Electrical Properties Of Films Research Articles

Studies of electrical resistivity and magnetic properties of CuFe and CuNiFe films prepared by magnetron sputtering

The Cu-Fe binary alloys exhibit severe elemental segregation, resulting in an inhomogeneous microstructure, which leads to differences in microregion magnetic properties, thus affecting their application. Employing magnetron sputtering to produce films is advantageous for achieving a consistent dispersion of Fe within the Cu matrix. Furthermore, the addition of Ni will result in a more uniform distribution of Fe and facilitate the formation of the ferromagnetic Ni3Fe phase. In this study, Cu100−xFex and Cu100−x(Ni3/4Fe1/4)x series films were prepared by magnetron sputtering technique. The magnetic properties of films are closely related to their ferromagnetic element content. An increase in the content of ferromagnetic elements leads to an improvement in the saturation magnetization (MS) strength and a decrease in the coercivity (HC). The formation of Fe-Fe pairs is more favorable for magnetic properties compared to Ni-Fe pairs. Meanwhile, by comparing with bulk alloys, the distribution of the magnetic elements severely affects the magnetic properties. Moreover, the resistivity of Cu100−xFex films (20.3–96.7 μΩ cm) is much higher than that of Cu100−x(Ni3/4Fe1/4)x films (15.6–60.6 μΩ cm), which depends on the magnetic properties. This study systematically analyzes the effect of the content and distribution of magnetic elements on magnetic and electrical properties.

Thermal, viscoelastic, and electrical properties of thermoplastic polyurethane films reinforced with multi-walled carbon nanotubes

Thermoplastic polyurethane (TPU) doped with multi-walled carbon nanotubes (MWCNTs) at 1, 3, 5, and 7 wt% has been studied. The effect of MWCNTs on thermal, viscoelastic, and electric properties in the TPU matrix was characterized by differential scanning calorimetry (DSC), dynamic mechanical analysis (DMA), and by impedance spectroscopy. The results show that the thermal, electrical, and viscoelastic properties, such as the glass transition temperature, shifted towards high temperatures. The melting temperature decreased, and the conductivity and the storage modulus increased by 61.5 % and 58.3 %. The previously observed behavior on the films is due to the increase in the mass percentage of carbon nanotubes (CNTs) in the TPU matrix. Also, it can be said that the CNTs were homogeneously dispersed in the TPU matrix, preventing the movement of the polymer chains, and generating channels or connections that increase the conductivity and improve the thermal properties of the material.

Enhanced structural, optical, dielectric, and electrical properties in polymer nanocomposite films via loading AgNO3 NPs for emerging optical and electrical applications

Enhanced structural, optical, dielectric, and electrical properties in polymer nanocomposite films via loading AgNO3 NPs for emerging optical and electrical applications

Co-Optimization of a-InGaZnO Framework for Enhancing Thin Film Transistors Stability and Electrical Properties

Co-Optimization of a-InGaZnO Framework for Enhancing Thin Film Transistors Stability and Electrical Properties

Effect of doping on the structural, optical and electrical properties of TiO2 thin films for gas sensor

Effect of doping on the structural, optical and electrical properties of TiO2 thin films for gas sensor

Electrical properties of AgNbO3 thick films by aerosol deposition followed by post-annealing in oxygen atmosphere

Electrical properties of AgNbO3 thick films by aerosol deposition followed by post-annealing in oxygen atmosphere

Combined effects of substrate temperature and post annealing temperature on structural, optical and electrical properties of Sb-doped SnO2 films

Sb-doped SnO2 (ATO) films have received extensive attention as transparent conductive films, but there is still a lack of in-depth and systematic study on combined effects of substrate temperature (Ts) and annealing temperature (Ta) on their transparent conductive properties. In this study, ATO films were prepared using RF magnetron sputtering at RT∼400 ℃ and subsequently annealed at 200–1000 ℃. The results show that the conductive properties of the films enhance (with a decrease in resistivity from 1.15×10-1 to 2.15×10-3 Ω•cm) and the average visible-light transmittance (TVis) decreases (90.16 → 38.24%) with increase of Ts. With the increase of Ta, the conductive properties of the films prepared at different Ts tend to first enhance and then degrade, and the TVis basically shows a trend of first decreasing and then increasing. After annealing at 600 ℃, the films prepared at RT and 100 ℃ can achieve better comprehensive properties (resistivity of 2.50×10-3 and 1.64×10-3 Ω•cm, carrier concentration of 3.35×1020 and 4.93×1020 cm-3, mobility of 7.73 and 7.76 cm2/V•s, sheet resistance of 84 and 55 Ω/sq., and TVis of 86.63 and 79.50%). In order to explore the intrinsic mechanism of the optical and electrical performance of ATO films changing with Ts and Ta, the preferred orientation, crystallinity, and stress state of the films were analyzed by XRD, and their surface morphology was observed by SEM. Meanwhile, the chemical states of Sn, O and Sb as well as Sb content in the films were analyzed by XPS, and their lattice vibration modes of the film were studied by Raman spectra. Finally, the process-structure-properties correlations were established for the ATO films.

Advancement of electro-optical properties through changes in the physicochemical composition of hybrid thin films by doping reduced graphene oxide into a sol-gel process solution.

A hybrid thin film was fabricated by doping graphene oxide into a sol-gel solution containing a mixture of zirconium, bismuth, and indium oxide. The thin film was fabricated using a brush coating process. The graphene oxide doping ratios used were 0, 5, and 15 wt%. During the thin film fabrication process, the produced sol-gel solution generates a contractile force due to the shear stress of the brush bristles, resulting in a microgroove structure. This structure was confirmed through scanning electron microscopy analysis, which revealed the clear presence of rGO. Comparing the electrical properties of a zirconium bismuth indium oxide thin film without graphene oxide doping and a thin film doped with 15 wt% graphene oxide, the electro-optical properties were significantly improved with graphene oxide doping. In general, the threshold voltage decreased by approximately 0.42 V. In addition, bandgap measurements confirmed the improved conductivity characteristics with graphene oxide doping. Since this improvement in electro-optical properties is associated with the reduction process due to graphene oxide doping, X-ray photoelectron spectroscopy analysis was performed to assess the intensity change of each element. Based on these observations, hybrid thin films doped with graphene oxide emerge as promising candidates for next generation thin film.

Effect of particle size on optical and electrical properties of thin films – a simulation approach

This paper presents a simulated investigation of the relationship between surface roughness and particle size as well as the resulting impact of the both on the thin film’s physical and optical properties. Non-porous thin films are created through computer simulation for a range of particle sizes following the random deposition with a surface relaxation approach. For the deposited thin films different fundamental parameters like transmittance, reflectance, absorption coefficients, frequency dependent dielectric constants, loss angle, refractive indices, optical band gap have all been calculated and in this process of calculation the fundamental values of two different materials; zinc oxide (ZnO and cadmium selenide (CdSe) are taken. It has been seen that when the particle sizes are comparable the calculated values of optical band gap of both ZnO and CdSe matches well with the experimental values of the same reported by others. This is probably the first effort to develop a direct relation between the particle size with different fundamental optical properties of different materials through simple simulation which agrees well with the experimental result. This would definitely help the experimental researchers in the field of material science to design their experiments as per the desired requirements.

Enhanced optical, dielectric, and mechanical properties of starch-based nanocomposite films reinforced with layered double hydroxide

In this study, we present the optical, electrical, dielectric, and mechanical properties of nanocomposite films containing different inorganic filler content. Starch is used as the biopolymer while the carbonate intercalated Mg-Al layered double hydroxide (LDH) is used as the inorganic filler. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), scanning electron microscopy (SEM), and energy dispersive X-ray analysis (EDS) are used to characterize and evaluate the dispersion of LDH in the biopolymer matrix. Increasing the filler content was found to improve the optical properties by increasing the light absorption coefficients, reducing the optical gap energy and increasing the refractive index. Improved dielectric properties were demonstrated by the significant decrease in the dielectric energy dissipation with increasing filler content. In addition, mechanical properties were enhanced by increasing the Young’s modulus when the filler content reached 5 wt %.

Cu-doped NiO thin film's structural, optical, and electrical properties and its negative absorption behaviour in the Infra-Red region

NiO undoped and Cu-doped thin films on FTO-coated glass (fluorine-doped tin oxide) are prepared by employing the sol-gel spin coating method. The Cu-doping effect was observed in all the characterized reports such as absorption, transmittance, field emission scanning electron microscope (FESEM), Grazing Incidence X-ray Diffraction (GIXRD), photoluminescence (PL), Raman spectra, current-voltage measurement (IV), and X-ray photoelectron spectroscopy (XPS). Enhancement in electrical conductivity due to Cu doping and IR illumination has been found. Band gap can also be tuned by varying doping concentrations. One new phenomenon called negative absorption (NA) has been found while investigating the optical properties in the infrared (IR) region for both undoped and Cu-doped NiO on the FTO substrate, which opens a new door for advanced research. The multifarious properties of NiO thin films offer various applications in many different fields.

Электрофизические и температурные характеристики тонких слоёв квантовых точек Ag2S

This paper presents a study of the electrical properties of colloidal silver sulfide quantum dots thin films (Ag2S/SiO2 QDs) and silver sulfide quantum dots decorated with Au plasmon nanoparticles (Ag2S/SiO2/Au QDs). A study of the conductivity temperature dependences was carried out in the temperature range from 300 to 360 K. The activation energy values were obtained from linear approximations of the current-voltage characteristics in Arrhenius coordinates. It has been shown that decorating Ag2S/SiO2 QDs with Au plasmon nanoparticles leads to an increase in the band gap from 0.29 to 0.89 eV. In this work, the ideality factor is calculated and the main conductivity mechanisms of the presented thin-film structures are determined. It has been shown that decorating Ag2S/SiO2 QDs with Au plasmon nanoparticles leads to a change in the conductivity type. According to the Mott-Gurney model, the charge carriers mobility is calculated.

Investigations of In2O3 Added SiC Semiconductive Thin Films and Manufacture of a Heterojunction Diode

This study involved direct doping of In2O3 into silicon carbide (SiC) powder, resulting in 8.0 at% In-doped SiC powder. Subsequently, heating at 500 °C was performed to form a target, followed by the utilization of electron beam (e-beam) technology to deposit the In-doped SiC thin films with the thickness of approximately 189.8 nm. The first breakthrough of this research was the successful deposition of using e-beam technology. The second breakthrough involved utilizing various tools to analyze the physical and electrical properties of In-doped SiC thin films. Hall effect measurement was used to measure the resistivity, mobility, and carrier concentration and confirm its n-type semiconductor nature. The uniform dispersion of In ions in SiC was as confirmed by electron microscopy energy-dispersive spectroscopy and secondary ion mass spectrometry analyses. The Tauc Plot method was employed to determine the Eg values of pure SiC and In-doped SiC thin films. Semiconductor parameter analyzer was used to measure the conductivity and the I-V characteristics of devices in In-doped SiC thin films. Furthermore, the third finding demonstrated that In2O3-doped SiC thin films exhibited remarkable current density. X-ray photoelectron spectroscopy and Gaussian-resolved spectra further confirmed a significant relationship between conductivity and oxygen vacancy concentration. Lastly, depositing these In-doped SiC thin films onto p-type silicon substrates etched with buffered oxide etchant resulted in the formation of heterojunction p-n junction. This junction exhibited the rectifying characteristics of a diode, with sample current values in the vicinity of 102 mA, breakdown voltage at approximately −5.23 V, and open-circuit voltage around 1.56 V. This underscores the potential of In-doped SiC thin films for various semiconductor devices.

Effects of Postdeposition Annealing on the Electrical Properties of Cu2O/4H–SiC PiN Diodes

Copper oxide (Cu2O) is a promising p‐type material owing to its high absorption coefficient, suitable bandgap width, chemical stability, nontoxicity, and abundance. In this study, the effect of postdeposition annealing (PDA) on the electrical properties of Cu2O thin films deposited on silicon carbide (SiC) substrates is investigated. The films are subjected to PDA using radio‐frequency sputtering at various temperatures in air. During PDA, the Cu2O films are maintained at <300 °C and transitioned to cupric oxide (CuO) at 400 °C. The as‐deposited Cu2O film exhibits a low oxidation peak (Cu2+), whereas the phase‐transformed CuO films exhibit a higher binding energy with the emergence of satellite peaks. The rectification ratios of the Cu2O device annealed at 300 °C and CuO device annealed at 400 °C are determined as 2.02 × 107 and 1.01 × 105, respectively, denoting the substantial enhancement of approximately 55.04 for the Cu2O/SiC device and degradation of approximately 0.28 for the CuO/SiC device relative to their non‐annealed counterparts. Therefore, in this study, the significant improvement in the performance of Cu2O thin films with the meticulous deposition control of potential p‐type materials, such as Cu2O and CuO, for high‐throughput and low‐cost electronic applications is demonstrated.

Exploring the Post-Annealing Influence on Stannous Oxide Thin Films via Chemical Bath Deposition Technique: Unveiling Structural, Optical, and Electrical Dynamics

Stannous oxide (SnO2) thin films have garnered significant attention for their promising applications in various electronic and optoelectronic devices. In this study, we investigate the impact of post-annealing on the structural, optical, and electrical properties of stannous oxide thin films deposited using the chemical bath deposition (CBD) technique. The thin films were prepared on a Borosilicate glass substrate, followed by a controlled annealing process to enhance their performance. Structural analysis was conducted using techniques such as X-ray diffraction (XRD) to examine the cubic crystalline structure and the crystallite size increase induced by post-annealing. The results revealed alterations in grain size from the SEM and the purity of samples confirmed from EDX results. The optical properties of the Stannous oxide thin films were examined using UV-Vis spectroscopy. The optical absorption and bandgap characteristics were analyzed to understand how post-annealing influences the optical behavior of the thin films. Where the optical absorption was 320nm and the bandgap ranges were 3.86eV to 3.83eV. Furthermore, the electrical properties of the thin films were evaluated semiconducting nature, and conductivity increased with rising post-annealing. The findings from this study contribute to the understanding of the role of post-annealing in tailoring the properties of Stannous oxide thin films. The optimization of structural, optical, and electrical characteristics is crucial for their successful integration into electronic and optoelectronic devices.

Optical, Electrical, Structural, and Thermo-Mechanical Properties of Undoped and Tungsten-Doped Vanadium Dioxide Thin Films.

The undoped and tungsten (W)-doped vanadium dioxide (VO2) thin films were prepared by electron beam evaporation associated with ion-beam-assisted deposition (IAD). The influence of different W-doped contents (3-5%) on the electrical, optical, structural, and thermo-mechanical properties of VO2 thin films was investigated experimentally. Spectral transmittance results showed that with the increase in W-doped contents, the transmittance in the visible light range (400-750 nm) decreases from 60.2% to 53.9%, and the transmittance in the infrared wavelength range (2.5 μm to 5.5 μm) drops from 55.8% to 15.4%. As the W-doped content increases, the residual stress in the VO2 thin film decreases from -0.276 GPa to -0.238 GPa, but the surface roughness increases. For temperature-dependent spectroscopic measurements, heating the VO2 thin films from 30 °C to 100 °C showed the most significant change in transmittance for the 5% W-doped VO2 thin film. When the heating temperature exceeds 55 °C, the optical transmittance drops significantly, and the visible light transmittance drops by about 11%. Finally, X-ray diffraction (XRD) and scanning electron microscope (SEM) were used to evaluate the microstructure characteristics of VO2 thin films.

Competitive nature of weak anti-localization and weak localization effect in Cr-doped sputtered topological insulator Bi2Se3 thin film

In the present study, we have investigated the effect of magnetic Cr doping on the transport properties of a sputtered Bi2Se3 thin film on the SrTiO3 (110) substrate. The high-resolution x-ray diffraction and Raman spectroscopy measurements revealed the growth of rhombohedral Bi2Se3 thin films. Further electronic and compositional analysis was done by x-ray photoemission spectroscopy and Rutherford backscattering spectroscopy, and the x-value was estimated to be 0.18 in the Bi2−xCrxSe3 thin film. The variation in the resistivity with temperature (2–300 K) revealed the metallic nature in undoped Bi2Se3 up to 30 K and upturn resistivity below 30 K. The Cr-doped Bi2Se3 resistivity data show a traditional semiconducting nature up to 25 K and take an abrupt upturn resistivity below 25 K. The resistivity behavior of both samples was explained by adopting a model that consists of the total resistance, a combination of bulk and surface resistance in parallel. The bulk bandgap value determined by this method is obtained to be 256 meV in an undoped Bi2Se3 thin film. Magnetoconductance data of the undoped thin film revealed a weak anti-localization (WAL) effect, while the Cr-doped thin film showed a weak localization (WL) effect at low temperatures (<50 K). At low magnetic field and low temperature, a competing nature of WAL and WL effects was prominent in the Cr-doped film. A drastic increase in the electrical resistance suggests that Cr doping can significantly modify the electrical properties of Bi2Se3 thin films, which could have potential applications in futuristic devices.

Effect of surface states and in-plane deformation on transport properties of charge carriers in bismuth films

Since the energy spectrum of bismuth charge carriers is highly sensitive to mechanical deformations, studying their influence, leading to an increase or decrease in the overlap of actual extrema, on the transport properties of charge carriers in ultrathin bismuth films makes it possible to investigate the combination of manifestations of the quantum size effect and metallic surface states. In this work, the temperature dependencies of the electrical and galvanomagnetic properties of thin bismuth films (10–1250 nm) are studied under conditions of in-plane tensile and compressive deformation. Deformations are created as a result of the difference in the coefficients of thermal expansion of the film and substrate materials. Silicon with an oxidized surface, mica, and polished cleavage (111) CaF2 are used in order to create either tensile and compressive deformations. The presence of film deformations is confirmed by XRD. The magnitude of deformation is calculated based on the CTEs of the materials. The absence of mechanical stress relaxation or the formation of additional defects during temperature measurements is confirmed by the absence of hysteresis of properties in the range of 77–300 K. Based on the experimental results, the mobilities and concentration of charge carriers are calculated within the framework of the two-band model. As the film thickness decreases to less than 100 nm, an increase in the charge carrier concentration is observed, which is associated with metallic surface states. It is shown that the magnitude of the effect of deformation on the concentration of charge carriers in films of all thicknesses remains unchanged.

Effects of HiPIMS Duty Cycle on Plasma Discharge and the Properties of Cu Film.

In this paper, Cu thin films were deposited on Si (100) substrates by the high-power impulse magnetron sputtering (HiIPMS) technique, and the effects of different duty cycles (from 2.25% to 5.25%) on the plasma discharge characteristics, microstructure, and electrical properties of Cu thin films were investigated. The results of the target current test show that the peak target current remains stable under 2.25% and 3% duty cycle conditions. Under the conditions of a 4.5% and 5.25% duty cycle, the target peak current shows a decreasing trend. The average power of the target shows a rising trend with the increase in the duty cycle, while the peak power of the target shows a decreasing trend with the increase in the duty cycle. The results of OES show that with the increase in the duty cycle, the total peak intensity of copper and argon emissions shows an overall increasing trend. The duty cycle from 3% to 4.5% change in copper and argon emission peak total intensity change is not obvious. The deposition rate and surface morphology of the copper film were investigated by scanning electron microscopy, and the deposition rate of the copper film increased with the increase in the duty cycle, which was mainly due to the increase in the average power. The surface roughness of the copper film was evaluated by atomic force microscopy. X-ray diffraction (XRD) was used to analyze the grain size and texture of the Cu film, and the results showed that the average grain size of the Cu film increased from 38 nm to 59 nm on the (111) and (200) crystal planes. Four-probe square resistance test copper film resistivity in 2.25%, 3% low duty cycle conditions of the copper film resistivity is generally higher than 4.5%, 5.25% high duty cycle conditions, the copper film resistivity shows the trend of change is mainly affected by the copper film grain size and the (111) face of the double effect of the optimal orientation. The lowest resistivity of the copper film measured under the 4.5% duty cycle condition is 1.7005 μΩ·cm, which is close to the intrinsic resistivity of the copper film of 1.67 μΩ·cm.

The structural, optical, electrical and radiation shielding properties of Co-doped ZnO thin films

Co:ZnO thin films are promising due to the similar ionic radii of cobalt and ZnO, and their potential for carrier spin injection, transfer, and detection. This study aims to investigate the structural, optical, electrical, and radiation shielding properties of Co-doped zinc oxide (Co:ZnO) thin films for potential applications in various fields such as semiconductors, solar cells, spintronics, and radiation shielding. The effect of commercially available Cobalt acetate tetrahydrate and Cobalt complex (Co with conjugated NN ligand) as cobalt additives on the synthesis of ZnO thin films is compared, aiming to discern their respective impacts. The dopants are incorporated in 2, 4, and 6 wt%, employing the sol-gel spin coating method.Applying cobalt complex additive as Co precursor resulted in ZnO:Co films with a superior enhancement of the electronic band gap of 2.84–3.00 eV compared to cobalt acetate precursor (2.62–2.84 eV). With the introduction of Cobalt, there is a notable change in the electrical conductivity, showcasing a decrease from 1.5x10−7 to 2.11x10−10 (S/cm). Also, radiation shielding parameters were experimentally measured in the energy range of 186.1–1764.5 keV within the scope of gamma ray spectral analysis. Exposure buildup factors (EBF) in the energy range of 15–15,000 keV were calculated up to 1–40 mean free path (mfp). Mass stopping power (MSP) and projected range values (PR) for nuclear safety applications were calculated for protons and alpha particles using the SRIM code. Thin film thicknesses were determined by using Lambert-Beer law. It was observed that the thin film thicknesses obtained from gamma spectrometry (2.090–2.628 μm) and SEM (2.157–2.725 μm) were compatible with each other.