Effects Of Electronic Devices Research Articles

Analysis of the Radiation Field Generated by 200-MeV Electrons on a Target at the CLEAR Accelerator at CERN

The radiation showers generated by the interaction of high-energy electrons with matter include neutrons with an energy distribution peaked at the MeV scale, produced via photonuclear reactions, allowing measurements of neutron-induced Single-Event Effects in electronic devices. In this work we study a setup where the 200-MeV electron beam of the CLEAR accelerator at CERN is directed on an aluminum target to produce a radiation field with a large neutron component. The resulting environment is analyzed by measuring the Single-Event Upset (SEU) and Latchup rates in well-characterized SRAMs, as well as the Total Ionizing Dose in passive Radio-Photo-Luminescence dosimeters, and by comparing the results with predictions from FLUKA simulations. We find that a lateral shielding made of lead protects the SRAMs from an excessive TID rate, yielding an optimal configuration for SEU measurements, particularly in SRAMs that are highly sensitive to MeV-scale neutrons. This setup provides an interesting complementary neutron source with respect to standard neutron facilities based on spallation targets or radioactive sources.

Electromagnetic Assessment of UHF-RFID Devices in Healthcare Environment

In this work, the evaluation of electromagnetic effect of Ultra High Frequency Radio Frequency Identification (UHF-RFID) passive tags used in the healthcare environment is presented. In order to evaluate exposure levels caused by EM field (865–868 MHz) of UHF-RFID readers, EM measurements in an anechoic chamber and in a real medical environment (Hospital Universitario de Canarias), as well as simulations by 3D Ray Launching algorithm, and of biophysical exposure effects in human models are presented. The results obtained show that the EM exposure is localized, in close vicinity of RFID reader and inversely proportional to its reading range. The EM exposure levels detected are sufficient to cause EM immunity effects in electronic devices (malfunctions in medical equipment or implants). Moreover, more than negligible direct effects in humans (exceeding relevant SAR values) were found only next to the reader, up to approximately 30% of the reading range. As a consequence, the EM risk could be firstly evaluated based on RFID parameters, but should include an in situ exposure assessment. It requires attention and additional studies, as increased applications of monitoring systems are observed in the healthcare sector—specifically when any system is located close to the workplace that is permanently occupied.

Neutron-Induced Radiation Effects in UMOS Transistor

Ground level electronics and avionics systems may suffer from radiation effects induced by neutrons. Neutrons can induce radiation effects in electronic devices via fusion-evaporation nuclear reactions, but few studies have been reported for technologies such as UMOSFET. In this work, estimates and experimental studies on neutron-induced radiation effects via nuclear reactions in a Si-based UMOSFET are presented. Methods for probability estimates of neutron-induced Single-Event Effects (SEEs) in Si-based power transistors and neutron beam energy measurement is presented. The energy spectrum of a UMOSFET subject to fast neutron irradiation was then compared to that of a high charge collection efficiency silicon particle detector.

TCAD simulation analysis of vertical parasitic effect induced by pulsed γ- ray in NMOS from 180 nm to 40 nm technology nodes

The parasitic effect inside metal oxide field effect transistor regarded as the basic structure of large scale digital circuits, has long been considered as an important factor affecting the disturbance, upset and latchup of integrated circuits in pulsed γ-ray radiation environment. To investigate the turn-on mechanism of vertical parasitic effect in NMOSFET induced by pulsed γ-ray radiation, the 40 nm, 90 nm and 180 nm NMOSFET device models are constructed by TCAD and the normal electrical characteristics are calibrated. The trend of vertical parasitic triode current gain, the turn-on conditions of vertical parasitic triode and their influence on working state of NMOSFET are obtained. The simulation results are shown below. 1) The disturbance of well potential inside NMOSFET induced by pulsed γ-ray radiation is the main reason for the turn-on of vertical parasitic triode. 2) When vertical parasitic triode is turn-on, the large secondary photocurrent will be generated inside NMOSFET which will affect the working state of the transistor. 3) The current gain of vertical parasitic triode in NMOSFET decreases with the technology node decreasing. The results provide a theoretical basis for studying the transient ionizing radiation effects of electronic devices.

Effects of Electronic Devices and Internet Addiction on Sleep and Academic Performance Among Female Egyptian and Saudi Nursing Students: A Comparative Study.

IntroductionThe widespread availability of Internet access and increasing rate of electronic device usage has helped enlighten the world community through copious applications, information resources, and other benefits. However, both the lack of controlled behavior and excessive Internet usage have resulted in a variety of difficulties that can hinder user achievement in many areas.ObjectivesThis study investigated the prevalence of Internet and electronic device addiction among Egyptian and Saudi nursing students, with the aim of identifying any effects on sleep and academic performance.MethodsA cross-sectional comparative research design was employed among a systematic random sample comprised of 920 Egyptian and Saudi female nursing students. All participants completed the Young-Internet Addiction Test (IAT), Mobile Phone Involvement Questionnaire (MPIQ), and Epworth Sleepiness Scale (ESS).ResultsSevere Internet Addiction (IA) detected in 42.69% and 10.31% of Saudi and Egyptian participants, respectively. However, Saudi participants were more likely to report high rates of mobile phone usage (P < 0.001), while Egyptian participants tended to score higher on the ESS (17.47 ± 3.99 vs. 16.8 ± 3.83; P = 0.024). For all participants, IAT and MPIQ scores were correlated with ESS results, while IA was specifically associated with poor academic performance. Finally, MPIQ scores were inversely correlated with academic performance for Saudi participants.ConclusionSmartphone and Internet addiction were notable problems for the Egyptian and Saudi nursing students investigated in this study. Importantly, these conditions adversely affect academic performance and other activity engagement in addition to inducing excessive daytime sleepiness.

Effects of Electronic Devices on Vision in Students Age Group 18-25

Purpose: To increase understanding about the damaging effects of light rays on eyesight. To investigate frequency of people affected from light rays electronic devices. Study design: Cross sectional study. Place and Duration of Study: Riphah International University Lahore and duration of study was six months from June 2020 to December 2020. Materials & Methods: A six months cross sectional study with convenient sampling method was conducted at Riphah international university Lahore from June 2020 to December 2020. The age of the individuals was between 18 years–25 years. Individuals who fulfill the inclusion criteria were chosen from University. A proforma was filled regarding detailed history of use of electronic devices other visual problems associated with it. Results: In present study 200 students were participated who has been using electronic devices. In this 100 students were male and 100 were females. 60% were emmetropic, 27.5% were myopic, 5.5% were hyperopia and 7.0% were astigmatic. 40% individuals were using smartphones from 11 years-13 years, 20.5% using from 8 years-11 years and 25% using from 4 years-7 years. The purpose of using these electronic devices in 96 individuals was using smartphone only for social networking. Most of them (130) participants were using smartphone and laptops. Usage of these electronic devices for more than 4 hours–6 hours was observed in 60 members. Among these individuals most of them were using these electronic devices by lying on the bed and some were also using in cervical flexion position. Conclusion: The overall research identified the smartphone / any electronic devices used so longer had bad effect on vision most particularly myopia occurred. This research suggests that constant and extreme utilization of smartphone and other electronic devices should be avoided.

Ranking of Fault Mitigation Techniques for Spatial Radiation in Commercial Off-the-Shelf Field Programmable Gate Array

Nowadays, Field Programmable Gate Array are employed in several commercial applications in the space systems. This article presents a current survey about mitigation techniques for radiation effects in electronic devices that are specific for Commercial Off-the-Shelf. The techniques are classified and insert in multiples groups according to the adopted strategy Also, they are ranked according with the bibliographic research, their publication year and how they are aligned with the principles of Theory of inventive problem solving. This theory drives the emergence of inventive principles, which are can lead to solutions to problems, with innovation. In this article it was not possible to address all aspects of this theory, limiting itself to the contradiction matrix. Synthetically, current literature research and problem-solving theory are used to analyze fault mitigation techniques. The ranking off the mitigation techniques can support the researchers, developers, organizations (public, private and academic) and governments during the process of chosen of the mitigation technique according their necessities off radiation tolerance.

Advancements in the identification of passive RC networks for compact modeling of thermal effects in electronic devices and systems

AbstractWe deal with the problem of identifying the parameters of an equivalent lumped RC multiport network from time domain tabulated data of a corresponding distributed real eigenvalues problem, as obtained from either measurements or accurate simulation tools. A novel step response matrix identification procedure is proposed, based on the combination of an outer nonlinear least squares iteration for the relocation of time constants, and an inner convex programming cycle for the identification of the corresponding residue matrix terms, able to guarantee a priori the passivity property of the equivalent RC network. The structure of the algorithm and its principal functions connections are shown, and the mathematical features of the proposed formulation of the identification problem are accurately described and commented. Moreover, the possibility of getting direct synthesis of a Foster generalized concretely passive multiport, as a consequence of the optimal identification of a passive real eigenvalues model from data, is discussed. Since the technique is well suited (although not limited) to the reduced analysis of typical electro‐thermal problems, a set of significant case studies in this area is considered. In this way the algorithm present implementation is validated, also comparing it to previous well assessed methods, evidencing its large potential and value.

Physical Processes and Applications of the Monte Carlo Radiative Energy Deposition (MRED) Code

MRED is a Python-language scriptable computer application that simulates radiation transport. It is the computational engine for the on-line tool CRÈME-MC. MRED is based on c++ code from Geant4 with additional Fortran components to simulate electron transport and nuclear reactions with high precision. We provide a detailed description of the structure of MRED and the implementation of the simulation of physical processes used to simulate radiation effects in electronic devices and circuits. Extensive discussion and references are provided that illustrate the validation of models used to implement specific simulations of relevant physical processes. Several applications of MRED are summarized that demonstrate its ability to predict and describe basic physical phenomena associated with irradiation of electronic circuits and devices. These include effects from single particle radiation (including both direct ionization and indirect ionization effects), dose enhancement effects, and displacement damage effects. MRED simulations have also helped to identify new single event upset mechanisms not previously observed by experiment, but since confirmed, including upsets due to muons and energetic electrons.

Experimental setup for Single Event Effects at the São Paulo 8UD Pelletron Accelerator

In this work we present an experimental setup mounted in one of the beam lines at the São Paulo 8UD Pelletron Accelerator in order to study Single Event Effects in electronic devices. The basic idea is to use elastic scattering collisions to achieve a low-flux with a high-uniformity ion beam to irradiate several devices. 12C, 16O, 28Si, 35Cl and 63Cu beams were used to test the experimental setup. In this system it is possible to use efficiently LET values of 17MeV/mg/cm2 for an external beam arrangement and up to 32MeV/mg/cm2 for in-vacuum irradiation.

New Synthesis Approach for Low Temperature Bimetallic Nanoparticles: Size and Composition Controlled Sn–Cu Nanoparticles

A various size of Sn-Cu nanoparticles were synthesized by using a modified polyol process for low temperature electronic devices. Monodispersive Sn-Cu nanoparticles with diameters of 21 nm, 18 nm and 14 nm were synthesized. In addition, the eutectic composition shift was also observed in nano-sized particles as compared with bulk alloys. By controlling the size and eutectic composition, a significant melting temperature depression of 30.3 degrees C was achieved. These melting temperature depression approaches will reduce adverse thermal effects in electronic devices and provide the synthesis guidelines for bimetallic nanoparticles with a low melting temperature.

Editorial Conference Comments by the General Chairman

This paper tells about the comments given by the general chairman in the 2009 conference at Quebec City's Hilton and convection centre in the province of Quebec, canada. NSREC is recoginized as one of the premier international conference on radiation effects in electronic materials, devices and systems. Also the radiation effects in microelectronic devices and materials are discussed. Reliability effects in electronic device is also given in the conference.

Multi-Scale Simulation of Radiation Effects in Electronic Devices

As integrated circuits become smaller and more complex, it has become increasingly difficult to simulate their responses to radiation. The distance and time scales of relevance extend over orders of magnitude, requiring a multi-scale, hierarchical simulation approach. This paper demonstrates the use of multi-scale simulations to examine two radiation-related problems: enhanced low-dose-rate sensitivity (ELDRS) in bipolar transistors and single-event effects (SEE) in CMOS integrated circuits. Examples are included that demonstrate how information can be passed from simulation tools operating at one level of abstraction to those operating at higher levels, while maintaining accuracy and gaining insight.

Evolution of shallow donors with proton fluence in n-type silicon

Bipolar components that consist of p+n junctions have been irradiated by MeV protons at fluences ranging from 1011 to 1013 particles cm−2. Capacitance-voltage measurements have been used to investigate changes in the carrier concentration profiles. Shallow donors that can induce harmful effects in electronic devices have been studied as a function of fluence, flux, and annealing parameters.

Chronology of generation, variation, and disappearance of a second proton belt as determined by effects in electronic devices

The paper presents an analysis of SEU data obtained from memory devices on the CRRES (Combined Release and Radiation Effects Satellite) spacecraft. It provides a dynamic picture of the newly identified second peak of the trapped proton belt in the equatorial region between approximately 2.0-2.8 Earth radii. In previous work, it was stated that injection of solar flare protons from the major flare of March 1991 generated this secondary belt which appears to have survived at least up to the demise of CRRES (October 12, 1992). The results of the present study show that the radiation responsible for the observed effects existed intermittently in that region of space from the very beginning of the mission, that is July 27, 1990, during a period when there was no significant high energy flare activity (about 4.5 months), and then disappeared for three months until it reappeared again with the March 1991 flare.

Electron Beam Simulation of Pulsed Photon Effects in Electronic Devices at Very High Doses and Dose Rates

Large high-energy flash X-ray simulation facilities are expensive to build and operate. As a result, the radiation effects community has at it's disposal a limited number of X-ray sources with the capability of providing the very high levels of radiation (hundreds of k rad(Si)) required for R and D. Because of the inefficiency of bremsstrahlung production, an accelerator which provides only small doses in the X-ray mode could readily provide the very high total doses and associated dose rates via direct electron irradiation. A prerequisite for electron beam testing is a satisfactory demonstration of the fidelity of the simulation. This paper presents the experimental details and results of such an assessment. It was demonstrated in this work that electron beams do simulate the effects of high-energy bremsstrahlung X-rays when testing semiconductor devices for very high dose and dose rate effects. However, it was also found that the effects of charge deposition from the electron beam can dramatically perturb the nominal irradiation bias conditions. In electronic devices where radiation induced degradation is a function of applied potentials (e.g., MOS devices), this charge capture can totally invalidate the simulation unless the experimenter is aware of and compensates for the effect.

Dosimetry of Gamma-Irradiated Semiconductor Devices

Extensive use is made of $sup 60$Co gamma radiation for the investigation of radiation effects in semiconductor devices. A survey of the literature, however, reveals widespread inconsistencies and loose usage in the units of dosimetry. This note points out that rigorous definitions of the concepts ''absorbed dose'' and ''exposure,'' and their units, have been established by the International Commission on Radiation Units and Measurements (ICRU), and suggests greater consistency by workers in the field of radiation effects in electronic devices and materials. (auth)