Electric Field Control Of Magnetism Research Articles

Recent advances in electric field-controlled magnetism using perovskite multiferroic heterostructures for spintronics applications

This review article presents the recent advances in electric field-controlled magnetism using multiferroic heterostructures. Electric field-manipulated spin magnetic moments are important from both basic science and application points of view. Multiferroic materials, where ferroelectricity and magnetic orderings coexist, offer exciting and novel prospects of electric control of magnetic properties. Electric field control of magnetism is essential to developing energy-efficient and versatile spintronic devices that can revolutionize data storage, magnetic sensing, and many other applications. Thus, we will review recent progress in electric field control of magnetism in multiferroic heterostructures and its advanced characterization to identify potential applications, remaining challenges, and future prospects. Through this review, we hope the reader will gain knowledge on the recent advances in electric field-controlled magnetism and its challenges that can lead to the practical realization of new generation devices in the future.

Nonvolatile Electric Control of Antiferromagnet CrSBr.

van der Waals magnets are emerging as a promising material platform for electric field control of magnetism, offering a pathway toward the elimination of external magnetic fields from spintronic devices. A further step is the integration of such magnets with electrical gating components that would enable nonvolatile control of magnetic states. However, this approach remains unexplored for antiferromagnets, despite their growing significance in spintronics. Here, we demonstrate nonvolatile electric field control of magnetoelectric characteristics in van der Waals antiferromagnet CrSBr. We integrate a CrSBr channel in a flash-memory architecture featuring charge trapping graphene multilayers. The electrical gate operation triggers a nonvolatile 200% change in the antiferromagnetic state of CrSBr resistance by manipulating electron accumulation/depletion. Moreover, the nonvolatile gate modulates the metamagnetic transition field of CrSBr and the magnitude of magnetoresistance. Our findings highlight the potential of manipulating magnetic properties of antiferromagnetic semiconductors in a nonvolatile way.

Magneto-ionic modulation of the interlayer exchange interaction in synthetic antiferromagnets

The electric-field control of magnetism is a highly promising and potentially effective approach for realizing energy-efficient applications. Recent interest has focused on the magneto-ionic effect in synthetic antiferromagnets, driven by its potential to enable high-density data storage devices with ultra-low power consumption. However, the underlying mechanism responsible for the magneto-ionic effect on the interlayer exchange coupling remains elusive. In our work, we find that the modulation of the interlayer exchange coupling is highly sensitive to the thickness of the ferromagnetic layer. We have identified that the changes in the interlayer exchange coupling induced by the gate voltage can be associated with the magneto-ionic effects on the top ferromagnetic layer of the synthetic antiferromagnet. The direct contact between the high ion mobility oxide and the top ferromagnetic layer plays a crucial role in facilitating these effects, largely modifying the anisotropy of the layers. Our findings highlight the important role of magneto-ionic control over the properties of the top ferromagnetic layer in governing the observed modifications in the interlayer exchange coupling. This study provides crucial insight into the intricate interplay between stack structure and magneto-ionic effect on magnetic properties in synthetic antiferromagnetic thin film systems.

2D Multiferroics in As‐Substituted Bilayer α‐In2Se3 with Enhanced Magnetic Moments for Next‐Generation Nonvolatile Memory Device

AbstractSearching for multiferroic materials with ferromagnetic (FM) and ferroelectric (FE) properties holds promise for ultra‐high‐density and low‐energy‐consumption memory device applications, but 2D materials with both properties are rare. Herein, a general strategy to achieve nonvolatile electric field control of magnetism in the bilayer (BL) α‐In2Se3 by hole doping is proposed. By first‐principles calculations, it is demonstrated that hole doping can induce robust ferromagnetism in the bilayer α‐In2Se3 due to its unique flat Mexican‐hat‐shape valence band structure. Such band edges cause van Hove singularities (VHS), and proper hole doping can lead to time‐reversal symmetry breaking. The bilayer α‐In2Se3 exhibits ferromagnetism and ferroelectricity within a wide range of doping concentrations, resulting in an unexpected multiferroic phase. Furthermore, when the electrical polarization of α‐In2Se3 flips from downward to upward, it becomes non‐magnetic (NM) from ferromagnetic states in the As‐substituted bilayer α‐In2Se3, which can work as a nonvolatile magnetic storage unit. Remarkably, the As‐substituted bilayer α‐In2Se3 exhibits an enhanced magnetic moment of 1.2 μB per AsSe due to substantial charge transfer across the interface. Notably, the mechanism of electrically controlled magnetism is elucidated as the coupling among the Mexican‐hat‐like dispersion, ferromagnetism, and ferroelectricity. The findings offer a promising strategy for electrical writing and the magnetic reading memory device.

Spin-Selective Memtransistors with Magnetized Graphene.

Spin-polarized bands in pristine and proximity-induced magnetic materials are promising building blocks for future devices. Conceptually new memory, logic, and neuromorphic devices are conceived based on atomically thin magnetic materials and the manipulation of their spin-polarized bands via electrical and optical methods. A critical remaining issue is the direct probe and the optimized use of the magnetic coupling effect in van der Waals heterostructures, which requires further delicate design of atomically thin magnetic materials and devices. Here, a spin-selective memtransistor with magnetized single-layered graphene on a reactive antiferromagnetic material, CrI3, is reported. The spin-dependent hybridization between graphene and CrI3 atomic layers enables the spin-selective bandgap opening in the single-layered graphene and the electric field control of magnetization in a specific CrI3 layer. The microscopic working principle is clarified by the first-principles calculations and theoretical analysis of the transport data. Reliable memtransistor operations (i.e., memory and logic device-combined operations), as well as a spin-selective probe of Landau levels in the magnetized graphene, are achieved by using the subtle manipulation of the magnetic proximity effect via electrical means.

Electric field control of magnetization in polycrystalline ZnO film

A polycrystalline ZnO film is grown on a silicon substrate by the pulsed laser deposition method, and the electric field-induced magnetization in ZnO using an optical cantilever beam magnetometer setup is studied. The magnetization vs bipolar dc electric field measurements reveal the occurrence of magnetization switching in the ZnO film. The magnetization switching in the presence of an electric field is ascribed to the converse magnetoelectric (ME) coupling that takes place between the electrical and the magnetic order parameters existing in the ZnO film. We have found the strain-driven magnetization change as evidenced by the butterfly shape of the magnetization vs the electric field curve. A saturation magnetization of 13.31 MA/m is obtained. Moreover, a significant value of the ME coupling coefficient (α) (1.61 × 10−7 s/m) has also been reported in this article. The emergence of electric field-induced magnetization in a single polycrystalline ZnO film is regarded to be a very promising aspect in designing high-density energy-efficient spintronic and different multifunctional devices.

Giant Nonvolatile Electric Field Control of Proximity‐Induced Magnetism in the Spin–Orbit Semimetal SrIrO3

AbstractWith its potential for drastically reduced operation power of information processing devices, electric field control of magnetism has generated huge research interest. Recently, novel perspectives offered by the inherently large spin–orbit coupling of 5d transition metals have emerged. Here, nonvolatile electrical control of the proximity‐induced magnetism in SrIrO3 based back‐gated heterostructures is demonstrated. Up to a 700% variation of the anomalous Hall conductivity (σAHE) and Hall angle (ΘAHE) as function of the applied gate voltage Vg is reported. In contrast, the Curie temperature TC ≈ 100 K and magnetic anisotropy of the system remain essentially unaffected by Vg indicating a robust ferromagnetic state in SrIrO3 which strongly hints to gating‐induced changes of the anomalous Berry curvature. The electric‐field induced ferroelectric‐like state of SrTiO3 enables nonvolatile switching behavior of σAHE and ΘAHE below 60 K. The large tunability of this system, opens new avenues toward efficient electric‐field manipulation of magnetism.

All-solid integratable device of electric field control of magnetism based on hydrogen ion migration in La1−xSrxMnO3

Field-effect transistors based on semiconductor integration technology have come to a bottleneck, while electric field control of magnetism has great potential for applications in next-generation magnetic memory and calculators based on electron spins. Magnetic properties manipulation from a mechanism of ion migration driven by an electric field has the advantages of low energy consumption, nonvolatility, reproducibility, and durability. Here, we introduce a solid-state integratable hydrogen ion storage electrolyte silicon phosphate as the gate to achieve reversible control of magnetoresistance, magnetism, and magnetic interaction in the La1−xSrxMnO3/SrTiO3 ferromagnetic system. The controllable double-exchange interaction and spin scattering mechanism sketch the theoretical physical picture for these results. This work is expected to open up additional opportunities in the translation of electric control of magnetism into practical applications.

Ferroelectric control of magnetic anisotropy of 5d transition metal monolayers

Electric field control of magnetism using ferroelectric materials offers promising applications in low-power spintronics. We have conducted systematic density functional theory calculations to investigate the magnetic properties of epitaxial $5d$ transition metal monolayers on a ferroelectric substrate: $\mathrm{PbTi}{\mathrm{O}}_{3}$ (PTO). Our study reveals that the magnetocrystalline anisotropy energy of the osmium monolayer is significantly enhanced to 18.1 meV/Os in the upward polarization state and, moreover, the anomalous Hall coefficient of osmium/PTO film is tunable by reversing the electric polarization of the PTO substrate. Additionally, the electric polarization reversal in PTO rotates the easy magnetization axis of the iridium and platinum monolayers by ${90}^{\ensuremath{\circ}}$, which is attributed to the rearrangement of interfacial charges. Our findings suggest an efficient approach to control the magnetization direction of monoatomic layers and provide valuable insights for the development of low-energy spintronics devices.

Electric modulation of anisotropic magnetoresistance in Pt/HfO2–x /NiO y /Ni heterojunctions

Electric field control of magnetism through nanoionics has attracted tremendous attention owing to its high efficiency and low power consumption. In solid-state dielectrics, an electric field drives the redistribution of ions to create one-dimensional magnetic conductive nanostructures, enabling the realization of intriguing magnetoresistance (MR) effects. Here, we explored the electric-controlled nickel and oxygen ion migration in Pt/HfO2−x /NiO y /Ni heterojunctions for MR modulation. By adjusting the voltage polarity and amplitude, the magnetic conductive filaments with mixed nickel and oxygen vacancy are constructed. This results in the reduction of device resistance by ∼103 folds, and leads to an intriguing partial asymmetric MR effect. We show that the difference of the device resistance under positive and negative saturation magnetic fields exhibits good linear dependence on the magnetic field angle, which can be used for magnetic field direction detection. Our study suggests the potential of electrically controlled ion migration in creating novel magnetic nanostructures for sensor applications.

A strain-controlled magnetostrictive pseudo spin valve

Electric-field control of magnetism via an inverse magnetostrictive effect is an alternative path toward improving energy-efficient storage and sensing devices based on a giant magnetoresistance effect. In this Letter, we report on lateral electric-field driven strain-mediated modulation of magnetotransport properties in a Co/Cu/Py pseudo spin valve grown on a ferroelectric 0.7Pb[Mg1/3Nb2/3)]O3–0.3PbTiO3 substrate. We show a decrease in the giant magnetoresistance ratio of the pseudo spin valve with the increase in the electric field, which is attributed to the deviation of the Co layer magnetization from the initial direction due to strain-induced magnetoelastic anisotropy contribution. Additionally, we demonstrate that strain-induced magnetic anisotropy effectively shifts the switching field of the magnetostrictive Co layer, while keeping the switching field of the nearly zero-magnetostrictive Py layer unaffected due to its negligible magnetostriction. We argue that magnetostrictively optimized magnetic films in properly engineered multilayered structures can offer a path to enhancing the selective magnetic switching in spintronic devices.

Enhanced electric field control of magnetism in ternary BiFeO3-based ceramics

We report an unambiguous observation of a room temperature (RT) converse magnetoelectric effect (CME) in ternary BiFeO3-based systems near a morphotropic phase boundary (MPB). The results of in situ XRD diffraction at different applied electric fields reveal that the lattice distortion and phase transitions dominate the RT CME in the samples near the MPB. Our results provide an experimental proof and an explanation for the electric-field control of the magnetism effect obtained at the MPB, which may provide an effective way to design multiferroics for potential applications in magnetoelectric devices with low power consumption.

Charge disproportionation-induced multiferroics and electric field control of magnetism in a 2D MXene - Mo2NCl2.

Two-dimensional (2D) magnetoelectric multiferroic materials with the coexistence of magnetization and ferroelectric polarization hold potential for application for the development of next-generation nano-memory devices. However, intrinsic 2D multiferroics with a high critical temperature and strong magnetoelectric coupling are still rare to date. Here, we propose a novel mechanism of 2D monolayer multiferroicity. Based on density functional theory (DFT), we predicted that in a Mo2NCl2 monolayer, the non-equilibrium charge disproportionation of Mo ions will induce an out-of-plane electric polarization, making this material a 2D monolayer multiferroic material. More importantly, the magnetic critical temperature is calculated to be ∼168 K, which is larger than those of the recently reported 2D multiferroic and ferromagnetic systems. Our findings also provide a promising platform to control the magnetic properties and electric behavior in 2D multiferroics using an external electric field.

Room-temperature multiferroicity and magnetoelectric couplings in (Co0.75Al0.25)2(Fe0.75Mg0.25)O4 spinel films

The electric field manipulation of a magnetic order is a key feature of advanced information technologies and the development of room-temperature multiferroic magnetoelectrics remains an important task. In this work, we report novel single-phase magnetoelectric (ME) films consisting of a (Co0.75Al0.25)2(Fe0.75Mg0.25)O4 spinel ferrite. The (Co0.75Al0.25)2(Fe0.75Mg0.25)O4 thin films display a switchable polarization and magnetization with a remnant polarization of about 2.1 µC cm–2 and a remnant magnetization of about 82.0 emu cm–3 at 300 K. Electric field control of magnetism is detected, the magnetization modulation reaches 8.5 % at room temperature with an electric field of 500 kV cm−1, revealing the existence of magnetoelectric coupling. We believe that the substitutions of Al3+ and Mg2+ cations at the spinel sublattices might induce local distortions and local electric field and modulate the superexchange interactions between magnetic ions, which give rise to the ferroelectricity and ME effect in the (Co0.75Al0.25)2(Fe0.75Mg0.25)O4 thin films. The electric field-induced charge modulation may also contribute to the observed magnetoelectric effect, which likely results from the migration and redistribution of oxygen vacancies in the prepared nanofilms. The findings of this work can stimulate research studies on the development of room temperature multiferroics and magnetoelectrics based on the spinel ferrite compounds.

Manipulation of magnetism based on Li+ and H+ ions migration in MgFe2O4 film under electric field at room temperature

Electric-field control of magnetism has attracted much attention in the field of information storage and spintronics. Based on Li+ and H+ ions migration under electric field, the manipulation of magnetic properties in MgFe2O4 films has the advantage of non-volatility, reversibility and cyclicity. This work shows that the magnetism and coercivity are adjusted by the migration of alkali metal ions under electric field at 300 K, which shows great future potential for applications.

A comparative study of electrochemical and electrostatic doping modulation of magnetism in Fe3O4 via ultracapacitor structure

Electric field control of magnetism can boost energy efficiency and have brought revolutionary breakthroughs in the development of widespread applications in spintronics. Electrolyte gating plays an important role in magnetism modulation. In this work, reversible room-temperature electric field control of saturation magnetization in Fe3O4 via a supercapacitor structure is demonstrated with three types of traditional gate electrolytes for comparison. Different magnetization response and responsible mechanisms are revealed by Operando magnetometry PPMS/VSM and XPS characterization. The main mechanism in Na2SO4, KOH aqueous electrolytes is electrochemical effect, while both electrochemical and electrostatic effects were found in LiPF6 organic electrolyte. This work offers a kind of reference basis for selecting appropriate electrolyte in magnetism modulation by electrolyte-gating in the future, meanwhile, paves its way towards practical use in magneto-electric actuation, voltage-assisted magnetic storage, facilitating the development of high-performance spintronic devices.

Chirality‐Dependent Magnetoelectric Responses in a Magnetic‐Field‐Induced Ferroelectric Phase of Pb(TiO)Cu4(PO4)4

AbstractMagnetoelectric multiferroic materials can exhibit a variety of functional properties such as electric field control of magnetization and nonreciprocal electromagnetic responses. Such a magnetoelectric response may be further enriched by the combination of the magnetoelectric order and a peculiar crystallographic order, such as crystal chirality. Recently, it was reported that a chiral‐lattice magnet Pb(TiO)Cu4(PO4)4 showing a magnetoelectric quadrupole order in its ground state exhibits anomalous chirality‐induced tilt of magnetization vector with respect to an applied magnetic field. In this progress report, additional results that advance the understanding of chirality‐induced tilt of magnetization vector are presented. It is found that chirality‐induced tilt of the magnetization vector also exists in a magnetic‐field‐induced ferroelectric (FI‐FE) phase of this compound that is stabilized in magnetic fields higher than 16 tesla. The resulting transverse component of the magnetization can be switched with an applied electric field through a polarization reversal. The analysis indicates that this transverse component is as large as ≈0.014 μB per f.u, suggesting that the tilting angle of the magnetization in the FI‐FE phase is much larger than that in the low‐field phase. Also, as another research progress, electric field control of nonreciprocal directional dichroism in the FI‐FE phase is demonstrated.

Electric Field Control of Magnetism of a Mn Dimer Supported on a Carbon-Doped h-BN Surface

Using density functional theory we show that the interaction between two Mn atoms can be tuned from anti-ferromagnetic (AFM) to ferromagnetic (FM) state by creating charge disproportion between the two on a 2D surface. The non-metallic planar heterostructures, the 2D surface, in our work is designed by doping carbon hexagon rings in a hexagonal boron nitride (h-BN) sheet. In addition, we show that an external electric field can be used to control the charge disproportion and hence the magnetism. In fact, our calculations demonstrate that the magnetic states of the dimer can be switched from AFM to FM or vice versa in an external electric field. The origin of this magnetic switching is explained using the charge transfer from (or to) the Mn dimer to (or from) the 2D material. The switching between anti-ferromagnetic to ferromagnetic states can be useful for future spintronic applications.

Low voltage control of magnetism in BaFe10.2Sc1.8O19/BaTiO3 bilayer epitaxial thin film at temperatures up to 390 K

Electric field control of magnetism (EFCM) at low voltage (≤5 V) and high temperature (≥353 K) is crucial to micro-integrated magnetoelectric devices. In this work, the BaFe10.2Sc1.8O19 (BFSO)/BaTiO3(BTO) bilayer epitaxial thin films are fabricated. Results show that compared to the single BFSO film, there are significant increases in magnetic susceptibility, multiferroic transition temperature (Tcone), and EFCM in BFSO/BTO bilayer films. The room temperature magnetoelectric coupling coefficient in BFSO (80 nm)/BTO (300 nm) bilayer films (189.6 ns/m) is 14.7 times higher than that in the single layer BFSO film and 345 times larger than single crystalline BiFeO3. A change in magnetization ΔM% about 38% at 20 K and 7.1% at 390 K is obtained in the BFSO (80 nm)/BTO (300 nm) bilayer film. Moreover, repeatable low voltage (≤4 V) EFCM with a high signal-to-noise ratio in the BFSO/BTO bilayer film device is verified at temperatures ranging from 20 K to above 390 K. This high temperature EFCM is mainly contributed by the high Tcone of BFSO and strong piezoelectric/magnetostrictive coupling at the BFSO/BTO interface. The above findings enable the potential usage and integration of BFSO/BTO bilayer films into micro-integrated microwave devices.

Materials for a Sustainable Microelectronics Future: Electric Field Control of Magnetism with Multiferroics.

This article is written on behalf of many colleagues, collaborators, and researchers in the field of complex oxides as well as current and former students and postdocs who continue to enable and undertake cutting-edge research in the field of multiferroics, magnetoelectrics, and the pursuit of electric-field control of magnetism. What I present is something that is extremely exciting from both a fundamental science and applications perspective and has the potential to revolutionize our world, particularly from a sustainability perspective. To realize this potential will require numerous new innovations, both in the fundamental science arena as well as translating these scientific discoveries into real applications. Thus, this article will attempt to bridge the gap between fundamental materials physics and the actual manifestations of the physical concepts into real-life applications. I hope this article will help spur more translational research within the broad materials community.