Effect Of Annealing Process Research Articles

Effects of Annealing Process on the Interface of Alternate α/β Mg-Li Composite Sheets Prepared by Accumulative Roll Bonding

Effects of annealing temperature and annealing time on the microstructure, interfacial bonding properties and mechanical properties of alternate α/β Mg-Li alloy composite plates by accumulative roll bonding (ARB) were investigated. Due to the large reduction, a part of the relatively harder Mg-5Li-1Al alloy is embedded into the softer Mg-12Li-1Al alloy to achieve metallurgical bonding in the process of composite rolling. The optimum annealing temperature of the composite plate is 350°C or 400°C. At the same time, the formation mechanism of the interfacial diffusion region was discussed, and results show that there exist two diffusion regions, diffusion layer 1 and diffusion layer 2. The diffusion layer 1 is mainly composed of Li3Mg7 phase, and the diffusion layer 2 is composed of Li0.92Mg4.08 phase. The interfacial bonding ability of Mg-Li alloy composite plate first increases and then decreases with the increase of annealing temperature and annealing time. Compared with the composite plate processed by one pass ARB, the annealing time of the composite plate processed by six passes ARB increases due to the increase of cumulative strain, and the optimum annealing process is at 400°C for 30min.

Effects of Annealing Process on Interfacial Microstructure and Properties of Roll-casted Ti-Al Composite Plate

Ti-Al composite plate is prepared by cast rolling method, then annealing treatment of different processes is carried out on it. Mechanical properties and hardness of the composite plate under different annealing processes are tested by precision universal testing machine and micro hardness tester. Scanning electron microscope (SEM) is used to observe interface layer morphology, tensile fracture morphology. The results show that: after annealing at 450℃ for 3 h, good metallurgical bonding layer is formed by diffusion of Ti and Al. The thickness of the interface layer is about 2.5 μm. At this time the tensile strength is 103 MPa and elongation rate is 53%. When the two kinds of metal are stretched, cracking degree is the least and comprehensive performance is the best.

Effect of Annealing Process on the Performance of Pressure of the φ3.5mm×8.75mm Cylindrical Copper Cylinder

By using different annealing processes to anneal the pressure-measuring cylindrical copper cylinder, playing some static experiments on different copper cylinders, the difference of pressure measuring performance of copper cylinder was analyzed. Results show that, by using current annealing processes all can achieve the purpose of full softening the material of the copper cylinder and the deformation of copper is not significantly affected by the different temperatures. Some copper cylinders which use short holding time have poor linear sensitivity, but their measurement deviation is better than those which use longer holding time. So, in the actual production of copper, we should use shorter annealing time to improve their measuring accuracy.

Study on the Effect of Annealing Process on Microstructure and Electrochemical Behavior of the Binary Mn-Ni Nano-Oxide Pseudocapacitor Synthesized by Anodic Deposition

Study on the Effect of Annealing Process on Microstructure and Electrochemical Behavior of the Binary Mn-Ni Nano-Oxide Pseudocapacitor Synthesized by Anodic Deposition

Effect of Annealing Process on Natural Zeolites from Volcanic Ash for Environmental Applications: Structural and Morphological Characterizations

This work presents a study of morphological, structural, and compositional properties of volcanic ash obtained from Nevado del Ruiz volcano in Colombia. The volcanic ash samples were subjected to hydration and annealing processes at atmospheric pressure to obtain zeolite-type natural structures for different applications, like water decontamination and air pollution control. The strong influence of hydration and annealing processes on the formation of zeolite phases was observed. Rietveld refinement was performed with X-ray diffraction (XRD) patterns, obtaining the presence of natural zeolites: gismondine, hydrated calcium aluminosilicate, litosite, clinoplitolite-Na, and phillipsite-K. From scanning electron micrographs, a morphological change of the ash sample was observed with increasing annealing temperature (290 K < T < 673 K). The surface was dominated by the presence of agglomerates or granules around 5 µm in size; other regions with tubular form or flake-type structures were observed with less presence on the surface ash, associated with the formation of the labradorite phase.

Effects of Annealing Process on the Structural, Optical and Electrical Properties of Copper Oxide Thin Films Grown by Immersion Technique

The synthesized and characterization on the growth of copper oxide thin films on fluorine-doped tin oxide (FTO) coated glass with annealing and without annealing process has been studied by immersion techniques. Furthermore, ZnO layer has been used in order to improved the absorption spectrum of CuO films. The copper oxide films were analyzed on the morphological, structural, optical and electrical by field emission scanning electron microscopy (FESEM), X-ray diffractometer (XRD), UV-Vis spectroscopy (absorbance) and I-V characteristics instruments. The atomic force microscope (AFM) was used in order to characterize the surface imaging of copper oxide films and the thicknesses were measured using a surface profiler. The AFM studies revealed that the roughness of the CuO films increased after annealing was applied this is due to the formation of large clusters of grains from the merging of small clusters grains. The CuO films thicknesses also becomes two times higher than the CuO films without annealing process.

Effect of Annealing Process on the Properties of Ni(55%)Cr(40%)Si(5%) Thin-Film Resistors.

Resistors in integrated circuits (ICs) are implemented using diffused methods fabricated in the base and emitter regions of bipolar transistor or in source/drain regions of CMOS. Deposition of thin films on the wafer surface is another choice to fabricate the thin-film resistors in ICs’ applications. In this study, Ni(55%)Cr(40%)Si(5%) (abbreviated as NiCrSi) in wt % was used as the target and the sputtering method was used to deposit the thin-film resistors on Al2O3 substrates. NiCrSi thin-film resistors with different thicknesses of 30.8 nm~334.7 nm were obtained by controlling deposition time. After deposition, the thin-film resistors were annealed at 400 °C under different durations in N2 atmosphere using the rapid thermal annealing (RTA) process. The sheet resistance of NiCrSi thin-film resistors was measured using the four-point-probe method from 25 °C to 125 °C, then the temperature coefficient of resistance could be obtained. We aim to show that resistivity of NiCrSi thin-film resistors decreased with increasing deposition time (thickness) and the annealing process had apparent effect on the sheet resistance and temperature coefficient of resistance. We also aim to show that the annealed NiCrSi thin-film resistors had a low temperature coefficient of resistance (TCR) between 0 ppm/°C and +50 ppm/°C.

(Invited) Effects of Annealing Process on Morphology, Crystal Structure, and Photoelectrical Properties of CZTS Thin Films

In this study, Cu2ZnSnS4 (CZTS) thin films were directly formed on FTO glass substrates by a simple ethanol-thermal method, and the films were annealed at 823K under different atmosphere environments. Field emission scanning electron microscopy (FESEM), energy dispersive spectroscopy (EDS), X-ray powder diffraction (XRD), and photoelectrical measurements were used to investigate effects of annealing parameters in surface morphology, chemical compositions, and crystal structures of the thin films as well as photoelectrical properties, respectively. All the thin films were smooth and compact, but their color and micro-topography were different through different annealing atmosphere. The addition of sulfur during the annealing process is necessary to tailor sulfur concentration in the films and the crystallization of CZTS phase. Furthermore, the films exhibited p-type semiconductor characteristics, which is desirable for their applications in thin films solar cells.

(Invited) Effects of Annealing Process on Morphology, Crystal Structure, and Photoelectrical Properties of CZTS Thin Films

In this paper, Cu2ZnSnS4 (CZTS) thin films were directly formed on FTO glass substrates by a simple ethanol-thermal method, and the films were annealed at 550 oC under different atmospheric environments. Field emission scanning electron microscopy, energy dispersive spectroscopy, X-ray powder diffraction, and photoelectrical measurements were conducted to investigate effects of annealing parameters on surface morphology, chemical compositions, crystal structures, and photoelectrical properties of the thin films. All the thin films were smooth and compact, but their color and micro-topography were different through different annealing atmospheres. The addition of sulfur during the annealing process is necessary to tailor sulfur concentration in the films and the crystallization of CZTS phase.

Effect of Annealing Process on Porous Aluminium Filled with Graphite

Thermal properties of porous thin films formed by anodization of thin aluminum films in sulfuric acid. The obtained pores at the surface are filled by sprayed graphite which the role is to improving its optical and thermal absorption giving a structure of an assembly of three different media such as graphite/(Porous aluminium layer filled with graphite)/(Al sample). The realized structure is annealed in temperature range varying from the room temperature to 650∫C for various durations. Thermal properties of the realized structure was studied by Photothermal Deflection (PTD) Technique and correlated to the microstructure evolution. It was found that this structure is characterised by thermal conductivity which, conversely to thermal diffusivity, increases with the heating duration and temperature in the furnace and can be used in solar energy field.

Effect of Annealing Process on Trap Properties in High-k/Metal Gate n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors through Low-Frequency Noise and Random Telegraph Noise Characterization

In this research, trap properties in n-channel metal–oxide–semiconductor field-effect transistors (MOSFETs) with different annealing sequences have been studied on the basis of low-frequency (1/f) noise and random telegraph noise (RTN) analyses. The 1/f noise results indicate that the source of the drain current fluctuation is electron trapping. The higher trap density in the devices annealed before the TaN layer causes serious noise and lower trap energy in RTN results. The substitution mechanism explains that the increment of defects is due to the additional nitrogen atoms in HfO2. On the contrary, fewer defects in the devices annealed after the TaN layer are due to the effect of passivation in the TiN layer. The defect in HfO2 is the source of trapping/detrapping; thus, fewer defects cause the decrement of the fluctuation and the increment of the drain current. We believe that this process has a potential to remove defects in advanced MOSFETs.

Effect of Annealing Process on Properties of Pb(Zr0.52Ti0.48)O3 Thin Films Prepared by Sol-Gel Method

The effect of the annealing process on properties of Pb(Zr0.48Ti0.52)O3 (PZT) thin films prepared by sol-gel method was systematically studied. PZT film deposited by the single layer pre-crystallization processing followed by multilayer crystallization processing is easy to grow along (110) orientation. The PZT films were prepared by the single layer annealing process and show (100) preferred orientation at lower crystallization temperature, while (111) and (110) orientation growth is occurs easily in higher the crystallization temperature. The PZT films deposited at higher crystallization temperature have larger average grain, but the high temperature cause the volatilization of lead, film density to decrease.

Effect of Annealing Process on Strain-Induced Crystallographic Orientation of FePt Thin Films

Dependence of the crystallographic orientation on annealing process (post- and in-situ annealing) of in the 40-nm-thick single-layered FePt films fabricated by magnetron sputtering onto glass substrates have been investigated. The progress of L10 ordering for both series of samples is nearly the same, verified by X-ray diffraction. For the post-annealing films, there is a dramatic change of crystallographic orientation from (111) to (001) planes with an increase of temperature from 350 °C to 700 °C. On the contrary, the orientation evolves from a (111) texture to isotropic state for the in-situ annealing samples in the same temperature range. The different atomic mobility during annealing leads to a discrepancy in the residual stress behavior and microstructure, which further causes the disparity of crystallographic orientation.

Effect of Annealing Process on Mechanical Properties and Texture Changes of AZ31 Mg Alloy Sheets

Mg alloy sheets exhibit the yield strength of 280 MPa and elongation of 18 % by rolling at 423 K. Elongation of Mg alloy sheets was improved up to 35 % when the sample was annealed at 673 K for 10 min. From the observation of microstructure, recrystallization and grain growth have happened during annealing processes. The intensity of 0002 pole figure increases slightly as a function of annealing temperature.

Effect of Annealing Process on Microstructure and Properties of Roll-Casting AZ31B Mg Alloy Sheet

The effect of annealing temperature and time on the microstructure and mechanical properties of AZ31B Mg alloy sheets were investigated. The specimens were deformed by general roll-casting and combining energy-field roll-casting (electromagnetic field and ultrasonic). The microstructure analysis showed that the re-crystallization temperature of combining energy-field Mg sheet was lower than that of general Mg sheet. It has been found that at the annealing of 250°C, no obvious re-crystallization occurred for the general Mg strip sheet, while the local re-crystallization occurred for the Mg strip sheet with combining energy-field roll-casting. However, in the condition of annealing at 300°C, the specimens of roll-casting Mg strips fully re-crystallized with the holding time of 4h, and the specimens with compound energy-field Mg strip had fine grains and uniform microstructure, and the average grain diameter were 14∼19μm, 8∼13μm for the general Mg strip sheet and combining energy-field Mg strip sheet, respectively. When the specimens were annealed at 400°C, the grains became coarse within 1h, the average grains diameters were 20∼25μm and 28∼33μm respectively for the general Mg roll-casting sheet and combining energy-field Mg roll-casting sheet when annealing at 400°C for 1h. The results of EDS showed that the precipitates amount of annealed Mg roll-casting sheets were reduced by annealing, the precipitates of general Mg roll-casting sheet with thicker size were enriched on the grain boundaries. The results of the mechanical properties indicated that the plastic deformation of roll-casting Mg sheets was improved significantly; Under the annealing condition of 300°C × 4h, the values of HBS, σb, σ0.2 and δ of combining energy-field Mg strip were improved by 4.7%, 17.2%, 34.1%, 74.6%, compared to general Mg sheet.

Effect of Annealing Process on Residual Strain/Stress Behaviors in FePt Thin Films

We have characterized the dependence of residual strain/stress on annealing process (post- and in-situ annealing) in single-layer FePt films prepared by sputtering onto amorphous glass substrates. A remarkable difference of evolutions in residual strains between post-andin-situ annealed samples was observed by Sin <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ψ method using synchrotron radiation. The onset of ordering temperature for both series samples is almost identical (~ 350 °C), verified by x-ray diffraction. Crystalline domain size, measured by x-ray peak breadths, of FePt films indicates a difference between these two series samples, which is associated with evolution of residual strain. We believe that the dynamic stress relaxation is the major factor in discrepancy of the residual stress behavior, since the atomic mobility of adatoms during film deposition for in-situ annealing samples are much higher than that for post-annealed films. It is further deduced that residual strain mechanisms may influence the ordering behaviors and related microstructure of FePt films.

Effect of Annealing Process and Cold Reduction Ratio on Microstructure and Mechanical Property of 350MPa Grade Structural Hot Dip Galvanized Steel Sheets

Hot rolled 350MPa Grade structural hot dip galvanized steel sheets was used to study the effect of annealing process and cold reduction ratio on the microstructures and mechanical properties. The results showed that the experimental steel was recrystallize finished after cold rolling follow different cold reduction ratio and Salt-bath annealing (annealing temperature 750°C and soaking time 60s) under experimental condition. When the cold reduction ratio was increased, annealing temperature was above 720°C, the yield strength and tension strength had no significant change. The annealing temperature was 750°C,the elongation had no significant change . when the cold reduction ratio was increased,the plastic strain ratio value reduced, and the strain hardening exponent value was gradually increase. In the end, that suggested the optimal annealing temperature is 750°C,and cold reduction ratio is 55% to 65%, consequently that obtained good match of mechanical properties and punching property.