Sputtering Effects Research Articles

ТЕОРЕТИЧНЕ ДОСЛІДЖЕННЯ ТЕПЛОВИХ ПРОЦЕСІВ НА ВУГЛЕЦЕВИХ ЕЛЕКТРОДАХ В РЕЗУЛЬТАТІ ДІЇ ПЛАЗМИ ПРИ ГЕНЕРАЦІЇ НАНОСТРУКТУР У ВАКУУМНІЙ ДУЗІ

A mathematical model has been refined to determine the thermophysical and thermomechanical processes on electrodes during the plasma formation of nanostructures. The model takes into account the effects of electrode spots, evaporation, sputtering, and thermal stresses in the electrode bodies. Calculations of temperature distribution on the surfaces of the graphite cathode and anode were carried out, considering the conditions necessary for obtaining nanostructures. An analysis of the thermophysical processes on the surfaces of the graphite cathode and anode during the transition to the working regime was conducted. The stability of the electrodes during plasma generation of nanostructures was determined by changes in the geometry of the electrodes. Calculations of the temperature fields on the end surface of the graphite cathode showed that with a continuous increase in the cathode surface temperature, the nature of its distribution does not change fundamentally. Calculation of temperature fields along the radius of the graphite cathode at different moments in time during the transition to the working regime showed a slight impact of evaporation on the change in the cathode's geometry. Determining the temperature fields along the generatrix of the anode showed the greatest impact of evaporation on the small area of the anode closest to the cathode. The dependencies of the acting stresses on temperature for the graphite cathode and anode were obtained. Studies of the dynamics of changes in thermal stresses on the electrodes during the formation of nanostructures in a plasma environment indicate that the values of thermal stresses are far from the material's strength limit. A theoretical study of the thermophysical and thermomechanical processes on the graphite cathode was carried out and compared with experimental measurements. The calculation of the electrodes' lifespan during the creation of carbon nanostructures in a plasma environment was 2.52∙105 s. The experimental lifespan of the graphite cathode is 2.88∙105 s, which is quite close to the calculated value. The coincidence of the obtained theoretical and experimental results indicates the viability of the developed model. The article may be of interest when designing equipment for obtaining nanostructures in a plasma environment and for further research on the physical parameters of electrodes.

High efficiency femtosecond laser ablation of alumina ceramics under the filament induced plasma shock wave

Femtosecond laser filament enables energy transfer over long distances, which is of great value for studying long-range ablation. However, the energy coupling of filament with the plasma generated by the ablation process leads to a very complex behavior which limits the ablation efficiency. This study systematically investigated the ablation mechanism of laser-induced filament in alumina ceramic. The plasma shock wave was initially investigated using spectral detection techniques combined with Sedov-Taylor theory. The results indicated that the maximum plasma shock wave reached 30 MPa under the irradiated by a 1 mJ fs laser. The theoretical analysis confirmed the effectiveness of the filament-induced plasma shock wave in enhancing the ablation rate of alumina ceramic. In this context, the experimental studies were conducted with varying filament positions and pulse energies, and the corresponding ablation rates for each parameter were investigated. The filament in the ablation process was found to has a secondary sputtering effect, which is an effective contributor to enhance the ablation rate. The corresponding ablation depth reach to 550 μm while achieving an ablation rate of 3.1 μm3/μJ. Finally, the coupling mechanism between the femtosecond laser filament and the plasma shock wave was systematically revealed. This research will facilitate future laser remote ablation applications with high efficiency.

Patterning damage mechanisms for two-dimensional crystalline polymers and evaluation for a conjugated imine-based polymer

High-quality patterning determines the properties of patterned emerging two-dimensional (2D) conjugated polymers and is essential for potential applications in future electronic nanodevices. However, the most suitable patterning method for 2D polymers has yet to be determined because we still do not have a comprehensive understanding of their damage mechanisms by visualizing the structural modification that occurs during the patterning process. Here, the damage mechanisms during patterning of 2D polymers, induced by various patterning methods, are unveiled based on a systematic study of structural damage and edge morphology in an imine-based 2D polymer (polyimine). Patterning using a focused electron beam, focused ion beam (FIB) and mechanical carving is evaluated. The focused electron beam successively introduces a sputtering effect, knock-on displacement damage and massive radiolysis with increasing electron dose from9.46×107electrons nm-2to1.14×1010electrons nm-2. Successful patterning is enabled by knock-on damage but impeded by carbon contamination beyond a critical sample thickness. A FIB creates current-dependent edge morphologies and extensive damage from ion implantation caused by the tail of the unfocused beam. A precisely controlled tip can tear the polyimine film through grain boundaries and hence create a patterning edge with suitable edge roughness for certain application scenarios when beam damage is avoided. Taking structural damage and the resulting quantitative edge roughness into consideration, this study provides a detailed instruction on the proper patterning techniques for 2D crystalline polymers and paves the way for tailored intrinsic properties and device fabrication using these novel materials.

Controllable Fabrication of Gallium Ion Beam on Quartz Nanogrooves.

Nanogrooves with high aspect ratios possess small size effects and high-precision optical control capabilities, as well as high specific surface area and catalytic performance, demonstrating significant application value in the fields of optics, semiconductor processes, and biosensing. However, existing manufacturing methods face issues such as complexity, high costs, low efficiency, and low precision, especially in the difficulty of fabricating nanogrooves with high resolution on the nanoscale. This study proposes a method based on focused ion beam technology and a layer-by-layer etching process, successfully preparing V-shaped and rectangular nanogrooves on a silicon dioxide substrate. Combining with cellular automaton algorithm, the ion sputtering flux and redeposition model was simulated. By converting three-dimensional grooves to discrete rectangular slices through a continuous etching process and utilizing the sputtering and redeposition effects of gallium ion beams, high-aspect-ratio V-shaped grooves with up to 9.6:1 and rectangular grooves with nearly vertical sidewalls were achieved. In addition, the morphology and composition of the V-shaped groove sidewall were analyzed in detail using transmission electron microscopy (TEM) and tomography techniques. The influence of the etching process parameters (ion current, dwell time, scan times, and pixel overlap ratio) on groove size was analyzed, and the optimized process parameters were obtained.

Modeling swift heavy ion irradiation of substrate-supported two-dimensional material via two-temperature molecular dynamics simulations

This study employs two-temperature molecular dynamics simulations to investigate swift heavy ion irradiation of SiO2 substrate-supported two-dimensional material graphene. Material-dependent electronic and thermal properties are integrated into each region to model the energy transfer between the electronic and atomic subsystems of the studied materials. Simulations of interactions with Xe heavy ions are performed with ion kinetic energies ranging from 0.5 to 25 GeV with electronic stopping powers from ∼2.6 to 17.7 keV/nm. With the studied ion energy range, nanopores with a diameter of up to 5 nm can be formed in graphene due to the thermally driven sputtering effect, while amorphization occurs along the ion track in the SiO2 substrate. The coupling between the substrate and two-dimensional material significantly impacts the structural change due to heat transfer and atomic interactions among different layers of materials. The method applied in this work provides a valuable tool for modeling and understanding the structural modifications induced by ion irradiation in layered structures.

Influence of additional intermediate thick Al layers on the reaction propagation and heat flow of Al/Ni reactive multilayers

This study investigates the effects of sputtering and electron beam evaporation (e‐beam) on the microstructure and reactive properties of Al/Ni reactive multilayers (RML). The intermixing zone, a critical factor influencing reaction kinetics, was characterized using high‐resolution transmission electron microscopy and found to be consistently 3 nm for both fabrication methods. Differential scanning calorimetry revealed that e‐beam samples, with thicker Al layers, exhibited slightly higher total molar enthalpy and maintained high reaction temperatures despite reduced reaction velocities in comparison to sputtered samples. X‐ray diffraction confirmed the formation of both Al3Ni2 and AlNi phases in the e‐beam samples. These findings indicate that while thicker bilayer structures reduce reaction velocity, they keep thermal output and mitigate the impact of intermixing zones, leading to similar total molar enthalpy. This analysis underscores the significance of deposition technique and bilayer thickness in optimizing the performance of Al/Ni RML, offering the possibility to establish different phase formations in thicker RML. It advances the control over the reactive properties of reactive multilayers in their applications, for example reactive bonding.This article is protected by copyright. All rights reserved.

Control of the preferential orientation and properties of HiPIMS and DCMS deposited chromium coating based on bias voltage

This study investigates the effects of varying bias voltages on the crystallographic orientation and properties of DCMS + HiPIMS-deposited chromium coatings. Under bias voltages varying from 100 to 500 V, dense Cr coatings were obtained, and the deposition rate decreased by 13 %. The bias voltage significantly impacts the hardness, crystallographic orientation, electrical conductivity, and bonding strength of the coating. As the bias voltage increases, the hardness of the Cr coating gradually increases. The crystallographic orientation of the coating is governed collectively by surface energy, strain energy, and sputtering effects. The preferential crystallographic orientation of the Cr coating transitions from (222) to (110), subsequently changing to a mixed preferential crystallographic orientation of (110), (211), and (222). Under the combined influence of thermal effects and ion bombardment, a (110) preferential crystallographic orientation was obtained at a bias voltage of 300 V, featuring moderate hardness and optimal wear resistance. This study establishes that the electrical characteristics of the coatings have a significant correlation with bias voltage levels.

Incremental Feeding of Perovskite Powders: Angstrom‐Precision Growth for Single‐Source Solar Cell Fabrication

Vacuum‐based deposition of halide perovskites receives a lot of attention for its proven scalability and conformal depositions. Co‐evaporation has remarkable success, but efficiencies continue to lag behind their solution‐based counterparts. This is in part attributed to the complex sublimation behavior of some organic ammonium precursor salts and the increased complexity of the absorber materials, requiring the use of four or more sources in a conventional co‐evaporation setup. The latter has driven work into single‐source methods with flash evaporation presented as one such method. However, flash evaporation processes typically evaporate all material in a single batch, leading to short deposition times at high temperatures. Particle sputtering effects seen at these high temperatures drive processes toward low temperatures where prolonged exposure causes degradation. Here, a pulse‐driven incremental powder feeding system is presented. This method is capable of stable flash evaporation rates for >1 h, with controlled rates as low as 1.5 Å per pulse (±0.89). The feasibility of this method is demonstrated for three different perovskite compositions: FAPbBr3, MAPbI3, and FA1−xMAxPbSnI3:SnF2. Furthermore, FAPbBr3 and MAPbI3 are integrated into all vacuum‐processed thin‐film solar cells leading to power conversion efficiencies (PCE) of ~4% and 10%, respectively.

Study of Cation Distribution and Photocatalytic Activity of Nonthermal Plasma-Modified NiZnFe2O4 Magnetic Nanocomposites.

In this study, NiZnFe2O4 composite was synthesized using a sol-gel route and subjected to nonthermal plasma treatment for tailoring their cations' distribution and physicochemical, magnetic, and photocatalytic properties. Microwave plasma treatment was given to the composites for 60 min in support of postsynthesis sintering at 700 °C for 5 h. X-ray diffraction (XRD) analysis was conducted on pre- and postplasma-modified ferrite composites to identify phase-pure cubic spinel structure and cations' distribution. The cation distributions were measured from the ratio of XRD intensity peaks corresponding to (220), (311), (422) and (440) planes. The intensity ratio of plasma-treated ferrite composites decreased compared to that of pristine composites. The crystallite size and lattice constant were increased on plasma treatment of the composite. The morphological analysis showed nanoflower-like structures of the particles with an increased surface area in the plasma-treated composites. The plasma oxidation and sputtering effects caused a reduction in the nanoflower size. The energy bandgap increased with a decrease in particle size due to plasma treatment. The rhodamine B dye solution was then irradiated with a light source in the presence of the nanocomposites. The dye degradation efficiency of the composite photocatalyst increased from 80 to 96% after plasma treatment.

Hardness and fracture toughness enhancement in transition metal diboride multilayer films with structural variations

The simultaneous enhancement of hardness (H) and fracture toughness (KIC) through the formation of superlattice structures challenges the conventional belief that these quantities are mutually exclusive. Here, this approach has been applied to the transition metal diborides, whose inherent brittleness severely restricts their application potential. The mechanical properties of TiB2/TaB2 systems as a function of bi-layer period Λ are investigated, combining theoretical and experimental approaches. Density Functional Theory is used to investigate the structural stability and mechanical properties of stoichiometric hexagonal TiB2/TaB2 superlattices for Λ = 3.9 – 11.9 nm. The calculations predict the highest H = 38 GPa and KIC (100) of 3.3 MPa.m1/2 at the value of Λ = 5.2 nm. Motivated by the theoretical results, multilayer films with Λ = 4–40 nm were prepared by direct current magnetron sputtering. Due to the sputtering effects, the deposited diboride films differ significantly from the view of stoichiometry and structure. A detailed structure investigation reveals TiB2/TaB2 in form of superlattices exhibiting coherent interfaces for Λ = 4 nm. For higher Λ, parts of TaB2 layers transform from the crystalline to the disordered phase. These transformations are reflected in the mechanical properties as measured by nanoindentation and micromechanical bending tests. The evolution of hardness follows Hall-Petch behavior, reaching a maximum of 42 GPa at Λ = 6 nm. Enhancing fracture toughness involves more complex mechanisms resulting in two KIC maxima: 3.8 MPa.m1/2 at Λ = 6 nm and 3.7 MPa.m1/2 at Λ = 40 nm.

Magnetron sputter deposition of boron carbide in Ne and Ar plasmas

Conventional magnetron sputter deposition of B4C uses Ar as the working gas. Here, we explore the magnetron sputter deposition of B4C with a Ne plasma, which is expected to exhibit larger sputtering yields than Ar. We study properties of films deposited with different substrate tilt angles with the magnetron source operated in either direct-current (DC) or radio-frequency (RF) mode in an Ar or Ne plasma. Results show that the B4C film properties are determined by a combination of sputtering ballistics and effects of the working gas on the plasma discharge and gas phase scattering of depositing species flux. At constant discharge power, deposition rates for Ar and Ne plasmas are similar, which is attributed to balancing effects of a higher ballistic sputtering yield of Ne and lower ion flux to the target. Both depositing B and C neutral species and bombarding ions have higher energies for the case of Ne plasmas. Films deposited with the RF-driven Ne plasma exhibit a uniform non-columnar structure, lowest oxygen impurity content, and highest mass density and mechanical properties at a cost of Ne incorporation and larger compressive residual stress.

Argon ion sputtering bridging plasma nitriding and GLC film deposition: Effects on the mechanical and tribological properties

A duplex coating consisting of a nitrided layer and a GLC (Graphite-like carbon) film was deposited on the surface of the M50NiL steel via a one-step process in a plasma nitriding system. The influence of argon ion sputtering, a critical process bridging plasma nitriding and GLC film deposition, was studied. Effects of argon ion sputtering on the growth of the GLC film were investigated by means of Raman spectroscopy, scanning electron microscopy and transmission electron microscopy. The mechanical and tribological properties of the duplex coating were evaluated by a Vickers hardness tester, a scratching tester and a rotating ball-on-disc tribometer. Results reveal that pre-treatment by ion sputtering improves the surface condition of the nitrided layers and increases its surface energy, thus facilitating nucleation growth and GLC film adhesion. The combined effect of better film-substrate adhesion, strong interfacial chemical interaction and the self-lubricating features of the GLC films are the main reasons for the excellent tribological properties of the coating. This study may provide a new idea for optimizing the duplex coating (nitrided layer + GLC film) with excellent tribological properties and high durability.

Atomic-level insight into process and mechanism of ion beam machining on aluminum optical surface

Polycrystalline Al workpieces go through a complex surface atom sputtering and surface/subsurface atom diffusion throughout the ion beam machining process that plays a critical role in determining machining quality of optical mirror surfaces. Here, we leverage molecular dynamics method for the first time to reveal the machining mechanism and the polycrystalline effect of aluminum during ion beam sputtering, in term of cascade collision, atom trajectory, sputtering yield, and surface characteristic. Polycrystalline Al presents a significant low potential energy state, leading to milder cascade collision and weaker sputtering effects than monocrystalline Al during ion beam machining. The atom trajectory demonstrates irregular variation as the atom diffusion is blocked by grain boundary (GB) in polycrystalline Al, leading to the relief microstructure and poor surface quality. With incident ions increasing, the GBs are broken and atom diffusion enhancing, as well as lower subsurface defects and better finishing surface quality. The microscopic morphology evolves into gravel microstructure. Simulation results also reveal that atom diffusion will benefit from high ion concentration and low ion energy. Sputtering yield variation is more sensitive to ion energy. To acquiring better finishing surface quality of Al without influencing machining efficiency, ion concentration must be increased while the ion energy needs to be decreased appropriately but a large number of cascading collisions need to be ensured.

Effects of Ar Ion Sputtering on Surface of ZnO Polycrystalline Thin Films Measured by XPS

Effects of Ar Ion Sputtering on Surface of ZnO Polycrystalline Thin Films Measured by XPS

Material informatics for functional magnetic material discovery

Functional magnetic materials are used in a wide range of “green” applications, from wind turbines to magnetic refrigeration. Often the magnetic materials used contain expensive and/or scarce elements, making them unsuitable for long term solutions. Further, traditional material discovery is a slow and costly process, which can take over 10 years. Material informatics is a growing field, which combines informatics, machine learning (ML) and high-throughput experiments to rapidly discover new materials. To prove this concept, we have devised a material informatics workflow and demonstrated the core components of natural language processing (NLP) to extract data from research papers to create a functional magnetic material database, machine learning with semi-heuristic models to predict compositions of soft magnetic materials, and high-throughput experimental evaluation using combinatorial sputtering and high-throughput magneto-optic Kerr effect (MOKE) magnetometry. This material informatics workflow provides a quicker, cheaper route to functional magnetic materials discovery.

Effects of the growth parameters on the surface quality of InN films

On the basis of the improved Stillinger–Weber potential model, the growth process of an indium nitride (InN) film on a gallium nitride (GaN) substrate has been simulated by molecular dynamics. The effects of growth conditions, including the incident energy, polarity of the surface of the GaN substrate, substrate temperature, and deposited N:In atomic ratio, on the surface quality of the InN film have been investigated. We find that atoms with high incident energy have high mobility, which significantly improves the structures of the protrusions and pits on the surface of the film, thereby enhancing the surface quality. However, too high incident energy enhances the sputtering effect of the deposited particles on the surface atoms of the substrate and the destruction of the film, thereby reducing the density. On the basis of the optimal incident energy, the difference in the growth mode of InN films on the Ga-termination polarity surface and N-termination polarity surface is analyzed. At low temperatures, a three-dimensional island growth mode is present on the N-termination polarity surface and a two-dimensional layer growth mode is present on the Ga-termination polarity surface. It is easier to produce InN films with excellent surface quality on the Ga-termination polarity at low temperatures. Furthermore, according to the results obtained under different substrate temperatures and atomic deposition ratios, in an In-enriched environment, excessive In atoms are prone to form agglomerated island structures on the film surface, and the low-temperature substrate is more prone to produce an InN film with high surface quality. In an N-enriched environment, excessive N atoms combine with In atoms on the film surface to form a stepped island structure, and they are more prone to grow into an InN film with high surface quality on a high-temperature substrate.

Atomic Layer Etching of GaN and AlGaN Using CH4/H2, H2 and HCl Chemistry

Modern microelectronic components for high-power and high-frequency applications require reliability and reproducibility of the production processes. Atomic layer etching (ALE) represents a key technology for achieving these requirements.An ALE sequence is characterized by a chemical modification step that affects only the top atomic layer of the surface (adhesion) and an ion assisted non-reactive inert gas etching step that removes only this chemically modified area due to creation of volatile byproducts. These two steps are separated by inert gas purge. This grants the etching of single atomic layers. The etching step can be triggered by thermal energy or kinetic energy by impinging particles (e.g. ion bombardment by a plasma). The low energy required for ALE guarantees low-damage etching.In literature ALE processes using Cl2 are often reported. In this work, the results of plasma-enhanced ALE of GaN and AlGaN using different chemistries of CH4/H2, H2 and HCl as etch gases are presented. The experiments were performed with a highly customized etch facility equipped with a capacitively coupled plasma source (CCP, 60 MHz) and a substrate bias generator (RF, 2 MHz). The investigations were carried out on epitaxially deposited GaN on sapphire with masks of protective resist and SiO2 as well as GaN-AlGaN heterostructures with patterned SiO2 maskings. For process analysis optical emission spectroscopy (OES) was carried out. The etching rate and roughness were determined by ellipsometry and atomic force microscopy (AFM) as well as scanning electron microscopy (SEM).Observations by OES indicate a successful excitation and dissociation of the etching molecules. With rising plasma powers physical sputtering effects were revealed. At the beginning of the process development continuous etching processes were examined. With CH4/H2 chemistry using GaN samples it was found that the etching behavior is strongly influenced by the type of masking material. Protective resist resulted in a low etch rate of 7.5 nm/min and significant damage of the masking material. The cause of this behavior is assumed to be redeposition of material by interaction of methane, resist, and plasma. With the change to a hard mask of SiO2 etch rates of 45 to 72 nm/min were achieved, increasing with RF-power and CH4/H2 ratio. Adding methane led to detrimental side effects such as dendrite growth and wall formation on the transient region of unmasked to former masked sample areas. In the further development of the ALE process an etch chemistry using only hydrogen as the chemical etchant was used resulting in an etch per cycle (EPC) of about 3 Å for GaN samples. Further investigations of ALE with hydrogen etch chemistry on GaN-AlGaN samples revealed that AlGaN, in contrast to pure GaN, could not be etched successfully with this chemistry.Substituting CH4/H2 or H2 to HCl enables the etch of AlGaN. The investigations carried out indicate that this etching process is also a self-limiting ALE. AFM measurements revealed an EPC of 1.2 Å for lower RF-powers (50 W). Increasing the RF power to 150 W only slightly enhance the EPC to 2.0 Å. The surface roughness tends to decrease with rising RF-power from 50 to 300 W.

Anomalous Nernst effect in perpendicularly magnetized τ-MnAl thin films

τ-MnAl is interesting for spintronic applications as a ferromagnet with perpendicular magnetic anisotropy due to its high uniaxial magnetocrystalline anisotropy. Here, we report on the anomalous Nernst effect of sputter deposited τ-MnAl thin films. We demonstrate a robust anomalous Nernst effect at temperatures of 200 and 300 K with a hysteresis similar to the anomalous Hall effect and the magnetization of the material. The anomalous Nernst coefficient of (0.6 ± 0.24) µV/K at 300 K is comparable to other perpendicular magnetic anisotropy thin films. Therefore, τ-MnAl is a promising candidate for spin-caloritronic research.

Low-energy ion beam erosion of Si with simultaneous co-deposition of metallic surfactants: Experimental and simulated data

Ion beam erosion of Si under co-deposition circumstances supports the formation of surface patterns on the nano- and micrometer scale. To evaluate the effect of surfactant sputtering within a setup relevant for ultra precision surface finishing, this work is presented. We present data for samples prepared with Ar ion beam erosion, at low ion energy. Al, Cu, steel, Cr, Ni, Mo, Ti, Ta, Zn and Si were chosen as co-deposition material. Simultaneous irradiation of the co-deposition material and the Si samples were performed with a broad beam ion source. The structuring and pattern formation are discussed with SEM and AFM measurements. It was shown that the evolution of structures on the substrate is induced by the silicide-forming metals. This corresponds with a higher surface roughness. Whereas the non-silicide-forming metals did not show patterning, and accordingly, lower surface roughness. Measurements regarding the Si removal rate showed, that it depends on the co-deposition material. Supporting simulation data proposed that the effect of the co-deposition material on the Si removal is determined by the combination of sputtering and scattering properties of the co-deposition material. The ratio of scattered Ar ions to sputtered metal particles describes the effect on the removal change. For metals which tend to higher scattering, the removal is enhanced. This applies for most of the metals with higher atomic number. Whereas the metals with lower atomic number favor self-sputtering, which results in an decreased Si removal.

Global Hall MHD Simulations of the Solar Wind Implantation Flux on the Lunar Surface

The solar wind can directly interact with the lunar surface and provide an important source for surface space weathering and water generation. Here we study the solar wind implantation flux on the lunar surface with global Hall MHD simulations. The shielding effects of both the Earth’s magnetosphere and lunar magnetic anomalies are considered. It is found that a large-scale lunar mini-magnetosphere can be caused by the solar wind interaction with the magnetic anomalies on the lunar far side, which causes a large shielding area on the surface. In addition, the Earth’s magnetosphere brings a longitudinal variation in the implantation flux, with minimum fluxes at 0° longitude. With the integrated flux over a lunation, we find that there are some local cavities on the implantation flux map, which are colocated with both the magnetic anomalies and the lunar swirls. Further studies show that there is a south–north asymmetry in the implantation flux, which can be used to explain the lower water content observed in the southern hemisphere. Our results provide a global map of the solar wind implantation flux on the lunar surface and are useful for evaluating the large-scale effect of solar wind implantation and sputtering on the space weathering and the water or gas generation of the surface.