Efficiency Droop Research Articles

Recombination efficiency in c-plane (In,Ga)N/GaN quantum wells: saturation of localisation sites versus Auger–Meitner recombination

Abstract Light emitting diodes based on c-plane (In,Ga)N/GaN quantum wells (QWs) can have >90% emission efficiency at modest current densities but this drops significantly at higher excitation, an effect known as efficiency droop that limits device efficacy at high brightness. Several explanations for this have been proposed including the saturation of carrier localisation sites at high excitation densities, resulting in a greater exposure of carriers to defects and hence a significant increase in the associated non-radiative recombination processes. Here, power- and temperature-dependent photoluminescence spectroscopy of c-plane (In,Ga)N/GaN QWs is used to investigate the relationship between the saturation of localised states and emission efficiency. For the samples studied, we find that the saturation of localised sites broadly coincides with the onset of efficiency droop. However, it is also found that as the localised states saturate with increasing excitation, the relative contribution of defect-associated non-radiative processes to overall recombination decreases rather than increases. Based on these observations and on modelling of recombination processes in the QW, it is concluded that the saturation of localised states does not significantly contribute to the reduction in emission efficiency at high excitation. Our studies rather suggest that defect-related non-radiative recombination is out-competed by radiative and Auger–Meitner recombination at the carrier densities required for saturation.

Size-dependent competitive effect between surface recombination and self-heat on efficiency droop for 250 nm AlGaN-based DUV LEDs

In this work, electrical and optical performances for 250 nm AlGaN-based flip-chip deep ultraviolet light emitting diodes (DUV LEDs) with different chip sizes are studied. Reduced chip size helps increase the light extraction efficiency (LEE) with the cost of increased surface nonradiative recombination. Nevertheless, a thin p-Al0.67-0Ga0.33-1N layer of 10 nm can manage current distribution while suppressing surface recombination and reducing light absorption simultaneously, which results in the increased optical power density. Thanks to the better current management and reduced optical self-absorption effect, the reduced Joule heating effect suppresses the thermal droop of the optical power density for a small DUV LED chip. We also find that the p-Al0.67-0Ga0.33-1N layer thickness shows very significant impact on device resistance especially for the small DUV LED chip, such that the device resistance has a remarkable increase when the p-Al0.67-0Ga0.33-1N layer is thickened to 100 nm.

N+/p+ GaN and n+/p+ Al0.10Ga0.90N tunnel junctions: a promising alternative for hole injection in deep ultraviolet light-emitting diodes

This research replaced the traditional hole source layers in a conventional LED with a tunnel junction. In conventional light-emitting diodes (LEDs) two hole injecting layers (p-GaN and p-AlxGa1-xN) have been used, in which holes have to surpass greater energy barriers that hindered holes injection. A heavily doped GaN tunnel junction (TJ) has been used as a replacement for conventionally used hole injection layers, which has reduced the energy barriers for holes and increased the electron confining ability of wells. As a result, the internal quantum efficiency (IQE) of the LED has increased from 52% to 72%. Instead of GaN TJ, Al0.10Ga0.90N – GaN hybrid tunnel junction (HTJ) has been introduced to lower the efficiency droop and raise the efficiency further to 81% simultaneously. Using TJ and HTJ, we have demonstrated that the conventional hole’s source layer can be replaced by TJs, which results in better hole injection because of reduced barrier height, increased electron confinement, greater electron–hole radiative recombination, and higher spontaneous emission intensity.

Effect of current spreading layer on Internal Quantum efficiency and optical power of flip chip gallium nitride LEDs with circular contacts

The unique properties of the Indium Tin Oxide (ITO) make it an excellent choice as a current spreading layer in Flip Chip Light Emitting Diodes (FCLEDs) and other optoelectronic devices. Herein, the performance of FCLEDs is analyzed by a precise mathematical model for the current spreading length (Ls) produced by the ITO layer under circular-shaped contacts. The expressions are formulated without approximations using ABC-model for extracting the Internal Quantum Efficiency (IQE, ηint), optical power (Pint) and Emission Intensity (EI). The thickness (tITO) and resistivity (ρITO) of the ITO layer are varied for different current densities, and their adverse effects on IQE are determined. At lower current densities, IQE increases with thickness and decreases for high resistivity of the ITO layer. At higher current densities, there is a gradual decrease in IQE irrespective of the ITO layer presence due to “Efficiency Droop”. The IQE in the proposed work is 82 % at a thickness of 50–200 nm and current density of 8 A/cm2, and the optical power is around 40 mW, showing good agreement with the experimental data, making it feasible for future high-performance FCLEDs.

Metamorphic InGaAs/InAsPSb Quantum Well Light Emitting Diodes for Operation in the Short‐Wave Infrared Region

AbstractSolid‐state infrared sources designed to emit wavelengths above 2 µm often face challenges in achieving high emission efficiency, minimizing power consumption, and reducing fabrication costs. In response, a 2.4 µm wavelength light emitting diode (LED) is developed using metamorphic In0.83Ga0.17As/InAs0.3P0.65Sb0.05 multiple quantum well (MQW) heterostructures. The substantial conduction (94 meV) and valence band offsets (300 meV) within this type‐I MQW LED architecture result in strong carrier confinement, improving electron and hole wavefunction overlap. Despite a notable lattice mismatch of 2.0% between the MQWs and InP substrate, the resulting LED wafer exhibits exceptionally low surface roughness (1.1 nm) and well‐defined, sharp interfaces within the heterostructures. Furthermore, this MQW LED exhibits favorable emission properties, including a low turn‐on field, minimal efficiency droop, and stable emission wavelength across varying injection currents. These advancements underscore the potential of such short‐wave infrared emitters for scalable applications in fields such as inspection, optical on‐chip communication, and biomedical diagnostics.

Reduction of green-gap effect for light-emitting diodes using InGaN-ZnGeN2-InGaN/GaN type-II MQW

In this work, the design of two multiple-quantum-wells (MQWs) green LEDs are investigated − (i) LED A with standard InGaN/GaN type I band alignment quantum wells (QWs), and (ii) LED B with InGaN-ZnGeN2-InGaN/GaN type II band alignment QWs. Using numerical program we obtain energy band diagram, carrier concentration, electric field, electroluminescence spectra and radiative-recombination-rate (RRR). Owing to presence of strong polarization field and compositional inhomogeneity in InGaN/GaN heterostructure, it is hard to obtain the high efficiency in wavelength of 500–600 nm, termed as ‘green-gap’ effect. Introduction of InGaN-ZnGeN2-InGaN QWs reduces the piezoelectric polarization field and enhances overlapping between electron-hole wave functions thereby increasing RRR. Moreover, holes are distributed uniformly in all QWs in the active region of LED that leads to improved emission efficiency. The proposed device, LED B exhibits 710 % more output optical power and less wall-plug efficiency droop is only 3.1 % in contrast to 82.4 % in LED A.

Ultra-low-defect homoepitaxial micro-LEDs with enhanced efficiency and monochromaticity for high-PPI AR/MR displays

The issue of brightness in strong ambient light conditions is one of the critical obstacles restricting the application of augmented reality (AR) and mixed reality (MR). Gallium nitride (GaN)-based micro-LEDs, renowned for their exceptional brightness and stability, are considered the foremost contenders for AR applications. Nevertheless, conventional heteroepitaxial growth micro-LED devices confront formidable challenges, including substantial wavelength shifts and efficiency droop. In this paper, we firstly demonstrated the high-quality homoepitaxial GaN-on-GaN micro-LEDs micro-display, and thoroughly analyzed the possible benefits for free-standing GaN substrate from the material-level characterization to device optoelectronic properties and micro-display application compared with sapphire substrate. The GaN-on-GaN structure exhibits a superior crystal quality with ultra-low threading dislocation densities (TDDs) of ~ 105 cm−2, which is three orders of magnitude lower than that of GaN-on-Sapphire. Through an in-depth size-dependent optoelectronic analysis of blue/green emission GaN-on-GaN/ Sapphire micro-LEDs from 100 × 100 shrink to 3 × 3 μm2, real that a lower forward voltage and series resistance, a consistent emission wavelength (1.21 nm for blue and 4.79 nm for green @ 500 A/cm2), coupled with a notable reduction in efficiency droop ratios (15.6% for blue and 28.5% for green @ 500 A/cm2) and expanded color gamut (103.57% over Rec. 2020) within GaN-on-GaN 10 μm micro-LEDs. Last but not least, the GaN-on-GaN micro-display with 3000 pixels per inch (PPI) showcased enhanced display uniformity and higher luminance in comparison to its GaN-on-Sapphire counterpart, demonstrating significant potentials for high-brightness AR/MR applications under strong ambient light.

Dual polarization for efficient III-nitride-based deep ultraviolet micro-LEDs

The deep ultraviolet (DUV) micro-light emitting diode (μLED) has serious electron leakage and low hole injection efficiency. Meanwhile, with the decrease in the size of the LED chip, the plasma-assisted dry etching process will cause damage to the side wall of the mesa, which will form a carrier leakage channel and produce non-radiative recombination. All of these will reduce the photoelectric performance of μLED. To this end, this study introduces polarized bulk charges into the hole supply layer (p-HSL) and the electron supply layer (n-ESL) respectively (dual-polarized structure) of the DUV μLED at an emission wavelength of 279 nm to enhance the binding of carriers and increase the injection efficiency of carriers. This is because the polarization-induced bulk charge can shield the polarized sheet charge on the interface and reduce the polarization electric field. The reduced polarization electric field in p-HSL can increase the effective barrier height of the conduction band in the p-type region and reduce the effective barrier height of the valence band. The decrease in the polarized electric field of n-HSL can reduce the thermal velocity of electrons, thereby enhancing the electron injection efficiency, reducing the Shockley–Read–Hall (SRH) recombination, and increasing the effective barrier height of the valence band. The study results indicate that the electron concentration and hole concentration of a μLED with dual polarization were increased by 77.93% and 93.6%, respectively. The optical power and maximum external quantum efficiency of μLED reached 31.04 W/cm2 and 2.91% respectively, and the efficiency droop is only 2.06% at 120 A/cm2. These results provide a new approach to solving the problem of insufficient carrier injection and SRH recombination in high-performance DUV μLEDs.

Highly reflective Ni/Pt/Al p-electrode for improving the efficiency of an AlGaN-based deep ultraviolet light-emitting diode.

In this work, we propose a highly reflective Ni/Pt/Al p-electrode for AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) with a wavelength of 276 nm. AlGaN-based DUV LEDs with traditional Al-based reflectivity electrodes suffer from device degradation and wall-plug efficiency (WPE) droop due to the Al diffusion during electrode annealing. By inserting a Pt layer between the Ni contact layer and the Al reflective layer, the contact characteristics of the p-electrode can be optimized by blocking the diffusion of the O and Al atoms, maintaining a high reflectivity of over 80% near 280 nm. Compared to the AlGaN-based DUV LEDs with Ni/Au traditional p-electrodes and Ni/Al traditional reflective p-electrodes, the WPE of the LED with a highly reflective Ni/Pt/Al p-electrode is improved by 10.3% and 30.5%, respectively. Besides, compared to the other novel reflective p-electrodes using multiple annealing or evaporation processes reported for the AlGaN-based DUV LEDs, we provide a new, to the best of our knowledge, optimization method for single evaporation and annealing p-type reflective electrodes, featured with a simpler and more convenient process flow.

Cathodoluminescence studies of the optical properties of a zincblende InGaN/GaN single quantum well

Zincblende GaN has the potential to improve the efficiency of green- and amber-emitting nitride light emitting diodes due to the absence of internal polarisation fields. However, high densities of stacking faults are found in current zincblende GaN structures. This study presents a cathodoluminescence spectroscopy investigation into the low-temperature optical behaviour of a zincblende GaN/InGaN single quantum well structure. In panchromatic cathodoluminescence maps, stacking faults are observed as dark stripes, and are associated with non-radiative recombination centres. Furthermore, power dependent studies were performed to address whether the zincblende single quantum well exhibited a reduction in emission efficiency at higher carrier densities—the phenomenon known as efficiency droop. The single quantum well structure was observed to exhibit droop, and regions with high densities of stacking faults were seen to exacerbate this phenomenon. Overall, this study suggests that achieving efficient emission from zinc-blende GaN/InGaN quantum wells will require reduction in the stacking fault density.

Efficient and droop-free AlGaN-based UV-C LED using the inverted linearly graded active region and engineered hole source layer

The poor efficiency of the aluminum gallium nitride (AlGaN)-based ultraviolet (UV)-C light emitting diode (LED) remains as the major hindrance towards its commercialization. Thus, to enhance the internal quantum efficiency (IQE) and light output power (LOP) and to mitigate the efficiency droop of AlGaN-based UV-C LED, this simulation work proposes and examines a new engineering strategy, i.e., inverted linearly graded quantum wells along with quantum barriers over a series of samples A, B and C. To further improve the characteristics of AlGaN-based UV-C LED, an engineered linearly graded p-AlGaN layer has been proposed in the device structure. This increases the electron and hole concentrations by ∼2-fold and ∼8-fold, respectively. The 1.2-fold reduction in hole effective potential barrier height improves the hole injection. Also, the 1.5-fold increase in electron effective potential barrier height limits electron spill-off from the active region. The proposed structural-engineering reduces quantum confined stark effect (QCSE) confirmed by the reduction of quantum well slopes. Reducing carrier spill-off and QCSE increases average radiative recombination rate by ∼8-fold. The maximum IQE is improved by ∼44 % and the efficiency droop is also reduced to a promising level of ∼2 % in case of the sample under consideration. Finally, the LOP increases 10-fold, promisingly. Thus, the proposed structure is supposed to be highly potential for improving the UV-C LED performance. The electroluminescence spectra show that despite the gradual differences introduced in the structure, all the samples emit at ∼276 nm with similar full width at half maximum providing a reference for the comparison.

Carrier Recombination in Nitride-Based Light-Emitting Devices: Multiphonon Processes, Excited Defects, and Disordered Heterointerfaces.

We study recombination processes in nitride LEDs emitting from 270 to 540 nm with EQE ranging from 4% to 70%. We found a significant correlation between the LEDs' electro-optical properties and the degree of nanomaterial disorder (DND) in quantum wells (QWs) and heterointerfaces. DND depends on the nanoarrangement of domain structure, random alloy fluctuations, and the presence of local regions with disrupted alloy stoichiometry. The decrease in EQE values is attributed to increased DND and excited defect (ED) concentrations, which can exceed those of Shockley-Read-Hall defects. We identify two mechanisms of interaction between EDs and charge carriers that lead to a narrowing or broadening of electroluminescence spectra and increase or decrease EQE, respectively. Both mechanisms involve multiphonon carrier capture and ionization, impacting EQE reduction and efficiency droop. The losses caused by these mechanisms directly affect EQE dependencies on current density and the maximum EQE values for LEDs, regardless of the emission wavelength. Another manifestation of these mechanisms is the reversibility of LED degradation. Recombination processes vary depending on whether QWs are within or outside the space charge region of the p-n junction.

Comparative Study on Temperature‐Dependent Internal Quantum Efficiency and Light–Extraction Efficiency in III‐Nitride–, III‐Phosphide–, and III‐Arsenide–based Light‐Emitting Diodes

This study attempts to understand and elucidate the factors limiting/determining the external quantum efficiency (EQE) of light‐emitting diodes (LEDs) depending on material systems, i.e., III‐arsenide (GaAs), III‐phosphide (AlGaInP), and III‐nitride (GaInN), via the temperature measurements (30–500 K). The behaviors of EQEs are investigated carefully in terms of the thermal droop and efficiency droop, revealing that the thermal droop in the AlGaInP and GaAs LEDs, while the efficiency droop in the GaInN LEDs, is a critical factor limiting the EQE. To deepen the insight, the EQE is separated into internal quantum efficiency (IQE) and light‐extraction efficiency (LEE). Further, the IQE is separated into radiative efficiency (RE) and injection efficiency (IE). The analysis shows that the LEE plays a significant role in the thermal droop for the AlGaInP and GaAs LEDs. Meanwhile, the IE and RE play a significant role in the EQE reduction of the blue and red LEDs at high temperatures and high current injection.

Advantages of AlGaN Tunnel Junction in N-Polar 284 nm Ultraviolet-B Light Emitting Diode

Smart, low cost and environmentally safe aluminum gallium nitride (AlGaN)-based ultraviolet-B light-emitting diodes (UV-B LEDs) are promising in real-world applications including medical as well as agricultural sciences. Higher efficiency droops, low hole injection efficiency, and high operating voltage are the key problems that AlGaN-based UV-B LEDs are facing. In this work, a smart and clean AlGaN-based UV-B LED at 284 nm emission wavelength has been studied. Here an approach is presented to electrically operate the quantum tunnelling probability by exploiting the transported carriers at the interface of p-AlGaN/n-AlGaN/n++-AlGaN tunnel junction (TJ) with moderate Si and Mg-doping levels and optimized thickness with the help of simulation study. The simulation results show that the Augur recombination rate is successfully suppressed and quite a high radiative recombination rate is achieved in the 284 nm N-polar AlGaN-based TJ UV-B LEDs, which is attributed to the improved hole injection toward the MQWs when compared to C-LED (conventional-LED). It is found that C-LED has a maximum IQE (internal quantum efficiency) of 40% under 200 A cm−2 injection current with an efficiency drop of 15%, while the TJ-LED has a maximum IQE of 93% with an efficiency droop of 0%. In addition, TJ-based AlGaN LED emitted power has been improved by 6 times compared to the C-LED structure. The emitted powers of TJ-LED increase linearly under varying current densities, whereas in the case of C-LED, the emitted power changes nonlinearly under varying current densities. This is attributed to the lower Augur recombination rate in the MQWs of N-AlGaN-based TJ UV-B LED. The operating voltages were reduced from 5.2 V to 4.1 V under 200 mA operation, which is attributed to the thickness and doping optimization in TJ and better selection of relatively lower Al-content in the contact layer. N-polar AlGaN-based TJ is explored for UV-B LEDs and the demonstrated work opens the door to epitaxial growth of high-performance UV emitters in MOCVD and MBE for a plethora of biomedical applications.

Epitaxial analysis of GaInP/AlGaInP red light-emitting diodes with ternary AlGaP quantum barriers for quantum efficiency enhancement

We have numerically analyzed Gallium Indium Phosphide (GaInP)/Aluminum Gallium Indium Phosphide (AlGaInP) red light-emitting diodes (LEDs) by utilizing ternary Aluminum Gallium Phosphide (AlGaP) quantum barriers instead of the conventional quaternary AlGaInP quantum barriers. The simulation findings show that the use of AlGaP quantum barriers in AlGaInP red light-emitting diodes leads to a significant increase in both electron and hole concentration in the quantum wells which in turn enhances the rate of radiative recombination compared to conventional (reference) red light-emitting diodes. Furthermore, the proposed LEDs have a substantial decline in efficiency droop from 38% to 32%.

Temperature-dependent electroluminescence of red high-In-content MQWs of dual-wavelength micro-LED

Temperature-dependent electroluminescence (TDEL) measurements have been employed to investigate the carrier transport and recombination processes of InGaN red micro-LED based on dual-wavelength InGaN/GaN MQWs structure. EL peak energy and carrier transport of the red micro-LED both show temperature dependence, due to temperature-induced changes in defect activation. In addition, the current density at which the blue peak of the low-In-content appears in the EL spectrum varies with temperature. As the temperature increases, the blue peak of the low In component tends to appear at higher current densities, which may be attributed to the increase in thermally activated defects hindering the injection of holes into the low-In-content MQWs further away from p-GaN. Furthermore, the IQEs of the high-In-content MQWs are estimated from the TDEL method and then reveal the temperature-dependent efficiency droop. The IQE decreases as temperature increases, particularly above 50 K, where it drops sharply due to temperature-dependent nonradiative recombination. And the two different variation trends in IQE of MQWs with high and low In content reveal a competitive mechanism in carrier distribution, implying that more escaping holes from high-In-content MQWs will further reduce red emission efficiency but enhance carrier injection and blue emission in low-In-content MQWs.

Non-heavy doped pnp-AlGaN tunnel junction for an efficient deep-ultraviolet light emitting diode with low conduction voltage.

While traditional tunnel junction (TJ) light-emitting diodes (LEDs) can enhance current diffusion and increase hole injection efficiency, their reliance on highly doped AlGaN layers to improve hole tunneling efficiency results in a higher conduction voltage, adversely impacting LED device performance. This paper proposes a non-heavy doped pnp-AlGaN TJ deep ultraviolet (DUV) LED with a low conduction voltage. By inserting the TJ near the active region, between the electron blocking layer and the hole supply layer, the need for heavily doped AlGaN is circumvented. Furthermore, the LED leverages the polarization charge in the pnp-AlGaN TJ layer to decrease the electric field strength, enhancing hole tunneling effects and reducing conduction voltage. The non-heavy doped pnp-AlGaN TJ LED effectively enhances carrier concentration in the quantum well, achieving a more uniform distribution of electrons and holes, thus improving radiative recombination efficiency. Consequently, at an injection current of 120 A/cm2, compared to the traditional structure LED (without TJ), the proposed LED exhibits a 190.7% increase in optical power, a 142.8% increase in maximum internal quantum efficiency (IQE) to 0.85, and a modest efficiency droop of only 5.8%, with a conduction voltage of just 4.1V. These findings offer valuable insights to address the challenges of high heavy doped TJ and elevated conduction voltage in high-performance TJ DUV LEDs.

Speckle-Free, Angle-Free, Cavity-Free White Laser with a High Color Rendering Index.

The freedom from efficiency droop motivates monochromatic lasers to progress in general lighting applications due to the demand for more efficient and sustainable light sources. Still, a white light based on monochromatic lasers with high lighting quality, such as a high color rendering ability, an angle-independent output, and a speckle-free illumination, has not yet been fabricated nor demonstrated. Random lasers, with the special mechanism caused by multiple scattering, the angle-free emission, and the uncomplicated fabrication processes, inspire us to investigate the feasibility of utilizing them in general lighting. In this work, a white random laser with a high color rendering index (CRI) value, regardless of pumping energy and observing direction, was performed and discussed. We also investigated the stability of white RL as its CIE chromaticity coordinates exhibit negligible differences with increasing pump energy density, retaining its high-CRI measurement. Also, it exhibits angle-independent emission while having a high color rendering ability. After passing through a scattering film, it generated no speckles compared to the conventional laser. We demonstrated the advances in white laser illumination, showing that a white random laser is promising to be applied for high-brightness illumination, biological-friendly lighting, accurate color selections, and medical sensing.

Spontaneous Emission Studies for Blue and Green InGaN-Based Light-Emitting Diodes and Laser Diodes

We investigated the efficiency droop phenomenon in blue and green GaN-based light-emitting diodes (LEDs) and laser diodes (LDs), which poses a significant challenge in high-power LEDs and is characterized by a reduction in external quantum efficiency at higher injection currents. Utilizing identical epi-structures for blue and green LEDs and LDs, with variations only in indium composition, our experiments revealed a gradual blue shift in the emission wavelengths as the injection current increased. Notably, the blue LED demonstrated a smaller shift compared to the green LED. In addition, the full width at half maximum of emission spectra increased with increasing injection current density, indicative of efficiency droop. Significantly, LDs consistently exhibited lower junction temperatures despite operating at higher current densities. This is attributed to the enhanced heat dissipation capability of the ridge waveguide LD structure, which results in a narrower emission spectrum and reduced efficiency droop compared to mesa LED structures. These outcomes highlight the efficiency of the ridge waveguide LD structure in heat dissipation from the active layer, offering crucial insights for the advancement of high-power light-emitting devices.

Study of ultraviolet light emitting diodes with InGaN quantum dots and lattice matched superlattice electron blocking layers.

Ultraviolet light emitting diodes (UV-LEDs) face the challenges including insufficient hole injection and severe electron leakage. Quantum dots (QDs) have been proven to provide three-dimensionally localized states for carriers, thereby enhancing carrier confinement. Therefore, UV-LEDs employing InGaN QDs are designed and studied in this paper. The APSYs software is used to simulate UV-LEDs. Simulation results indicate that the QDs effectively improve the electron and hole concentration in the active region. However, UV-LEDs with QDs experience efficiency droop due to serious electron leakage. What's more, the lattice mismatch between last quantum barrier (LQB) and electron blocking layer (EBL) leads to the polarization field, which induces the downward band bending at the LQB/EBL interface and reduces effective barrier height of EBL for electrons. The AlInGaN/AlInGaN lattice matched superlattice (LMSL) EBL is designed to suppress electron leakage while mitigating lattice mismatch between LQB and EBL. The results indicate that the utilization of QDs and LMSL EBL contributes to increasing the electron and hole concentration in the active region, reducing electron leakage, enhancing radiative recombination rate, and reducing turn-on voltage. The efficiency droop caused by electron leakage is mitigated. When the injection current is 120 mA, the external quantum efficiency is increased to 9.3% and the output power is increased to 38.3 mW. This paper provides a valuable reference for addressing the challenges of insufficient hole injection and severe electron leakage.