cm2, and a fill factor of 80.31%. Similarly, the device with GeS as the ETL achieves a PCE of 25.14%, an open circuit voltage of 0.96 V, a short circuit current density of 33.01 mA/cm2, and a fill factor of 80.66%. Furthermore, a statistical analysis is conducted by calculating the coefficient of variation to assess the sensitivity of the cell’s electrical measures to the variation of design parameters and operating temperature. The results highlight that defects in the absorber layer, work function of the back contact, and ambient temperature are critical design parameters that can significantly impact the device performance. Overall, the utilization of high mobility wide band gap ETLs, in combination with the low band gap perovskite, offers a promising approach for the design of high-performance solar cells.

Electrical impedance characterization and modelling of Ti-Β implants.

Commercially pure titanium (c.p. Ti) and Ti6Al4V alloys are the most widely used metallic biomaterials in the biomedical sector. However, their high rigidity and the controversial toxicity of their alloying elements often compromise their clinical success. The use of porous β-Titanium alloys is proposed as a solution to these issues. In this regard, it is necessary to implement economic, repetitive, and non-destructive measurement techniques that allow for the semi-quantitative evaluation of the chemical nature of the implant, its microstructural characteristics, and/or surface changes. This study proposes the use of simple measurement protocols based on electrical impedance measurements, correlating them with the porosity inherent to processing conditions (pressure and temperature), as well as the chemical composition of the implant. Results revealed a clear direct relationship between porosity and electrical impedance. The percentage and/or size of the porosity decrease with an increase in compaction pressure and temperature. Moreover, there is a notable influence of the frequency used in the measurements obtained. Additionally, the sensitivity of this measurement technique has enabled the evaluation of differences in chemical composition and the detection of intermetallics in the implants. For the first time in the literature, this research establishes relationships between stiffness and electrical impedance, using approximations and models for the observed trends. All the results obtained corroborate the appropriateness of the technique to achieve the real-time characterization of Titanium implants, in an efficient and non-invasive way.

The increase of the scattering at high electric fields in multilayer ReS2 FETs: Output characteristics and 1/f noise

Field-effect transistors (FETs) employing two-dimensional (2D) materials have attracted significant attention as a potential alternative to silicon FETs. Among these materials, multilayer rhenium disulfide (ReS2) has emerged as a focal point of interest owing to its distinctive direct bandgap properties. While there is extensive research on the electrical characteristics and doping, studies on the changes in electrical properties during scale-down for practical applications are insufficient. In this study, we investigated the mobility reduction of ReS2 FETs at high drain bias of ReS2 FETs by comparing the different channel lengths of 0.24 μm and 1.5 μm. A reduction in mobility was observed for the shorter channel length, attributed to the enhanced scattering factor at high electric field. To assess the impact of scattering degradation, we conducted a low-frequency noise analysis at drain-source voltage (VDS) = 0.4 V and VDS = 3.0 V for the 0.24 μm length FET. The decrease of the Hooge parameter (αH) at high VDS was observed, which was attributed to an augmentation in Coulomb scattering. This study observed mobility degradation under high electrical fields during scale-down and identified the cause of mobility degradation through low-frequency noise analysis. This contributes to scaling down for practical applications of 2D FETs.

Features of the structure and resistive switching of titanium oxide films on Y-cut piezoelectric substrate of a LiNbO3 crystal

The difference in the structure of titanium oxide thin films deposited on fused silica substrates and the Y-cut of a lithium niobate crystal is demonstrated. In both cases, the film is amorphous; however, an insignificant amount of rutile crystallites is observed in the film formed on the Y-cut of the lithium niobate crystal. It is shown that the electrical characteristics of the films depend not only on the material of the substrate, but, in the case of the lithium niobate substrate, also on the direction of an electric field. This is caused by the deformation of the substrate due to the inverse piezoelectric effect.