Spin-orbit Torque Efficiency Research Articles

Giant Hall Switching by Surface‐State‐Mediated Spin‐Orbit Torque in a Hard Ferromagnetic Topological Insulator

AbstractTopological insulators (TI) and magnetic topological insulators (MTI) can apply highly efficient spin‐orbit torque (SOT) and manipulate the magnetization with their unique topological surface states (TSS) with ultrahigh efficiency. Here, efficient SOT switching of a hard MTI, V‐doped (Bi,Sb)2Te3 (VBST), with a large coercive field that can prevent the influence of an external magnetic field, is demonstrated. A giant switched anomalous Hall resistance of 9.2 kΩ is realized, among the largest of all SOT systems, which makes the Hall channel a good readout and eliminates the need to fabricate complicated magnetic tunnel junction (MTJ) structures. The SOT switching current density can be reduced to 2.8 × 105 A cm−2, indicating its high efficiency. Moreover, as the Fermi level is moved away from the Dirac point by both gate and composition tuning, VBST exhibits a transition from edge‐state‐mediated to surface‐state‐mediated transport, thus enhancing the SOT effective field to (1.56 ± 0.12) × 10−6 T A−1 cm2 and the interfacial charge‐to‐spin conversion efficiency to 3.9 ± 0.3 nm−1. The findings establish VBST as an extraordinary candidate for energy‐efficient magnetic memory devices.

Swift heavy ion irradiation-induced enhancement of spin–orbit torque efficiency in Pt/Co/Ta trilayers

Increasing the efficiency of spin–orbit torque (SOT) is of great interest in applications for magnetic random access memory and logic devices due to decreased energy consumption. Here, we present that the SOT efficiency of Pt/Co/Ta films with perpendicular magnetic anisotropy can be improved by swift high-energy heavy Fe11+ ion irradiation, which is an effective method to alter crystallinity, interface roughness, and defects in ferromagnet/heavy metal heterostructures. Specifically, the Pt/Co/Ta films show an optimal SOT efficiency at ion fluence around 1.0 × 1013 ions/cm2 with the largest spin Hall angles reaching 0.59, which is the largest improvement of spin Hall angle by ion irradiation compared to previous studies using light ions. We demonstrate that the increase in SOT efficiency arises from structural changes in the Pt layer due to ion irradiation-induced damage effects at proper fluence, while the decrease in SOT efficiency is mainly attributed to the restoration of Pt crystallinity induced by beam-heating effects at high fluence. This work demonstrates that an appropriate ion irradiation process could improve the SOT efficiency and the spin Hall angle, thereby providing a way to develop future SOT-based spintronic devices.

Investigation of spin-orbit torque efficiency in CuBi alloys

Investigation of spin-orbit torque efficiency in CuBi alloys

Contributions of interfacial spin–orbit coupling to magnetic and spintronic properties in AuPt/ferromagnet bilayers

We investigate the relationships between various magnetic and spintronic properties within AuPt/ferromagnet (FM) bilayers (FM = CoFe, CoFeB, Py, and Co). A linear correlation between the volume and surface magnetic anisotropies is identified, potentially influenced by the magnetoelastic effect. The FM thickness dependence of the magnetic damping indicates that spin-memory loss due to the interfacial spin–orbit coupling (ISOC) and spin pumping to the heavy-metal layer contribute little to the damping. Instead, a notable contribution from two magnon scattering to the damping is recognized in AuPt/(Co, CoFe, CoFeB) bilayers, possibly originating from a magnetic inhomogeneity due to the ISOC. In addition, in contrast to the magnetic damping, spin–orbit-torque efficiencies are unlikely related to the ISOC in AuPt/FM systems. This work offers valuable insights into the correlations among magnetic and spintronic parameters arising from the interfaces, ultimately aiding in the advancement of magnetic memory and information processing systems.

Spin–orbit torque effect in silicon-based sputtered Mn3Sn film

Abstract Noncollinear antiferromagnet Mn3Sn has shown remarkable efficiency in charge–spin conversion, a novel magnetic spin Hall effect, and a stable topological antiferromagnetic state, which has resulted in great interest from researchers in the field of spin–orbit torque. Current research has primarily focused on the spin–orbit torque effect of epitaxially grown noncollinear antiferromagnet Mn3Sn films. However, this method is not suitable for large-scale industrial preparation. In this study, amorphous Mn3Sn films and Mn3Sn/Py heterostructures were prepared using magnetron sputtering on silicon substrates. The spin-torque ferromagnetic resonance measurement demonstrated that only the conventional spin–orbit torque effect generated by in-plane polarized spin currents existed in the Mn3Sn/Py heterostructure, with a spin–orbit torque efficiency of 0.016. Additionally, we prepared the perpendicular magnetized Mn3Sn/CoTb heterostructure based on amorphous Mn3Sn film, where the spin–orbit torque driven perpendicular magnetization switching was achieved with a lower critical switching current density (3.9×107 A/cm2) compared to Ta/CoTb heterostructure. This research reveals the spin–orbit torque effect of amorphous Mn3Sn films and establishes a foundation for further advancement in the practical application of Mn3Sn materials in spintronic devices.

Electric field control of spin-orbit torque in annealed Ta/CoFeB/HfO x heterostructures via interfacial oxidation modulation

Electric field control of spin-orbit torque (SOT) exhibits promising potential in advanced spintronic devices through interfacial modulation. In this work, we investigate the influence of electric field and interfacial oxidation on SOT efficiency in annealed Ta/CoFeB/HfO x heterostructures. By varying annealing temperatures, the damping-like SOT efficiency reaches its peak at the annealing temperature of 320 °C, with an 80% field-free magnetization switching ratio induced by SOT having been demonstrated. This enhancement is ascribed to the annealing-induced modulation of oxygen ion migration at the CoFeB/HfO x interface. By applying voltages across the Ta/CoFeB/HfO x heterostructures, which drives the O2‒ migration across the interface, a reversible, bipolar, and non-volatile modulation of SOT efficiency was observed. The collective influence of annealing temperature and electric field effects on SOT carried out in this work provides an effective approach into facilitating the optimization and control of SOT in spintronic devices.

Enhanced Spin-Orbit Torque Efficiency in Platinum-Gadolinium Oxide Nanocomposite Films.

Spin-orbit torque (SOT) has emerged as an effective means of manipulating magnetization. However, the current energy efficiency of SOT operation is inefficient due to low damping-like SOT efficiency per unit current bias. In this work, we dope conventional rare earth oxides, GdOy, into highly conductive platinum by magnetron sputtering to form a new group of spin Hall materials. A large damping-like spin-orbit torque (DL-SOT) efficiency of about 0.35 ± 0.013 is obtained in Pt0.70(GdOy)0.30 measured by the spin-torque ferromagnetic resonance (ST-FMR) technique, which is about five times that of pure Pt under the same conditions. The substantial enhancement of the spin Hall effect is revealed by theoretical analysis to be attributed to the strong side jump induced by the rare earth oxide GdOy impurities. Moreover, this large DL-SOT efficiency contributes to a low critical switching current density (8.0 × 106 A·cm-2 in the Pt0.70(GdOy)0.30 layer) in current-induced magnetization switching measurements. This systematic study on SOT switching properties suggests that Pt1-x(GdOy)x is an attractive spin current source with large DL-SOT efficiency for future SOT applications and provides another idea to regulate the spin Hall angle.

Large out-of-plane spin–orbit torque in topological Weyl semimetal TaIrTe4

The unique electronic properties of topological quantum materials, such as protected surface states and exotic quasiparticles, can provide an out-of-plane spin-polarized current needed for external field-free magnetization switching of magnets with perpendicular magnetic anisotropy. Conventional spin–orbit torque (SOT) materials provide only an in-plane spin-polarized current, and recently explored materials with lower crystal symmetries provide very low out-of-plane spin-polarized current components, which are not suitable for energy-efficient SOT applications. Here, we demonstrate a large out-of-plane damping-like SOT at room temperature using the topological Weyl semimetal candidate TaIrTe4 with a lower crystal symmetry. We performed spin–torque ferromagnetic resonance (STFMR) and second harmonic Hall measurements on devices based on TaIrTe4/Ni80Fe20 heterostructures and observed a large out-of-plane damping-like SOT efficiency. The out-of-plane spin Hall conductivity is estimated to be (4.05 ± 0.23)×104 (ℏ ⁄ 2e) (Ωm)−1, which is an order of magnitude higher than the reported values in other materials.

Field-Free Spin-Orbit Torque Magnetization Switching in a Single-Phase Ferromagnetic and Spin Hall Oxide.

Current-induced spin-orbit torque (SOT) offers substantial promise for the development of low-power, nonvolatile magnetic memory. Recently, a single-phase material concurrently exhibiting magnetism and the spin Hall effect has emerged as a scientifically and technologically interesting platform for realizing efficient and compact SOT systems. Here, we demonstrate external-magnetic-field-free switching of perpendicular magnetization in a single-phase ferromagnetic and spin Hall oxide SrRuO3. We delicately altered the local lattices of the top and bottom surface layers of SrRuO3, while retaining a quasi-homogeneous, single-crystalline nature of the SrRuO3 bulk. This leads to unbalanced spin Hall effects between the top and bottom layers, enabling net SOT performance within single-layer ferromagnetic SrRuO3. Notably, our SrRuO3 exhibits the highest SOT efficiency and lowest power consumption among all known single-layer systems under field-free conditions. Our method of artificially manipulating the local atomic structures will pave the way for advances in spin-orbitronics and the exploration of new SOT materials.

Field-free magnetization switching through large out-of-plane spin–orbit torque in the ferromagnetic CoPt single layers

Spin–orbit torque (SOT) induced magnetization switching in an energy-efficient and fast way has exhibited great application potential in next generation magnetic memories. However, a complicated layer structure is usually needed to break the mirror symmetry for achieving SOT induced field-free magnetization switching. Here, we report a sizeable field-free magnetization switching through large out-of-plane SOT in the chemically disordered A1-CoxPt100−x single layers within a Co composition range from 40 to 70. The largest absolute out-of-plane SOT efficiency is found at its equiatomic concentration (Co50Pt50), in which the absolute in-plane SOT efficiency also reaches the maximum value, 22.7 Oe/107 A cm−2. We further demonstrate that the symmetry dependence of field-free magnetization switching might arise from the chemically ordered L11-CoPt nano-scaled platelets formed during the sample deposition. We expect that the experimental identification of the field-free magnetization switching in the ferromagnetic CoPt single layer is desirable to simplify the applications of spin logic devices.

Giant Spin-Orbit Torque in Antiferromagnetic-Coupled Pt/[Co/Gd]N Multilayers with Suppressed Spin Dephasing and Robust Thermal Stability.

Manipulating magnetization via power-efficient spin-orbit torque (SOT) has garnered significant attention in the field of spin-based memory and logic devices. However, the damping-like SOT efficiency (ξDL) in heavy metal (HM)/ferromagnetic metal (FM) bilayers is relatively small due to the strong spin dephasing accompanied by additional spin polarization decay. Furthermore, the perpendicular magnetic anisotropy (PMA) originating from the HM/FM interface is constrained by the thickness of FM, which is unfavorable for thermal stability in practical applications. Consequently, it is valuable to develop systems that not only exhibit large ξDL but also balance thermal stability. In this work, we designed antiferromagnetic-coupled [Co/Gd]N multilayers, where staggered Co and Gd magnetic moments effectively suppress the spin dephasing and additional spin polarization decay. The ordered Co-Gd arrangements along the out-of-plane direction provide bulk PMA, endowing Pt/[Co/Gd]N high thermal stability. The SOT of Pt/[Co/Gd]N was systematically studied with N, demonstrating a significantly large ξDL of up to 0.66. The ξDL of Pt/[Co/Gd]N is greater than those of Pt/Co and Pt/ferrimagnetic alloys. This significant enhancement relies on the effective suppression of spin dephasing in [Co/Gd]N. Our work highlights that the antiferromagnetic-coupled [Co/Gd]N multilayer is a promising candidate for low-consumption and high-density spintronic devices.

Enhanced Spin–Orbit Torque Efficiency by the Insertion of a Thin NiO Underlayer in Pt/Co/Ta Films

Enhanced Spin–Orbit Torque Efficiency by the Insertion of a Thin NiO Underlayer in Pt/Co/Ta Films

Efficient magnetization switching induced by spin–orbit torque in perpendicularly magnetized Mn1+xCo2−xAl Heusler alloys

Perpendicularly magnetized Co-based Heusler alloys are promising candidates in high-performance spintronic devices. However, there is a contradiction between thermal stability and damping-like spin–orbit torque (SOT) efficiency in Co-based Heusler alloys with interface-induced perpendicular magnetic anisotropy (PMA). Here, we present epitaxially grown perpendicularly magnetized Mn1+xCo2−xAl (MCA) Heusler alloys through tetragonal distortion. Ferrimagnetism and distortion-induced PMA are obtained in MCA Heusler alloys. A large effective spin Hall angle (θeff) up to 0.33 is experimentally demonstrated in Pt/MCA bilayers, markedly surpassing that in conventional Pt/FM bilayers. Consequently, SOT-induced efficient magnetization switching is realized in Pt/MCA bilayers, with a critical switching current density (Jc) as low as 4 × 107 A/cm2. The large θeff and high SOT efficiency would be attributed to the staggered magnetic exchange torques in the ferrimagnetic MCA Heusler alloys. These findings demonstrate that perpendicularly magnetized ferrimagnetic MCA Heusler alloys are highly promising for high-density SOT-magnetic random-access memory with superior thermal stability and low power consumption.

Study on Anomalous Hall Effect and Spin-Orbit Torque Effect of TbCo-Based Multilayer Films.

The anomalous Hall effect and spin-orbit torque of TbCo-based multilayer films have been methodically studied in recent years. Many properties of the films can be obtained by the anomalous Hall resistance loops of the samples. We report on the effects of a structure composed of two heavy metals as the buffer layers on the anomalous Hall resistance loops of TbCo-based multilayers at different temperatures. The results showed that the coercivity increases dramatically with decreasing temperature, and the samples without perpendicular magnetic anisotropy at room temperature showed perpendicular magnetic anisotropy at low temperatures. We quantified the spin-orbit torque efficiency and Dzyaloshinskii-Moriya interaction effective field size of the films W/Pt/TbCo/Pt at room temperature by measuring the loop shift of anomalous Hall resistance. The results showed that the study of anomalous Hall resistance loops plays an important role in the study of spintronics, which can not only show the basic properties of the sample, but can also obtain other information about the sample through the shift of the loops.

Current-Induced Magnetization Switching Behavior in Perpendicular Magnetized L10-MnAl/B2-CoGa Bilayer

Rare-earth-free Mn-based binary alloy L10-MnAl with bulk perpendicular magnetic anisotropy (PMA) holds promise for high-performance magnetic random access memory (MRAM) devices driven by spin-orbit torque (SOT). However, the lattice-mismatch issue makes it challenging to place conventional spin current sources, such as heavy metals, between L10-MnAl layers and substrates. In this work, we propose a solution by using the B2-CoGa alloy as the spin current source. The lattice-matching enables high-quality epitaxial growth of 2-nm-thick L10-MnAl on B2-CoGa, and the L10-MnAl exhibits a large PMA constant of 1.04 × 106 J/m3. Subsequently, the considerable spin Hall effect in B2-CoGa enables the achievement of SOT-induced deterministic magnetization switching. Moreover, we quantitatively determine the SOT efficiency in the bilayer. Furthermore, we design an L10-MnAl/B2-CoGa/Co2MnGa structure to achieve field-free magnetic switching. Our results provide valuable insights for achieving high-performance SOT-MRAM devices based on L10-MnAl alloy.

Granular Magnetization Switching in Pt/Co/Ti Structure with HfOx Insertion for In-Memory Computing Applications.

Exploring multiple states based on the domain wall (DW) position has garnered increased attention for in-memory computing applications, particularly focusing on the utilization of spin-orbit torque (SOT) to drive DW motion. However, devices relying on the DW position require efficient DW pinning. Here, we achieve granular magnetization switching by incorporating an HfOx insertion layer between the Co/Ti interface. This corresponds to a transition in the switching model from the DW motion to DW nucleation. Compared to the conventional Pt/Co/Ti structure, incorporation of the HfOx layer results in an enhanced SOT efficiency and a lower switching current density. We also realized stable multistate storage and synaptic plasticity by applying pulse current in the Pt/Co/HfOx/Ti device. The simulation of artificial neural networks (ANN) based on the device can perform digital recognition tasks with an accuracy rate of 91%. These results identify that DW nucleation with a Pt/Co/HfOx/Ti based device has potential applications in multistate storage and ANN.

Field-Free Spin-Orbit Torque Magnetization Switching in a Perpendicularly Magnetized Semiconductor (Ga,Mn)As Single Layer.

Current-induced spin-orbit torque (SOT) in a perpendicularly magnetized single layer has a strong potential to switch the magnetization using an extremely low current density, which is generally 2-3 orders of magnitude smaller than that required for conventional metal bilayer systems. However, an in-plane external magnetic field has to be applied to break the symmetry and achieve deterministic switching. To further enhance the high-density integration and accelerate the practical application of highly efficient SOT magnetic random-access memory (SOT-MRAM) devices, field-free SOT magnetization switching in a ferromagnetic single layer is strongly needed. In a spin-orbit ferromagnet (a ferromagnet with strong spin-orbit interaction) with crystal inversion asymmetry and a multi-domain structure, the internal Dzyaloshinskii-Moriya effective fields are considered to induce field-free switching. Here, combined with strong spin-orbit coupling and a tilted anisotropy axis induced by a nonuniform Mn distribution and a possible magnetocrystalline anisotropy resulting from a slight substrate tilting, we successfully achieve magnetization switching in a spin-orbit ferromagnet (Ga,Mn)As single layer by utilizing SOT without applying any external magnetic field. Our findings help to deeply elucidate the SOT switching mechanism and can advance the development of a highly efficient MRAM with better scalability.

Interfacial Modulation of Spin-Orbit Torques Induced by Two-Dimensional van der Waals Material ZrSe3.

Two-dimensional van der Waals (2D vdW) materials are widely used in spin-orbit torque (SOT) devices. Recent studies have demonstrated the low crystal symmetry and large spin Hall conductivity of 2D vdW ZrSe3, indicating its potential applications in low-power SOT devices. Here, we study the interfacial contribution of SOTs and current-induced magnetization switching in the ZrSe3/Py (Ni80Fe20) and ZrSe3/Cu/Py heterostructures. SOT efficiencies of samples are detected by the spin-torque ferromagnetic resonance (ST-FMR), and out-of-plane damping-like torque (τB) is observed. The ratio between τB and the field-like torque (τA) decreases from 0.175 to 0.138 when inserting 1 nm Cu at the interface and then drops to 0.001 when the thickness of Cu intercalation is 2 nm, indicating that Cu intercalation inhibits the τB component of SOT. Moreover, the SOT efficiency is increased from 3.05 to 5.21, which may be attributed to the Cu intercalation being beneficial to improve the interface between Py and ZrSe3. Theoretical calculation has shown that the Cu spacer can change the conductivity of ZrSe3 from semiconductor to conductor, thereby decreasing the Schottky barrier and increasing the transmission efficiency of the spin current. Furthermore, magneto-optical Kerr effect (MOKE) microscopy is employed to verify the current-driven magnetization switching in these structures. In comparison to the ZrSe3/Py bilayer, the critical current density of ZrSe3/Cu/Py is reduced when inserting 1 nm Cu, demonstrating the higher SOT efficiency and lower power consumption in ZrSe3/Cu/Py structures.

Wafer-scale synthesis of 2D PtTe2 thin films with high spin–orbit torque efficiency

Spintronic devices have become a crucial technology for overcoming the power consumption bottleneck in integrated circuits, due to their low power consumption, high-speed processing capability. Two-dimensional materials offer potential for performance enhancement and device miniaturization in spintronics because of their unique electronic and spin properties. Specifically, two-dimensional transition metal dichalcogenides (2D TMDs) are favored in the field of spintronics for their strong spin–orbit coupling effects, enabling effective control over the electron spin state. However, the preparation techniques for 2D TMDs are still in the exploratory stage. In this work, we explore novel preparation method combining magnetron sputtering and molecular beam epitaxy, leading to wafer-scale high-quality monocrystalline PtTe2 thin films. Further, Spin-Orbit Torque (SOT) efficiency is investigated in PtTe2-based heterostructures, which reveals a significant spin Hall angle of over 0.094. Our work provides a new way to fabricate the wafer-scale PtTe2 thin films and confirms a large SOT efficiency, which indicates the great promise for spintronic applications.

The modulation of perpendicular magnetic anisotropy and spin–orbit toque in Pt/Co/Pt multilayers with interfacial decoration by insertion of a Bi layer

Bismuth is a well-known semimetal material with strong spin–orbit coupling and has been confirmed to exhibit a larger spin Hall angle in CuBi and PtBi alloys with low Bi-doping concentration. In this study, we investigated perpendicular magnetic anisotropy (PMA) and spin–orbit torques (SOTs) in Pt/Co/Pt multilayers by inserting a Bi layer with a thickness of 2 nm at the Co/Pt interface. Two types of PMA multilayers, Pt (3 nm)/Co (1 nm)/Pt (5 nm) and Pt (3 nm)/Co (1 nm)/Pt (1 nm), with different spin accumulations, were designed and prepared by varying the top Pt thickness. A significant enhancement of PMA and SOT efficiency is observed in the Pt (3 nm)/Co (1 nm)/Bi (2 nm)/Pt (5 nm) multilayer via a Bi-layer interfacial decoration. However, for the Pt (3 nm)/Co (1 nm)/Bi (2 nm)/Pt (1 nm) multilayers, both PMA and SOT efficiency decrease with decoration of the Bi layer at the Co/Pt interface. Meanwhile, the sign of SOTs changes in the Pt (3 nm)/Co (1 nm)/Pt (5 nm) and Pt (3 nm)/Co (1 nm)/Pt (1 nm) multilayers when introducing a Bi layer. This completely opposite behavior illustrates that the Bi/Pt interface plays an important role in modulating the PMA and SOT efficiency of Pt/Co/Bi/Pt multilayers. Optimizing the alloying of Bi/Pt could be an effective approach to increase the PMA and SOT efficiency of Pt/Co/Bi/Pt multilayers.