Effect Of Sb Doping Research Articles

Effects of Sb-doping on the formation of superconducting phases in Bi-Pb-Sr-Ca-Cu oxides

Abstract The effects of doped Sbon the formation of superconducting phases in [Bi0.8(Pb1-xSbx)0.2]2Sr2 Ca2Cu2.8Oy are investigated for x in the range of 0 to 0.5. Electrical resistivity measurements, powder X-ray diffraction and differential thermal analyses are performed. The coexistence of Pb and Sb is likely to cause a partially-melted state at a relatively low temperature of ≈840°C. The superconducting phase with 110 K transition temperature may rapidly grow in the partially-melted state. For x=0.2, samples showing zero resistivity at temperatures above 100 K can be obtained by sintering at 860°C for a period much shorter than that required for sintering samples without Sb.

Effect of Sb doping on the electronic transport in a-Ge and a-Si

Conductivity σ and thermopower S data have been obtained for a series of sputtered a-Ge and a-Si films doped with various amounts of Sb. For high doping levels, we have found a large difference in the values of the pre-exponent of σ between a-Ge and a-Si. Experimental results have been analysed in terms of the model of two current paths, one in the extended states and the other in the localized states. In strongly doped films, the latter makes a dominant contribution to the current flow near and below room temperature.