Carrier Injection Efficiency Research Articles

Tailoring Quantum Wells in AlGaInP Laser Diodes for Superior Optical Performance

Abstract This work employed composition-graded quantum wells (QWs) to increase the performance of red laser diodes (LDs) based on Aluminum gallium indium phosphide (AlGaInP). Two LDs, one with conventional QWs and other with composition-graded QWs, were studied numerically. The findings showed that the LD with composition-graded QWs significantly improved the device performance such as enhanced carrier concentration in the active region, decreased carrier leakage, improved carrier injection efficiency, and a higher rate of stimulated recombination rate. According to the results of the simulation, grading the QWs enhanced the slope efficiency to 0.80 W/A and successfully reduced the threshold current to 300 mA. This enhanced performance, compared to conventional LDs, demonstrates the promising impact of our employed composition grading.

Distinct Promotion of PEC Water Oxidation of Ta2O5/α-Fe2O3/Co-Ni PBA via Coupling Ni 3d with O 2p.

The development of robust and effective photoanodes is crucial for photoelectrochemical hydrogen production via total water splitting. Herein, the Ta2O5/α-Fe2O3/Co-Ni PBA (TFPB-1) photoanode was constructed by the compositing n-type Ta2O5 and n-type α-Fe2O3 followed by the deposition of p-type Co-Ni PBA. The IPCE of TFPB-1 was increased to 35.4% compared to 13.9% for Ta2O5 owing to the significantly improved light absorption efficiency, carrier separation efficiency and injection efficiency. The TFPB-1 achieved a current density of 2.78 mA cm-2 at 1.23 V (vs RHE), which was around 18.5 times that of Ta2O5. The OER overpotential over TFPB-1 was reduced to 0.59 V compared to 1.13 V for Ta2O5, resulting in a substantial reduction in the free energy of PEC water oxidation over TFPB-1. As a result, TFPB-1 exhibited remarkably enhanced photoelectrocatalytic activity for oxygen evolution through water oxidation.

Interfacial Elemental Analysis of Slanted Edge-Contacted Monolayer MoS2 Transistors via Directionally Angled Etching.

Edge contacts offer a significant advantage for enhancing the performance of semiconducting transition metal dichalcogenide (TMDC) devices by interfacing with the metallic contacts on the lateral side, which allows the encapsulation of all of the channel material. However, despite intense research, the fabrication of feasible electrical edge contacts to TMDCs to improve device performance remains a great challenge, as interfacial chemical characterization via conventional methods is lacking. A major bottleneck in explicitly understanding the chemical and electronic properties of the edge contact at the metal-two-dimensional (2D) semiconductor interface is the small cross section when characterizing nominally one-dimensional edge contacts. Here, we demonstrate a directional angled etching technique that enables the characterization of the interfacial chemistry at the metal-MoS2 junction when in an edge-contact configuration. The slanted edge structure provides a substantial cross section for elemental analysis of the edge contact by conventional X-ray photoemission spectroscopy, in which a simple chemical environment and sharp interface were revealed. Facilitated by the well-characterized contact interface, we realized slanted edge-contacted monolayer MoS2 transistors encapsulated by hexagonal boron nitride. The transport characteristics and photoluminescence of these transistors allowed us to attribute the efficient carrier injection to direct and Fowler-Nordheim tunneling, validating the distinct Au-MoS2 interface. The established method represents a viable approach to fabricating edge contacts with encapsulated 2D material devices, which is crucial for both the fundamental study of 2D materials and high-performance electronic applications.

Dipole-induced transitions from Schottky to Ohmic contact at Janus MoSiGeN4/metal interfaces.

Janus MoSiGeN4 monolayers exhibit exceptional mechanical stability and high electron mobility, which make them a promising channel candidate for field-effect transistors (FETs). However, the high Schottky barrier at the contact interface would limit the carrier injection efficiency and degrade device performance. Herein, using density functional theory calculations and machine learning methods, we investigated the interfacial properties of the Janus MoSiGeN4 monolayer and metal electrode contacts. The results demonstrated that the n-type/p-type Schottky and n-type Ohmic contacts can be realized in metal/MoSiGeN4 by changing the built-in electric dipole orientation of MoSiGeN4. Specifically, the contact type of Cu/MoSiGeN4 (Au/MoSiGeN4) transfers from an n-type Schottky (p-type Schottky) contact to an n-type Ohmic (n-type Schottky) contact when the contact side of MoSiGeN4 switches from Si-N to Ge-N. In addition, the Fermi level pinning (FLP) effect of metal/MoSiGeN4 with the Si-N side is weaker than that of metal/MoSiGeN4 with the Ge-N side due to the effect of intrinsic dipole and interface dipole. Notably, a simplified mathematical expression ΔV/WM is developed to describe the Schottky barrier height at metal/MoSiGeN4 interfaces using the machine learning method. These findings offer valuable guidance for the design and development of high-performance Janus MoSiGeN4-based electronic devices.

Performance Study of Ultraviolet AlGaN/GaN Light-Emitting Diodes Based on Superlattice Tunneling Junction.

In this study, we aim to enhance the internal quantum efficiency (IQE) of AlGaN-based ultraviolet (UV) light-emitting diodes (LEDs) by using the short-period AlGaN/GaN superlattice as a tunnel junction (TJ) to construct polarized structures. We analyze in detail the effect of this polarized TJ on the carrier injection efficiency and investigate the increase in hole and electron density caused by the formation of 2D hole gas (2DHG) and 2D electron gas (2DEG) in the superlattice structure. In addition, a dielectric layer is introduced to evaluate the effect of stress changes on the tunneling probability and current spread in TJ. At a current of 140 mA, this method demonstrates effective current expansion. Our results not only improve the performance of UV LEDs but also provide an important theoretical and experimental basis for future research on UV LEDs based on superlattice TJ. In addition, our study also highlights the key role of group III nitride materials in achieving efficient UV luminescence, and the polarization characteristics and band structure of these materials are critical for optimizing carrier injection and recombination processes.

Surface Microstructure Enhanced Cryogenic Infrared Light Emitting Diodes for Semiconductor Broadband Upconversion.

Broadband upconversion has various applications in solar photovoltaic, infrared and terahertz detection imaging, and biomedicine. The low efficiency of the light-emitting diodes (LEDs) limits the broadband upconversion performance. In this paper, we propose to use surface microstructures to enhance the electroluminescence efficiency (ELE) of LEDs. Systematical investigations on the cryogenic-temperature performances of microstructure-coupled LEDs, including electroluminescence efficiency, luminescence spectrum, and recombination rate, have been carried out by elaborating their enhancement mechanism and light emitting characteristics both experimentally and theoretically. We have revealed that the reason for the nearly 35% ELE enhancement of the optimized structure under cryogenic temperature and weak injection current is the efficient carrier injection efficiency and the high recombination rate in the active region. We also compare studies of the surface luminescence uniformity of the optimized LED with that of the unoptimized device. This work gives a precise description, and explanation of the performance of the optimized microstructure coupled LED at low temperatures, providing important guidance and inspiration for the optimization of broadband upconverter in the cryogenic temperature region.

Adaptive In-Sensor Computing for Enhanced Feature Perception and Broadband Image Restoration.

Traditional imaging systems struggle in weak or complex lighting environments due to their fixed spectral responses, resulting in spectral mismatches and degraded image quality. To address these challenges, a bioinspired adaptive broadband image sensor is developed. This innovative sensor leverages a meticulously designed type-I heterojunction alignment of 0D perovskite quantum dots (PQDs) and 2D black phosphorus (BP). This configuration enables efficient carrier injection control and advanced computing capabilities within an integrated phototransistor array. The sensor's unique responses to both visible and infrared (IR) light facilitate selective enhancement and precise feature extraction under varying lighting conditions. Furthermore, it supports real-time convolution and image restoration within a convolutional autoencoder (CAE) network, effectively countering image degradation by capturing spectral features. Remarkably, the hardware responsivity weights perform comparably to software-trained weights, achieving an image restoration accuracy of over 85%. This approach offers a robust and versatile solution for machine vision applications that demand precise and adaptive imaging in dynamic lighting environments.

Enhanced water splitting on (010) facet-exposed BiVO4 photoanode with improved carrier injection efficiency

Transition metal oxide semiconductors, noted for their stability and suitable bandgap, are promising photoanodes for water splitting. Surface engineering is critical to tackle issues like low carrier mobility and charge recombination, stemming from atomic arrangement and Fermi level differences. While exposing dominant crystal facets boosts photocatalytic capability, it can hinder carrier injection into the electrolyte. In this study, BiVO4 films with various facet exposures were synthesized and characterized using scanning electron microscopy and x-ray diffraction to confirm their morphology and crystalline structure. Mott–Schottky analysis was employed to investigate changes in the band structure near the semiconductor–electrolyte interface, revealing that high (010)-BiVO4 facet exposure enhances carrier separation but reduces injection efficiency. The results from photoconductive atomic force microscopy tests demonstrated that enhanced band bending at the semiconductor interface improves hole transfer. Coating the (010)-BiVO4 photoanode with MoS2 and an amorphous ZrO2 interlayer yielded a photocurrent density of 0.6 mA cm−2 at 1.2 V (vs RHE) under AM 1.5 G illumination, tripling the pristine photoanode's performance and nearly tripling water splitting efficiency. Mechanism revealing the improved photoelectrochemical performance is attributed to a greater band bending on the BiVO4 surface, enhancing hole injection dynamics. This work provides a feasible strategy for a deeper understanding of the intrinsic mechanisms of facet engineering and improving the activity of photoanodes.

Dual‐Functional Self‐Assembled Molecule Enabling High‐Performance Deep‐Blue Perovskite Light‐Emitting Diodes

AbstractGreat efforts have been made to improve the composition and structure of perovskite light‐emitting diodes (PeLEDs) through methods such as dimensional reduction or halide engineering, thereby reducing non‐radiative recombination. However, deep‐blue PeLEDs still face a deep valence band issue. The mismatched energy level alignment between the perovskite and the hole transport layer (HTL) leads to charge accumulation, resulting in imbalanced carrier transport and injection. Herein, to address the issues of imbalanced carrier injection and defect states in PeLEDs, a deep‐blue perovskite emitter using [4‐(3,6‐Dimethyl‐9H‐carbazol‐9‐yl)butyl]phosphonic acid (Me‐4PACz) as the material to promote hole transport and passivate defects is presented. The stepwise energy level structure design can effectively reduce the hole injection barrier and improve the carrier injection efficiency. Additionally, the electron‐rich P═O bond can effectively passivate the unsaturated Pb2+ in perovskite, reducing non‐radiative recombination caused by defects. Ultimately, stable deep‐blue PeLEDs (≈458 nm) are successfully fabricated with an external quantum efficiency (EQE) of 4.33%. This study provides new insights into the application of self‐assembled monolayers (SAMs) in PeLEDs.

Unraveling carrier distribution in far-UVC LEDs by temperature-dependent electroluminescence measurements

The hole transport and the carrier distribution in AlGaN-based far-ultraviolett (UVC) light emitting diodes (LEDs) emitting around 233 nm was investigated. Temperature-dependent electroluminescence measurements on dual wavelength AlGaN multiple quantum well (MQW) LEDs show a strong shift in the spectral power distribution from 250 to 233 nm with decreasing temperature. Comparing experimental data with simulation shows that the hole mobility and the electron to hole mobility ratios have a significant influence on the carrier injection efficiency (CIE) and that the change in the spectral power distribution is originating from a change in the hole distribution in the MQWs. Poor hole injection and charge carrier confinement in the AlGaN MQW active region was identified as one of the main reasons for the low CIE in far-UVC LEDs.

Dual polarization for efficient III-nitride-based deep ultraviolet micro-LEDs

The deep ultraviolet (DUV) micro-light emitting diode (μLED) has serious electron leakage and low hole injection efficiency. Meanwhile, with the decrease in the size of the LED chip, the plasma-assisted dry etching process will cause damage to the side wall of the mesa, which will form a carrier leakage channel and produce non-radiative recombination. All of these will reduce the photoelectric performance of μLED. To this end, this study introduces polarized bulk charges into the hole supply layer (p-HSL) and the electron supply layer (n-ESL) respectively (dual-polarized structure) of the DUV μLED at an emission wavelength of 279 nm to enhance the binding of carriers and increase the injection efficiency of carriers. This is because the polarization-induced bulk charge can shield the polarized sheet charge on the interface and reduce the polarization electric field. The reduced polarization electric field in p-HSL can increase the effective barrier height of the conduction band in the p-type region and reduce the effective barrier height of the valence band. The decrease in the polarized electric field of n-HSL can reduce the thermal velocity of electrons, thereby enhancing the electron injection efficiency, reducing the Shockley–Read–Hall (SRH) recombination, and increasing the effective barrier height of the valence band. The study results indicate that the electron concentration and hole concentration of a μLED with dual polarization were increased by 77.93% and 93.6%, respectively. The optical power and maximum external quantum efficiency of μLED reached 31.04 W/cm2 and 2.91% respectively, and the efficiency droop is only 2.06% at 120 A/cm2. These results provide a new approach to solving the problem of insufficient carrier injection and SRH recombination in high-performance DUV μLEDs.

Simulation of Carrier Injection Efficiency in AlGaN-Based UV-Light-Emitting Diodes

Simulation of Carrier Injection Efficiency in AlGaN-Based UV-Light-Emitting Diodes

Contact engineering for two-dimensional metal/qHP C60 van der Waals heterostructure

The fabrication of two-dimensional (2D) quasi-hexagonal phase (qHP) C60 semiconductor material offers a promising candidate for high-performance electronic devices. Selecting appropriate metals is crucial for achieving Ohmic contact (OhC) to enhance carrier injection efficiency. In this Letter, we used first-principles calculations to study the contact properties of seven 2D metal/qHP C60 van der Waals heterostructures. Metals with suitable work functions can form p-type Schottky contacts (p-ShCs), n-type Schottky contacts (n-ShCs), and OhCs. Differences in work function affect interface charge transfer, creating interface dipoles and causing band alignment deviations from the ideal Schottky–Mott limit. The calculated Fermi level pinning factors for n-type and p-type 2D metal/qHP C60 vdWh are 0.528 and 0.521, respectively. By regulating Φn and Φp based on electrostatic potential difference ΔV, we have achieved the ideal Schottky–Mott limit. We also studied the Schottky barrier height of the germanene/qHP C60 vdWh, finding that using electric field is an effective way to convert n-ShC to OhC or p-ShC. These findings provide theoretical guidance for constructing efficient 2D qHP C60 electronic devices.

Small sized of anion doping effect on semiconducting single-walled carbon nanotube network for field-effect transistors

Carbon nanotubes have shown great promise for high-performance, large-area, solution processable field-effect transistors due to their exceptional charge transport properties. In this study, we utilize the spin-coating method to form networks from selectively sorted semiconducting single-walled carbon nanotubes (s-SWNTs), aiming for scalable electronic device fabrication. The one-dimensional nature of s-SWNTs, however, introduces significant roughness and charge trap sites, hindering charge transport due to the van der Waals gap (∼0.32 nm) between nanotubes. Addressing this, we explored the effects of anion doping on the spin-coated s-SWNT random network, with a focus on the influence of the small size of halogen anions (0.13–0.22 nm) on these electronic properties. Raman and ultraviolet–visible–near-infrared optical spectroscopy results indicate that smaller anions significantly enhance doping effects through strong non-covalent anion–π interactions, improving charge transport and carrier injection efficiency in s-SWNTs, especially for n-type operation. This improvement is inversely proportional to the size of the halogen anions, with the smallest anion (fluorine) effectively transitioning the electrical characteristics of the s-SWNT network from ambipolar to n-type by reducing both junction and contact resistances through anion doping, based on anion–π interaction.

Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes

V-defects are morphological defects that typically form on threading dislocations during epitaxial growth of (0001)-oriented GaN layers. A V-defect is a hexagonal pyramid-shaped depression with six {101¯1}-oriented sidewalls. These semipolar sidewalls have a lower polarization barrier than the polarization barriers present between the polar c-plane quantum wells and quantum barriers and can laterally inject carriers directly into quantum wells in GaN-based light emitting diodes (LEDs). This is especially important, as the high polarization field in c-plane GaN is a significant factor in the high forward voltage of GaN LEDs. The optimal V-defect density for efficient lateral carrier injection in a GaN LED (∼109 cm−2) is typically an order of magnitude higher than the threading dislocation density of GaN grown on patterned sapphire substrates (∼108 cm−2). Pure-edge dislocation loops have been known to exist in GaN, and their formation into large V-defects via low-temperature growth with high Si-doping has recently been studied. Here, we develop a method for pure-edge threading dislocation half-loop formation and density control via disilane flow, growth temperature, and thickness of the half-loop generation layer. We also develop a method of forming the threading dislocation half-loops into V-defects of comparable size to those originating from substrate threading dislocations.

2D Metal Enabled Weak Fermi Level Pinning Effect and Tunable Charge Injection in Contacts with Inorganic 2D Perovskites.

Tow-dimensional (2D) perovskites have invoked extensive interest because of their good stability and intriguing optoelectronic properties. However, in practical applications, the hampered carrier transportation imposed by the vertical array of large dielectric organic cations and the generally seen Fermi level pinning (FLP) effect in conventional metal-2D semiconductors need to be solved urgently. Sb3+/Bi3+-based inorganic lead-free 2D Cs3(M3+)2X9 perovskites (M = Sb3+, Bi3+; X = Cl-, Br-, I-) are promising candidates to replace the toxic 2D hLHP. The contact properties of Cs3Sb2Cl9 with 2D metals are studied in this work to achieve tunable Schottky barrier heights (SBH). Density functional theory calculations reveal a weak FLP factor of 0.91 in the studied junctions, which is beneficial for improving the carrier injection efficiency through electrode design. Calculations of tunneling properties indicate that a Cd3C2 electrode tends to achieve low SBH and high tunneling probability, while a VS2 (H) electrode tends to realize high SBH and low tunneling probability, suggesting that diverse applications of Cs3Sb2Cl9 can be achieved through electrode engineering.

The Rise of Xene Hybrids.

Xenes, mono-elemental atomic sheets, exhibit Dirac/Dirac-like quantum behavior. When interfaced with other 2D materials such as boron nitride, transition metal dichalcogenides, and metal carbides/nitrides/carbonitrides, it enables them with unique physicochemical properties, including structural stability, desirable bandgap, efficient charge carrier injection, flexibility/breaking stress, thermal conductivity, chemical reactivity, catalytic efficiency, molecular adsorption, and wettability. For example, BN acts as an anti-oxidative shield, MoS2 injects electrons upon laser excitation, and MXene provides mechanical flexibility. Beyond precise compositional modulations, stacking sequences, and inter-layer coupling controlled by parameters, achieving scalability and reproducibility in hybridization is crucial for implementing these quantum materials in consumer applications. However, realizing the full potential of these hybrid materials faces challenges such as air gaps, uneven interfaces, and the formation of defects and functional groups. Advanced synthesis techniques, a deep understanding of quantum behaviors, precise control over interfacial interactions, and awareness of cross-correlations among these factors are essential. Xene-based hybrids show immense promise for groundbreaking applications in quantum computing, flexible electronics, energy storage, and catalysis. In this timely perspective, recent discoveries of novel Xenes and their hybrids are highlighted, emphasizing correlations among synthetic parameters, structure, properties, and applications. It is anticipated that these insights will revolutionize diverse industries and technologies.

Highly conductive polymer electrodes for polymer light-emitting diodes

Organic light-emitting diodes (OLEDs) offer the advantage of flexibility; however, the use of traditional transparent anode ITO limits further extension of their flexible characteristics. In this study, we propose employing an polymer polybenzodifuranedione (PBFDO) as a flexible transparent anode instead of the rigid ITO. To address the issue encountered during the PBFDO solution spin-coating process, we introduced n-butanol into the PBFDO conductive solution to reduce its viscosity and freezing point by modulating intermolecular hydrogen bonding interactions. Consequently, high-quality PBFDO films with high conductivity, superior transmittance, and low surface roughness were successfully obtained via spin-coating. Moreover, due to its proper work function, regular molecular stacking, and low refractive index properties, PBFDO electrode facilitate efficient carrier injection and transport as well as photon extraction. The resulting device utilizing a PBFDO anode combined with Super Yellow as the light-emitting layer exhibited excellent performance characteristics including a normal threshold voltage of 2.6 V and a maximum luminous efficiency of 12.8 cd A−1 comparable to that device based on the ITO electrode. Furthermore, flexible device also achieved satisfactory performance (7.7 cd A−1) when using the PEN substrate.

Transition‐Metal‐Doped TiO2 Nanorods with High‐Visible‐Light Response via a Simple Hydrothermal Method

Transition‐metal‐ion doping is an effective method to shorten bandgap and enhance visible‐light absorption of TiO2, but there are still some serious challenges for most doping technologies, such as nonuniform doping, severe lattice damages, metal atoms agglomeration, and inactivated impurities. Herein, a simple and universal hydrothermal method is developed to realize the effective transition‐metal ions doping of TiO2 (including Fe, Co, Mn, Cu, V, and Cr). The photoelectrochemical water splitting performances of Cr‐doped TiO2 nanorods with multifarious Cr ion valence states (Cr3+ or Cr6+ ions), various Cr‐ion concentrations, with or without oxygen vacancy activation are emphatically and systematically studied. Experiments and theoretical calculations demonstrate that the remarkably enhanced carrier separation and injection efficiencies are the key factors to improve the visible‐light photoactivity, benefiting from the homogeneous distribution of impurity atoms and the incorporation of oxygen vacancies. The Cr3+‐ion‐doped TiO2 nanorod arrays with oxygen vacancy activation (Cr3+/Ov–TiO2) displays an impressive incident photon‐to‐electron conversion efficiency of 5.4% at 450 nm visible light, far superior to the pure TiO2 of 0.03%. Furthermore, no obvious photocurrent decay is observed in the Cr3+/Ov–TiO2 photoanode after 12 h continuous light illumination.

Effect of Asymmetric InAlGaN/GaN Superlattice Barrier Structure on the Optoelectronic Performance of GaN-Based Green Laser Diode

An asymmetric InAlGaN/GaN superlattice barrier structure without the first quantum barrier layer (FQB) is designed, and its effect on the optoelectronic performance of GaN-based green laser diode (LD) has been investigated based on simulation experiment and analytical results. It is found that, compared with conventional GaN barrier LD, device performance is significantly improved by using FQB-free asymmetric InAlGaN/GaN superlattice barrier structure, including low threshold current, high output power, and high photoelectric conversion efficiency. The threshold current of LD with novel structure is 16.19 mA, which is 22.46% less than GaN barrier LD. Meanwhile, the output power is 110.69 mW at an injection current of 120 mA, which is 16.20% higher compared to conventional LD, and the wall-plug efficiency has an enhancement of 9.5%, reaching 20.27%. FQB-free asymmetric InAlGaN/GaN superlattice barrier layer can reduce optical loss, suppress the polarization effect, and improve the carrier injection efficiency, which is beneficial to improve output power and photoelectric conversion efficiency. The novel epitaxial structure provides theoretical guidance and data support for improving the optoelectronic performance of GaN-based green LD.