Effect Of Post-annealing Treatment Research Articles

Experimental Investigation on Earing Behavior of Aluminum/Copper Bimetal Sheet

The effect of post-annealing treatment on the texture evolution of an Al/Cu bimetal sheet as well as on the earing behavior was investigated. The earing behavior was tracked by means of measuring plastic anisotropy and deep drawing. The analysis texture evolution for as- rolled and annealed samples was performed by X-ray diffraction. The study results show thatr= � r value increases and becomes positive when annealing temperature rises up to 300 � C, in the meanwhile, a transition was observed from 45 to 0/90 � earings. The mismatch in texture evolution between Al-side and Cu-side specimens was investigated. The typical recrystallization texture of Cu-side specimens mainly consists of a cube-orientation with its twins (CT) and cube texture develops at anneal temperature higher than 200 � C. However, cube texture becomes the main component in Al-side specimen annealed at the temperature higher than 300 � C. The mismatch in texture evolution between aluminum and copper has profound effect on the earing behavior of Al/Cu bimetal sheet. The analysis results of texture and plastic anisotropy were inductively reasoned to construct a prediction model of a Al/Cu bimetal material on earing. The earing behavior of Al/Cu bimetal material is depicted as a compromised result of the growth and decline in some certain texture components, which is agreement with the experimental findings obtained in this study. (doi:10.2320/matertrans.47.2434)

Influence of annealing on the properties of ZnO:Ga films prepared by radio frequency magnetron sputtering

Transparent conducting gallium-doped Zinc Oxide (ZnO:Ga) thin films were prepared on glass substrates by r.f. magnetron sputtering technique at low substrates temperature. The effects of post-annealing treatment on structural, electrical and optical properties of ZnO:Ga films were investigated. The results show that the annealing treatment leads to substational changes in the structural, electrical and optical characteristics of ZnO:Ga thin films. The electrical resistivity and the average transmittance of ZnO:Ga films were improved by annealing in vacuum ambient. The average transmittance increases from 85% to more than 90% and the electrical resistivity decreases from 1.13×10 −3 Ωcm to 5.4×10 −4 Ωcm after annealing treatment.

Growth and Characterization of CeO2 Films on Sapphire Substrates by Sputtering Process

Two-inch-diameter CeO2 films on R-plane (1*BAR*1*BAR*02) sapphire substrates have been prepared using an on-axis rf magnetron sputtering method. The effects of postannealing treatment, sputtering gas pressure and substrate temperature on the orientation, crystallinity and surface morphology of the CeO2 films have been investigated. The (100)-preferred CeO2 films with high crystallinity are grown at 820° C and 0.15 Torr and have a full width at half-maximum value of the rocking curve of (200) planes of 0.15°. The spatial variation of thickness of the CeO2 films across the 2-inch substrate is about 5.8%. The c-axis oriented YBa2Cu3Ox (YBCO) films grown on sapphire substrates with a (100)-preferred CeO2 buffer layer of 100 nm are made. The YBCO films have superconducting properties with the T c being 88–90 K and J c (77 K, 0 T) being (1–3)×106 A/cm2.