The effects of weak disorder on superconducting aluminum films are studied over temperatures 0.4${T}_{c}$\ensuremath{\le}T\ensuremath{\le}0.98${T}_{c}$ and resistances per square of 1.7\ensuremath{\le}${R}_{\ensuremath{\square}}$\ensuremath{\le}22 \ensuremath{\Omega}. The primary effects of disorder are found to be disorder-enhanced electron-electron scattering and thermal phase, or supercurrent fluctuations, both of which cause pair-breaking effects. This conclusion is drawn from measurement of the low-voltage resistance of low-resistance superconductor--insulator--normal-metal (SIN) tunnel junctions with aluminum as the S electrode. The effective pair-breaking rates from both processes, evaluated at ${T}_{c}$, increases linearly with ${R}_{\ensuremath{\square}}$, in semiquantitative agreement with model calculations. The electron-electron scattering rate decreases very rapidly as T decreases below ${T}_{c}$, in agreement with theory. The pair-breaking rate from phase fluctuations decreases roughly linearly with decreasing temperature. Although distinct effects, phase fluctuations, and electron-electron scattering share a common origin in electron-density fluctuations, which are enhanced by disorder. A microscopic theory of disordered superconductors incorporating both electron-electron scattering and thermal phase fluctuations is needed.