Efficiency Of Silicon Solar Cells Research Articles

Modelling and analysis of high efficiency silicon solar cell using double layers anti-reflection coatings (ARC)

The modernization that is currently taking over across the world is resulting in numerous advancements in a variety of industries, and the most notable and apparent development is the rising use of solar energy, which has become more prevalent every day. Most companies, residences, schools, and other organizations rely mostly on solar energy as the main source of electricity. It was discovered that anti-reflective coating (ARC) had been applied to solar cells with the goal of increasing power conversion efficiency, decreasing reflection loss, and improving absorption. Although a single layer of ARC is sufficient, applying an additional layer might improve the solar cell application’s effectiveness. Hence, the modeling and analysis of double layers of anti-reflection coating (ARC) with different types of materials have been investigated and evaluated using personal computer one-dimensional (PC1D) simulation software. In this study, the double-layer anti-reflection coating on the solar cell was modeled using PC1D, where this software allowed for one-dimensional simulation of the parameters required for the operation of semiconductor-based solar energy systems. The PC1D simulation reveals that SiO2/TiO2 has the highest efficiency (22.82%) and lowest reflection compared to Si3N4/TiO2 and ZnO/TiO2. Also, SiO2/TiO2 generates the highest external quantum efficiency (EQE) among ARC double layers, making it ideal for silicon solar cell applications in order to boost the solar cell’s efficiency. The results for the effects of current, voltage, reflection, and EQE of the different double layers of ARC have also been studied in this paper.

Texturization of Silicon Wafers for Solar Cells by Anisotropic Etching with Sodium Silicate Solutions

The efficiency of silicon solar cells greatly depends on the texturization of silicon wafers used in their fabrication. Texturization reduces the reflectance of the silicon surface which improves the light trapping ability of the solar cells. In this study, aqueous Na2SiO3 solutions were used as etchants in the texturization of monocrystalline silicon wafers. The main objective was to evaluate the performance of the etchant based on the silicon surface reflectance. The surface morphology and etching rate were also investigated. Results showed that Na2SiO3 solutions reduced the surface reflectance of the wafers better than other alkaline etchants. This was brought about by the formation of uniformly distributed pyramidal structures on the surface of the wafer after texturization. The effects of process parameters such as Na2SiO3 concentration, solution temperature and etching time on the reflectance were evaluated and optimized by applying ANOVA and Response Surface Method (RSM). The optimum process condition was found to be 6.2 wt% Na2SiO3, 80°C and 5 min at which the reflectance of the silicon wafer was reduced to 9.27%. Furthermore, the addition of small amounts of IPA (up to 0.03 wt%) to the Na2SiO3 solution reduced the reflectance of the wafer (9.13%) and slightly improved its wettability

Effect of MoO3/WO3 modulation on high-temperature wettability and crystallization behavior of glass and its application in solar cell

The role of glass in the metallization contact of crystalline silicon solar cells is crucial. Numerous studies have been conducted to investigate the reaction between the main components in glass and SiNx antireflection layer during sintering. Additionally, the low content component in glass plays an indispensable role in etching and wetting silicon base. The present study investigated the impact of ionic radius on glass properties through manipulation of the elemental composition of transition metals Mo and W. The results indicated a significant decrease in the characteristic temperature point of glass and an increase in wettability after the addition of MoO3 and WO3. Furthermore, the thermal expansion of glass was observed to increase with higher WO3 content. Screen printing for the preparation of silver electrodes revealed that glass-silver pastes had optimal printing properties. When the quality ratio of MoO3 and WO3 was 7:3, it effectively enhanced the precipitation of Bi2WO6 and Pb7.90Mo0.10O12.15 crystals in the glass, leaded to a reduction in the band gap of the glass. This resulted in an increased imprint of silver crystals within the glass layer, with more nano-silver crystals were deposited near the pyramid. Consequently, an optimal metallization contact was established between the silver grid and emitter. The average aspect ratio of silver grid improved from 0.415 for AG-1 to 0.469 for AG-3, which enhanced the photoelectric conversion efficiency of crystalline silicon solar cells.

Pathways toward commercial perovskite/silicon tandem photovoltaics.

Perovskite/silicon tandem solar cells offer a promising route to increase the power conversion efficiency of crystalline silicon (c-Si) solar cells beyond the theoretical single-junction limitations at an affordable cost. In the past decade, progress has been made toward the fabrication of highly efficient laboratory-scale tandems through a range of vacuum- and solution-based perovskite processing technologies onto various types of c-Si bottom cells. However, to become a commercial reality, the transition from laboratory to industrial fabrication will require appropriate, scalable input materials and manufacturing processes. In addition, perovskite/silicon tandem research needs to increasingly focus on stability, reliability, throughput of cell production and characterization, cell-to-module integration, and accurate field-performance prediction and evaluation. This Review discusses these aspects in view of contemporary solar cell manufacturing, offers insights into the possible pathways toward commercial perovskite/silicon tandem photovoltaics, and highlights research opportunities to realize this goal.

Data-Driven Tunnel Oxide Passivated Contact Solar Cell Performance Analysis Using Machine Learning.

Tunnel oxide passivated contacts (TOPCon) have gained interest as a way to increase the energy conversion efficiency of silicon solar cells, and the International Technology Roadmap of Photovoltaics forecasts TOPCon to become an important technology despite a few remaining challenges. To review the recent development of TOPCon cells, this work has compiled a dataset of all device data found in current literature, which sums up to 405 devices from 131 papers. This may seem like a surprisingly small number of cells given the recent interest in the TOPCon architecture, but it illustrates a problem of data dissemination in the field. Notwithstanding the limited number of cells, there is a great diversity in cell manufacturing procedures, and this work observes a gradual increase in performance indicating that the field has not yet converged on a set of best practices. By analyzing the data using statistical methods and machine learning (ML) algorithms, this work is able to reinforces some commonly held hypotheses related to the performance differences between different device architectures. This work also identifies a few more unintuitive feature combinations that would be of interest for further experimentally studies. This work also aims to inspire improvements in data management and dissemination within the TOPCon community.

Enhanced photovoltaic performance of silicon solar cells using a down-shift KCa2Mg2(VO4)3 phosphor.

The efficiency of silicon solar cells is still lower than theoretical values, partly due to their inability to utilize the ultraviolet and infrared portions of the solar spectrum. Herein, a novel method using a KCa2Mg2(VO4)3 phosphor with a down-shift effect to improve the photovoltaic performance of silicon solar cells and enhance the utilization of UV light in standard p-type silicon solar cells is proposed. The synthesized phosphors were mixed with an ethylene vinyl acetate (EVA) copolymer and pressed into a film, which was subsequently encapsulated in monocrystalline silicon solar cells. The results show that the addition of this film notably enhanced the photovoltaic performance of the silicon solar cells; the current density was increased by 2.89% (from 33.20 to 34.16 mA cm-2), and the photovoltaic conversion efficiency was improved by 5.69% (from 15.11% to 15.97%) at the optimal concentration compared to bare cells.

Physics of High Efficiency Silicon Solar Cell with Nanoinclusions of Lead Chalcogenides

Physics of High Efficiency Silicon Solar Cell with Nanoinclusions of Lead Chalcogenides

Efficient Silicon Solar Cells through Organic Self‐Assembled Monolayers as Electron Selective Contacts

AbstractEffective charge carrier‐selective contacts are a crucial component of high‐performance crystalline silicon (c‐Si) solar cells. Organic materials deposited via self‐assembly on the c‐Si surface are promising candidates for simplified, scalable, and cost‐effective processing of charge extraction layers. This study investigates the application of nPACz self‐assembled monolayers (SAMs), based on carbazole and phosphonic acid groups, where n (= 2, 4, or 6) is the aliphatic chain length, to facilitate electron extraction in c‐Si solar cells by tuning the work function of aluminum (Al) at the rear contact. So far, these SAM molecules are mainly applied as the hole‐selective layer in state‐of‐the‐art perovskite and organic solar cells, via anchoring on a metal oxide electrode. Here, by inserting 2PACz between amorphous silicon passivated c‐Si and Al, an electron‐selective contact with a contact resistivity of 65 mΩ cm2 is achieved and a power conversion efficiency of 21.4% with an open‐circuit voltage of 725 mV and a fill factor of 79.2% is demonstrated. Although the 2PACz displays some instability in this study, its initial performance is comparable to those achieved with conventionally used n‐type amorphous silicon. This study highlights the potential of solution‐processable organic SAMs in forming carrier‐selective contacts for c‐Si heterojunction solar cells.

Enhancement of efficiency in monocrystalline silicon solar cells

As the representative of the first generation of solar cells, crystalline silicon solar cells still dominate the photovoltaic market, including monocrystalline and polycrystalline silicon cells. With the development of silicon materials and cut-silicon wafer technologies, monocrystalline products have become more cost-effective, accelerating the replacement of polycrystalline products. In addition, the conversion efficiency of monocrystalline products increases gradually through high-efficiency cell technologies such as Passivated Emitter and Rear Cell (PERC). This paper will start with the solar cell efficiency and combine cost factor, the P-type PERC cell and additional four types of high-efficiency N-type cell technologies to improve the conversion efficiency for exploration, and will analyze and predict the future solar cell industrialization technologies. The study finally concludes that the N-type Tunnel Oxide Passivated Contact solar cell technology has a large industrial potential and could become a mainstream technology after the perc cell technology. At the same time, Interdigitated back contact cell structure and selective all-passive contact technologies are reliable paths to obtain solar cells with high conversion efficiency, integrated cost, and efficiency, depending on the advantages and compatibility of various cells. It can create conditions for the industrialization of low- cost and high-efficiency monocrystalline silicon solar cells.

Smaller texture improves flexibility of crystalline silicon solar cells

Flexible solar cells are widely researched for their potential usage in photovoltaics integrated into buildings, cars, unmanned arial vehicle and wearable electronics. The thin crystalline silicon solar cell (60–90 μm) is prone to crack due to surface texture when it is under bending. Here we investigated the effect of pyramid size on optical reflectivity and mechanical properties of silicon wafers. We find that smaller and uniform pyramids are beneficial for obtaining efficient and flexible silicon solar cells.

Investigating the effect of adding silver nanoparticles to hybrid crystalline silicon solar cells

Hybrid silicon solar cells are an implementation of solar cells which have a simple fabrication process meanwhile absorbing a wider range of light spectrums compared to common silicon solar cells, although hybrid silicon solar cells have relatively low efficiencies. Metal nanoparticles have been known to enhance the performance of solar cells due to their localized surface plasmon resonance effect. The present study evaluates the addition of silver nanoparticles to enhance the properties and performance of hybrid silicon solar cells. In this regard silver nanoparticles are added to hybrid silicon solar cells producing different layer combinations in hybrid silicon solar cells. According to the results the addition of silver nanoparticles in specific combinations may enhance the performance whereas in other combinations may destroy the photovoltaic characteristics of the hybrid solar cell. A certain combination of the hybrid silicon solar cells including silver nanoparticles has been proposed wherein the properties of the cell are enhanced due to the plasmonic effect of silver nanoparticles. However, silver nanoparticles added on the surface of the photovoltaic cells cause shading, thus decreasing the active surface of the cell and thereby reducing the efficiency of the cells. Therefore, there is an optimum surface distribution for silver nanoparticles to benefit from the localized surface plasmon resonance effect meanwhile not shading a large amount of the cell and reducing the active surface area of the cell which is evaluated in the present research. Accordingly, by adding silver nanoparticles from a solution of 50% vl concentration the efficiency of the hybrid silicon cell reached 3.7% which is a significant increase compared to the efficiency of the ordinary hybrid silicon solar cells which was 1.8%.

Improving efficiency of silicon solar cells by integrating SiO2-coated lead-free Cs3Bi2Br9 perovskites quantum dots as luminescence down-shifting layer

Lead-based perovskite quantum dots (QDs) have promising applications in optoelectronic devices, but commercial applications are limited by the potential toxicity and poor stability of lead. Meanwhile, there are lattice, polarity, and thermal expansion coefficient mismatches in integrating semiconductor materials onto the surface of photoelectronic circuit devices, resulting in high-density defects limiting the reliability of photoelectronic devices. Therefore, there is a need to investigate perovskite alternatives that are non-toxic, stable, and can be effectively coupled to silicon photonic circuits. In this paper, lead-free perovskite Cs3Bi2Br9/SiO2 QDs were synthesized. The emission wavelength falls within the 400–560 nm range, exhibiting vibrant blue photoluminescence and demonstrating exceptional air stability for a duration exceeding 60 days. Optical tests and density-functional theory (DFT) calculations show that the silica shell layer effectively binds the electron and hole wave functions, prevents photon-generated carriers from escaping, reduces surface defects, and improves the carrier recombination probability. Meanwhile, using Cs3Bi2Br9/SiO2 QDs as a luminescent down-shifting (LDS) layer in combination with a conventional silicon solar cell, the photovoltaic conversion power was increased by 1.82%. Hence, the core-shell structure is designed by the green environmental protection method to control the improvement of the PL characteristics of QDs, which opens a window for the synthesis of new barrier materials in ethanol and water systems, making the Cs3Bi2Br9/SiO2 QDs have great potential for the application of novel optoelectronic devices in the future.

Enhancing the Efficiency of Silicon Solar Cells through Nickel Doping

Enhancing the Efficiency of Silicon Solar Cells through Nickel Doping

Ce3+-Yb3+, Tb3+-Yb3+ and Pr3+-Nd3+-Yb3+ mixed-doped TeO2–ZnO–Na2O glasses for enhancing the efficiency of silicon solar cells

In general, the sunlight wavelength absorbed by silicon solar cells is mainly concentrated in the range of 600–1100 nm. Although silicon solar cells can also absorb sunlight in the ultraviolet and visible regions with <600 nm, the utilization of light is very low. In addition, some high-energy photons in the ultraviolet and visible region can cause serious damage to silicon solar panels, reducing its useful lifetime and lowering its photoelectric conversion efficiency. Therefore, in order to make full use of the light in this range, we studied three-layer light-conversion glass doped with three groups of rare-earth ion to improve the utilization rate of light in silicon solar cells and prolong the lifetime. A series of zinc tellurate glasses (TeO2–ZnO–Na2O) doped with Ce3+-Yb3+, Tb3+-Yb3+ and Pr3+-Nd3+-Yb3+, respectively, were prepared by melting quenching method. The crystalline state and interior structure of the prepared glasses are characterized by using X-ray diffraction (XRD) spectra and Raman spectra. And the lowest phonon energy of these glasses is about 773 cm−2. The photoluminescence properties of rare-earth ions doped in these glasses are studied. The results show that the near infrared emission (centered at 980 nm) of activator ion (Yb3+) is observed when the sensitizer ions (Ce3+, Tb3+, Pr3+ and Nd3+) are excited by using 430 nm, 355 nm and 488 nm ultraviolet and visible (UV–vis) photons, respectively. The down-conversion and down-shift energy transfer mechanisms between sensitizer ion and activator ion are discussed. Based on the above research, a triple-layer zinc tellurate glass sample doped with Ce3+-Yb3+/Tb3+-Yb3+/Pr3+-Nd3+-Yb3+ in a certain ratio is prepared. And the current density-voltage (J-V) curves of silicon solar cell covered with triple-layer zinc tellurate glass were tested. According to the data obtained from J-V curves, the relative efficiency (Δη) of Si solar cells covered with Ce3+-Yb3+/Tb3+-Yb3+/Pr3+-Nd3+-Yb3+ triple-layer zinc tellurate glass is increased by 2.37% compared with that of silicon solar cell covered with blank glass. So, the above results can show that the glass has important application values in improving the energy efficiency of silicon solar cells.

Contribution of the photoluminescence effect of the stain etched porous silicon in improvement of screen printed silicon solar cell performance

In this work, we investigate the potential use of porous silicon (PS) nanostructures stain etched into photovoltaic technology as one possible way to increase the silicon solar cell (SC) efficiency at low cost. The process is based on a combination of texturization and porous silicon formed by metal assisted etching which used the screen printed front grid contact. The photoluminescence (PL), the reflectivity spectra of the PS layers, spectral response and electrical measurements are presented and discussed. As a result, the short circuit current density was improved by more than 21%. We observed an increase in internal quantum efficiency (iQE) in the region where the PL of the PS layers appears and the minority carriers’ diffusion length is enhanced by more than 60 . We report the correlation between the converter PL intensity and iQE and we demonstrate that the photoluminescence properties and the increased photocurrent result in an improvement of the solar cell efficiency.

Diameter and gap controlled fabrication of periodic SiMW/SiNW arrays: A broadband absorber for high efficiency silicon solar cell

Vertically aligned and periodic silicon micro/nano-wire (SiMW/SiNW) arrays of different diameters were synthesized by combining lithography-free silica particle patterning, reactive ion etching (RIE), and modified metal-assisted chemical etching (MACE) methods. All required silica particles were synthesized, and process parameters were optimized to fabricate sub 50 nm SiNW to large size SiMW with the controlled inter-wire gap. Fabricated SiMW/SiNW array samples show a significant reduction of reflectance (7–9 %) in the silicon absorption band (300 nm–1000 nm). Additional absorption of 25–33 % compared to the planar silicon is observed in the sub-bandgap region of silicon (1100–2000 nm) for these samples, which signifies the effect of field confinement within these structures. The estimated short circuit current density (JSC) using the experimental absorption spectrum of SiMW is 49.96 mA/cm2, which is 16 % higher than the Lambertian limit of ∼43 mA/cm2. This result can lead to the theoretical efficiency of the solar cell up to 28.73 % without the inclusion of the surface passivation effect.

Multi-Functional Ethylene-vinyl Acetate Copolymer Flexible Composite Film Embedded with Indium Acetate-Passivated Perovskite Quantum Dots.

In recent years, all-inorganic cesium lead halide perovskite quantum dots have emerged as promising candidates for various optoelectronic applications, including sensors, light-emitting diodes, and solar cells, owing to their exceptional photoelectric properties. However, their commercial utilization has been limited by stability issues. In this study, we addressed this challenge by passivating the surface defects of CsPbBr3 quantum dots using indium acetate, a metal-organic compound. The resulting CsPbBr3 quantum dots exhibited not only high photoluminescence intensity, but also a remarkably narrow half-peak width of 19 nm. Furthermore, by embedding the CsPbBr3 quantum dots in ethylene-vinyl acetate, we achieved stretchability and significantly enhanced stability while preserving the original luminous intensity. The resulting composite film demonstrated the potential to improve the power conversion efficiency of crystalline silicon solar cells and enabled the creation of excellent white light-emitting diodes with coordinates of (0.33, 0.31). This co-passivation strategy, involving surface passivation and polymer packaging, provides a new idea for the practical application of CsPbBr3 quantum dots.

Micro- and nano-scale optical focusing for carrier management in silicon solar cell

Well-designed nanostructures enable increased light trapping, reducing the loss of single-pass absorption and providing precise control over the microscale optical field, offering promising opportunities for developing next-generation high-efficiency solar cells. However, whether efficient carrier management in photovoltaic devices can be achieved by controlling electromagnetic field distribution using nanostructures remains elusive. In this study, we conducted simulations to investigate this issue and demonstrated the mechanism of micro- and nano-scale optical focusing in suppressing carrier recombination and enhancing the efficiency of silicon solar cells. By keeping the optical absorption of the silicon solar cell unchanged, under microscale light focusing conditions, we observed a relative 15.3% increase in the short circuit current compared to the Lambert law, resulting in a relative efficiency enhancement of 16.3%. Analysis of energy band, carrier density, recombination current, drift and diffusion current, and carrier mobility were conducted to reveal the recombination suppression mechanism. These findings comprehensively explain previously reported experimental results using wavelength-scale dielectric nanospheres to enhance the silicon solar cell efficiency. Furthermore, the implementation of nano-scale optical focusing offers the potential to significantly reduce the thickness of the device while maintaining high efficiency.

Construction of efficient silicon solar cells through polymetallic oxidation-reduction triggered by thermite reaction

Optimal metal-semiconductor contact interface is crucial for semiconductor devices, particularly for silicon solar cells aluminum-silicon contact is a key to improve the efficiency of the cell. In this work, a new type of Sb2O3-MoO3-B2O3 glass frits that can trigger a thermite reaction was utilized to improve the Al-Si interface. The low melting temperatures of these glass frits enhance the effect of thermite reaction by providing solid-liquid contact, which enables gradient distribution of the elements and leads to differences in the valence states of the Al-Si layer at the inner and surface regions. The valence states of Al and Sb at the inner layer are higher than those at the surface, while Mo is the opposite. Metallic Mo with a matched work function can lower the potential barrier, thereby improving hole selectivity and enhancing the potential skip-step. As a result, the fabricated solar cell achieved a high open-circuit voltage, a high short-circuit current, and a low series resistance. Consequently, a power conversion efficiency of 19.94% was obtained for a monocrystalline silicon solar cell with full Al-BSF. This work not only presents a new hole-selective contact for silicon solar cells, but also introduces a new approach for regulating the distribution and valence states of interface elements for enhanced efficiency.

Effectiveness of the front and rear grids as a result of silicon solar cell metallization patterns: A study using Griddler simulator

The objective of this investigation is to evaluate the effect of metallization patterns on the front and rear grids on the efficiency of the silicon heterojunction (SHJ) cells. Griddler 2.5 PRO simulator was utilized to analyze the effects of various front grid metallization designs and geometries on open circuit voltage (VOC), short circuit density (JSC), fill factor (FF), and efficiency (ƞ) of silicon-based PV cells. Griddler 2.5 PRO is designed to assess different cell types, and gain a better understanding of the limiting factors that influence solar cell characteristics in laboratory and field settings. The finite-element method (FEM) is applied in solar cell modeling to approximate the cell plane as a network of resistors and diodes. It also features an interface for generating H-patterns and back metal grids. The simulations varied the number of busbars used on the front side metal grids of solar cells from 1 to 5 and the number of metal fingers used for grid pattern optimization from 80 to 130, with finger widths ranging from 10 to 60 µm. For optimization of efficiency and fill factor, various styles (straight, rectangular pad tapered, round pad, digital, two split, and three split) and shapes (straight, pointed, digital, apollo, and wine bottle) were explored. The front and rear contact resistances were kept constant during these simulations to obtain the best fill factor and efficiency. In this model, with 110 fingers (the finger sheet resistance of front and rear sides is kept at 3 mΩ/□) and four busbars, with two split style and straight shapes and a finger width of 25 µm, was designed to achieve maximum performance of the solar cell. Various recombination loss factors in the cells are also analyzed. The results indicate that this is one of the most efficient silicon solar cells modeled, with a fill factor and efficiency of 80 % and 19.55 %, respectively, which is noteworthy for a planar solar cell.