Efficient Light Emission Research Articles

On-Off Switching of Singlet Self-Trapped Exciton Emission Endows Antimony-Doped Indium Halides with Excitation-Wavelength-Dependent Luminescence.

Excitation-wavelength-dependent (Ex-De) emitters are a fascinating category of luminescent materials whose emission properties vary with the wavelength of the light used for excitation. Antimony (Sb3+)-doped indium (In)-based metal halides are efficient light emitters; however, the peak fluorescence emission of most Sb3+-activated In-halide remains independent of the excitation wavelength. Here, the study introduces a new Sb3+-doped In-halide cluster, (BDPA)2InCl5:Sb (BDPA+ = C15H18N+, benzyldimethylphenylammonium), which demonstrates efficient Ex-De emission originating from the on-off switchable fluorescence behavior of singlet self-trapped exciton (STE) in 5-coordinate Sb3+ dopant. Interestingly, when excited within the range of 240-370nm, photoluminescence (PL) spectra of (BDPA)2InCl5:Sb show both singlet and triplet STE emission. However, under excitation wavelengths of 370 to 420nm, the singlet STE emission is absent, resulting in a noticeable correlated color temperature change from 1700 to 3800 K. The study provides a new approach to designing color-tunable Sb3+-based luminophores, and also presents a novel application scenario for the widely recognized Sb3+ doping strategy.

Rod‐Like Microcrystal Scintillators Based on Organic–Inorganic Hybrid Copper Halides for X‐Ray Imaging

AbstractCopper‐based organic–inorganic hybrid halides (OIHHs) have garnered significant interest in X‐ray imaging due to their flexible structural adjustability, efficient light emission, strong X‐ray absorption, etc. Herein, four copper‐based OIHH crystals composed of the same organic ligands (isopropyl triphenylphosphonium cations, IPP+) and inorganic parts (Cu2I42−) are synthesized by varying the ratios of raw materials and types of reaction solvents. Although these crystals share identical structures, they exhibit different luminescent behaviors (blue, green, white, and yellow) attributed to vacancy defects originating from CuI. Notably, the novel copper‐based OIHH (CP2) with green emission shows the best luminescence efficiency (99.54%) and excellent scintillation performance (50675 photons MeV−1). The traditional technology of scintillation screens mixing scintillator powders and polymers often results in light scattering due to powder aggregation and inhomogeneity. To address this challenge, the dispersant polyvinyl pyrrolidone is introduced to prepare uniform rod‐like microcrystals of CP2. The scintillation screen based on CP2 microcrystals achieves a high spatial resolution of 16–18 lp mm−1, surpassing the resolution of most copper‐based OIHH scintillators. Furthermore, it is imaging capabilities are validated using a commercial X‐ray flat panel detector, demonstrating imaging performance comparable to that of commercial scintillators.

Modulation of photoluminescence properties of transition metal dichalcogenides through temperature and Au/Ag nanoparticles

Abstract Transition metal dichalcogenides (TMDCs) attract significant attention because of their remarkable optical properties. Nowadays, the light emission efficiency of TMDCs is still inferior. Temperature and plasma resonance effects can be important approaches in the modulation of their luminescence performance. Here, multilayer WSe2 and monolayer MoSe2 were synthesized. Under the temperature control system, two photoluminescence (PL) peaks are observed from multilayer WSe2. The higher-energy PL peak results from K-Γ indirect band gap transition, which is then demonstrated by the first principle calculation. Otherwise, PL enhancement is realized on monolayer MoSe2 decorated with Au nanoparticles. The PL of WS2 is inhibited by hybridization with Ag nanoparticles.

Controllable multicolored optical glass-ceramics based on nanostructure strategies and dopants

Novel functional materials that integrate multiple tunable luminescence modes hold significant scientific and application potential. In this study, nanostructure strategies were employed to fabricate a series of microcrystalline glasses doped with rare-earth and transition-metal ions. The crystallization behavior of the nanocrystals (NCs) was revealed through high-resolution transmission electron microscopy (HRTEM), and the photoluminescence spectra of the samples were systematically investigated, demonstrating the achievement of independent and efficient visible light emission. With the further addition of the dopant Mn2+, it can occupy different sites to generate efficient energy transfer for ions, effectively improve the luminous efficiency, and changing the Mn2+ concentration can achieve a wide tunable color gamut. In addition, by exciting the glass samples with different excitation light sources, tunable emission of both red and blue was achieved. The results demonstrated the significant potential of the experimental samples as new multifunctional materials for optical dynamic anti-counterfeiting applications.

Narrowband Emission in Pt(II) Complexes via Ligand Engineering for Blue Phosphorescent Organic Light‐Emitting Diodes

AbstractIn this study, three stable tetradentate Pt(II) complexes are synthesized and characterized, namely, Pt‐biPh, Pt‐biPh5tBu, and Pt‐biPh4tBu, tailored for blue phosphorescent organic light‐emitting diodes to realize high‐efficiency and narrowband emissions via ligand engineering. Biphenyl (Pt‐biPh) or tert‐butyl‐modified biphenyl (Pt‐biPh5tBu and Pt‐biPh4tBu) is introduced into the carbene unit of the ligand to control the intermolecular interactions between the Pt(II) phosphors. Pt‐biPh, Pt‐biPh5tBu, and Pt‐biPh4tBu exhibit high photoluminescence quantum yields of 74%, 84%, and 92% with exciton lifetimes of 2.2, 2.3, and 2.5 µs, respectively, demonstrating rapid and efficient light emission. Furthermore, Pt‐biPh, Pt‐biPh5tBu, and Pt‐biPh4tBu show maximum external quantum efficiency (EQE) values of 18.1%, 19.0%, and 21.8%, respectively. Pt‐biPh5tBu and Pt‐biPh4tBu exhibit narrowband emission with a full width at half maximum of 21 nm owing to the small vibrational emission because of their sterically hindered and bulky ligand structures. Moreover, phosphor‐sensitized thermally activated delayed fluorescence devices employing a Pt‐biPh4tBu sensitizer achieve a high EQE of 28.6%. In particular, Pt‐biPh4tBu performs better than the state‐of‐the‐art phosphor as the sensitizer of the blue phosphor‐sensitized thermally activated delayed fluorescence devices in terms of the EQE.

Room-temperature efficient and tunable interlayer exciton emissions in WS2/WSe2 heterobilayers at high generation rates.

Transition metal dichalcogenide (TMDC) heterobilayers (HBs) have been intensively investigated lately because they offer novel platforms for the exploration of interlayer excitons (IXs). However, the potentials of IXs in TMDC HBs have not been fully studied as efficient and tunable emitters for both photoluminescence (PL) and electroluminescence (EL) at room temperature (RT). Also, the efficiencies of the PL and EL of IXs have not been carefully quantified. In this work, we demonstrate that IX in WS2/WSe2 HBs could serve as promising emitters at high generation rates due to its immunity to efficiency roll-off. Furthermore, by applying gate voltages to balance the electron and hole concentrations and to reinforce the built-in electric fields, high PL quantum yield (QY) and EL external quantum efficiency (EQE) of ∼0.48% and ∼0.11% were achieved at RT, respectively, with generation rates exceeding 1021 cm-2·s-1, which confirms the capabilities of IXs as efficient NIR light emitters by surpassing most of the intralayer emissions from TMDCs.

Efficient blue light emission induced by the Cu-doping in Cs2ZnI4 for white light-emitting diodes

Zinc halides have attracted much interest because of their unique structures, non-toxicity and low cost among lead-free halides. In this work, we studied the crystal structures and luminescence properties of Cu-doped Cs2ZnI4 (Cs2Zn1-xCuxI4-x, x = 0.01–0.15). The pristine Cs2ZnI4 has no luminescence properties under ultraviolet light irradiation, while the Cu-doped ones emit blue lights. With the increase of the doping level, the luminescence peak of as-fabricated samples gradually shifted from 476 nm to 450 nm. Detailed experimental characterization and theoretical calculations demonstrate that the emission of blue light originates from the mechanism of self-trapped exciton. A phosphor-converted white light-emitting diode fabricated with Cs2Zn0.9Cu0.1I3.9 exhibits a high color rendering index of 94.2 and remains stable when adjusting the operating current. This work reports Cs2ZnI4 as a new phosphor, demonstrating the potential application of the zinc family for the field of solid-state lighting.

Wide Range Near-Zero Thermal Quenching of Orange-Yellow Phosphor via Impeding Self-Oxidation of Eu2+ for Versatile Optoelectronic Applications.

Li2SrSiO4:Eu2+ is a promising substitute for traditional Y3Al5O12:Ce3+ (YAG:Ce3+) owing to its strong orange-yellow emission of 4f-5d transition originating from Eu2+ dopant, covering the more red-light region. However, its inevitable luminescence thermal quenching at high temperatures and the self-oxidation of Eu2+ strongly impede their applications. Their remediation remains highly challenging. Herein, an anti-self-oxidation(ASO) concept of Eu2+ in Li2SrSiO4 substrate by adding trivalent rare-earth ions (A3+: A = La, Gd, Y, Lu) for highly efficient and stable orange-yellow light emission have been proposed. A significantly increased orange-yellow emission (202% improvement) from Li2Sr0.95A0.05SiO4:Eu2+ with a wide range near-zero thermal quenching is obtained, superior to other Eu2+ activated phosphors. The presence of A3+ ions with various radii modifies the ASO degree of Eu2+ ions, achieving the tunable chemical state, composition, electronic configuration, crystal-field strength, and luminescent characteristics of the developed phosphors. For the proof of the concept, a W-LED device and a PDMS (Polydimethylsiloxane) luminescent film are fabricated, endowing excellent luminescence performance and thermal stability and the huge application prospects of Li2SrSiO4:Eu2+ in lighting and display fields.

Development of a bi-solvent liquid scintillator with slow light emission

One of the most promising approaches for the next generation of neutrino experiments is the realization of large hybrid Cherenkov/scintillation detectors made possible by recent innovations in photodetection technology and liquid scintillator chemistry. The development of a potentially suitable future detector liquid with particularly slow light emission is discussed in the present publication. This cocktail is compared with respect to its fundamental characteristics (scintillation efficiency, transparency, and time profile of light emission) with liquid scintillators currently used in large-scale neutrino detectors. In addition, the optimization of the admixture of wavelength shifters for a scintillator with particularly high light emission is presented. Furthermore, the pulse-shape discrimination capabilities of the novel medium was studied using a pulsed particle accelerator driven neutron source. Beyond that, purification methods based on column chromatography and fractional vacuum distillation for the co-solvent DIN (Diisopropylnaphthalene) are discussed.

Prospect of Hexagonal CsMg(I1–xBrx)3 Alloys for Deep-Ultraviolet Light Emission

Abstract Materials for deep-ultraviolet (DUV) light emission are extremely rare, significantly limiting the development of efficient DUV light-emitting diodes. Here we report CsMg(I1−x Br x )3 alloys as potential DUV light emitters. Based on rigorous first-principles hybrid functional calculations, we find that CsMgI3 has an indirect bandgap, while CsMgBr3 has a direct bandgap. Further, we employ a band unfolding technique for alloy supercell calculations to investigate the critical Br concentration in CsMg(I1−x Br x )3 associated with the crossover from an indirect to a direct bandgap, which is found to be ∼ 0.36. Thus, CsMg(I1−x Br x )3 alloys with 0.36 ⩽ x ⩽ 1 cover a wide range of direct bandgap (4.38–5.37 eV; 284–231 nm), falling well into the DUV regime. Our study will guide the development of efficient DUV light emitters.

Room temperature stimulated long-persistent phosphorescence of polyurethane/SrAl2O4: Eu2+, Dy3+ composite material for textile-based applications

Textile-based SrAl2O4(SAO): Eu2+, Dy3+ composite material offers functional, aesthetic, and safety benefits, making it a valuable innovation with diverse applications in various industries. The susceptibility of textile-based SAO: Eu2+, Dy3+ composite material is degraded with repeated washing, which can diminish its luminescent properties over time. Our major goal was to create a cloth with durable photoluminescent qualities by incorporating waterborne polyurethane (WPU) as a protective coating that could generate light constantly without a light source. Through a systematic approach involving the synthesis of photoluminescent SAO: Eu2+, Dy3+ particles and their integration into a cloth substrate with waterborne polyurethane, a durable cloth with enhanced durability, protection, and adhesion properties are achieved. Cotton fabric and a rotary screen-printing machine were used to apply a thin, translucent layer of glow-in-the-dark pigment to produce the photoluminescence characteristics of the developed cloth revealing efficient light absorption and emission behavior, with emission spectra centered around absorption wavelength between 560 nm and 880 nm, with a 500 nm emission peak, exhibiting of the presence of Eu2+ and Dy3+ activator ions. In addition, to assess the comfort of the treated cotton fabric, a fabroOmeter test was conducted, that provided insights into its overall comfort level. Furthermore, the cloth demonstrates excellent stability and longevity of photoluminescence under various environmental conditions, making it suitable for applications requiring high visibility, safety signage, decorative elements, and apparel wear. This research underscores the potential of polyurethane-enhanced photoluminescent textiles as versatile and sustainable solutions for diverse practical applications.

Design of an on-chip germanium cavity for room-temperature infrared lasing

Germanium (Ge) is one of the most promising material platforms to enable the realization of monolithically integrated laser on silicon because it is a group-IV material with a pseudo-direct-band structure that can be converted into direct-bandgap either through the application of tensile strain or via the tin (Sn) incorporation in Ge. The bandgap modification enhances the light emission efficiency of Ge, where lasing can also be observed if a suitable cavity preserving the strain can be realized. In fact, several different research groups have reported lasing from strained Ge and GeSn optical cavities, however they all report lasing at low temperatures and room-temperature lasing, which is the ultimate goal required for a fully integrated laser, has not been demonstrated yet. In this work, we design an on-chip germanium cavity that has all the ingredients combined to make the room-temperature lasing possible. The design includes a 4.6% uniaxially tensile strained Ge gain medium embedded in a Fabry-Perot like cavity composed of two distributed Bragg reflectors. 3-dimensional (3D) Finite Element Method (FEM) based strain simulations together with a proposed fabrication methodology provides a guideline for the realization of the structure. Furthermore, 3D Finite Difference Time Domain (FDTD) simulations demonstrate that the designed structure is suitable for the room-temperature lasing in a wavelength range of 2410–2570 nm. 3D FEM-based heat transfer simulations performed for the designed cavity verifies the eligibility of the room-temperature operation paving the way for a possible demonstration of on-chip laser that could take part in the fully integrated infrared systems for a variety of applications including biological and chemical sensing, as well as security such as alarm systems and free-space optical communications.

Finite-Area Membrane Metasurfaces for Enhancing Light-Matter Coupling in Monolayer Transition Metal Dichalcogenides.

Transition metal dichalcogenides (TMDCs) are at the forefront of nanophotonics because of their exceptional optical characteristics. The 2D architecture of TMDCs facilitates efficient light absorption and emission, holding tantalizing potential for next-generation nanophotonic and quantum devices. Yet, the atomic thinness limits their interaction volume with light, affecting light-matter interaction and quantum efficiency. The light coupling in the 2D layered TMDCs can be enhanced by integration with photonic structure, and the metasurfaces supporting bound states in the continuum (BICs) offer strong confinement of optical fields, ideal for coupling with 2D TMDCs. Here, we demonstrate enhanced light-matter coupling by integrating TMDC monolayers, including WSe2 and MoS2, with a finite-area membrane metasurface, leading to amplified and high-quality-factor (Q-factor) spontaneous emission from quasi-BIC-coupled TMDC monolayers. The high-Q-factor emission extends over an area with a scale of a few micrometers while maintaining the high-Q factor across the emission area. Notably, the suspended finite-area membrane metasurface, which is freestanding in air rather than positioned atop a substrate, minimizes radiation loss while enhancing light-matter interaction in the TMDC monolayer. Furthermore, the predominantly in-plane dipole orientation of excitons within TMDC monolayers results in distinctive enhancement behaviors for emission, contingent on the excitation power, when coupled with quasi-BIC modes exhibiting TE and TM resonances. This work introduces a nanophotonic platform for robust coupling of membrane metasurfaces with 2D materials, offering possibilities for developing 2D material-based nanophotonic and quantum devices.

InGaAs/GaAs nano-ridge laser with an amorphous silicon grating monolithically grown on a 300 mm Si wafer.

The monolithic growth of direct-bandgap III-V materials directly on a Si substrate is a promising approach for the fabrication of complex silicon photonic integrated circuits including light sources and amplifiers. It remains challenging to realize practical, reliable, and efficient light emitters due to misfit defect formation during the epitaxial growth. Exploiting nano-ridge engineering (NRE), III-V nano-ridges with high crystal quality were achieved based on aspect ratio defect trapping inside narrow trenches. In an earlier work, we used an etched grating to create distributed feedback lasers from these nano-ridges. Here we deposited an amorphous silicon grating on the top of the nano-ridge. Under pulsed optical pumping, a ∼7.84 kW/cm2 lasing threshold was observed, ∼5 times smaller compared to devices with an etched grating inside the nano-ridge. Compared to the etched grating, the amorphous silicon grating introduces no extra carrier loss channels through surface state defects, which is believed to be the origin of the lower threshold. This low threshold again demonstrates the high quality of the epitaxial deposited material and may provide a route toward further optimizing the electrically driven devices.

Additive Mixing of Emissive Ligands in Covalent Organic Frameworks for White Light Emission.

Emissive covalent organic frameworks (COFs) are a promising class of crystalline materials that have demonstrated applications for sensing and light-emitting diodes. However, white light emission from a single COF has not been achieved yet as it requires multicomponent organic chromophores that simultaneously emit blue, green, and red light. In this work, we report the successful synthesis of a single COF with efficient white light emission by utilizing tunable emission properties of 2,1,3-benzothiadazole after incorporating different functional groups on its core structure, which results in the formation of three ligands, i.e., 4',4-(benzothiadiazole-4,7-diyl)-dibenzaldehyde (BTD), 4,4'-(benzoselenadiazole-4,7-diyl)-dibenzaldehyde (BSD), and 4,4'-(naphtho[2,3-c][1,2,3] selenadiazole-4,9-diyl)-dibenzaldehyde (NSD), that emit in the blue, green, and red regions of the visible light spectrum. We show that white light emission can only occur when BTD, BSD, and NSD are assembled in a single COF structure due to the facilitated energy transfer process from BTD to BSD/NSD. This work demonstrates a unique approach to developing new white light-emitting materials based on the COF structure.

Pb2+- and Sn2+-Doped (1-Phenylpiperazine)ZnBr4 Single Crystal with Highly Efficient Light Emission

Pb2+- and Sn2+-Doped (1-Phenylpiperazine)ZnBr4 Single Crystal with Highly Efficient Light Emission

Tunable Ag Nanocavity Enhanced Green Electroluminescence from SiNx:O Light-Emitting Diode.

As the driving source, highly efficient silicon-based light emission is urgently needed for the realization of optoelectronic integrated chips. Here, we report that enhanced green electroluminescence (EL) can be obtained from oxygen-doped silicon nitride (SiNx:O) films based on an ordered and tunable Ag nanocavity array with a high density by nanosphere lithography and laser irradiation. Compared with that of a pure SiNxO device, the green electroluminescence (EL) from the SiNx:O/Ag nanocavity array device can be increased by 7.1-fold. Moreover, the external quantum efficiency of the green electroluminescence (EL) is enhanced 3-fold for SiNx:O/Ag nanocavity arrays with diameters of 300 nm. The analysis of absorption spectra and the FDTD calculation reveal that the localized surface plasmon (LSP) resonance of size-controllable Ag nanocavity arrays and SiNx:O films play a key role in the strong green EL. Our discovery demonstrates that SiNx:O films coupled with tunable Ag nanocavity arrays are promising for silicon-based light-emitting diode devices of the AI period in the future.

Near‐Unity Green Luminescent and Stable Lead‐Free Cs3Cu2Cl5 Nanocrystals Assisted by MnC2O4 Treatment

AbstractThe toxicity and chemical instability shortcomings of lead halide perovskites are major concerns that continue to motivate the search for next generation alternatives. Copper halides are known to be lead‐free, earth‐abundant, low‐cost, and environmentally friendly, and affordable in optoelectronic performance due to their bright luminescence, tunable emission wavelength, and excellent stability. However, the controlled synthesis of low‐dimensional copper halide nanocrystals (NCs) with near‐unity photoluminescence quantum yield (PLQY) and high stability remains a great challenge. In this work, we report a reasonable optimization approach for the preparation of Cs3Cu2Cl5 NCs by hot‐injection colloidal synthesis technology. Specifically, the Cs3Cu2Cl5 NCs synthesized with MnC2O4 as the defect repair agent exhibited negligible self‐absorption, bright green luminosity with PL emission at about 535 nm and PLQY can be increased from 68.7 % to 100 %. The Cs3Cu2Cl5 NCs shows excellent stability and outstanding optical properties, and is expected to be used as highly efficient green light emitter in high‐efficiency X‐ray scintillator.

Exploring single rare earth doped nanophosphor for efficient white emission through codoping of Na+ and Bi3+ ions into Dy3+ activated LaPO4

Using the simple hydrothermal technique, high-purity nanocrystalline Na+ and Bi3+ co-doped Dy3+ activated LaPO4 was effectively prepared. The structural characterisation of the prepared samples was carried out using XRD, EDS, SEM and FTIR analysis. The existence of Na+, Dy3+, La3+, P5+, O2– and Bi3+ was demonstrated using EDS analysis. The direct band gap value of 4.72 eV is obtained from UV visible absorption spectrum and infer that the doped samples are suitable for optical applications. The photoluminescence excitation spectrum monitored at 474 nm and 570 nm emission, the Na+ and Bi3+ co-doped Dy3+ activated LaPO4 exhibit narrow, and intense characteristics f-f peak of Dy3+ ion at 349 nm, 363 nm, 386 nm and 452 nm. Photoluminescence emission spectrum, monitored under 349 nm, 363 nm and 386 nm shows high intense sharp blue emission peaks of Dy3+ with stark splitting at 475 nm, 478 nm, and 486 nm, yellow emission at 571 nm and 580 nm and a very feeble peak at 658 nm in the red region. When the sample is excited at 452 nm only a yellow band is present. Since the intensity of blue and yellow emission in this host matrix is so high and nearly equal, it is appropriate for cool white emission under 350 nm, 363 nm and 386 nm (near UV) excitation and under 452 nm (blue LED) excitation the prepared phosphor may emerge as highly efficient warm white light emitter suitable for general solid-state lighting applications, which can be further confirmed by CIE chromaticity analysis of the prepared sample. In photoluminescence excitation and emission spectra intensities of peaks of the samples with Bi3+ are more intense, this confirms the positive impact of co-doping of Bi3+ into the sample. The Q value from the Dexter’s formula is calculated as an average of 6.4 and is very close to 6 indicates that the interaction is dipole − dipole, which causes the non-radiative energy migration among the Dy3+ ions in the sample. The lifetime of characteristic yellow emission of Dy3+ in the Na+ and Bi3+ co-doped Dy3+ activated LaPO4 host matrix monitored under 350 nm is calculated as 0.642 ms from decay analysis, fitted by a bi-exponential function. The results support the idea that co-doping of Bi3+ and Na+ into the LaPO4:Dy3+ matrix could emerge as a potential white light emitting phosphor for phosphor-converted white LED application.

Influence of quantum well thickness on the Cathodoluminescent properties of AlGaN-based UVC light source tube with CNT field emitters

Far ultraviolet C (UVC) light sources work well for a variety of applications, such as water purification, bacteria and virus sterilization, and sensing, because of their short wavelength. Herein, the recognized problems with a conventional UVC-LED are solved by creating a triode structure UVC light source tube (UVC-LST) operating at ∼268 nm employing a carbon nanotube (CNT) electron emitter as an excitation source. The UVC light emission of an aluminum reflector-capped AlGaN multiple quantum well (MQW) heterostructures synthesized on a nanopatterned sapphire substrate based on a cathodoluminescence (CL) layer is assessed. For luminescence results comparison, the heterostructure of AlGaN-based MQWs was fabricated with various QW layer thicknesses of 1, 1.5, and 2 nm. The utilization of a thinner QW layer with a thickness of 1 nm significantly improved the UVC light emission efficiency compared to the UVC-LSTs fabricated with thicker QW layers of 1.5 nm and 2 nm. The UVC-LST with the 1 nm QW layer exhibited approximately a 30 % improvement in light output power compared to the UVC-LST with a 1.5 nm QW layer, and closely a 33 % improvement compared to the UVC-LST with a 2 nm QW layer. Moreover, the UVC-LST with the thinner QW layer demonstrated a high power efficiency of 5.24 % when operating on a 2-inch light-emitting area, while consuming a low power of 7 W. This high power efficiency indicates that a significant portion of the input electrical power is effectively converted into UVC light output, highlighting the superior performance of the UVC-LST based on the 1 nm QW layer design.