Efficient Photodetectors Research Articles

Enhancement in Photo-Response of CuZnS Nanocrystals-Based Photodetector Using Asymmetric Work Function Electrodes

In this study, an efficient visible light photodetector has been fabricated by using heavy metal-free CuZnS Nanocrystals with average particle size of 13±1 nm. This nanocrystal has been synthesized by a microwave (MW) assisted synthesis technique that has an optical band gap of 1.7 eV with an absorbance range of 300 to 700 nm. This device has been fabricated in a photoconductor geometry with CuZnS/ZnO bilayer structure and asymmetric work-function lateral electrodes. The work-function difference between the electrodes gives a driven voltage between the electrodes, which allows faster collection of charge carriers from the device. As a consequence, a significant photocurrent is generated by the device even without any external bias. The self-biased (at 0 V) external quantum efficiency (EQE) of this device is ∼4 % (at 430 nm) whereas this value reaches ∼20 % under 2 V external bias. The device possesses the responsivity (Rλ) and detectivity (D) of 8.8 A/W and 3.8 x 1012 Jones at 320 nm respectively under 2 V external bias.

Van der Waals ZnO/HfSn2N4 Heterojunction with Exceptional Photoresponse for Photodetectors.

Two-dimensional van der Waals heterojunctions represent a promising avenue for a spectrum of optoelectronic endeavors. Nonetheless, their deployment has been somewhat constrained by the suboptimal efficiency of the photocurrent generated. In this article, a ZnO/HfSn2N4 heterojunction is proposed to achieve high photoresponse efficiency. First-principles calculations are utilized to confirm that this heterojunction possesses thermal stability with a direct bandgap (1.36 eV). It exhibits a high light absorption coefficient and high carrier mobility (2.51 × 103 cm2 V-1 s-1), and biaxial strain has a significant effect on the modulation of the band structure. As the tensile strain increases, the bandgap changes nonlinearly, transitioning from a type-II to a type-I heterojunction. When compressive strain increases, the bandgap decreases. Quantum transport simulations are employed to calculate the density of states and transmission spectrum of the ZnO/HfSn2N4 model, verifying its excellent photoresponse (a photocurrent peak reaching 4.93 a02/photon and an extinction ratio peak of 75.1). It shows that the ZnO/HfSn2N4 heterojunction is a potentially efficient photodetector.

Pt/ZnO and Pt/few-layer graphene/ZnO Schottky devices with Al ohmic contacts using Atlas simulation and machine learning

The search for highly efficient photodetectors, driven by various applications ranging from environmental monitoring to communication systems and imaging, continues to drive research into novel materials and innovative device architectures. This paper offers an in-depth comparative analysis to optimize the performance of two types of Schottky ultraviolet (UV) photodetectors: platinum (Pt)/zinc oxide (ZnO) and Pt/few-layer graphene (FLG)/ZnO, both featuring aluminum (Al) ohmic contacts. The study systematically examines and compares the electrical and optical characteristics of these two photodetector configurations using the Silvaco TCAD simulation tool and machine learning regression models. The research outcomes demonstrate that the proposed photodetector configurations exhibit remarkable improvements, showcasing their substantial potential for superior performance in UV applications. The Pt/ZnO photodetector demonstrates a dark current density of 8.2 × 10−11 pA/cm2, a photocurrent density of 0.26 μA/cm2, a 3-dB cut-off frequency of 85.4 GHz, an external quantum efficiency of 90.41%, and an external photocurrent responsivity of 0.26A/W, at a bias of −1.0 V. On the other hand, Pt/FLG/ZnO photodetector demonstrates near zero dark current density, a photocurrent density of 0.2 μA/cm2, a 3-dB cut-off frequency of 2.44 THz, an external quantum efficiency of 68.52%, and an external photocurrent responsivity of 0.2 A/W at a bias of −1.0 V. Furthermore, a comprehensive comparative analysis of various machine-learning regression models is conducted, validating the simulation findings and providing a predictive framework for optimizing the photodetector's performance. Each machine-learning regression model is evaluated by getting root mean squared error and R2 values across different test set sizes to assess their accuracy in predicting the photodetector's characteristics. This study underscores the promising role of cutting-edge materials and computational techniques in advancing the development of next-generation optoelectronic devices with enhanced capabilities and performance.

Black Phosphorus for Mid-Infrared Optoelectronics: Photophysics, Scalable Processing, and Device Applications.

High efficiency mid-infrared (λ = 3-8 μm) light emitters and photodetectors are pivotal for advancing next-generation optoelectronics. However, narrow-bandgap semiconductors face fundamental challenges such as pronounced nonradiative carrier recombination and thermally generated noise, which impede device performance. Recently, two-dimensional layered black phosphorus (BP) and its alloys have attracted substantial interest for mid-infrared device applications, demonstrating superior performance relative to conventional III-V and II-VI semiconductors with similar bandgaps. In this review, we discuss the optical properties of BP, contrasting these with those of covalent compounds. Owing to its inherently self-terminated surface structure and reduced nonradiative recombination, BP exhibits high performance in light emission and photodetection at room temperature. Furthermore, this review highlights recent advances in the large-area processing of BP thin films, paving the way for practical device applications and integration. Finally, we explore ongoing challenges and emerging opportunities in the utilization of BP for functional mid-infrared devices.

Near-unity quantum efficiency of self-powered broadband photovoltaic black Si photodetectors with passivated Schottky junction

Near-unity quantum efficiency of self-powered broadband photovoltaic black Si photodetectors with passivated Schottky junction

Improved experimental scheme for the generation of pair coherent state in traveling-wave optical fields

Abstract Pair coherent state (PCS) is a two-mode non-Gaussian state recently generated within spatially confined superconducting cavities. Under typical conditions, it is unsuitable for performing global quantum missions in open space. Several methods have been proposed to generate this state with the capability to propagate unrestrictedly. However, these methods employed an excessive amount of unnecessary physical resources or relied on coherent displacement within the low regime. This paper presents a novel experimental approach to generate this state, specifically designed for facilitating long-distance quantum information processing and communication tasks. The method involves the utilization of two weak cross-Kerr nonlinear media, two balanced beam splitters, and an on/off photodetector. Furthermore, the input comprises three CSs with high amplitudes. These physical resources are potentially accessible within existing technology. The analysis of success probability and fidelity demonstrates that the PCS can be successfully generated with a high coherent parameter amplitude, even in scenarios where the photodetector efficiency is low, provided that the coherent amplitudes are sufficiently high.

Photodetector application of CuO nanoparticles on porous silicon fabricated by laser ablation in liquid at diverse laser energies

Abstract This paper describes the synthesis and analysis of a photodetector made of copper oxide nanoparticles (CuONPs) embedded in a porous silicon (PS) matrix. CuONPs were generated utilizing pulsed laser ablation in ethanol (PLAL), while a porous silicon-(PS) substrate was created via photo-assisted electrochemical etching. An investigation is conducted on the optical, structural, and electrical characteristics of CuONPs/PS devices, with a focus on their dependence on laser energy. The X-ray diffraction analysis reveals the presence of distinct peaks associated with a copper cubic structure, demonstrating the successful synthesis of CuONPs that have been deposited onto PS. The study using field emission scanning electron microscopy revealed that the particles exhibited spherical form. The CuO-nanocolloids exhibited a linear relationship between laser power and absorption, and their surface plasmon resonance peaks were clearly visible at 570–590 nm. Band gaps of 1.70, 1.61, 1.81, and 1.90 eV were found for CuONPs produced at 500, 600, 700, and 800 mJ of laser energy, respectively, according to the optical characteristics. The greatest responsivity of the CuO-NPs/PS photodetector, manufactured at an energy level of 700 mJ, was 0.135345 A/W at 450 nm, as determined by the optoelectronic characteristics. As a result of combining PS with CuONPs, the devices shown in this work have the ability to function as highly efficient photodetectors.

Modulating Eco-friendly Colloidal AgGaS2 Quantum Dots for Highly Efficient Photodetection and Image Sensing via Direct Growth of Ternary AgInS2 Shell.

Tailoring the optoelectronic characteristics of colloidal quantum dots (QDs) by constructing a core/shell structure offers the potential to achieve high-performing solution-processed photoelectric conversion and information processing applications. In this work, the direct growth of wurtzite ternary AgInS2 (AIS) shell on eco-friendly AgGaS2 (AGS) core QDs is realized, giving rise to broadened visible light absorption, prolonged exciton lifetime and enhanced photoluminescence quantum yield (PLQY). Ultrafast transient absorption spectroscopy demonstrats that the photoinduced carrier separation and transfer kinetics of AGS QDs are significantly optimized following the AIS shell coating. As-synthesized environmentally benign AGS/AIS core/shell QDs are employed to fabricate photodetectors (PDs), showing a remarkable responsivity of 38.4 AW-1 and a detectivity of 2.4×1012 Jones under visible light illumination (405 nm). Moreover, the fabricated QDs-PDs exhibit superior image-sensing capability to record complex patterns with high resolution (160×160 pixels) under visible light illumination at 405 and 532 nm. The findings indicate that the direct growth of multinary narrow-band shell materials on eco-friendly QDs holds great promise to implement future "green", cost-effective and high-performance optoelectronic sensing/imaging systems.

Лазерная оптико-телевизионная активно-импульсная система подводного видения

The article is devoted to the practical application of the active-pulse observation method to provide underwater vision in conditions of diffusing seawater. The laser optical-television active-pulse underwater vision system (APS UV) developed for the implementation of this method, based on synchronized pulsed laser illumination of objects of observation and video recording by a specially developed optical-television camera based on a highly efficient photodetector module with a sensitive structure «Third+ Generation Image Intensifier Tube with extended blue-green spectral region – Digital CMOS-matrix», provides the formation of video images of underwater objects in seawater with the determination of the range to them. A laser optical-television active-pulse underwater vision system (AIS PV) developed for the implementation of this method, based on synchronized pulsed laser illumination of underwater observation objects and video recording by a specially developed optical-television camera based on a highly efficient photodetector module with a sensitive structure “III+ generation electron-optical converter by – digital CMOS matrix”, which provides the formation of video images of underwater objects in seawater with the determination of the range to them. The article provides information on the physical prerequisites for the technical implementation of underwater vision in scattering seawater, as well as information on technical solutions for creating key elements of APS UV that can increase the range of vision by cutting off back scattering interference when observing in seawater. This advantage distinguishes APS UV from conventional optical television systems, in which back scattering is superimposed on the resulting image of the object, significantly reducing the range of vision and the quality of the resulting image. The results of the work performed are aimed at increasing the contrast of the image of the observed underwater object and, consequently, the range of vision of the APS UV. The article describes the developed model of the APS UV.

The enhanced characteristics of bipolar phototransistor with huge amplification

Heterojunction devices based on low-dimensional materials have the potential for convenient and efficient photodetection applications. In this study, we demonstrate a van der Waals (vdW) heterojunction device constructed by p-ZrGeTe4 and n-MoS2. Forming a p-n junction, the response speed of the device increased by 6 orders of magnitude compared to devices with individual MoS2. To further improve the responsivity of the device, a bipolar phototransistor (PTD) was prepared based on the p-n junction. The PTD achieves the photocurrent gain of almost 40. This PTD achieves high responsivity of 1.48 A W−1, and the corresponding specific detectivity can reach 3 × 1014 Jones in low frequencies. Under low frequencies, the noise of the device is dominated by generation–recombination noise; and as the frequency increases, it gradually becomes dominated by 1/f noise. The PTD is competitive in optoelectronics and promising in high-performance integrated devices.

Experimental Demonstration of Improvement in Near-Infrared Photodetection Efficiency by Plasmonic Diffraction

Experimental Demonstration of Improvement in Near-Infrared Photodetection Efficiency by Plasmonic Diffraction

Centimeter-scale single-crystal hexagonal boron nitride freestanding thick films as high-performance VUV photodetectors

Large-scale hexagonal boron nitride (h-BN) single crystals are highly desirable not only as the substrate or dielectric for van der Waals heterostructures, but also the promising candidates in optoelectronics, electronics, detectors, as well as recently boomed room-temperature single-photon sources. Here, we report the synthesis of centimeter-scale single-crystal h-BN films with hundreds of micrometer thickness via the metal flux method. The growth control along the out-of-plane and in-plane directions of h-BN crystals is realized by the adjustment of NiCr alloy composition, from which the limited solubility of N atoms can be promoted by high diffusion in molten reactants. This also benefits to forming a distinct interface between the synthesized h-BN crystals and the metal ingot, giving rise to an easy exfoliation of the large area high-quality thick films. Such h-BN crystals have been demonstrated as both self-powered flexible and rigid vacuum-ultraviolet photodetectors, allowing for efficient photodetection in terms of high responsivity, rapid response speed, and high operational temperature. A maximum photoresponsivity of 3.35 mA/W is achieved at a wavelength of 185 nm with an operational temperature spanning to 500 °C (and possibly beyond). The large-area freestanding h-BN single crystal described herein reveals great potential as a high-performance photodetector, and versatile platform for other superb electronic and optoelectronic devices.

Flexible transparent conductors with a percolated Ag nanostructure and its application as efficient self-bias plasmonic photodetector

A percolated silver (Ag) nanostructured-based transparent conductor has been deposited by physical vapor deposition (PVD) technique where lateral growth of Ag has been enhanced by a pre-deposited Ag-TiO2 thin film. This Ag-TiO2 film has embedded Ag nanoparticles (NPs) within TiO2 thin film which is grown in a low temperature (100 °C) solution processed technique. This process includes Li4Ti5O12 (LTO) thin film deposition by a sol–gel method followed by ion-exchange (Li+ → Ag+) process to yield an Ag-TiO2 thin film. The percolated Ag network has appeared as soon film mass-thickness reaches close to 10 nm, resulting in an abrupt drop of electrical resistivity of the film. This percolated Ag nanostructured thin film (10 nm Ag/Ag-TiO2/plastic) has resistivity of ∼50 Ω/□ and an average visual transmittance of >70 % up to 450 nm. In higher wavelength range, transparency gradually reduces, and it reaches to ∼50 % at 600 nm which is mostly due to the plasmon absorption of this film. By utilizing its combined optical transparency and surface plasmon absorption, this film has been used to develop plasmonic hot electron photodetectors where Ag-thin film works as transparent electrode as well as plasmon induced photo-excited hot electron generation. Device has been fabricated on a heavily doped n type Si (n++-Si) with a metal–semiconductor-metal (M−S−M) device geometry. External quantum efficiency (EQE) data reveal that photocurrent of this device is mostly generated in the plasmonic absorption region with a peak detectivity of 2.84 × 1012 Jones at 510 nm under −3V external bias. Besides, the device shows fast response with a response time of ∼25 ms.

Computational investigation for electronic, structural, linear/nonlinear optical responses for newly designed organometallic quantum dots

AbstractThe interaction of metallic ($$M^{ + 3}$$ M + 3 )-cations ($$M = {\text{Al}},{\text{Cu}},{\text{Zn}},{\text{In}},{\text{Ga}},{\text{Ge}},{\text{Sb}},{\text{Sn}}$$ M = Al , Cu , Zn , In , Ga , Ge , Sb , Sn ) with an active organic linker result in the formation of organometallic quantum dots (OMQDs). The B3LYP and WB97X interfaces via 6-311G++(d,p) route are used to test the stability, electrical, optical, and nonlinear-optics (NLO) properties. OMQD UV–Vis absorption spectra are computed. Some OMQD have singlet spin states, while others have doublet spin states. Cation mobility and the organic linker nature have a significant impact on both optical and NLO properties. For electron rush via the conduction domain, doublet spins provide more advanced turnabilities than singlets. For singlet-spin Cu-3HPHP QDs, an anomalous NLO response is endorsed. Both Zn-3HPHP and Sn-3HPHP QDs are recognized as the finest contenders. Zn-3HPHP and Sn-3HPHP appear to be the next covenant for highly efficient optoelectronics and avalanche photodetectors.

Brushy C-Decorated BiTe-Based Thermoelectric Film for Efficient Photodetection and Photoimaging.

Current strategies for simultaneously achieving high thermoelectric performance and high light absorption efficiency still suffer from complex steps and high costs. Herein, two kinds of amorphous thermoelectric films of n-type Bi2Te3 and p-type Bi0.5Sb1.5Te3 with high Seebeck coefficients were prepared by pulsed laser deposition (PLD) technology. In addition, C-decorated films with excellent light absorption efficiency at the junction of the thermoelectric legs were prepared by simple drop coating and reactive ion etching (RIE) method. The TE/C-RIE composite device exhibits excellent photodetection performance under the conditions of simulated natural light, monochromatic light, and high-frequency chopping. The maximum responsivity and specific detectivity of the device can reach 153.58 mV W-1 and 6.97 × 106 cm Hz1/2 W-1 (under simulated natural light), respectively. This represents an improvement rate of 85.91% compared to that of the pure TE device. Benefiting from the excellent photodetection efficiency of the device and integration advantage of PLD technology, the composite structure can be expanded into integrated photoimaging devices. The accurate identification of patterned light sources with letters (T, J, and U) and digitals (0-9) was successfully realized by associating the response electrical signals of each electrode with the position coordinates. This work provides valuable guidance for the design and fabrication of wide-spectrum photodetectors and complex optical imaging devices.

Precisely Tailoring Ferroelectric Photocurrent via Magnetic Spin Chain toward Efficient Self-Powered UV Photodetectors

Precisely Tailoring Ferroelectric Photocurrent via Magnetic Spin Chain toward Efficient Self-Powered UV Photodetectors

Inhibiting interfacial transport loss for efficient organic nonfullerene solar cells and photodetectors

Nonfullerene organic solar cells (OSCs) and photodetectors have received tremendous interest due to their rapidly progressed power conversion efficiency (PCE) and wide range photoresponse to near-infrared region, respectively. Further optimization of the interfacial transport layer is one of the key factors toward enhanced performance. Herein, we reported a general multi-component electron transport layer (ETL) strategy to achieve better energy level alignments and interfacial contact for both OSCs and photodetectors. The binary polymer:molecule blend based ETL can overcome low crystallinity and self-aggregation issue in neat polymer and molecule ETL, respectively. The mixed blend provides a more tunable platform to optimize the interfacial morphology and creates more efficient charge-transporting pathways. We showcase that the PNDIT-F3N:PDINN binary ETL exhibits its strength in a series of nonfullerene OSCs with enhanced fill factor and current density, achieving a champion PCE approaching 19%. Additionally, self-powered organic photodetectors with lower dark current and high detectivity were achieved with the same binary ETL strategy. Detailed morphology and device characterizations reveal that the binary ETL modulates the interfacial interface to deliver a more favorable energy level alignment, facilitating carrier extraction and transport. We believe these findings could provide insight into the design of ETL with sufficient interfacial tunability for organic optoelectronic devices.

Ultranarrow Bandgap Electron Acceptor with Low Reorganization Energy and Refined Crystallization Enables Efficient Self-Powered Photodetectors with Spectral Response over 1100 nm

Ultranarrow Bandgap Electron Acceptor with Low Reorganization Energy and Refined Crystallization Enables Efficient Self-Powered Photodetectors with Spectral Response over 1100 nm

Design and Development of Metasurface Materials for Enhancing Photodetector Properties.

Recently, metasurface-based photodetectors (metaphotodetectors) have been developed and applied in various fields. Metasurfaces are artificial materials with unique properties that have emerged over the past decade, and photodetectors are powerful tools used to quantify incident electromagnetic wave information by measuring changes in the conductivity of irradiated materials. Through an efficient microstructural design, metasurfaces can effectively regulate numerous characteristics of electromagnetic waves and have demonstrated unique advantages in various fields, including holographic projection, stealth, biological image enhancement, biological sensing, and energy absorption applications. Photodetectors play a crucial role in military and civilian applications; therefore, efficient photodetectors are essential for optical communications, imaging technology, and spectral analysis. Metaphotodetectors have considerably improved sensitivity and noise-equivalent power and miniaturization over conventional photodetectors. This review summarizes the advantages of metaphotodetectors based on five aspects. Furthermore, the applications of metaphotodetectors in various fields including military and civil applications, are systematically discussed. It highlights the potential future applications and developmental trends of metasurfaces in metaphotodetectors, provides systematic guidance for their development, and establishes metasurfaces as a promising technology.

Light-Triggered Anti-ambipolar Transistor Based on an In-Plane Lateral Homojunction.

Currently, the construction of anti-ambipolar transistors (AATs) is primarily based on asymmetric heterostructures, which are challenging to fabricate. AATs used for photodetection are accompanied by dark currents that prove difficult to suppress, resulting in reduced sensitivity. This work presents light-triggered AATs based on an in-plane lateral WSe2 homojunction without van der Waals heterostructures. In this device, the WSe2 channel is partially electrically controlled by the back gate due to the screening effect of the bottom electrode, resulting in a homojunction that is dynamically modulated with gate voltage, exhibiting electrostatically reconfigurable and light-triggered anti-ambipolar behaviors. It exhibits high responsivity (188 A/W) and detectivity (8.94 × 1014 Jones) under 635 nm illumination with a low power density of 0.23 μW/cm2, promising a new approach to low-power, high-performance photodetectors. Moreover, the device demonstrates efficient self-driven photodetection. Furthermore, ternary inverters are realized using monolithic WSe2, simplifying the manufacturing of multivalued logic devices.