Field Effect Research Articles

Effects of soil moisture and an AC-electric field on the phytoremediation of the Cd-contaminated soil

ABSTRACT Phytoremediation enhanced by electric field has been considered a green and low-cost technology for remediating heavy metal-contaminated soils. Soil moisture is a main environmental factor that affects Cd availability in the soil. However, the effects of soil moisture and AC-electric field on the remediation efficiency of willow (Salix spp.) and S. Alfredii interplanted together remain unclear. In the present study, we designed four treatments (60% soil field capacity, 60% soil field capacity + 0.5 V·cm−1 AC, 100% soil field capacity, 100% soil field capacity + 0.5 V·cm−1 AC) to explore the impacts of soil moisture and AC-electric field on soil Cd availability and Cd accumulation in plants. The results showed that the application of an AC-electric field significantly increased soil Cd availability by 20.9% and 10.8% under both 60% and 100% soil field capacity, respectively. Both high water with and without AC-electric field treatments reduced the proportion of acid-extractable and reducible Cd of soil but increased the proportion of residual Cd. Compared with the control, an AC-electric field with 60% soil field capacity significantly enhanced the biomass of S. Alfredii shoots by 31.2% and increased Cd accumulation in willow leaves and S. Alfredii shoots by 14.6% and 32.3%, respectively. In addition, the biomass production of willow was significantly enhanced but the uptake of Cd by willow was dramatically decreased under an AC-electric field with high water treatment. Therefore, these results suggest that the AC-electric field combined with 60% soil field capacity may be a more promising remediation technique to clean up the Cd-contaminated soil.

An investigation of 60Co gamma radiation induced damage in N-channel MOSFETS at cryogenic temperature.

N-channel depletion metal oxide semiconductor field effect transistors (MOSFETs) were irradiated with 60Co gamma radiation in the dose range of 100 krad to 6Mrad at cryogenic (77K) and room temperatures (300K). The MOS devices irradiated at 77K and 300K were characterized at 77K and 300K respectively. The different electrical parameters of MOSFET such as threshold voltage (Vth), density of interface trapped charges (ΔNit), density of oxide trapped charges (ΔNot) and mobility of the charge carriers (μ) were studied as a function of total dose. A considerable increase in ΔNit and ΔNot and decrease in Vth was observed after irradiation. The 77K irradiation results were then compared with 300K irradiation results and found that the degradation in the electrical characteristics is more for the devices irradiated at 300K.

GeP3 monolayer as a promising 2D sensing materials in detecting SO2, H2S, SOF2 and SO2F2

The detection of SF6 decomposition components using gas-sensitive sensors is significantly important for characterizing internal insulation failures and assessing the operational status of SF6 gas-insulated equipment. In this paper, the adsorption properties of GeP3 monolayers for SO2, H2S, SOF2 and SO2F2 gases were investigated based on density functional theory. Four gas adsorption systems were constructed, and the adsorption mechanisms and sensing characteristics of GeP3 monolayers on target gases were investigated by calculating parameters such as adsorption energy, charge transfer, density of states, and recovery time, along with their potential application as resistive gas sensors and field-effect transistor sensors. It is demonstrated that GeP3 monolayers were suitable for the detection of SO2, H2S, SOF2 and SO2F2 gases, all of which exhibited good chemisorption with adsorption energies of −1.36 eV, −0.78 eV, −1.82 eV and −2.91 eV, respectively. The adsorption of SO2 and H2S is found to cause a significant change in the conductivity of the GeP3 monolayers, and desorption is achieved at the optimal operating temperature in only 54.428 s and 10.686 s, respectively. Also the adsorption of SOF2 and SO2F2 can make the work function of the GeP3 monolayers significantly larger. Consequently, the GeP3 monolayers have the potential to be used as a resistive gas sensor for SO2 and H2S gases, or as a field effect transistor sensor for SOF2 and SO2F2 gases. This study provides theoretical guidance for the development of GeP3-based sensors for monitoring the insulation status and operational conditions of SF6 gas-insulated equipment.

Displacement Damage, Total Ionizing Dose, and Transient Ionization Effects in Gate-All-Around Field Effect Transistors

Displacement Damage, Total Ionizing Dose, and Transient Ionization Effects in Gate-All-Around Field Effect Transistors

Exploring Mitochondrial Interactions with Pulsed Electromagnetic Fields: An Insightful Inquiry into Strategies for Addressing Neuroinflammation and Oxidative Stress in Diabetic Neuropathy

Pulsed electromagnetic fields (PEMFs) are recognized for their potential in regenerative medicine, offering a non-invasive avenue for tissue rejuvenation. While prior research has mainly focused on their effects on bone and dermo-epidermal tissues, the impact of PEMFs on nervous tissue, particularly in the context of neuropathy associated with the diabetic foot, remains relatively unexplored. Addressing this gap, our preliminary in vitro study investigates the effects of complex magnetic fields (CMFs) on glial-like cells derived from mesenchymal cell differentiation, serving as a model for neuropathy of the diabetic foot. Through assessments of cellular proliferation, hemocompatibility, mutagenicity, and mitochondrial membrane potential, we have established the safety profile of the system. Furthermore, the analysis of microRNAs (miRNAs) suggests that CMFs may exert beneficial effects on cell cycle regulation, as evidenced by the upregulation of the miRNAs within the 121, 127, and 142 families, which are known to be associated with mitochondrial function and cell cycle control. This exploration holds promise for potential applications in mitigating neuropathic complications in diabetic foot conditions.

Influence of the optoelectronic properties of F-MoTe2 systems under the combined action of an external electric field and biaxial tensile-compressive deformation: a first-principles study

Abstract The effects of an applied electric field on the electronic structure, charge transfer, and optical characteristics of molybdenum telluride (MoTe2) systems doped with halogen F atoms during biaxial tensile-compressive deformation were explored using first-principles approaches. The results show that the MoTe2 system exhibits an upward shift of the Fermi energy level and a downward shift of the conduction band when crossing the Fermi energy level due to the doping of halogen F atoms. Subsequently, we applied an electric field of -0.4 eV~-0.4 eV to the F-MoTe2 system. The change of the F-MoTe2 system under the electric field effect is very small. This result indicates that the F-MoTe2 system can be stabilized in this range. Subsequently, we chose to apply a biaxial tensile-compressive deformation of -14%-14% to the F-MoTe2 system under the action of an electric field of +0.4 eV. The F-MoTe2 system underwent a transition from a semiconductor to a metal, with an increase in the carrier concentration and a good shift in electrical conductivity. The compressive strain gives better results than the tensile strain. In terms of optical characteristics, the absorption and emission peaks of the F-MoTe2 system are blueshifted under the combined effect of electric field and stress.

Magnetic field and initial stress on a rotating photothermal semiconductor medium with ramp type heating and internal heat source

This manuscript addresses a significant research gap in the study by employing a mathematical model of photo thermoelastic wave propagation in a rotator semiconductor medium under the effect of a magnetic field and initial stress, as well as ramp-type heating. The considered model is formulated during the photothermal theory and in two-dimensional (2D) electronic-elastic deformation. The governing equations represent the interaction between the primary physical parameters throughout the process of photothermal transfer. Computational simulations are performed to determine the temperature, carrier density, displacement components, normal stress, and shear stress using the application of Lame’s potential and normal mode analysis. Numerical calculations are carried out and graphically displayed for an isotropic semiconductor like silicon (Si) material. Furthermore, comparisons are made with the previous results obtained by the others, as well as in the presence and absence of magnetic field, rotation, and initial stress. The obtained results illustrate that the rotation, initial stress, magnetic field, and ramp-type heating parameter all have significant effects. This investigation provides valuable insights into the synergistic dynamics among a magnetization constituent, semiconducture structures, and wave propagation, enabling advancements in nuclear reactors' construction, operation, electrical circuits, and solar cells.

Thermal Dehydrogenation Impact on Positive Bias Stability of Amorphous InSnZnO Thin-Film Transistors.

Recently, the growing demand for amorphous oxide semiconductor thin-film transistors (AOS TFTs) with high mobility and good stability to implement ultrahigh-resolution displays has made tracking the role of hydrogen in oxide semiconductor films increasingly important. Hydrogen is an essential element that contributes significantly to the field effect mobility and bias stability characteristics of AOS TFTs. However, because hydrogen is the lightest atom and has high reactivity to metal and oxide materials, elucidating its impact on AOS thin films has been challenging. Therefore, in this study, we propose controlling the hydrogen quantities in amorphous InSnZnO (a-ITZO) thin films through thermal dehydrogenation to precisely reveal the hydrogen influences on the electrical characteristics of a-ITZO TFTs. The as-deposited device containing 15.69 × 1015 atoms/cm2 of hydrogen exhibited a relatively low saturation mobility of 18.1 cm2/V·s and poor positive bias stress stability. However, depending on the extent of thermal dehydrogenation, not only did the hydrogen quantity and interface defect density (DIT) decrease but also the conductivity and surface energy increased due to the rise in oxygen vacancies and hydroxyl groups in a-ITZO thin films. As a result, the a-ITZO TFT with a hydrogen amount of 4.828 × 1015 atoms/cm2 showed that the saturation mobility improved up to 36.8 cm2/V·s, and positive bias stress stability was remarkably enhanced. Hence, we report the ability to manage the hydrogen quantity with thermal dehydrogenation and demonstrate that high-performance a-ITZO TFTs can be realized when an appropriate hydrogen concentration is achieved.

Photon-assisted electron depopulation of 4H-SiC/SiO2 interface states in n-channel 4H-SiC metal–oxide–semiconductor field effect transistors

4H-SiC/SiO2 interface states play a major role in the performance and reliability of modern 4H-SiC metal–oxide–semiconductor field effect transistors (MOSFETs). To gain new insights into these interface states, we developed a cryogenic measurement technique that uses photon-assisted electron depopulation to probe device performance limiting 4H-SiC/SiO2 interface states. This technique enables the characterization of shallow as well as deep states at the 4H-SiC/SiO2 interface of fully processed devices using a cryogenic probe station. Our method is performed on n-channel 4H-SiC MOSFET test structures with deposited oxide and postoxidation anneal. We identify conditions under which the electrons remain trapped at 4H-SiC/SiO2 interface states and trigger the controlled photon-assisted electron depopulation within a range of photon energies. This allows us to prove the presence of near interface traps, which have previously been found in thermally grown 4H-SiC MOS structures. Our results are supported by device simulations. Additionally, we study the impact of irradiation intensity and light exposure time on the photon-induced processes.

Comparison of Si and SiC MOSFETs responses to electrical stress and the observation of parameter recovery in SiC MOSFET by stress superposition

Abstract In this study we examined the effects of room temperature DC and AC electrical stress on Si and SiC n-channel metal-oxide-semiconductor field effect transistors (MOSFETs). Measurement of threshold voltage, transconductance, subthreshold swing, charge pumping, and gate oxide breakdown are used to compare the impact of stress on Si MOSFETs and SiC MOSFETS, as well as to understand the processes of carrier injection and trapping at oxide and interface defects. DC stress is observed to promote negative charge buildup in the gate oxide and interface in Si MOSFETs. However, in SiC MOSFETs the net charge buildup sign alternates between negative and positive as the DC stress polarity is changed from positive to negative, respectively. This change of charge buildup sign explains our observation that degradation in SiC MOSFETs subjected to AC bipolar stress is insignificantly small, whereas AC stressing of Si MOSFETs is observed to be much more severe. Also, the superposition of alternating DC stress polarity eliminates the stress induced degradation in SiC MOSFETs thus enabling a simple process for parameter reconfiguration and recovery.

Duffy Antigen Receptor for Chemokines (DARC) Nanodisc-Based Biosensor for Detection of Staphylococcal Bicomponent Pore-Forming Leukocidins.

Staphylococcus aureus (S. aureus) is an opportunistic infectious pathogen, which causes a high mortality rate during bloodstream infections. The early detection of virulent strains in patients' blood samples is of medical interest for rapid diagnosis. The main virulent factors identified in patient isolates include leukocidins that bind to specific membrane receptors and lyse immune cells and erythrocytes. Duffy antigen receptor for chemokines (DARC) on the surface of specific cells is a main target of leukocidins such as gamma-hemolysin AB (HlgAB) and leukocidin ED (LukED). Among them, HlgAB is a conserved and critical leukocidin that binds to DARC and forms pores on the cell membranes, leading to cell lysis. Current methods are based on ELISA or bacterial culture, which takes hours to days. For detecting HlgAB with faster response and higher sensitivity, we developed a biosensor that combines single-walled carbon nanotube field effect transistors (swCNT-FETs) with immobilized DARC receptors as biosensing elements. DARC was purified from a bacterial expression system and successfully reconstituted into nanodiscs that preserve binding capability for HlgAB. Dynamic light scattering (DLS) and scanning electron microscopy (SEM) showed an increase of the DARC-containing nanodisc size in the presence of HlgAB, indicating the formation of HlgAB prepore or pore complexes. We demonstrate that this sensor can specifically detect the leukocidins HlgA and HlgAB in a quantitative manner within the dynamic range of 1 fM to 100 pM with an LOD of 0.122 fM and an LOQ of 0.441 fM. The sensor was challenged with human serum spiked with HlgAB as simulated clinical samples. After dilution for decreasing nonspecific binding, it selectively detected the toxin with a similar detection range and apparent dissociation constant as in the buffer. This biosensor was demonstrated with remarkable sensitivity to detect HlgAB rapidly and has the potential as a tool for fundamental research and clinical applications, although this sensor cannot differentiate between HlgAB and LukED as both have the same receptor.

Measuring the Electric Fields of Ions Captured in Crown Ethers.

Controlling reactivity with electric fields is a persistent challenge in chemistry. One approach is to tether ions at well-defined locations near a reactive center. To quantify fields arising from ions, we report crown ethers that capture metal cations as field sources and a covalently bound vibrational Stark shift probe as a field sensor. We use experiments and computations in both the gas and liquid phases to quantify the vibrational frequencies of the probe and estimate the electric fields from the captured ions. Cations, in general, blue shift the probe frequency, with effective fields estimated to vary in the range of ∼0.2-3 V/nm in the liquid phase. Comparison of the gas and liquid phase data provides insight into the effects of mutual polarization of the molecule and solvent and screening of the ion's field. These findings reveal the roles of charge, local screening, and geometry in the design of tailored electric fields.

Charged and magnetized particle motion around a static black hole in the Starobinsky–Bel–Robinson gravity

In this work we focus on the effects of Starobinsky–Bel–Robinson (SBR) gravity parameter and external magnetic field on the motion of charged test particles and magnetic dipoles moving around a black hole in the selected gravity theory. We take the external magnetic field to be uniform and aligned along the axis of symmetry. Our results reveal that the effect of the SBR gravity parameter is very strong in the close environment of the central black hole while in the farther distances this effects diminishes very quickly. We see that the effect of the external magnetic field on the particle motion is always dominating over the SBR gravity parameter in farther distances. We show that for the motion of charged test particles the magnetic interaction can mimic the spin up to very rapid rotations for prograde motion of particles, while for the motion of magnetic dipoles magnetic interaction can mimic the spin completely for retrograde motion of such particles. We observe that in both scenarios, the SBR gravity parameter behaves as a weak mimicker of the spin of Kerr black hole. We apply the outcomes of our study to the scenario where a neutron star is assumed to behave as a magnetic dipole moving around the supermassive black hole Sgr A⋆\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$A^\\star $$\\end{document} to investigate how the magnetic field and the SBR gravity coupling parameter β\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\beta $$\\end{document} affect the orbits of neutron stars orbiting the supermassive black hole.

Design and characterization of a nano‐pulsed atmospheric pressure plasma jet for biomedical applications

AbstractPlasma jets, crucial atmospheric pressure sources in biomedical applications, generate reactive species in liquids, with electrical fields playing a significant role, as variations in pulse rise times and durations in dielectric barrier discharges yield diverse effects. This study presents a novel nanosecond pulse plasma jet. Here, investigations with phosphate‐buffered saline and Ringer's saline elucidate critical parameters influencing species generation, such as treatment time and gas flow rate. Results showed increasing concentrations of H2O2 and NO2− over time, with NO2− degrading faster in Ringer's saline due to acidification. The nanosecond pulse jet exhibits superior energy efficiency than conventional jets, laying the groundwork for optimizing species generation and studying electrical field effects in future biological works.

Electrochemical and Field Effect Transistor Dual‐Mode Biosensor Chip for Label‐Free Detection of Cytokine Storm Biomarker with High Sensitivity within a Wide Range

AbstractAccurate and rapid quantification of cytokines in biofluids is crucial for early disease diagnosis, management, and prevention. However, it still remains challenging for existing sensors due to the broad dynamic range of cytokines and high interference from sample matrices. To overcome these challenges, electrochemical (EC) and field‐effect transistor (FET) dual‐mode biosensing is integrated on an extended‐gate carbon nanotube field‐effect transistor. This biosensor chip effectively eliminates direct contact between the device and the solution and employs independent signal readouts based on two distinct response mechanisms, thereby circumventing the limitations associated with conventional transistor biosensors. Selective detection of cytokine (e.g., Interferon‐γ, IFN‐γ) is achieved by the FET sensing mode (0.1 to 4000 pg mL−1, with a limit of detection of 24.1 fg mL−1) and the EC sensing mode (0.4–2000 ng mL−1) at different concentration range. The feasibility of real sample analysis using the EC‐FET dual‐mode biosensor is confirmed by detecting salivary levels of IFN‐γ. The combination of EC and FET sensing modes not only provides high sensitivity and a wide response range (seven orders of magnitude) to accommodate various biological samples but also improves the reliability of detection results, which shows promising applications in biological analysis and early disease diagnosis.

Double emulsion generation in shear-thinning fluids under electric field effects

Double emulsions are encapsulated microstructures with medical, food, and cosmetics applications. Precise control over their parameters, such as volume, thickness, and size distribution, is crucial. This study numerically investigates, for the first time, the generation of double emulsions in a shear-thinning outer fluid under the influence of an external DC electric field. A dual co-flowing microfluidic device is chosen as the flow domain, and the shear-thinning behavior of the outer fluid is approximated by the Carreau–Yasuda rheological model. The governing equations are discretized on structured numerical grids using the VOF-CSF model and the finite volume method. The combined effects of the shear-thinning behavior and electric forces on compound droplet formation parameters, including volume, eccentricity, maximum thickness, and jet length, are studied carefully. Results show that for highly shear-thinning fluids, the application of electric forces can ensure the generation of desired compound droplets, which is not feasible without electric field effects. However, excessive electric forces can disrupt the droplet generation process, especially for moderate to low shear-thinning fluids. These findings provide new insights into the role of external electric fields in double emulsion generation and highlight their potential to optimize the production process.

Electric field temporal interference stimulation of neurons in vitro.

Electrical stimulation (ES) techniques, such as deep brain and transcranial electrical stimulation, have shown promise in alleviating the symptoms of depression and other neurological disorders in vivo. A new noninvasive ES method called temporal interference stimulation (TIS), possesses great potential as it can be used to steer the stimulation and possibly selectively modulate different brain regions. To study TIS in a controlled environment, we successfully established an in vitro 'TIS on a chip' setup using rat cortical neurons on microelectrode arrays (MEAs) in combination with a current stimulator. We validated the developed TIS system and demonstrated the spatial steerability of the stimulation by direct electric field measurements in the chip setup. We stimulated cultures of rat cortical neurons at 28 days in vitro (DIV) by two-channel stimulation delivering 1) TIS at 653 Hz and 643 Hz, resulting in a 10 Hz frequency envelope, 2) low-frequency stimulation (LFS) at 10 Hz and 3) high-frequency stimulation (HFS) at 653 Hz. Unstimulated cultures were used as control/sham. We observed the differences in the electric field strengths during TIS, HFS, and LFS. Moreover, HFS and LFS had the smallest effects on neuronal activity. Instead, TIS elicited neuronal electrophysiological responses, especially 24 hours after stimulation. Our 'TIS on a chip' approach eludicates the applicability of TIS as a method to modulate neuronal electrophysiological activity. The TIS on a chip approach provides spatially steerable stimuli while mitigating the effects of high stimulus fields near the stimulation electrodes. Thus, the approach opens new avenues for stimulation on a chip applications, allowing the study of neuronal responses to gain insights into the potential clinical applications of TIS in treating various brain disorders.

Enhancing the efficacy of synthesising PHA from nitrogen-limited activated sludge using magnetic field

ABSTRACT Polyhydroxyalkanes (PHA) is a biodegradable biopolyester. In this study, we introduced the biological effects of magnetic field into a sequencing batch reactor (SBR) for PHA production to evaluate the effect of different strength of magnetic field on the efficacy of PHA synthesis by activated sludge and used the magnetic field to enhance the PHA synthesis capacity of nitrogen-limited activated sludge and to optimise the percentage of the content of the two monomers in PHA. The results showed that the magnetic field of appropriate strength was favourable to increase the production of PHA and to increase the percentage of PHV. In addition, microbial community analysis showed that there was an obvious succession of key functional bacteria under different strength of magnetic field. The highest PHA accumulation was achieved after the magnetic field of 16 mT, which reached 57.65% of the dry weight of sludge. In addition, the PHV monomers were more sensitive to the response of the magnetic field, and the magnetic field of 8mT and 16mT positively promoted the synthesis of PHV. It is worth noting that too high a magnetic field would have an inhibitory effect on the synthesis of PHA.

The effect of nonuniform magnetic field on the liquid film motor: Controllable vortex in two-dimensional fluids

The effect of nonuniform magnetic field on the liquid film motor: Controllable vortex in two-dimensional fluids

Photo-switching operation of MoS2 field effect transistor by photoisomerization of azobenzene in solution delivered on a microfluidic platform

Combining the photoisomerization of molecules with an electrical device is important for developing optoelectronic devices. Field effect transistors (FETs) with atomically thin channels are suitable for this purpose because the FET properties respond to chemical changes in molecules. Since the photoisomerization wavelength of the switching molecules can be tuned, complex logic operations can be realized if a specific molecule is delivered to the target FET of an integrated circuit. However, conventional techniques for transferring molecules, such as drop casting and sublimation, cannot efficiently realize this goal. In this study, we fabricated a MoS2 FET device combined with a microfluidic platform, wherein the MoS2 channel was in contact with the flow of an azobenzene solution in isopropyl alcohol as the solvent. UV radiation (365 nm) and thermal relaxation realize the cycle of trans- and cis-azobenzene states and the switching of the substantial FET properties. This study demonstrated the feasibility of using the solution for optical switching of the MoS2-FET, which can realize quick phase changes in the molecule and the delivery of the molecule to the target FET by a microfluidic platform.