Effect Of Surface Etching Research Articles

CdTe junction phenomena

Five main areas of research on CdTe junction phenomena are reviewed in this paper: (1) the effect of surface etching and stoichiometry on the properties of Schottky barriers and heterojunctions with CdS and indium tin oxide (ITO) formed on p-type CdTe crystal; (2) the major junction transport models applicable to CdS/CdTe, CdS/ZnCdTe, ZnO/CdTe and ITO/CdTe junctions; (3) the deposition and control of the properties of p-type CdTe films using close-spaced vapor transport and the characteristics of CdS/CdTe junctions prepared with these films; (4) the successful doping of p-type CdTe films during growth by ion-beam doping methods; and (5) methods of preparing low-resistivity contacts to p-CdTe.

Effect of Surface Etching and Morphology on the Stability of CdSe / S x = Photoelectrochemical Cells

The stability of single crystal photoelectrodes in polysulfide electrolyte is shown to be a function of the etching treatment used. This is explained by changes in real electrode surface area caused by different etchants, leading to a variation in real photocurrent density. The effect of photocurrent density on stability is measured, and used to semiquantitatively explain the observed variation in stability with etching. The effect is shown to be consistent for three different crystal faces, and is extended to polycrystalline electrodes.

Effect of surface etching on domain in Gunn-diodes for pulse processing

It is shown experimentally that unetched free surfaces bulk Gunn diodes can cause domains to be quenched, although the change of low-field resistance due to etching is negligibly small. An explanation of this effect might be the influence of strong surface recombination or positive surface charges on the domain.