Effect Of Substrate Temperature Research Articles

Effect of substrate temperature on the performance of Sb2Se3 thin film solar cells fabricated by chemical-molecular beam deposition method

Antimony triselenide (Sb2Se3) stands as a promising candidate for photovoltaic (PV) applications due to its favorable material- and optoelectronic properties. However, the realization of further advancements in device efficiency is hindered by the substantial deficit in open-circuit voltage (VOC) attributed to the presence of multiple defect states and detrimental recombination losses.In this work, solar cells based on Sb2Se3 absorber layers deposited by chemical-molecular beam deposition method at substrate temperatures of 400 °C, 450 °C, and 500 °C. Due to the precise control of the Sb/Se ratio, Sb2Se3 thin films with stoichiometric composition were obtained, which was confirmed by energy-dispersive X-ray spectroscopy. The effect of substrate temperature on the morphology and electrical properties of Sb2Se3 thin-films were characterized by scanning electron microscopy and hot probe method. The PV performance of Mo/Sb2Se3/ZnCdS/CdS/ZnO/ITO/Au devices were investigated by current-voltage characteristics, and external quantum efficiency. The conductivity values tend to increase from 1.2 × 10–6 to 4.6 × 10–4 (Ω cm)-1 as the substrate temperature increased. Whereas, the trap-state density was determined between 7.3 × 1013 – 1.7 × 1014 cm-3 in the absorber layer by the space charge limited current method. Ultimatety, it has been shown that defect densities in Sb2Se3 films can be suppressed to some extent by optimizing the substrate temperature. Best solar cell performance of 5.36%, resulting from VOC of 476 mV, short-circuit current densit of 22.97 mA/cm−2, and fill factor of 49% at the substrate temperature of 450 °C.

Effect of substrate temperature on the physical and sensing properties of nanostructured Fe2O3 thin films

Using Chemical Bath Deposition (CBD) Method and various substrate temperatures, Fe2O3 films were successfully deposited. The produced film thickness was around (320 nm). Using X-ray diffraction, researchers may examine the polycrystalline structure of Fe2O3 thin films. These nanofilms contain strong peaks at 2θ =32.21, suggesting a preferred orientation along the (110) plane, and the grain size increases with substrate temperature, according to XRD tests. When the base temperature was raised from 350 to 450 o C, the strain parameter decreased from 31.35 to 28.43. AFM testing of the surface morphology of the deposition of material yields excellent homogenous coatings. The findings show that the average particle size of the nanoparticles ranges from (69.8 to 32.7) nm. SEM images show Fe2O3 films at (350, 400, 450) °C. Increased temperature reduces grain size, influencing morphology variations. The absorbance increases with substrate temperatures and decreases rapidly at short wavelengths, which correspond to the energy gap. The transmittance increases with increasing wavelength range. It decreases with rising substrate temperatures. The band gap values vary from 2.17 eV to 2.06 eV by increasing the substrate temperatures from 350 to 450 o C. It was discovered that the band gap reduces as the temperature of the Fe2O3 substrate increases. In addition, the optical constants for all films, including the absorption coefficient, the refractive index, and the extinction coefficient, were computed. Fe2O3 film's resistance over time at 350, 400, and 450°C for 300 ppm NO2 demonstrates oxidation effect and temperature sensitivity. Sensitivity decreases with higher base temperature due to charge carrier recombination, affecting NO2 response.

Conventional epitaxy of NiO thin films on muscovite mica and c-Al2O3 substrates

Fiber-textured and epitaxial NiO thin films were deposited on Si(100), c-Al2O3, and muscovite mica(001) substrates using reactive magnetron sputtering at substrate temperatures of 300°C and 400°C, to investigate the effect of film thickness and substrate temperature on epitaxial growth of NiO films. The as-deposited films exhibited a face-centered cubic structure with a larger lattice constant, attributed to strain induced during the sputtering process. With an increase in substrate temperature to 400°C, the d-spacing decreased due to strain release, approaching the NiO bulk value for the thickest film. The NiO film grown on Si(100) displayed fiber texture. On c-plane sapphire, NiO thin films exhibited twin domains and three-fold symmetry, consistent with expected crystallographic orientation relationship for NaCl-structured materials on sapphire:(111)NiO∥(0001)Al2O3and[01¯1]NiO∥[1¯010]Al2O3, [011¯]NiO∥[101¯0]Al2O3. On muscovite mica(001) substrates, the observed epitaxial shows that the mechanism is conventional epitaxy, rather than van der Waals epitaxy, consistent with the epitaxial growth of the non-layered non-van-der-Waals compound NiO. The epitaxial relationship was identified as of (111)NiO∥(001)Mica and [01¯1]NiO∥[010]Mica, [011¯]NiO∥[01¯0]Mica.

Influence of substrate temperature and Mn/Y co-doping concentration on the morphological, structural and optical properties of CuO nanostructured film deposited by the spray pyrolysis method

In this work, the effect of substrate temperature (ST) during deposition and dopant amount of Mn (1,3,5, and 7 %) and Y(3 %), (Mn/Y), on the physical properties of copper oxide (CuO) the nanostructured film were analyzed using different diagnostic tools. The pure and (Mn, Y) co-doped CuO thin films were deposited by the spray pyrolysis method, which is effective and easy to apply for any substrate. Deposited pure and (Mn,Y) co-doped CuO nanostructured films were investigated by X-ray diffraction (XRD), UV–Vis spectroscopy, and Field emission scanning electron microscopy (FESEM) techniques to analyze the influence of ST and co-doping on the structural, morphological, and optical properties of prepared films. The FESEM is used to visualize nanostructures on the surface of the film. Also, it is observed that the surface morphology of CuO film changes from a spherical-like to a nanocloumnar-like structure with increasing substrate temperature. The XRD diffractograms confirm the monoclinic crystal structure of CuO, in polycrystalline nature for all deposited films. UV–Vis spectra suggest changing the optical absorbance and the band gap of the pure and Mn/Y co-doped CuO nanostructured films. In the first investigation of this study, the better substrate temperature was obtained as 400 °C according to results. In the second part, the effect of Y and Mn doping with different content was analyzed for the CuO film deposited at the chosen ST of 400 °C. There is no observable crystalline structure variation in the XRD pattern, but the size of nanostructure and dislocation density are varied with Mn/Y co-doping. FESEM micrographs confirm the impact of the co-doping concentration on the size, shape, and surface properties of CuO nanostructured film. In addition, the optical band gap increases with Mn doping up to 3 % of Mn content and it was determined as 2.69 eV for the sample 3Mn/Y@CuO nanostructured film. The obtained results suggest that the substrate temperature has an important impact on the physical properties of the spray deposited CuO nanostructured film, and the structural, optical, and surface properties of the CuO nanostructured films may be engineered by Mn/Y doping concentration.

Influence of substrate temperature on plasma-enhanced chemical vapor deposition to improve the surface flashover performance of epoxy resin

Abstract Epoxy resin composites are widely used as insulating and supporting materials in high-voltage power systems due to their excellent mechanical and electrical properties. However, long-term operation under high-voltage direct current (HVDC) induces surface flashover. Plasma enhanced chemical vapor deposition (PECVD) has been shown to effectively improve the surface insulation properties of epoxy resin. However, the influence of substrate temperature on the film composition, stress, morphology, and surface flashover performance remains unclear. This study uses PECVD to treat epoxy resin, enhancing its surface flashover performance. Tetraethoxysilane (TEOS) is used as the precursor to deposit nano-scale SiOx films on the epoxy resin surface. The effects of different substrate temperatures on the surface flashover voltage, physicochemical properties, and mechanical properties of epoxy resin are characterized. The results show that the surface flashover voltage increases and then saturates with increasing substrate temperature, improving by 27.4% at 60°C compared to untreated samples. The surface roughness of epoxy resin decreases after plasma deposition, while highly oxidized silicon-containing functional groups are introduced. When the substrate temperature increases from 20°C to 60°C, the interfacial bonding strength improves by 25.9%. This study provides a simple, efficient, and controllable method to enhance the surface flashover performance of epoxy resin, promoting the application of this technology in engineering practice.

The Impact of Substrate Temperature on the Adhesion Strength of Electroplated Copper on an Al-Doped ZnO/Si System.

This research, which involved a comprehensive methodology, including depositing electroplated copper on a copper seed layer and Al-doped ZnO (AZO) thin films on textured silicon substrates using DC magnetron sputtering with varying substrate heating, has yielded significant findings. The study thoroughly investigated the effects of substrate temperature (Ts) on copper adhesion strength and morphology using the peel force test and electron microscopy. The peel force test was conducted at angles of 90°, 135°, and 180°. The average adhesion strength was about 0.2 N/mm for the samples without substrate heating. For the samples with substrate heating at 100 °C, the average peeling force of the electroplated copper film was about 1 N/mm. The average peeling force increased to 1.5 N/mm as the substrate heating temperature increased to 200 °C. The surface roughness increases as the annealing temperature of the Cu/AZO/Si sample increases. These findings not only provide a reliable and robust method for applying AZO transparent conductive films onto silicon solar cells but also underscore its potential to significantly enhance the efficiency and durability of solar cells significantly, thereby instilling confidence in the field of solar cell technology.

Effect of substrate temperature on In2S3 thin films using nebulizer spray pyrolysis method for photodetector applications

In this work, Indium Sulfide (In2S3) thin films were prepared using an economical nebulizer spray pyrolysis technique by various substrate temperatures from 250 °C to 375 °C in steps of 25 °C to evaluate their photo sensing properties. X-ray diffraction (XRD) patterns confirm the presence of In2S3 with face centered cubic structure for all substrate temperatures. The densely packed small spherical grain-sized particles were observed for In2S3 films deposited at 350 °C using Field emission scanning electron microscope (FESEM) analysis. The optical bandgap values were decreased from 3.16 eV to 2.28 eV, with increment in coating temperatures from 250 °C to 350 °C. The high intensity Photoluminescence (PL) peak is observed at 480 nm for the film coated at 350 °C is due to higher rate of electron–hole pair recombination. The photo sensing analysis revealed that the In2S3 thin films deposited at 350 °C, has the maximum responsivity (R) of 9.09 × 10−2 A W−1, detectivity (D*) of 8.25 × 1010 Jones, and external quantum efficiency (EQE) of 21.2%. Increasing the substrate temperature results in a significant enhancement of photo sensing characteristics.

Influence of physicochemical factors on the specific activity of proteases used in cheesemaking biotechnology

The formation of a clot under the influence of proteolytic enzymes is an essential stage in cheesemaking technology. Depending on their composition, milk-clotting enzyme preparations have a different effect on the quality characteristics of the clot, whey separation, and yield of the finished product. At present, the Russian market offers a wide range of domestic and imported milk-clotting enzyme preparations. In this connection, the choice of a milk coagulant by cheese makers should be carried out in accordance with the cheese group produced by the enterprise. The milk-clotting activity of enzyme preparations depends not only on the active acidity of the mixture, but also on the temperature of the solution used to obtain them. It is the solution temperature that has a determining effect on the duration of the coagulation process and, therefore, the quality of the formed clot. Research into the specific activity of milk-clotting enzyme preparations, obtained in a working solution with different active acidity (pH from 4.0 to 8.0), showed their milk-clotting activity to decrease significantly upon pH shifting to the alkaline region. Application of solutions with a pH of 4.0 led to an increase in the milk-clotting activity of bovine pepsin, VNIIMS SG-50 rennet-bovine preparation, and rennet enzyme by 94, 72, and 36%, respectively, relative to the control. Bovine pepsin demonstrated the highest sensitivity to fluctuations in active acidity. A study into the effect of substrate temperature in the range from 30 to 40 °C established rennet to be the most sensitive preparation to temperature changes. It is concluded that a properly selected enzyme composition is an effective means for affecting the quality of cheese products.

Effect of substrate temperature on the growth mechanism of FeSe superconducting films

Abstract Among all the iron-based superconductors (IBSs), Fe-chalcogenides (Fe-Ch) possess the advan tages of simple structure, non-toxicity, low anisotropy and the potential for high-field applications.One of the most effective methods for preparing Fe-Ch films is pulsed laser deposition (PLD). However, high quality film growth is challenged by the significant volatility difference between the iron
and chalcogens (S, Se, Te), which affects stoichiometric transfer from target to substrate and subsequently impacts superconductivity. Currently, there is limited research on the correlation between the growth mechanism and preparation conditions of Fe-Ch films, particularly in explaining chalcogen volatility during deposition. Technically, PLD offers various adjustable parameters, among
which the substrate temperature (Ts) is the most critical one affecting film quality. It governs particle behavior on the substrate including adsorption, diffusion, bonding reactions, crystallization processes while also strongly affecting volatilization rates. In this study, we fabricated a series of FeSe films using PLD at different Ts ranging from 25 ℃ to 750 ℃.We reveal in detail the impact of
competitive processes between Se volatilization and reactive crystallization of Fe/Se on film quality. The optimal film was obtained at Ts=500 ℃ with a composition ratio of Fe1.01Se. We also investigate the correlations between Ts and film crystallinity, surface morphology, along with their influence on superconductivity. Additionally, the pinning mechanism in FeSe film grown at the
optimal Ts was briefly analyzed. Our results provide reliable experimental evidence regarding the growth mechanism of FeSe films while revealing comprehensive insights into how Ts affects both film quality and performance.

Anomalous Temperature Effect on the Deposition Morphology in Reactive Inkjet Printing

Reactive inkjet (RIJ) printing represents an important approach for printed electronics. Different from the traditional inkjet printing of colloidal inks with nanosized metal particles, RIJ prints the solution of metal organic compound, that is, metal‐organic decomposition (MOD) ink, and reduces it to the pure metal during the post‐treatment to form conductive electrodes. Successful RIJ printing of MOD inks has been demonstrated; however, the fundamental understanding of droplet deposition involved in RIJ printing is lacking. Herein, the effect of substrate temperature and nozzle temperature during inkjet printing of copper MOD ink on the deposition morphology is investigated. It exhibits distinct behaviors in the deposition morphology at elevated temperatures when compared with the ones at room temperature. The different deposition morphology of the copper ink at various temperatures is attributed to the generation of a localized seeding layer which attracts the copper ions to deposit. In addition, the copper MOD ink printing is compared with a silver MOD ink. The different deposition morphology between the copper ink and silver ink is due to the solvent system. Understanding the deposition mechanism for reactive inks provides valuable information and guidance in the fabrication of printed functional devices using particle‐free reactive inks.

Effects of substrate temperature and bias voltage on mechanical and tribological properties of cosputtered (TiZrHfTa)Nx films

This study investigated the effects of substrate temperature and bias voltage on the mechanical and tribological properties of cosputtered (TiZrHfTa)Nx films. A substrate temperature ranging from room temperature to 400 °C, and a bias voltage ranging from 0 to −150 V were selected as the sputtering variables. A mixture gas with a nitrogen flow ratio (fN2 = N2/[N2 + Ar]) of 0.2 was used to fabricate nitride films. Nanoindentation and wear tests were conducted to assess the performance of the fabricated (TiZrHfTa)Nx films, which formed a single face-centered cubic structure. Increasing the substrate temperature resulted in grain growth, lattice shrinkage, and nonsignificant improvements in mechanical properties. Applying a bias voltage of −150 V to the substrate increased the hardness of the fabricated film to a peak of 32.7 GPa compared with that of 29.3 GPa for the film prepared in an electronically grounded state. The (Ti0.24Zr0.22Hf0.19Ta0.35)N0.66 film prepared at a bias voltage of 0 V and substrate temperature of 400 °C exhibited the optimal combination of mechanical and tribological properties (hardness, 30.0 GPa; elastic modulus, 325 GPa; and wear rate, 1.16 × 10−5 mm3/Nm).

A flexible resistive strain gauge with reduced temperature effect via thermal expansion anisotropic composite substrate

Strain gauge plays vital roles in various fields as structural health monitoring, aerospace engineering, and civil infrastructure. However, traditional flexible strain gauge inevitably brings the pseudo-signal caused by the substrate temperature effect and determines its accuracy. Here, we present an anisotropic composite substrate designed to modify the thermal expansion performance via Micro-electro-mechanical System (MEMS) technology, which facilitates the development of strain gauges that are minimally affected by substrate temperature-induced effect. Compared to the isotropic flexible substrate, the simulated expansion displacement in the thermal insensitive direction is reduced by 53.6% via introducing an anisotropic thermal expansion structure. The developed strain gauge exhibits significantly reduced sensitivity to temperature-induced effect, with a temperature coefficient of resistance decreasing from 87.3% to 10%, along with a notable 47.1% improvement in TCR stability. In addition, the strain gauge displays a sensitivity of 1.99 and boasts a wide strain operational range of 0–6000 µε, while maintaining excellent linearity. Furthermore, stress response conducted on a model of an aircraft wing illustrates the rapid monitoring of the strain gauge, which can detect strain as low as 100 µε. This study strongly highlights the potential applicability of the developed strain gauge in the aircraft, ships, and bridges for monitoring stress.

Growth Conditions and Interfacial Misfit Array in SnTe (111) Films Grown on InP (111)A Substrates by Molecular Beam Epitaxy.

Tin telluride (SnTe) is an IV-VI semiconductor with a topological crystalline insulator band structure, high thermoelectric performance, and in-plane ferroelectricity. Despite its many applications, there has been little work focused on understanding the growth mechanisms of SnTe thin films. In this manuscript, we investigate the molecular beam epitaxy synthesis of SnTe (111) thin films on InP (111)A substrates. We explore the effect of substrate temperature, Te/Sn flux ratio, and growth rate on the film quality. Using a substrate temperature of 340 °C, a Te/Sn flux ratio of 3, and a growth rate of 0.48 Å/s, fully coalesced and single crystalline SnTe (111) epitaxial layers with X-ray rocking curve full-width-at-half-maxima of 0.09° and root-mean-square surface roughness as low as 0.2 nm have been obtained. Despite the 7.5% lattice mismatch between the SnTe (111) film and the InP (111)A substrate, reciprocal space mapping indicates that the 15 nm SnTe layer is fully relaxed. We show that a periodic interfacial misfit (IMF) dislocation array forms at the SnTe/InP heterointerface, where each IMF dislocation is separated by 14 InP lattice sites/13 SnTe lattice sites, providing rapid strain relaxation and yielding the high quality SnTe layer. This is the first report of an IMF array forming in a rock-salt on zinc-blende material system and at an IV-VI on III-V heterointerface, and highlights the potential for SnTe as a buffer layer for epitaxial telluride film growth. This work represents an important milestone in enabling the heterointegration between IV-VI and III-V semiconductors to create multifunctional devices.

INITIATED CHEMICAL VAPOR DEPOSITION (iCVD) OF POLY(ACRYLIC ACID): A COMPARISON BETWEEN CONTINUOUS AND CLOSED-BATCH iCVD APPROACHES

In this study, poly(acrylic acid) (PAA) thin films were deposited on silicon wafer and glass surfaces by initiated chemical vapor deposition (iCVD) method using di-tert-butyl peroxide (TBPO) as the initiator and acrylic acid (AA) as the monomer. During iCVD, two different precursor feeding approaches, namely continuous and closed-batch, were employed. The effects of substrate temperature and the precursor feeding approaches on the deposition rates and surface morphology of the films were investigated. The highest deposition rates for the continuous and closed-batch iCVD approaches were found as 26.1 nm/min and 18.6 nm/min, respectively, at a substrate temperature of 15 °C. FTIR analysis of the films deposited by both approaches indicated high structural retention of the monomer during the polymerization. AFM results indicated that, PAA thin films possessed low RMS roughness values of 2.76 nm and 1.84 nm using continuous and closed-batch iCVD, respectively. Due to the slightly higher surface roughness of the film deposited under continuous iCVD, that film exhibited a lower water contact angle of 16.1° than the film deposited in closed-batch iCVD. In terms of monomer utilization ratio, closed-batch system was found to be more effective, which may help to minimize the carbon footprint of iCVD process.

Dispersion of particles in a sessile droplet evaporating on a heated substrate

A coupled volume-of-fluid (VOF) and discrete element model (DEM) is developed and used to study the dispersion of particles in an evaporating pinned sessile droplet on a heated substrate. Fully resolved simulations of evaporating droplets are performed to study the effects of substrate temperature and the Marangoni stresses to study the fluid flow and temperature distribution within the droplet. The fluid flow inside the evaporating droplets is used to predict the behavior of particles, studying the effect of relative particle density and the aforementioned effects on the particle dispersion within the droplet. This study shows that the presence of Marangoni stresses significantly affects the flow and temperature distribution inside the droplet, which, in turn, influences the dispersion of particles in the droplet. The fluid velocity induced by the Marangoni stresses is nearly two orders of magnitude larger than the velocity generated by capillary flow as a result of evaporation, promoting a strong convective mixing within the droplet, while working to equilibrate the temperature distribution at the interface. In the absence of Marangoni stresses, the dispersion of particles is governed by the competing effects of adsorption by the downward-moving interface as a result of evaporation, and particle sedimentation under the influence of gravity. However, both these effects become less dominant in the presence of a flow induced by the Marangoni stresses, causing the particles to initially move toward the apex of the droplet along the interface and, subsequently, toward a stagnation point on the interface.

Substrate Moisture and Temperature Effects on Limestone Reaction Rate in a Peat-Based Substrate

ABSTRACT Lime reaction rate in a container substrate is influenced by temperature and moisture, which are factors that vary between batches of substrate during manufacturing, storage, and crop production. The effects of temperature and moisture on the duration required to achieve a stable substrate-pH are useful information for substrate companies and growers, as well as a key component when modeling lime reaction over time. The pH of a 70 peat : 30 perlite (by volume) substrate was quantified over time under a range of different storage temperature (1.9 to 33.3°C) and substrate volumetric water content (VWC, 0.168 to 0.568 L of H2O/L of substrate). The lime source was a horticultural dolomitic carbonate limestone screened to the fraction that passed through a 100 US mesh but was retained on a 200 US mesh (0.075–0.15 mm) incorporated at 2.67 g·L−1 of substrate. Experiments provided two data sets for calibration and validation. Lime reaction rate increased with increasing substrate temperature and substrate moisture level. The duration required to reach a target substrate-pH value of 6.0 was used to indicate 90% of maximum pH effect from lime. Duration varied from 4 days with the combined high temperature (20.6 and 33.3 °C) and high VWC (0.468 and 0.568 L H2O/L of substrate) to 53 days with low temperature (1.9 °C) and low VWC (0.168 L H2O/L of substrate) for the calibration data set. At an example low VWC of 0.168 L of H2O/L of substrate, the duration required to reach substrate-pH 6.0 at 1.9, 7.8, 10, 20.6, and 33.3°C was 53, 38, 34, 23, and 17 days, respectively. Similarly, if the temperature was held constant at 33.3°C, reducing VWC from 0.568 L H2O/L to 0.128 L H2O/L would decrease lime reaction rate from 100% to 21%, requiring five times the duration to reach an equilibrium pH. Results can be used to compare the relative effects of moisture and temperature on lime reaction rate for substrate manufacturers and growers.

Effect of substrate temperature and position on properties of Cu3N thin films deposited by reactive radio frequency magnetron sputtering

Copper nitride (Cu3N) thin films were deposited on soda lime glass (SLG) substrates by reactive radio frequency (RF) magnetron sputtering using a pure Cu target in the presence of argon and nitrogen. The structural, optical, and electrical properties of the Cu3N films were investigated systematically on substrate temperature and position, demonstrating that both parameters strongly influence the properties of Cu3N thin films. XRD patterns revealed the formation of the Cu3N phase at all substrate temperatures and positions. The transmittance of the Cu3N thin films was over 80 % in the transparent region and the band gap for Cu3N was determined to 1.7–1.9 eV with a very high absorption coefficient above 104 cm−1. The n-type conductivity was observed in every Cu3N film but the resistivity varied considerably with both substrate temperature and position. The promising physical properties of Cu3N thin films suggest their potential application in optoelectronic devices such as thin film solar cells.

Effect of substrate temperature on the structural properties of Tungsten Carbide and Tungsten-rich Tungsten Carbide films

ABSTRACT The unique mechanical properties of Tungsten Carbide (WC), such as fracture toughness, exceptional hardness, high melting temperature, outstanding thermal stability, anti-oxidation qualities fatigue and creep resistance, have made it a suitable industrial material for different applications. It is also considered to be a promising material for coating on plasma-facing walls in a Tokamak reactor. The aim of the present work is to study the effect of varying substrate temperature, concentration of tungsten (W) and annealing in the structural properties of WC films. The WC films are deposited on a silicon substrate at different substrate temperatures viz. RT (300 K), 400, 500, 600 and 700 K using DC magnetron sputtering. W-rich WC films were deposited keeping the power of WC constant (100 Watt) and varying W powers (10 Watt, 20 Watt, 30 Watt, 40 Watt) at room temperature. Later, these W-rich WC films were annealed at 800°C in a reducing atmosphere. Glancing incidence X-ray diffraction (GIXRD) and Raman spectroscopy of the films are performed for structural analysis. GIXRD of the WC films reveals that as-deposited RT films are amorphous. However, films which are either deposited at elevated substrate temperature or are annealed are crystalline. This is confirmed by Raman’s measurements. It also indicates the presence of disorder and nanocrystalline phases due to temperature variations.

Aerosol Deposition of CuFeO2 Photocathode Coatings for Hydrogen Production

AbstractPhotoelectrochemical (PEC) water splitting is a viable route for green hydrogen generation. In PEC cells, the electrodes are coated with suitable semiconductor materials, which absorb the sunlight, generating charge carriers that are used to split water molecules into H2 and O2. CuFeO2 is one promising photocathode material for water splitting. However, its performance is limited by electron/hole pairs recombination within the film and at the film/substrate interface. Aerosol deposition (AD) can be employed to minimize charge recombination by spraying dense, thin films and by establishing a good back-contact interface. In this study, CuFeO2 powders were synthesized through a conventional solid-state technique and sprayed by AD under varied parameter sets. The effect of particle size distributions, carrier gas, gas pressure and substrate temperature was investigated. The best spraying parameter set was then tuned to obtain thin coatings (< 1 µm). Single-particle deformation and coatings microstructure were investigated by scanning electron microscopy. Optical properties of CuFeO2 films were analyzed by UV–Vis spectroscopy, while photoelectrochemical performances were estimated through amperometry tests under simulated sunlight. The results of this research show that CuFeO2 photocathodes can be successfully manufactured by AD. Their performance can be optimized by adjusting coating thickness and by annealing in air.

Investigation on structural and morphological properties of molybdenum trioxide (MoO3) thin films

Abstract The present study reports on the effect of substrate temperature on structural, morphological and optical properties of MoO3 thin films. MoO3 thin films were deposited on pre-heated glass substrate using spray pyrolysis technique. The substrate temperature was varied from 300 °C to 400°C with a step interval of 50 °C. Structural studies were studied using X-ray diffraction technique. It is observed that all the diffraction peaks exactly match with JCPDS card No. 05-0508. The as –deposited MoO3 thin films exhibits orthorhombic crystal structure. It is found that the crystalline nature increases with the increases of substrate temperature. FESEM micrographs show that the grains are distributed uniformly over the surface without any void. An optical property reveals that the transmission of MoO3 thin film in the visible region increases with increases of deposition temperature.