This study investigates the effect of electron beam irradiation on the structural and optical properties of Poly (3,4-ethylenedioxythiophene) polystyrene sulphonate (PEDOT: PSS) semiconductor films. PEDOT: PSS was deposited on thin films using spin coating technique at varying speeds of 1000, 2000, 3000, and 4000 rpm. Based on the pre-characterisation analysis, the thin film fabricated at 4000 rpm is identified as optimal. The fabricated PEDOT: PSS thin films were irradiated at doses of 10, 20, 30, 40 and 50 kGy at an energy of 1 MeV. The films were characterised using Atomic Force Microscopy (AFM), Ultraviolet–visible Spectroscopy (UV-Vis), X-ray diffractometer and energy dispersive X-ray spectroscopy (EDX). The optical properties of PEDOT:PSS thin film show that the transmittance was decreased after exposure to electron beam radiation, indicating a degradation with increasing total ionising dose (TID). The bandgap of irradiated PEDOT: PSS thin film shows a decreasing trend from 3.36 eV (unirradiated) to 3.30 eV (50 kGy) after the thin film was exposed to electron beam radiation at a maximum dose of 50 kGy. On the aspect of surface morphology, the AFM results show that the surface roughness of the PEDOT: PSS decreased with increasing TID, resulting in a smoother surface from 1.84 to 1.28 nm. Based on the XRD result obtained, the crystalline phase of the PEDOT: PSS thin film was maintained while the grain size improved from 264.87 nm (unirradiated) to 377.45 nm after exposure to electron beam radiation mainly at 30 and 40 kGy, indicating an optimised threshold exposure within the range. The findings provide valuable insight for developing organic semiconductors with enhanced structural, morphological and optical band gap properties after electron beam radiation exposure.
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