Efficient Light-emitting Diodes Research Articles

Efficient and Bright Deep-Red Light-Emitting Diodes based on a Lateral 0D/3D Perovskite Heterostructure.

Bright and efficient deep-red light-emitting diodes (LEDs) are important for applications in medical therapy and biological imaging due to the high penetration of deep-red photons into human tissues. Metal-halide perovskites have potential to achieve bright and efficient electroluminescence due to their favorable optoelectronic properties. However, efficient and bright perovskite-based deep-red LEDs have not been achieved yet, due to either Auger recombination in low-dimensional perovskites or trap-assisted nonradiative recombination in 3D perovskites. Here, a lateral Cs4PbI6/FAxCs1- xPbI3 (0D/3D) heterostructure that can enable efficient deep-red perovskite LEDs at very high brightnessis demonstrated. The Cs4PbI6 can facilitate the growth of low-defect FAxCs1- xPbI3, and act as low-refractive-index grids, which can simultaneously reduce nonradiative recombination and enhance light extraction. This device reaches a peak external quantum efficiency of 21.0% at a photon flux of 1.75×1021 m-2 s-1, which is almost two orders of magnitude higher than that of reported high-efficiency deep-red perovskite LEDs. Theses LEDs are suitable for pulse oximeters, showing an error <2% of blood oxygen saturation compared with commercial oximeters.

Spacer cation engineering in Ruddlesden-Popper perovskites for efficient red light-emitting diodes with recommendation 2020 color coordinates

Ruddlesden-Popper perovskites (RPPs) have been demonstrated as a very promising approach for tuning the emission color of perovskite light-emitting diodes (PeLEDs). However, achieving high-performance red PeLEDs with recommendation 2020 color coordinates is still challenging due to the lack of reasonable control over the properties of RPP films. Here, we demonstrate that the judicious selection of spacer cations in RPPs affords a lever for engineering their film properties, including phase distribution, energy funneling process, trap density, and carrier mobility. Four structurally related spacer cations, benzylammonium (BZA), phenylethylammonium (PEA), 3-phenyl-1-propylammonium (PPA), and phenoxyethylammonium (POEA), are studied. Owing to narrow phase distribution, efficient energy funneling, and low trap density, the POEA-based RPP films enable efficient red PeLEDs with a peak external quantum efficiency of 10.3%, a maximum brightness of 1052 cd m−2, and excellent spectral stability. Significantly, the electroluminescence spectrum represents CIE 1931 color coordinates of (0.71, 0.29), which meets the recommendation 2020 standard (0.708, 0.292). The findings provide useful guidelines for the rational design of new organic spacer cations for RPPs with high performance.

Water-induced construction of Cs4PbBr6/CsPbBr3 heterojunction for efficient perovskite light-emitting diode

Perovskite Cs4PbBr6/CsPbBr3 heterojunction with a strongly carrier-confined effect is emerging as a promising luminescent material for perovskite light-emitting diodes (PeLEDs). However, it is a big challenge to construct the heterojunction on a molecular scale to fully excavate this confinement effect for efficient electroluminescence efficiencies of PeLEDs. Herein, we report a water-induced construction of Cs4PbBr6/CsPbBr3 heterojunction for efficient PeLEDs via adding trace water with strong polarity. Benefiting from its strong carrier confinement effect, this heterojunction has a higher exciton binding energy (94.7 meV) and a lower nonradiative decay rate constant (0.007 ns−1) compared to that of single CsPbBr3 nanocrystals (NCs) (14.1 meV and 0.031 ns−1). Based on it, the as-fabricated PeLEDs exhibit a greatly-improved maximum current efficiency of 43.62 cd A−1 and a peak EQE of 11.31%, approximately 1.5 times that of CsPbBr3 NCs (28.43 cd A−1 and 7.78%). Evidently, this work provides an important way toward the construction of Cs4PbBr6/CsPbBr3 heterojunction and then promotes the commercial development of heterojunction-like optoelectronics.

Efficient Perovskite Light-Emitting Diodes by Buried Interface Modification with Triphenylphosphine Oxide.

Metal halide perovskite films are prepared mainly by solution-based methods. However, the preparation process is prone to produce massive defects at the interface between the perovskite emitting layer and the charge transport layers, limiting the perovskite light-emitting diode device performance. Aiming at this problem, researchers have proposed many effective strategies to passivate these interface defects. However, most previous research studies only focus on modifying the perovskite top interface, and very few reports deal with the buried interface. Here, we deposited triphenylphosphine oxide (TPPO) molecules between the perovskite and the hole transport layer (HTL) and realized the buried interface modification. Adding TPPO avoids the contact recombination of the perovskite and HTL and improves the film quality by increasing the substrate wettability. Moreover, the lone pair electrons of P═O can interact with the uncoordinated lead (Pb2+) of the perovskite and passivate halogen vacancy defects, and the insulation property of TPPO helps to balance the injection of holes and electrons. As a result, a maximum external quantum efficiency (EQEmax) of 21.01% was obtained with an average of 18.4 ± 0.9% over 30 devices, and the device reproducibility was greatly enhanced.

Efficient Red Light Emitting Diodes Based on a Zero-Dimensional Organic Antimony Halide Hybrid.

Zero-dimensional (0D) organic metal halide hybrids (OMHHs) have recently emerged as a new class of light emitting materials with exceptional color tunability. While near-unity photoluminescence quantum efficiencies (PLQEs) are routinely obtained for a large number of 0D OMHHs, it remains challenging to apply them as emitter for electrically driven light emitting diodes (LEDs), largely due to the low conductivity of wide bandgap organic cations. Here, the development of a new OMHH, triphenyl(9-phenyl-9H-carbazol-3-yl) phosphonium antimony bromide (TPPcarzSbBr4 ), as emitter for efficient LEDs, which consists of semiconducting organic cations (TPPcarz+ ) and light emitting antimony bromide anions (Sb2 Br8 2- ), is reported. By replacing one of the phenyl groups in a well-known tetraphenylphosphonium cation (TPP+ ) with an electroactive phenylcarbazole group, a semiconducting TPPcarz+ cation is developed for the preparation of red emitting 0D TPPcarzSbBr4 single crystals with a high PLQE of 93.8%. With solution processed TPPcarzSbBr4 thin films (PLQE of 86.1%) as light emitting layer, red LEDs are fabricated to exhibit an external quantum efficiency (EQE) of 5.12%, a peak luminance of 5957cd m-2 , and a current efficiency of 14.2cd A-1 , which are the best values reported to date for electroluminescence devices based on 0D OMHHs.

Efficient and bright green InP quantum dot light-emitting diodes enabled by a self-assembled dipole interface monolayer.

The interfacial state between the hole transport layer (HTL) and quantum dots (QDs) plays a crucial role in the optoelectronic performance of light-emitting diodes. Herein, we reported an efficient and bright green indium phosphide (InP) QD-based light-emitting diode (LED) by introducing a self-assembled monolayer of 4-bromo-2-fluorothiophenol (SAM-BFTP) molecule to improve interfacial charge transport in LED devices. The molecular dipole layer at the interface of the QD layer and HTL not only reduces the energy barrier of holes injected into QDs through vacuum energy level shift but also inhibits the fluorescence quenching of QDs caused by the HTL. Moreover, copper ions doped into phosphomolybdic acid (Cu:PMA) is selected as the hole injection layer (HIL) into the device system based on the SAM-BFTP molecule, and as a result, a green InP QD LED (QLED) with a maximum external quantum efficiency (EQE) of 8.46% and a luminance of 18 356 cd m-2 was realized. This work can inform and underpin the future development of InP-based QLEDs with concurrent high efficiency and brightness.

Correction: Solution-processable Li-doped transition metal oxide hole-injection layer for highly efficient quantum-dot light-emitting diodes

Correction for ‘Solution-processable Li-doped transition metal oxide hole-injection layer for highly efficient quantum-dot light-emitting diodes’ by Jae Seung Shin et al., J. Mater. Chem. C, 2022, 10, 5590–5597, https://doi.org/10.1039/D1TC06117H.

Optimizing charge balance in carbon dot-based LEDs for enhanced performance

Bright green CD-based light-emitting diodes, prepared by an all solution method.

Enhanced efficiency and stability of blue perovskite light-emitting diodes through dual defect passivation

Enhanced efficiency and stability of blue perovskite light-emitting diodes are achieved through a dual defect passivation strategy.

Challenges and developments for the blue perovskite nanocrystal light-emitting diodes.

Perovskite nanomaterials have been highly thought as next-generation light emitters after recent development owing to their benefits of simple synthesis, low-cost, large-area, and wide color gamut. Encouragingly, the external quantum efficiencies (EQEs) of green, red, and near-infrared perovskite light-emitting diodes (PeLEDs) have exceeded more than 20%. However, the performance of the blue PeLEDs is still lower than other analogs, which severely limits the applications of PeLEDs in future full-color displays. Herein, we have reviewed the advances in blue perovskite NCs and their applications in blue PeLEDs. Promising blue perovskite emitters and strategies for fabricating highly efficient blue PeLEDs based on perovskite NCs are investigated and highlighted. Moreover, we point out the main challenges in blue perovskite NC LEDs including low electroluminescence efficiency (EL), spectral instability, the difficulty of charge injection, and device optimization. The perspectives for the further development of blue PeLEDs are also presented.

Highly stable lanthanide-doped CsPbI3 perovskite nanocrystals with near-unity quantum yield for efficient red light-emitting diodes.

CsPbI3 perovskite nanocrystals (NCs) are gaining popularity as promising photoactive materials for optoelectronic devices. However, their poor phase stability has caused substantial limitations in their practical application. Herein, the small-sized rare earth La cation is strategically introduced to fundamentally improve the NC phase stability against the environment, heat, and UV radiation by the partial substitution of Pb ions to suppress structural distortion and increase the formation energy. The strong interaction between La and I of the octahedra has been demonstrated to enable the effective suppression of the trap states, which promotes strengthened radiative recombination for a near-unity photoluminescence quantum yield (PLQY) of 99.3%. High energy bands have also been found for the La-doped NCs to narrow down the energy barrier for efficient hole injection. The superior optoelectronic properties of La-doped NCs promote great improvements in the perovskite light-emitting diode (PeLED) performances with a 5-fold improvement in external quantum efficiency (EQE) from 1.19 to 6.01% and 2-fold longer lifetime from 1451 to 2956 s. This work provides an effective method for small-sized metal ion-doped CsPbI3 NCs to realize high emission efficiency and phase stabilization for efficient PeLEDs.

Optimization of a triazine-based acceptor (CN-T2T) as the electron transport layer for highly efficient near-infrared perovskite light-emitting diodes

High EQE of 18.01% and radiance of 366.76 W sr−1 m−2 were achieved by simply controlling the thickness of uncommon exciplex electron acceptor 3′,3′′′,3′′′′′-(1,3,5-triazine-2,4,6-triyl) tris(([1,1′-biphenyl]-3-carbonitrile)) (CN-T2T) as alternate electron transport layer for MAPbI3 perovskite LED.

Review on the promising roles of alkali metals toward highly efficient perovskite light-emitting diodes

Alkali metals have been used to obtain high-performance perovskite light-emitting diodes. In this review, we present an overview of the advances in alkali metal ions applied in PeLEDs. Challenges and the outlook are presented for their future applications.

Defect passivation and electron band energy regulation of a ZnO electron transport layer through synergetic bifunctional surface engineering for efficient quantum dot light-emitting diodes.

Zinc oxide nanoparticles (ZnO NPs) have been actively pursued as the most effective electron transport layer for quantum-dot light-emitting diodes (QLEDs) in light of their unique optical and electronic properties and low-temperature processing. However, the high electron mobility and smooth energy level alignment at QDs/ZnO/cathode interfaces cause electron over-injection, which aggravates non-radiative Auger recombination. Meanwhile, the abundant defects hydroxyl group (-OH) and oxygen vacancies (OV) in ZnO NPs act as trap states inducing exciton quenching, which synergistically reduces the effective radiation recombination for degrading the device performance. Here, we develop a bifunctional surface engineering strategy to synthesize ZnO NPs with low defect density and high environmental stability by using ethylenediaminetetraacetic acid dipotassium salt (EDTAK) as an additive. The additive effectively passivates surface defects in ZnO NPs and induces chemical doping simultaneously. Bifunctional engineering alleviates electron excess injection by elevating the conduction band level of ZnO to promote charge balance. As a result, state-of-the-art blue QLEDs with an EQE of 16.31% and a T50@100 cd m-2 of 1685 h are achieved, providing a novel and effective strategy to fabricate blue QLEDs with high efficiency and a long operating lifetime.

Nitrogen-doped carbon dots for efficient deep-blue light-emitting diodes with CIE closely approaching the HDTV standard color Rec.BT.709.

Here, we demonstrate deep-blue carbon dots (CDs) with luminescence centered at 415 nm and PLQY exceeding 60% via nitrogen doping. A bright and high-color-purity CDs-based light-emitting diode (CLED) is achieved with an external quantum efficiency (EQE) of 1.74%, a maximum luminance of 1155.0 cd m-2, and a colour coordinate (0.16, 0.08) closely approaching the HDTV standard color Rec.BT.709 (0.15, 0.06) specification.

Sn-doped ZnO for efficient and stable quantum dot light-emitting diodes via a microchannel synthesis strategy.

ZnO nanocrystals (NCs) are widely employed as an electron transport layer (ETL) in quantum-dot light-emitting diodes (QLEDs). However, the excessive electron mobility, abundant surface defects and poor reproducibility of ZnO NC synthesis are currently the primary restrictive factors influencing the development of QLEDs. In this study, we developed Sn(IV)-doped ZnO NCs as the ETL for constructing highly efficient and long lifetime QLEDs. The introduction of Sn can reduce the surface hydroxyl oxygen defects and alter the electron transport properties of NCs, and thus is beneficial for improving the efficiency of hole-electron recombination in the emitting layer. Meanwhile, a microchannel (MC) reactor is utilized to finely control the synthesis of Zn0.96Sn0.04O NCs, enabling us to achieve uniform size distribution and consistent production reproducibility. Using the Sn(IV)-doped ZnO NCs as the ETL has led to a remarkable enhancement of external quantum efficiency (EQE) for the fabricated red QLED, from 9.2% of the ZnO only device to 15.5% of the Zn0.96Sn0.04O device. Furthermore, the T70 (@1000 cd m-2) of the Zn0.96Sn0.04O device reached 78 h, which is 1.77-fold higher than that of the ZnO only device (44 h). The present work provides an alternative ETL for efficient and stable QLEDs.

Uniform nucleation and growth of Cs3Cu2I5 nanocrystals with high luminous efficiency and structural stability and their application in white light-emitting diodes.

Copper-based ternary halide composites have attracted great attention due to their superior chemical stability and optical properties. Herein, we developed an ultrafast high-power ultrasonic synthesis strategy to realize the uniform nucleation and growth of highly luminescent and stable Cs3Cu2I5 nanocrystals (NCs). The as-synthesized Cs3Cu2I5 NCs show uniform hexagonal morphology with an average mean size of 24.4 nm and emit blue light with a high photoluminescence quantum yield (PLQY) of ∼85%. Moreover, the Cs3Cu2I5 NCs exhibit a remarkable stability during continuous eight times heating/cooling cycling tests (303-423 K). We also demonstrated an efficient and stable white light-emitting diode (WLED) with a high luminous efficiency (LE) of 41.5 lm W-1 and a Commission Internationale de l'Eclairage (CIE) color coordinate of (0.33,0.33).

Trap states engineering toward all-inorganic CsPbBr3perovskite nanocrystals for highly efficient light-emitting diodes

A trap states engineering strategy was reported for the preparation of high-quality CsPbBr3PeNCs using 4-dodecylbenzenesulfonic acid as the surface ligand, which could effectively reduce the trap states density and improve the device performance.

Highly Efficient Green InP Quantum Dot Light-Emitting Diodes by Enhancing Carrier Injection

Highly Efficient Green InP Quantum Dot Light-Emitting Diodes by Enhancing Carrier Injection

High efficiency pure blue perovskite quantum dot light-emitting diodes based on formamidinium manipulating carrier dynamics and electron state filling

Achieving high efficiency and stable pure blue colloidal perovskite quantum dot (QD) light-emitting diodes (LEDs) is still an enormous challenge because blue emitters typically exhibit high defect density, low photoluminescence quantum yield (PLQY) and easy phase dissociation. Herein, an organic cation composition modification strategy is used to synthesize high-performance pure blue perovskite quantum dots at room temperature. The synthesized FA-CsPb(Cl0.5Br0.5)3 QDs show a bright photoluminescence with a high PLQY (65%), which is 6 times higher than the undoped samples. In addition, the photophysical properties of the FA cation doping was deeply illustrated through carrier dynamics and first principal calculation, which show lower defects, longer lifetime, and more reasonable band gap structure than undoped emitters. Consequently, pure blue FA-CsPb(Cl0.5Br0.5)3 QDs light-emitting devices were fabricated and presented a maximum luminance of 1452 cd m−2, and an external quantum efficiency of 5.01 % with an emission at 474 nm. The excellent photoelectric properties mainly originate from the enhanced blue QDs emitter and effective charge injection and exciton radiation. Our finding underscores this easy and feasible room temperature doping approach as an alternative strategy to blue perovskite QD LED development.