ABSTRACT This study investigates the electronic properties of a GaAs Variant Toroidal Quantum Ring (VTQR) containing an off-centre donor impurity, focussing on the effect of an external electric field on donor energy and polarisability. Based on the effective mass approximation, we solved the Schrödinger equation using the finite difference method. The results show a typical effect at a toroidal angle of 180 ∘ , where the strength of the electric field leads to a decrease in the donor energy. Intriguingly, at toroidal angles of 90 ∘ and 60 ∘ , the donor energy increases with increasing field strength, indicating improved electron confinement. The probability density distributions shown reveal the location of the electron as influenced by the applied field. Furthermore, polarisability reaches its maximum around an angle of about 80 ∘ for all electric field strengths. This work provides a better understanding of the behaviour of electron in quantum ring systems and suggests potential for the engineering of tunable quantum devices.
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