Electrical Characteristics Of MOSFETs Research Articles

Electrical characteristics of MOSFETs using low-pressure chemical-vapor-deposited oxide

The electrical characteristics of MOSFETs and MOS capacitors utilizing thin (80-230 AA) low-pressure chemical-vapor-deposited (LPCVD) oxide films deposited at 12 AA/min are presented. MOSFETs using CVD oxides show good electrical characteristics with 70-90% of the surface mobility of conventional MOSFETs. The CVD oxides exhibit the same low leakage current and high breakdown fields as the thermal oxides, and significantly lower trapping and trap generation rates than thermally grown oxides. Interface state densities of <or=3*10/sup 10/ cm/sup -2/ eV/sup -1/ are obtained from CVD devices by using a short annealing in oxygen ambient following the deposition. These results indicate that these LPCVD oxide films may be promising dielectrics for MOS device application.<<ETX>>

Electrical characteristics of MOSFET's utilizing Oxygen—Argon sputter-deposited gate Oxide films

This paper presents a detailed look at the electrical characteristics of MOSFET's utilizing oxygen-argon sputter-deposited gate-oxide films for low-temperature MOSFET fabrication. The gate-oxide films are deposited at low temperature (200°C) by oxygen-argon sputtering of an SiO 2 target. The MOSFET's so formed are confirmed to have triode characteristics. Moreover, oxygen mixing makes it possible to considerably improve the MOSFET field-effect mobility and subthreshold slope over those of argon-only sputter-deposited film to 700 cm2/V's and 170 mV/decade. These improvements are found to be caused by the remarkable reduction in surface-state density. These results confirm the usefulness of oxygen-argon sputter-deposited gate-oxide films for MOSFET fabrication at low temperature.

A Simple Model for Separating Interface and Oxide Charge Effects in MOS Device Characteristics

A simple model to describe radiation effects on MOSFET electrical characteristics is presented. The key assumption is that mobility degradation in an enhancement mode MOSFET is predominantly due to charged interface traps. Model predictions are compared with measured values of interface trap density and device I - V curves.