Organic–inorganic hybrid Ge(II)‐based metal halides have garnered significant interest due to their intriguing photophysical properties and environmentally friendly characteristics. However, challenges such as poor stability, low emission intensity, and a complex synthesis process have hindered their widespread application. In addressing these issues, a breakthrough in the large‐scale production of Sb3+‐doped Ge(IV)‐based metal halide (C13H14N3)2GeCl6 phosphors at room temperature through a straightforward solution method is presented. The synthesized compound exhibits a remarkable bright broad yellow emission band at 590 nm, boasting a photoluminescence quantum efficiency of 99.53 ± 0.06% the highest among Ge(IV)‐based metal halides. Notably, the introduction of Sb3+ induces the formation of Jahn–Teller‐like self‐trapped excitons in [SbCl6]3− species, attributable to lattice distortion and strong electron–phonon coupling. Consequently, Sb3+‐doped (C13H14N3)2GeCl6 demonstrates a large Stokes shift (221 nm) and a prolonged decay lifetime (3.06 μs). Furthermore, the Sb3+‐doped compound exhibits commendable chemical‐ and photostability, prompting exploration in applications such as white light‐emitting diodes and latent fingerprint detection. This work not only provides a practical approach for designing economically viable, environmentally friendly, and highly efficient emission phosphors but also paves the way for novel directions in their expanded application.