One issue that always strands the scaling-up development of perovskite photovoltaics is the significant efficiency drop when enlarging the device area, which is caused by the inhomogeneous distribution of defected sites1-3. In the narrow band gap formamidinium lead iodide (FAPbI3), the native impurities of PbI2 and δ-FAPbI3 non-perovskite could induce unfavored non-radiative recombination, as well as inferior charge transport and extraction 4,5.Here, we develop an impurity-healing interface engineering strategy to well address the issue both in small-area solar cell and large-scale submodule. With the introduction of a functional cation, 2-(1-cyclohexenyl)ethyl ammonium, two-dimensional (2D) perovskite with high mobility is rationally constructed on FAPbI3 to horizontally cover the film surface and vertically penetrate to the grain boundaries of 3D perovskites. Such unique configuration not only comprehensively transforms the PbI2 and δ-FAPbI3 impurities into stable 2D perovskite and realize a uniform defect passivation, but also provides interconnecting channels for efficient carrier transport. As a result, the FAPbI3-based small-area (0.085 cm2) solar cells achieve a champion efficiency over 25.86% with a notably high fill factor (FF) of 86.16%. More encouragingly, the fabricated submodules with the aperture area of 715.1 cm2 obtain a certified record efficiency of 22.46% with a good FF of 81.21%, showcasing the feasibility and effectualness of the impurity-healing interface engineering for scaling-up promotion with well-preserved photovoltaic performance.