Electrical Properties Of Films Research Articles

Thorough investigation of the optical, electrical and thermal properties of Cu3Se2 thin film deposited by chemical bath deposition

Recently, metal chalcogenide thin films have gained utmost significance across various industries attributed to their exceptional versatility and efficiency in advancing future electronics, optoelectronics and energy conversion devices. In this work, the formation of a copper selenide (Cu3Se2) thin film is accomplished through the utilization of chemical bath deposition approach. The energy dispersive analysis of X-ray and X-ray photoelectron spectroscopy confirmed the chemical composition stoichiometry for the as-deposited Cu3Se2 thin film. X-ray diffraction analysis conclusively validates the tetragonal unit cell structure. The homogenous and crack-free film deposition is verified employing optical microscopy, scanning electron microscopy, and atomic force microscopy analysis. The crystalline character of the thin film is ascertained by the evident appearance of lattice fringe patterns in high-resolution transmission electron microscopy along with the distinctive spot patterns perceived in the selected area electron diffraction pattern. The optical reflectance spectrum revealed a direct bandgap of 1.77 eV. The Raman spectrum exhibited a solitary peak at 259 cm−1 that corresponds to the Ag1 vibrational mode of the Cu-Se phase. The comprehensive electrical transport property for the as-deposited thin film is accomplished through the control assessment of temperature-dependent d.c. electrical resistivity and photoresponse current-voltage profiles. The investigation of the thermal decomposition of the Cu3Se2 thin film is conducted via thermogravimetry, utilizing the non-mechanistic Kissinger method to extract kinetic parameters from the thermal dataset. The acquired outcomes are thoroughly examined in this manuscript.

Effect of annealing and roughness on the magnetic-optical, adhesive, nano-mechanical, and electrical properties of Co60Fe20Dy20 films

The structural, magnetic, optical, and adhesion properties of Cobalt-Iron-Dysprosium (CoFeDy) films were investigated in this study. Glass substrates were coated with a Co60Fe20Dy20 alloy via sputtering, with a thickness ranging from 10 nm to 50 nm. Subsequently, the films underwent annealing at temperatures of 100 °C, 200 °C, and 300 °C for one hour. X-ray diffraction (XRD) analysis confirmed the amorphous nature of the deposited CoFeDy films under four distinct conditions. Notably, a thickness-dependent increase in low-frequency alternate-current magnetic susceptibility (χac) was observed. After annealing at 300 °C, CoFeDy films exhibited the highest χac compared to other temperatures. Surface roughness exhibited a decreasing trend with rising annealing temperature, as observed through atomic force microscopy (AFM) experiments. The maximum surface energy of CoFeDy films was achieved at a thickness of 50 nm following annealing at 300 °C. Higher surface energy was indicative of stronger adhesion efficiency. Furthermore, lower resistance and sheet resistance values were obtained through annealing at higher temperatures, suggesting that increasing thickness and reducing electron transport barriers enhanced electron conductivity. As film thickness increased, transmittance decreased due to the thickness effect, suppressing the photon signal. Consequently, rougher surfaces were associated with improved performance in magnetism, electrical adhesion, and optics, attributed to reduced domain pinning, enhanced carrier conductivity, and minimized light scattering.

Electrical properties of TiO2 films synthetized by sol-gel process

Titanium oxide (TiO2) is one of the most used metal oxides for its multiple applications due to its high sensitivity, fast response, low cost, no toxicity and used in hostile environments. In this work was deposited TiO2 film on 304 stainless steel substrates using the spin coating technique. The synthesis of the deposited solution was with the sol-gel method a temperature environment, obtained TiO2 films on different thermal treatments. The results of the experiment show film: with a thickness from 0.6 to 1μm, anatase phase at the plane (101). The Raman spectroscopy confirms the TiO2 anatase phase. The resistivity decreases, and conductivity increases with increasing temperature. The micrograph SEM observes a compact and smooth homogeneous surface with an average size of 18.40nm to 7nm.

On the physical meaning of the geometric factor and the effective thickness in the Montgomery method

The Montgomery method is extensively employed to determine the electrical resistance tensor of anisotropic samples. This technique relies on two essential parameters describing an isotropic system: the geometric factor (H1) and the effective thickness (E). The numerical values of these parameters are intricately linked to the dimensions of an isotropic block equivalent to the studied anisotropic specimen. While these parameters hold importance, the physical interpretation of these terms still lacks clarity. In this study, we utilized the finite element method to simulate electrical transport experiments across samples of various shapes. Utilizing the Electric Currents physics interface in the COMSOL program, we were able to provide a comprehensive analysis of the physical meaning of these parameters to accurately determine the electrical properties of thin films and wafers. The presented findings related to the physical interpretation of H1 and E terms make substantial contributions to the field of electrical transport experimental techniques, which are fundamental to design advanced materials for technological applications and understand their physical properties.

Effect in variation of the cationic precursor temperature on the electrical and crystalline properties of MnS growth by SILAR

The crystallographic, optical, and electrical properties of manganese sulfide thin films depend on the control of the temperature precursors in the synthesis process, as shown by the results of this work. MnS thin films were deposited on glass substrates using the SILAR method and over an additional layer of CdS synthesized by chemical bath deposition (CBD) to acquire a p-n heterojunction. SILAR is an inexpensive method performed with a homemade robot in this case. Temperature in the solution precursors varied from 20 to 80 °C in four experiments. The morphology and structure of MnS and FTO/CdS/MnS thin films were studied through scanning electron microscopy (SEM) and grazing-incidence X-ray diffraction (GIXRD); the results indicate that materials showed a polycrystalline behavior, a diffraction peak of α- MnS cubic phase was observed with lattice constants values, ranging from 4.74 to 4.75 Å.Additionally, Raman spectroscopy showed a signal corresponding to the transversal optical phonons of MnS at a wavenumber near 300 cm−1. UV–vis spectroscopy showed optical bandgap values of 3.94, 4.0, 4.09, and 4.26 eV for thin films obtained at 20°, 40°, 60°, and 80 °C.respectively. Results indicated 80 °C as an optimal cationic precursor process temperature, achieving optical transmittance T% and good film quality according to SEM and GIXRD for the synthetization of MnS. The current–voltage (I–V) characterization in the heterojunction showed a characteristic diode curve with an open circuit voltage (VOC) of 300 mV under illumination, which indicated that the manganese sulfide behaves as p-type material contributing with positive charge carriers, while CdS behaves as n-type material.

Optical and electrical properties of Ni+2 doped nanocrystalline Bi2S3 thin films prepared by chemical bath deposition method

Nickel (Ni+2) doped nanocrystalline Bi2S3 thin films are deposited on the glass substrate from the solutions containing Bismuth Nitrate, Ethylenediamine Tetraacetic acid (EDTA) and Thioacetamide at a bath deposition temperature of 318K. The optical, surface morphological and electrical properties of Ni-doped Bi2S3 thin films prepared at three different doping concentration are investigate by using ultraviolet–visible transmission spectra (UV–Vis), Scanning electron microscopy (SEM), Energy Dispersive X-ray (EDAX) and thermo-e.m.f. techniques. The optical band gap energies are found in between 2.32-2.43 eV. The SEM images show that the prepared films are continuous, dense and distributed over the entire area with good uniformity. The electrical conductivity of the films are in the order of 10-2 Ω-1 m-1 . The films are n-type as determined from the Hot Probe method. Photoconductivity studies reveal that photocurrent increases with the increase in Ni doping concentrations. Due to the absorption of photons, free electron-hole pairs (EHP) are produce.

Improving Optical and Electrical Characteristics of GaN Films via 3D Island to 2D Growth Mode Transition Using Molecular Beam Epitaxy

Molecular beam epitaxy (MBE) is demonstrated as an excellent growth technique for growing a low-defect GaN channel layer, which is crucial for controlling vertical leakage current and improving breakdown voltage (BV) in GaN-based high-electron mobility transistors (HEMTs). The 3D islands to 2D growth mode transition approach was induced by modulating substrate growth temperature (Tsub), displaying an overall improvement in film quality. A comprehensive investigation was conducted into the effects of Tsub on surface morphologies, crystal quality, and the optical and electrical properties of GaN films. Optimal results were achieved with a strain-relaxed GaN film grown at 690 °C, exhibiting significantly improved surface characteristics (root-mean-square roughness, Rq = 0.3 nm) and impressively reduced edge dislocations. However, the film with the smoothest surface roughness, attributed to the effect of the Ga-rich condition, possessed a high surface pit density, negatively affecting optical and electrical properties. A reduction in defect-related yellow emission further confirmed the enhanced crystalline quality of MBE GaN films. The optimized GaN film demonstrated outstanding electrical properties with a BV of ~1450 V, surpassing that of MOCVD GaN (~1180 V). This research significantly contributes to the advancement of MBE GaN-based high electron mobility transistor (HEMT) applications by ensuring outstanding reliability.

Electrical and Optical Properties of Fluorine-Doped Tin Oxide Films Fabricated at Different Substrate Rotating Speeds during Ultrasonic Spray Pyrolysis Deposition

Electrical and Optical Properties of Fluorine-Doped Tin Oxide Films Fabricated at Different Substrate Rotating Speeds during Ultrasonic Spray Pyrolysis Deposition

Research on the heat resistance and electrical properties of fluorinated polyimide/nano-Al2O3/nano-Si3N4 composite materials

Polyimide (PI) refers to a polymer containing an imide ring characteristic structure on the main chain. It has excellent thermal stability, insulation properties and other characteristics. The Tesla transformer is the core component of the primary pulse source of the high-current electron beam accelerator. It is also an essential component of the energy storage pulse power supply. Therefore, it has broad application prospects in the fields of national defense and civil industry. If the insulation performance of the turn-to-turn coils of the Tesla transformer does not meet the standards, it will break down during high-voltage corona discharge, causing transformer failure. Therefore, it is crucial to improve the insulation performance of Tesla transformer inter-turn wrapping materials. The incorporation of fluorine-containing groups has proven to be a transformative strategy that significantly enhances the physical, chemical, optical, and electrical properties of PI films. In addition, numerous studies have demonstrated that introducing inorganic fillers into the polyimide matrix can substantially enhance the insulating properties of polyimide films. This paper specifically concentrates on elevating the insulating and thermal attributes of polyimide. Initially, a range of polyimide films was synthesized for performance assessment by employing various fluorinated dianhydride and diamine components, utilizing them as substrates. Then, we used nano-silicon nitride (nano-Si3N4) and nano-alumina (nano-Al2O3) as doping phases to prepare PI composite films, which reduced the dielectric constant and increased the breakdown strength.

High-Performance Blue Perovskite Light-Emitting Diodes Enabled by Synergistic Effect of Additives.

While quasi-two-dimensional (quasi-2D) perovskites have good properties of cascade energy transfer, high exciton binding energy, and high quantum efficiency, which will benefit high-efficiency blue PeLEDs, inefficient domain distribution management and unbalanced carrier transport impede device performance improvement. Herein, (2-(9H-carbazol-9-yl)ethyl)phosphonic acid (2PACz) and methyl 2-aminopyridine-4-carboxylate (MAC) were simultaneously introduced to a blue quasi-2D perovskite film. Relying on the synergistic effect of 2PACz and MAC, it not only modulates the phase distribution inhibiting the n = 2 phase but also greatly improves the electrical property of the quasi-2D perovskite film. As a result, the as-modified blue quasi-2D PeLED demonstrated an external quantum efficiency (EQE) of 17.08% and a luminance of 10142 cd m-2. This study exemplifies the synergistic effect among dual additives and offers a new effective additive strategy modulating phase distribution and building balanced carrier transport, which paves the way for the fabrication of highly efficient blue PeLEDs.

Tailoring ohmic contact of CdZnTe based device using a ZnTe:Cu film interlayer

ZnTe materials exhibit distinctive characteristics that render them exceptionally suitable for the utilization in circumventing the electrode contact issue for the CdZnTe based devices for photoelectric applications. This work employed the co-sputtering technique to fabricate ZnTe:Cu films, probing the influences of Copper (Cu) sputtering power on the film's structural, morphological, optical, and electrical properties. It is disclosed that the sputtering power of the Cu target leads to a proportional increase in CuxTe compounds within the ZnTe:Cu films. Notably, an increase in the sputtering power of the Cu target is found to enhance the carrier concentration of the film, but not decrease the resistivity. This unnormal arose is due to a substantial reduction in carrier mobility at higher Cu target sputtering powers. The ZnTe:Cu film exhibits relatively lower resistivity when the sputtering power of the Cu target is approximately 3 W. The optimized ZnTe:Cu film as a buffer layer for the electrode is favor of remarkable improving the ohmic contact properties between the electrode and the CdZnTe, exhibiting a low contact resistivity of 0.62 Ω cm2. This work offers a promising approach to ameliorate the contact performance for the CdZnTe devices with high performance and high reliability.

Enhanced Electrical and Optical Properties of Bismuth Tantalum Oxide Thin Films through Graphene Oxide Doping.

In this study, a hybrid thin film was fabricated by doping graphene oxide in a bismuth tantalum oxide solution in the sol-gel state. The thin film was produced by a brush-coating process. The graphene oxide doping ratios used were 0, 5, and 15 wt %. In the process of producing the thin film, the prepared sol-gel solution generates contraction forces, owing to the shear stress from the bristles of the brush, forming a microgroove structure. This structure was confirmed through atomic force microscopy, transmission electron microscopy, and energy-dispersive spectroscopy analyses. As a result of line profile analysis in atomic force microscopy, the groove heights of the thin film surface at 0, 5, and 15 wt % doping were 110, 130, and 160 nm, respectively, and the width of all grooves was 1 μm. The width of all thin films was approximately 1 μm, and microgrooves were confirmed. Moreover, the hybrid thin-film formation was confirmed by X-ray photoelectron spectroscopy. By comparing the electrical properties of the bismuth tantalum oxide thin film without graphene oxide doping and the thin film doped with 15 wt % graphene oxide, it was demonstrated that the electro-optical properties increased excellently with graphene oxide doping. Typically, the threshold voltage was reduced by approximately 0.26 V. Based on these observations, graphene oxide doped bismuth tantalum oxide hybrid thin films can be considered as promising candidates for thin-film applications in next-generation displays.

Effect of Surface Roughness on the Magnetism, Nano-indentation, Surface Energy, and Electrical Properties of Co60Fe20Dy20 Films on Si (100) Substrate

Effect of Surface Roughness on the Magnetism, Nano-indentation, Surface Energy, and Electrical Properties of Co60Fe20Dy20 Films on Si (100) Substrate

ELECTRICAL, OPTICAL, AND CHEMICAL PROPERTIES OF GRAPHENE THIN FILMS FABRICATED BY VACUUM FILTRATION TECHNIQUE

There has been considerable interest in graphene as a transparent electrode material because of its extraordinary features, such as high optical transmittance, high electrical conductivity, excellent thermal conductivity, exceptional mechanical strength, and remarkable electrochemical capacity. In addition, transparent conductors’ graphene thin films have been considered a promising candidate to replace currently utilized indium tin oxide films, which are unlikely to meet future demands because of their rising cost. In this study, a vacuum filtration process along with isopropyl alcohol (IPA)-assisted with direct transfer (IDT) technique is used to prepare wide-area highly conductive graphene thin films on different substrates including (glass, and PET). The graphene thin films' optical, structural, and electrical properties are studied. The graphene sheets are deposited homogeneously on the substrate, and the distribution of small graphene sheets is observed in SEM images. XPS analysis revealed that the amount of oxygen in graphene decreases significantly with annealing at 500°C and treated with HNO3. Furthermore, the graphene transparent conductive films prepared by the adjusted vacuum filtration method show low sheet resistances of 12.2, 1.41, 1.18, and 0.8 kΩ/sq with transmittances of 81%, 70%, 64.3%, and 46.4% respectively after being annealing at 500°C and treated with HNO3.

Analysis of the Effect of Copper Doping on the Optoelectronic Properties of Indium Oxide Thin Films and the Thermoelectric Properties of an In2O3/Pt Thermocouple

The detection and real-time monitoring of temperature parameters are important, and indium oxide-based thin film thermocouples can be integrated on the surface of heaters because they operate normally under harsh conditions and provide accurate online temperature monitoring. The higher stability and appropriate optical and electrical properties of In2O3 make it very suitable as an electrode material for thermocouple sensors. This work demonstrates that copper doping can alter the optical and electrical properties of In2O3 films and regulate the output performance of thermocouples. Copper-doped In2O3 thin films were prepared using the magnetron co-sputtering method. The doping concentration of Cu was controlled using direct current (DC) power. An In2O3/Pt thermocouple sensor was prepared, and the optoelectronic and thermocouple properties were adjusted by changing the copper doping content. The thickness valve of the thin film sample was 300 nm. The results of the X-ray diffraction suggested that the structure of the doped In2O3 thin films was cubic. The results of the energy-dispersive X-ray analysis revealed that Cu was doped into the In2O3 thin films. All deposited films were n-type semiconductor materials according to Hall effect testing. The 4.09 at% Cu-doped thin films possessed the highest resistivity (30.2 × 10−3 Ω·cm), a larger carrier concentration (3.72 × 1020 cm−3), and the lowest carrier mobility (0.56 cm2V−1s−1). The optical band gap decreased from 3.76 to 2.71 eV with an increase in the doping concentration, and the transmittance of the film significantly reduced. When the DC power was increased, the variation range of Seebeck coefficient for the In2O3/Pt thermocouple was 152.1–170.5 μV/°C, and the range of thermal output value was 91.4–102.4 mV.

Chemically processed CdTe thin films for potential applications in solar cells – Effect of Cu doping

Thin films of cadmium telluride (CdTe) have attained the attention of researchers due to the potential application in solar cells. However, cost-effective fabrication of solar cells based on thin films along with remarkable efficiency and control over optical properties is still a challenging task. This study presents an analysis of the structural, optical and electrical properties of undoped and Cu-doped CdTe thin films fabricated on ITO coated glass substrates using an electrodeposition process with a focus on practical applications. Electrolytes of cadmium (Cd), tellurium (Te) and copper (Cu) are prepared with a low molarity of 0.1 M. Thin films are deposited by keeping current density in the range of 0.12–0.3 mA/cm2. Copper doping is varied (2-10 wt%) for the optimized sample. X-ray diffraction crystallography indicates that both undoped CdTe and Cu-doped CdTe films crystallize into a dominant hexagonal lattice. Direct energy band gap is observed for both undoped and doped conditions. The study revealed a drop in the optical band gap energy to ∼1.46 eV with the increase in doping (Cu) concentration from 2 to 10 wt%. Increase in mobility and conductivity is observed with the increase in current density of the deposited undoped CdTe thin films. Whereas, Cu doping of 6 wt% produced thin films with acceptable mobility and conductivity for the doped samples. Furthermore, photoluminescence (PL) spectroscopy unveiled a multitude of emission peaks encompassing the visible spectrum, arising from the combination of electrons and holes through both direct and indirect recombination processes. Findings of this study suggest that chemically produced CdTe thin films would be suitable for use as low-cost applications pertaining to solar cells.

Exploring the synergistic effects of aluminum and hydrogen impurities on high-electron-mobility sputtered-ZnO thin films

This study investigated the influence of aluminum (Al) impurity on the lattice structure, electrical, and optical properties of ZnO thin films, which were sputtered under a high vacuum environment using argon and hydrogen gases. The results revealed high electron mobility (μ) alongside a significant increase in carrier concentration (n), which deviates from the behavior typically observed in semiconductor materials. Particularly in conventional semiconductors, within the n range of 1020 cm−3, the μ exhibits a dramatic decrease with even a small increase in n. Interestingly, in this study, despite the increase in n from 2 to 3.8 × 1020 cm−3, the μ remains consistently high at around 53 cm2/Vs. Additionally, this study reveals that at an appropriate concentration, Al serves not only as a substitute for Zn to generate electrons but also as a defect passivator, similar to hydrogen. The synergistic effect of Al and hydrogen also relaxes the crystal structure, minimizing deformation and enhancing electron mobility. These effects contribute to low resistivity alongside the inherent high optical transmittance of ZnO thin films, resulting in a significantly improved figure of merit.

High Electrical and Mechanical Properties Obtained in a Polyimide‐Based Nanocomposite with Sandwich Structure via Multidimensional Design

AbstractAs an excellent polymer material, polyimide (PI) plays an important role in practical applications. However, traditional filler doping modification is hard to simultaneously improve the dielectric properties and mechanical properties of the film. Here, PI–boron nitride (BN) nanosheets/PI–sodium titanate nanotubes (STNs)/PI–BN composite films with sandwich structure are prepared by in situ polymerization and multilayer coating processes, which significantly enhance the electrical and mechanical properties of dielectric films. With only 0.5 wt% fillers doping, the AC breakdown strength of the composite film can reach 183.7 kV mm−1, which is 16.41% higher than that of pure PI. When the filler doping is 1.5 wt%, the corona aging time of the composite film achieves 311.7% higher than that of pure PI film. In addition, the composite film exhibits outstanding elongation at break (58%) and tensile strength (138.92 MPa) performance. The 2D BN of the outer layer and 1D STNs of the middle layer effectively block the injection of charge carriers while improving the internal polarization response. A mechanism related to microstructure and interface is proposed to explain the improvement of electrical and mechanical properties in detail. This work provides a useful idea for the accurate design of high‐performance dielectric films.

Influence of particle size distribution on dielectric, electrical, and microstructural properties of aerosol-deposited Ga2O3 film for advanced electronic device

Gallium oxide (Ga2O3) films have been the subject of recent scientific and technological research, owing to their outstanding characteristics. In this study, a rapid and efficient aerosol deposition (AD) process was utilized to produce Ga2O3 films. The effect of the particle size distribution (PSD) of the columnar or plate-like Ga2O3 starting powder on the dielectric, electrical, and microstructural properties of the films was also investigated. The dielectric constant and loss tangent of polycrystalline β-Ga2O3 films fabricated using AD with narrow PSD Ga2O3 powder were 10 and 6.7% at 10 kHz, respectively. In contrast, the films composed of a wide PSD powder exhibited a dielectric constant of 18 and a loss tangent of 3.6%. The leakage current densities of 1.77 × 10−5 and 6.63 × 10−7 A/cm2 at 5 V of the films using narrow and wide PSD powder were observed, respectively. In addition, the breakdown electric fields of the Ga2O3 films with narrow and wide PSD powder were 1.15 and 1.06 MV/cm, respectively. Qualitative and quantitative analyses of the surface and inner microstructure were conducted to elucidate the differences in film characteristics according to the PSD. Consequently, a wider PSD enables the production of relatively denser and flatter high-quality films owing to enhanced hammering and crush effects. These results suggest potential applications of Ga2O3 films fabricated using AD in various fields, such as capacitors, power semiconductors, and sensor devices.

Atmospheric–pressure DBD plasma modifying photoemission, optical and electrical properties of polycarbonate films

In this study, the DBD plasma reactor has been constructed, characterized, and tested to be employed in material treatment for use in different applications. A neon power source with an output of 10 kV, 30 mA, with a frequency of 20 kHz is used to drive the DBD reactor in an atmospheric-pressure environment. The investigation covered the analysis of many parameters of the dielectric barrier discharge (DBD) reactor, including its discharge voltage, current, capacitance, consumption energy, and the light emission of the produced plasma. Also, to examine the generated DBD plasma effect, the photoemission, optical, and electrical characteristics of untreated/treated polycarbonate films were investigated using photoluminescence spectroscopy, UV/Vis spectroscopy, and electrical spectroscopy. The results demonstrated the appearance of two modes in the DBD discharge: filamentary and homogeneous. Moreover, the DBD reactor's power consumption has been measured to be 20 mW at a supplied voltage of 6.5 kV peak-to-peak, operated in atmospheric–pressure. The photoluminescence emission results emphasized that the treated films are modified particularly with increasing DBD treatment time. The UV–Vis spectra demonstrated a notable displacement of the absorption edge towards higher wavelengths as the duration of DBD exposure increased. This is indicative of the reduction of the band gap energy, thus improving the electric conductivities. The optical parameters of the treated polycarbonate films were enhanced in comparison to the untreated sample. Through the used frequency range, measurements of dielectric loss, dielectric constant, as well as AC electrical conductivity, are sensitive parameters to the modifications in electrical behaviors due to DBD plasma treatment.