Effusion Cell Research Articles

Malignant pleural effusion cell blocks are reliable resources for PD-L1 analysis in advanced lung adenocarcinomas: a concordance study with matched histologic samples.

In lung cancer patients presenting with malignant pleural effusion (MPE), cytology might represent the only source of tumor tissue for diagnosis and predictive biomarker testing. Programmed death ligand 1 (PD-L1) expression in tumor cells is a predictive biomarker for immunotherapy in non-small cell lung carcinomas and is tested using immunohistochemistry. However, knowledge of the validity of PD-L1 testing on MPE samples is limited. We evaluated the feasibility of immunocytochemistry (ICC) for PD-L1 in MPE cell blocks (CBs) and assessed the concordance in expression with patient-matched histologic samples. ICC for PD-L1 was performed on formalin-fixed paraffin-embedded CBs of MPE and patient-matched histologic samples, if available, using the automated Ventana PD-L1 SP263 assay. The tumor proportion score (TPS), based on partial or complete membranous tumor cell staining, was categorized as negative (<1%), low (≥1% to <50%), and high (≥50%). In CBs with any degree of PD-L1 expression, ICC for CD163 highlighting macrophages was performed to exclude nonspecific PD-L1 expression in macrophages. The CB PD-L1 TPS was compared with the TPS obtained from the patient-matched histologic samples. Of 43 MPE CBs available, 25 were positive for PD-L1 (25 of 42; 59%), and 1 sample was inadequate. Of the 11 patient-matched histologic samples tested, the PD-L1 TPS categories were concordant for 10 of the 11 (91% concordance) cases. PD-L1 expression in MPE CBs showed good concordance with expression in histologic samples and is feasible as a source for PD-L1 testing. The concurrent use of CD163 immunostains will aid in the manual assessment of PD-L1 TPS.

Controlled Si doping of β -Ga2O3 by molecular beam epitaxy

We report controlled silicon doping of Ga2O3 grown in plasma-assisted molecular beam epitaxy. Adding an endplate to the Si effusion cell enables the control of the mobile carrier density, leading to over 5-orders of magnitude change in the electrical resistivity. Room temperature mobilities >100 cm2/V s are achieved, with a peak value >125 cm2/V s at a doping density of low-1017/cm3. Temperature-dependent Hall effect measurements exhibit carrier freeze out for samples doped below the Mott criterion. A mobility of 390 cm2/V s is observed at 97 K.

A velocity map imaging spectrometer for measuring absolute differential cross sections for ion-induced electron emission from molecules.

In this paper, we present a newly developed crossed beam experimental setup that utilizes the velocity map imaging (VMI) technique to simultaneously measure both the kinetic energy and emission angle of electrons emitted from atoms or molecules upon ion collision. The projectile ion beam with keV to MeV kinetic energy orthogonally crosses the neutral target beam produced by an effusion cell. The emitted electrons are extracted and analyzed by a multi-electrode VMI spectrometer. By monitoring the target density, the projectile ion beam intensity, and the beams' overlap, we are able to measure absolute differential cross sections for collision-induced electron emission from molecules. The characterization of the setup and the methodology will be presented as well as first results for electron emission from uracil upon 0.98 MeV/u 12C4+ collision.

A Knudsen cell approach for the molecular beam epitaxy of the heavy fermion compound YbRh[formula omitted]Si[formula omitted

Thin films of the heavy fermion compound YbRh2Si2 were grown by molecular beam epitaxy on Ge (001) substrates using effusion cells. As-grown YbRh2Si2 thin films were characterized by a wide range of characterization techniques. X-ray diffraction yields a set of (00l) peaks, demonstrating epitaxial growth along the crystallographic c direction, with a lattice parameter c ranging from 9.84Å–9.95Å. The electrical resistivity shows behavior similar to YbRh2Si2 films grown previously using electron-beam evaporators for Rh and Si. The most stoichiometric sample appears to have the highest quality: It has the highest intensity ratio of the YbRh2Si2 (004) diffraction peak to the Ge (004) peak, the highest R(10 K)/R(2.3 K) ratio, a smallest surface roughness, and only a small density of surface defects.

Toward controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to β -Ga2O3

The oxidation-related issues in controlling Si doping from the Si source material in oxide molecular beam epitaxy (MBE) are addressed by using its solid suboxide, SiO, as an alternative source material in a conventional effusion cell. Line-of-sight quadrupole mass spectrometry of the direct SiO-flux (ΦSiO) from the source at different temperatures (TSiO) confirmed SiO molecules to sublime with an activation energy of 3.3 eV. The TSiO-dependent ΦSiO was measured in vacuum before and after subjecting the source material to an O2-background of 10−5 mbar (typical oxide MBE regime). The absence of a significant ΦSiO difference indicates negligible source oxidation in molecular O2. Mounted in an oxygen plasma-assisted MBE, Si-doped β-Ga2O3 layers were grown using this source. The ΦSiO at the substrate was evaluated [from 2.9 × 109 cm−2 s−1 (TSiO = 700 °C) to 5.5 × 1013 cm−2 s−1 (TSiO = 1000 °C)] and Si-concentration in the β-Ga2O3 layers measured by secondary ion mass spectrometry highlighting unprecedented control of continuous Si-doping for oxide MBE, i.e., NSi from 4 × 1017 cm−3 (TSiO = 700 °C) up to 1.7 × 1020 cm−3 (TSiO = 900 °C). For a homoepitaxial β-Ga2O3 layer, a Hall charge carrier concentration of 3 × 1019 cm−3 in line with the provided ΦSiO (TSiO = 800 °C) is demonstrated. No SiO-incorporation difference was found between β-Ga2O3(010) layers homoepitaxially grown at 750 °C and β-Ga2O3(−201) heteroepitaxial layers grown at 550 °C on c-plane sapphire. However, the presence of activated oxygen (plasma) resulted in partial source oxidation and related decrease in doping concentration (particularly at TSiO < 800 °C), which has been tentatively explained with a simple model. Degassing the source at 1100 °C reverted this oxidation. Concepts to reduce source oxidation during MBE-growth are referenced.

A Case of Pneumonia Masking Pleural Malignancy

The invasion of the pleural membrane by a malignant pleural tumor can lead to the production of malignant pleural effusion (MPE), resulting in the symptoms of dyspnea, and some patients have cough, sputum and other symptoms, which are easily confused with pneumonia. In this case, the initial diagnosis of the patient is pneumonia, and the final diagnosis is pneumonia combined with pleural malignancy. Therefore, if the patient has unexplained symptoms of bloody pleural effusion, it is necessary to examine for malignant tumors and should actively perform thoracentesis and drainage, look for malignant cells in the pleural effusion cell precipitation, evaluate the nature of pleural effusion, conduct pleural biopsy tissue examination, and determine the type and source of lung malignancy by the combined application of cell block technology and immunohistochemistry. Take the cytological examination results in pleural effusion seriously, and finally, surgical or immunotherapy can be performed.

Development of system to grow ZnO films by plasma assisted reactive evaporation with improved thickness homogeneity for using in solar cells

This paper focuses on the development and evaluation of an automated system for the deposition of ZnO thin films with suitable properties to be used in solar cells, using the plasma assisted reactive evaporation (PARE) method. A description is made of both the electronic system developed and the Zn evaporation source implemented with a novel design based on the effusion cell concept. This development made it possible to significantly improve both the low reproducibility of the optoelectric properties and the inhomogeneity of the thickness of the ZnO films that were deposited using a previous version of the PARE system developed.The improvement of thickness homogeneity and the applicability of the ZnO thin films for use in solar cells was verified through measurements of the thickness, spectral transmittance and electrical resistivity of samples deposited on 5 × 4 cm2 glass substrates. By optimizing the preparation parameters, it was possible to deposit thin ZnO films with improved thickness homogeneity, characterized by having resistivities varying between 9.5 × 10−4 Ωcm (n+-ZnO) and 2 × 104 Ωcm (i-ZnO) and transmittances greater than 85% (in the visible region). The structural, optical and morphological properties of the ZnO films were studied by different techniques.

Vaporization and thermodynamic properties of the SrO-Al2 O3 system studied by Knudsen effusion mass spectrometry.

Strontium aluminates can be used as refractory construction materials at temperatures up to 2000°С or as the materials for immobilization of long-lived radioactive waste. The SrО-Al2 O3 system is one of the more complicated oxide systems used for the creation of new radio-transparent materials. The exploitation of such materials at high temperatures demands the knowledge of the thermal stability of the compounds and solid solutions formed in the SrО-Al2 O3 system. The synthesis of the samples in the SrO-Al2 O3 system was carried out by a ceramic method at 1250°C. The characterization of the samples was accomplished with the use of X-ray diffraction (XRD). The vaporization of the samples under study was performed from a twin tungsten effusion cell using the Knudsen effusion mass spectrometry method. The temperature dependences of partial pressures of vapor species over 4SrO·Al2 O3 , 3SrO·Al2 O3 , SrO·Al2 O3 , SrO·2Al2 O3 and SrO·6Al2 O3 in a wide range of temperatures were determined. The component activities, the Gibbs energies of mixing and the standard enthalpies of individual strontium aluminates were obtained. The thermodynamic properties of the SrO-Al2 O3 system at high temperatures are characterized by negative deviation from ideality. The vaporization processes and thermodynamic properties of the SrO-Al2 O3 system were obtained for the first time.

Gom1 Mutant Mice as a Model of Otitis Media.

Otitis media (OM) disease is a common cause of hearing loss that is primarily the result of middle ear infection. At present, our understanding of the mechanisms leading to OM is limited due to the lack of animal models of OM with effusion (OME). Here, we report that the mice with genetic otitis media one (gom1) mutants are prone to OM. gom1 Mice were produced by the N-ethyl-N-nitrosourea (ENU) mutagenesis program as an animal model to study OM. These mice demonstrate many common features of OM, such as middle ear effusion and hearing impairment. We revealed that gom1 mice display various signs of middle ear and inner ear dysfunctions, including elevated thresholds of auditory-evoked brainstem response (ABR) and lack of cochlear microphonic responses. Decreased compliance intympanometrymeasurements indicates tympanic membrane and ossicular chain malfunction. We confirmed through histological examinations of middle ear structures that 34/34 (100 %) of the mutant mice suffered from severe OME. While individual ears had different levels of effusion and inflammatory cells in the middle ear cavity, all had thickened middle ear mucosa and submucosa compared to control mice (B6). Moreover, the mutant mice displayed cochlear hair cell loss. These observations also suggested the craniofacial abnormalities in the gom1 mouse model. Together, these results indicate that gom1 mice could be valuable for investigating the genetic contribution to the development of middle ear disease.

High-temperature mass spectrometric study of the thermodynamic properties in the Sm2 O3 -ZrO2 -HfO2 system.

The Sm2 O3 -ZrO2 -HfO2 system is a promising base for the development of a wide spectrum of new refractory materials. Reliable data on thermodynamic properties in this system are of significant importance for planning the preparation and application of high-temperature ceramics. Especially, they can be useful for calculation of the unknown phase equilibria in this system. The thermodynamic properties of the Sm2 O3 -ZrO2 -HfO2 system were studied by the high-temperature mass spectrometric method. The samples in the system under consideration synthesized by the solid-state method were vaporized from a tungsten twin effusion cell using a MS-1301 magnetic sector mass spectrometer. Ionization of the vapor species effusing from the cell was carried out by electrons at an energy of 25 eV. It was shown that, at temperatures below 2500 K, the main vapor species over the ceramics based on the Sm2 O3 -ZrO2 -HfO2 system were SmO, Sm, and O corresponding to vapor composition over pure Sm2 O3 . The SmO, Sm, and O partial vapor pressures over the samples and the Sm2 O3 activities were obtained in the temperature range 2319-2530 K. This allowed the excess Gibbs energy values to be determined. For comparison, the excess Gibbs energies in the Sm2 O3 -ZrO2 -HfO2 system were also calculated by the semi-empirical Kohler, Toop, Redlich-Kister, and Wilson methods and optimized by the statistical thermodynamic Generalized Lattice Theory of Associated Solutions (GLTAS). The thermodynamic data calculated by the semi-empirical approaches at 2423 K were shown to be lower than the experimental values. However, the Toop and Wilson methods were found to be useful for evaluation of the excess Gibbs energy values at the Sm2 O3 mole fraction less and higher than 0.32, respectively. The self-consistent thermodynamic description of the Sm2 O3 -ZrO2 -HfO2 system was derived at high temperatures by optimization of the experimental results using the GLTAS.

Thermodynamics of heterogeneous equilibria in the In-In2 O3 system using Knudsen effusion mass spectrometry.

The In-In2 O3 system is regarded as a potential low-temperature source of gaseous indium oxide (In2 O) when obtaining functional materials by physical vapor deposition techniques. To date the vaporization thermodynamics of the system have been investigated in few studies, the results of which are contradictory. The study of the In-In2 O3 system was performed using Knudsen effusion mass spectrometry in the temperature range 930-1210 K, with a magnet mass spectrometer (MS-1301). Quartz effusion cells heated by a resistance furnace were employed. It was established that In(g) and In2 O(g) are the major vapor species over heterogeneous mixtures (In(l) + In2 O3 (s)) and the gaseous oxide In2 O is predominant. The partial pressures of the vapor species were determined and the quantitative vapor composition was calculated. Based on the experimental data, a p-x section of the In-In2 O3 system phase diagram at 1060 K was constructed. The standard enthalpies of reactions accompanying vaporization of the In and In2 O3 mixtures were evaluated using the second- and third-law methods. The standard enthalpy of formation of In2 O(g) was derived from the enthalpies of reactions obtained. The predominance of In2 O in the equilibrium vapor over heterogeneous mixtures (In(l) + In2 O3 (s)), along with its high partial pressure at relatively low temperatures, substantiate the In-In2 O3 system to be suitable for physical vapor deposition methods. The obtained results can be used for physical vapor deposition parameter adjustment and optimization. The standard enthalpy of formation of In2 O(g) obtained in an independent way in the present work is in good agreement with that from our previous In2 O3 (s) vaporization study.

Nucleation, growth, and stability of WSe2 thin films deposited on HOPG examined using in situ, real-time synchrotron x-ray radiation

We have examined the nucleation and growth of WSe2 thin films in ultrahigh vacuum on highly oriented pyrolytic graphite (HOPG) using in situ real-time x-ray fluorescence (XRF), and ex situ x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy, and atomic force microscopy. We employed W(CO)6 as the W source delivered via a supersonic molecular beam, Sen delivered via an effusion cell, and we examined substrate temperatures from 400 to 540 °C. Crystalline, near stoichiometric thin films were formed at temperatures Ts ≤ 470 °C, whereas those formed at 540 °C were very W-rich. The thin films were not continuous but consisted of filamentlike features with spikelike edges. A focus of our work was to examine the initial stages of growth and the effects of extinguishing one of the species (W or Se) both before and during growth. First, in all cases examined, there was a delay in the onset of a measurable rate of growth on the clean HOPG surface following the introduction of both species, W(CO)6 and Sen. In cases where the incident flux of W(CO)6 was gated, once WSe2 growth had commenced, extinguishing the flux of W(CO)6 quenched growth immediately and did not result in the deposition of additional Se. Once the incident flux of W(CO)6 was re-started, growth began essentially immediately. The pattern with Sen gating was strikingly different. In this case, once WSe2 growth had commenced, extinguishing the flux of Sen resulted in a continuing uptake of W essentially unabated, while the amount of Se in the thin film decreased, which resulted in an oscillation in the Se-to-W content in the thin film. As the thin films were stable in UHV in the absence of both species, the incident W(CO)6 is responsible for the etching of Se, which we postulate is due to a ligand exchange reaction forming volatile SeCO.

Growth defects in GeSn/Ge/Si(001) epitaxial layers grown by hot wire chemical vapor deposition of Ge with co-evaporation of Sn

We report on the investigation of the growth defect formation in the GeSn/Ge/Si(001) epitaxial layers grown by hot wire chemical vapor deposition of Ge with simultaneous co-evaporation of Sn from an effusion cell. The nucleation of α-Sn nanoinclusions in the course of the growth process was found to be the main mechanism of elastic strain relaxation in the Ge1-xSnx epitaxial layers at x>2.5% as opposed to the misfit dislocation formation at the GeSn/Ge interfaces. Also, β-Sn nanoislands nucleating on the surface of the GeSn epitaxial layers with increased Sn concentration due to Sn segregation were identified by confocal Raman microscopy.

P68.05 Human Lung Carcinoma Primary Cultures From Malignant Pleural Effusions as a Tool for Drug Screening and Personalized Therapy

In recent years, new therapies have increased the number of treatment options available to the oncologist. However, the type and duration of response is still unpredictable in a significant number of patients and drug testing of patient-derived tumor cells can have clinical utility in this setting. A significant percentage of lung cancer (LC) patients show pleural effusion and viable malignant cells can be found in this fluid. Here, we present the results of the implementation of routine primary culture and drug testing from pleural effusions.

Comparison of effusion cell block and biopsy immunohistochemistry in mesothelial hyperplasia, mesothelioma, and carcinoma in dogs.

Determining the cause of effusions is challenging and might require a biopsy. Whether cell blocks from effusions are representative of biopsies requires investigation. A previously developed immunohistochemical panel aids in the differentiation of hyperplastic and neoplastic mesothelium in canine biopsies but has not been investigated in effusions. The study aimed to assess cell blocks as an alternative to biopsies and determine whether immunohistochemistry helps distinguish hyperplastic mesothelium, mesothelioma, and carcinoma. Effusions and biopsies were collected from five dogs with mesothelial hyperplasia (group MH), six with mesothelioma (group M), and five with carcinoma (group C). Immunohistochemistry (IHC) for cytokeratin, vimentin, Wilm's tumor protein 1 (WT1), desmin, glucose transporter 1 (GLUT1), and insulin-like growth factor II mRNA-binding protein 3 (IMP3) was performed. Sections were scored for staining intensity and the percentage of positively stained cells. In paired cell blocks and biopsies, vimentin and WT1 staining were positively correlated for intensity and the percentage of positive cells, although not all paired results were identical. The intensity of IMP3 staining in cell blocks was higher in group M than in group C (P=0.012), and WT1 staining was higher in group MH than in group C (P=0.020). For biopsies, the intensity of WT1 staining was higher in group MH than in group C (P=0.031). In group C, WT1 was negative in all cell blocks and biopsies, and desmin was negative in four of five cases. IHC results for the cell blocks and biopsies were comparable for potentially useful markers, such as WT1, which helped discriminate between groups. IHC provided additional information, although results were not always definitive. Further studies on a larger population are required.

ДОСЛІДЖЕННЯ СПЕКТРУ АТОМІВ Zn I В ТРИПЛЕТНИХ РІДБЕРГІВСЬКИХ СТАНАХ

Purpose: This work aims at investigating the zinc atoms in the triplet preionization – Rydberg states. The energy levels of atoms having two electrons outside the closed shell were studied mainly by the optical spectroscopy methods. However, just using the microwave spectroscopy to measure the frequency of transitions between the two Rydberg states allows to increase the accuracy of measurements in two or more orders of magnitude. Disign/methodology/approach:A line of three dye lasers is used to excite the zinc atoms into the triplet Rydberg states with a predetermined set of quantum numbers. The radiation of the first two of them is transformed into the second harmonic in nonlinear crystals. Dye lasers are excited by the radiation of the second harmonic of one YAG: ND3+ laser. All three radiations are reduced to the zone of interaction with the laser and the microwave radiation, which is located between the plates of the ionization cell, where the pulsed electric field is created. The excited Rydberg atoms are recorded with the field ionization procedure. The beam of neutral atoms is created by an effusion cell under the vacuum conditions, the residual pressure does not exceed 10-5 mm Hg. A pulsed electric field of some certain intensity results inionization of atoms excited by microwave radiation and in acceleration of electrons, which have appeared in the direction of the secondary electron multiplier, though being insufficient for ionization of atoms excited only by the laser radiation and which are initial for interaction with microwaves. By scanning the microwave radiation frequency with the given step and measuring the signal intensity of the secondary electron multiplier, the excitation spectrum of the atoms under study can be obtained. Findings: Using the created laser-microwave spectrometer, the frequencies of the F→D, F→F and F→G transitions between the triplet Rydberg states of zinc atoms were measured. From the analysis made of the transition frequencies, the quantum defect decomposition constants were obtained by the Ritz formula for the D, F, and G states of zinc atoms. Conclusions: The frequencies of the F→D, F→F and F→G transitions between the triplet Rydberg states of zinc atoms were measured that allowed obtaining the quantum defect decomposition constants according to the Ritz formula for the D, F and G states of zinc atoms, that in turn had allowed to calculate the energy of these terms and the transition frequencies at least in two orders of magnitude more accurately as against the similar measurements made by the optical spectroscopy. Key words: zinc atom, triplet states of atoms, Rydberg states, laser excitation, microwave radiation

Usefulness of neutrophil-to-lymphocyte ratio for predicting acute pericarditis outcomes

Background In daily practice, C-reactive protein (CRP) may be used to predict recurrence and treatment response in patients with acute pericarditis; however, the predictive role of CRP might be insufficient for clinical prediction in some patients. In this study, we aimed to investigate the relationship between neutrophil-to-lymphocyte ratio (NLR) and the composite endpoint of pericarditis recurrence and/or tamponade within 1 year in patients with acute pericarditis. Methods A total of 104 patients diagnosed with acute idiopathic pericarditis (mean age 42.8 ± 15.2 years, 55.8% male) were included in the study. Physical examination findings of these patients, electrocardiography, echocardiography, chest X-ray and laboratory findings were evaluated and analysed. During the 1-year follow-up, the composite of cardiac tamponade and/or pericarditis recurrence was investigated as the primary endpoint of the study. Results Compared to the group without the composite outcome, the group with the composite outcome had significantly higher rates of moderate and severe pericardial effusion (p < 0.01) and higher white blood cell (WBC) count (p:0.001), platelet count (p = 0.003), NLR (2.14 (1.49–3.02) vs 6.60 (5.50–8.68); p < 0.001) and high-sensitivity C-reactive protein (hs-CRP) (8.01 (5.1–24.5 vs 69.5 (40.8–128); p:0.001). Higher hs-CRP (p < 0.001), WBC (p:0.001), NLR (p < 0.001) and platelets (p:0.02) were associated with pericarditis recurrence. NLR and hs-CRP were independently associated with the composite endpoint (p < 0.001 and p < 0.001, respectively). Conclusion NLR and hs-CRP were found to be independent predictors for the composite endpoint of tamponade and/or recurrence in acute pericarditis patients during the 1-year follow-up. Similar to hs-CRP, NLR may also be used for risk assessment in patients with idiopathic pericarditis.

Precise control of time-varying effusion cell flux in molecular beam epitaxy

We outline a method to control time-varying effusion cell flux in molecular beam epitaxy. This can be used to grow 2D nanostructures with precise continuously graded alloys, and we explore the specific case of controlling an Al cell for the growth of continuously graded Al xGa 1 − xAs parabolic quantum wells. We develop a simple model of the Al cell’s thermal dynamics, including the effects of shutter transients. This model’s parameters can be empirically derived using a beam flux monitoring ion gauge. Though simple, this model can already be used to generate near-arbitrary time-varying fluxes (within the physical limits of the cell). For growths that require higher precision than the simple model can achieve, we introduce an iterative correction scheme to eliminate any lingering errors. Using this method, we control the composition in a 3 THz Al xGa 1 − xAs parabolic quantum well array to a root mean squared error of just ± 0.18 %Al. This accuracy is achieved at the standard growth rates necessary for thick structures (0.15–0.25 nm/s). The approach is quite generally applicable to other composition profiles or other situations where time-dependent flux control is necessary, and it could be extended to other effusion cells.

Vaporization thermodynamics of In2 O3 by Knudsen effusion mass spectrometry. The standard enthalpy of formation of In2 O(g).

In2 O3 is one of the most important semiconductor oxides in modern electronics. Vacuum deposition methods are often used for the preparation of In2 O3 -based nanomaterials. Thus, vaporization thermodynamics is of key importance for process control and optimization. Since the literature data on the vapor composition and partial pressure values for In2 O3 are contradictory, vaporization thermodynamics of In2 O3 needs to be clarified. Vaporization behavior of In2 O3 was studied using the Knudsen effusion technique in the temperature range 1400-1610 K. Quartz effusion cells were employed. A magnet mass spectrometer with an ordinary focus and a sector-type analyzer was used. Heating of samples and molecular beam ionization were performed by electron impact. The operating ionizing electron energy was 75 eV. A specially designed experiment allowed us to determine the individual mass spectrum of the In2 O molecule and, thus, to interpret the mass spectrum of the vapor registered during In2 O3 vaporization. The composition of the equilibrium vapor was quantified and the partial pressures of the vapor species were determined. On the basis of the experimental data, the standard enthalpies of some gaseous and heterogeneous reactions taking place during In2 O3 vaporization and the standard enthalpy of formation of In2 O(g) were calculated. The presence of In species in the vapor over In2 O3 was confirmed and the vapor composition was quantified. Thermodynamic characteristics of In2 O3 vaporization were obtained and a value of the standard enthalpy of formation of In2 O(g) was recommended. These data can be used for further thermodynamic calculations and for evaluating parameters for the synthesis and exploitation of In2 O3 -containing materials.

Relative Expression of Voltage‐Gated Sodium Channels in Cancerous and Noncancerous Cells during the Cell Cycle

Upregulation of voltage gated sodium channels (VGSCs) is the target for many novel carcinoma therapies. The majority carcinomas over-express voltage gated sodium channels, including breast cancers, lung cancers and mesotheliomas. We found variability in VGSC expression in clonal cancer cell lines. There is some limited electrophysiologic evidence that there is an upregulation of VGSCs during cell division. We hypothesized that the doubling of DNA during the cell cycle would also double the cell surface expression of VGSC protein compared to nondividing cells. We tested this hypothesis using flow cytometry with the fluorescent DNA label, propidium iodide and a conjugated panspecific-VGSC antibody. For lung cells, we compared A549 lung cancer cells with MRC5 control cell line and KLN 205 mouse cancer line. We compared H28 mesothelioma cells with MeT-5a normal pleural effusion cells and AB1 mouse mesothelioma cells. For breast cancer, we compared MDA-MB 231 breast cancer cells, MCF 10a control cells, and 4T1 mouse breast cancer cells. We found that, amoungst all the cell lines, there is between 1.86 and 2.15 more VGSCs expressed in dividing cells than in nondividing cells. Additionally, in cells imaged with confoccal microscopy, VGSCs were also shown in abundance at the leading ends of cells in anaphase. With this information we can more effectively target novel cancer therapies and thus improve the efficacy in carcinomas that overexpress VGSCs.