Effect Of Sb Content Research Articles

Effect of Sb Content on the Microstructure and Mechanical Properties of Eutectic SnPb Solder.

SnPb solder was widely used in electronic packaging for aerospace devices due to its high reliability. However, its creep resistance is poor and can be improved by adding alloying elements. The effects of Sb content on the microstructure, tensile, and creep properties of eutectic SnPb solder were investigated. Sb addition effectively improved the mechanical properties of the SnPb solder. When Sb content exceeds 1.7 wt.%, SbSn intermetallic compounds (IMCs) occurred. And increasing the Sb content increased the tensile strength. Furthermore, Sb addition decreased the steady-state creep rate and increased the stress exponent n, suggesting that the creep resistance had been enhanced, which may be attributed to the hindrance of dislocation movement by SbSn IMCs, as well as the reduction in phase boundaries, which consequently reduced grain boundary sliding.

Effect of Sb content on the phase structure and interface structure of Sn1.0Ag0.5Cu lead-free solder

Based on the alloy Sn1.0Ag0.5Cu, Sb powder is added at a certain mass percentage to form the solder alloy Sn1.0Ag0.5CuxSb (x = 0 wt%, 0.5 wt%, 1.5 wt%). The melting point of the solder was determined by differential scanning calorimetry, the alloy interface morphology was observed by scanning electron microscopy, and energy-dispersive X-ray spectroscopy was performed to analyze phase compositions. Thermo-Calc software was used to calculate the variation in phase content, the solidification curve, Gibbs energy, the driving force, liquid/solid phase lines, the phase diagram, and the nucleation radius of Sn1.0Ag0.5CuxSb(wt%). In addition, the calculation results were used to explain the interface growth mechanism. According to the results, the precipitation/transition temperature of each phase and the content of the newly formed phase SnSb gradually increased with the increase in Sb content. After the addition of Sb, both temperatures of the liquid-phase line and the solid-phase line slightly increased, and the calculated values showed the same trend as the measured values. Two heat absorption peaks were observed during the melting process. The Gibbs energy and nucleation radius of the Cu6Sn5 phase increased with the increase in Sb content, indicating that Sb can inhibit the growth of the Cu6Sn5 phase. The addition of Sb rendered the Sn-rich phase denser and finer and reduced the thickness of the intermetallic compound layer and the generation of cracks; these changes intensified with increasing aging time. Comprehensive analysis revealed optimal reliability of the solder for an Sb content of 0.5 wt%.

Study of Ag[sbnd]Sb coatings prepared by non-cyanide electrodeposition

In order to improve the wear resistance and corrosion resistance of silver coating under electrical contact friction environment, AgSb coatings have been prepared via a non-cyanide electrodeposition process. The surface morphology, microstructure, microhardness, wear resistance, corrosion resistance and electrical resistivity of AgSb coatings have been studied and the effect of Sb content has been discussed. The non-cyanide electrodeposited AgSb coatings have a flatter and more compact surface morphology by comparison with the non-cyanide electrodeposited Ag coating due to the addition of KSbOC4H4O6 as Ag-plating brightener. The Ag2Sb coating prepared from the bath containing 3 g·L−1 KSbOC4H4O6 obtains the highest microhardness of 146.5 HV and best wear resistance. The electrochemical testing results show a corrosion current density of AgSb coatings range from 1.14 × 10−5 A·cm−2 to 4.20 × 10−7 A·cm−2 whereas the Ag2Sb coating achieves the best corrosion resistance.

Ultrasonic-assisted bonding of Al2O3 ceramic, Cu, and 5056 aluminum alloy with Sn-Zn-Sb solders

Ceramic-metal composite components manufactured by brazing/soldering technology have broad application in industry due to their excellent properties. The present study investigated soldering of Al2O3 ceramic with Al2O3 ceramic, copper, and 5056 aluminum alloy respectively by using a new type Sn-Zn-Sb solder at 250 °C in air with the assistance of ultrasonic. Microstructure of the Sn-9Zn-xSb solders with various content of Sb was analyzed. And the effect of Sb content on ceramic/ceramic joint strength was studied. The microstructures of solder/substrate interfaces and the bonding mechanism were emphatically studied. A significantly new intermetallic phase, Zn4Sb3 is detected in the microstructure of solder while the content of Zn4Sb3 and β-Sn phases increased with the content of Sb element. During the soldering process, Sn-Zn-Sb solder was composed of liquid Sn-Zn alloy and solid ZnSb intermetallic phase, and the quasi-melting state of the solder was found to be the decisive factor in achieving reliable ceramic/solder bonds. There was no reaction layer at ceramic/solder interface, and the solder filled grooves on the ceramic surface to form a firm mechanical bonding, thus results in higher strength. Fractures occurred on the ceramic/solder interface and Zn4Sb3 particles were found embedded in ceramic side.

Effect of Sb content on anisotropic magnetoresistance in a (Ga, Mn)(As, Sb) ferromagnetic semiconductor thin film.

The effect of Sb content on the in-plane anisotropic magnetoresistance (AMR) of the quaternary ferromagnetic semiconductor (Ga, Mn)(As, Sb) was investigated. The results showed that the strain increased with Sb content, but the hole density was found to fluctuate. Dominant cubic and uniaxial symmetries were observed for the current along the [110] crystalline direction. The dependence of the symmetry on the Sb content was demonstrated for the longitudinal AMR, which mainly results from the alteration of the local stain relaxation and the hole density. A phenomenological analysis showed that the variation of the AMR coefficients is a good explanation for the observed experimental results.

SPUTTER-GROWN Sb-DOPED SILICON NANOCRYSTALS EMBEDDED IN SILICON-RICH CARBIDE FOR Si HETEROJUNCTION SOLAR CELLS

Sb-doped silicon nanocrystals (Si–NCs) films were fabricated by magnetron co-sputtering combined with rapid-thermal annealing. The effects of Sb content on the structural and electrical properties of the films were studied. The dot size increased with the increasing Sb content, and could be correlated to the effect of Sb-induced crystallization. The variation in the concentration of Sb shows a significant impact on the film properties, where as doped with 0.8[Formula: see text]at.% of Sb exhibited major property improvements when compared with other films. By employing Sb-doped Si–NCs films as emitter layers, Si–NCs/monocrystalline silicon heterojunction solar cells were fabricated and the effect of the Sb doping concentration on the photovoltaic properties was studied. It is found that the doping level in the Si–NCs layer is a key factor in determining the short-circuit current density and power conversion efficiency (PCE). With an optimized doping concentration of 0.8[Formula: see text]at.% of Sb, a maximal PCE of 7.10% was obtained. This study indicates that the Sb-doped Si–NCs can be good candidates for all-silicon tandem solar cells.

Spectroscopic ellipsometry characterization of Ge30-xSbx Se70 films using combinations of multiple dispersion functions

Variable angle spectroscopic ellipsometry (VASE) was employed to study the optical properties of Ge30-xSbx Se70 (x=0, 5, 10, 15 and 25) films in the UV–vis-NIR (near infrared) spectral region for photon energies from 0.7 to 5eV. The spectrum of imaginary parts of dielectric for all films is characterized by several peaks. Two groups of linear combination of oscillators were employed for the analysis of these spectra. First combination consists from one Tauc–Lorentz oscillator with more than one Gaussian oscillators (TL+G). Second one Cody–Lorentz oscillator with more than one Gaussian (CL+G) oscillators. Both groups of models behave very similarly and accurately fit to the experimental data. However the Second group models is more accurate in describing dielectric function in the absorption onset region. The effect of Sb content on models’ parameters (Lorentz oscillator amplitude, resonance energy, oscillator width, optical band gap, and Urbach energy) is discussed.

Composition induced rhombohedral–tetragonal phase boundary and high piezoelectric activity in (K0.48,Na0.52) (Nb(1-x)Sbx)O3 - 0.05Ca0.2(Bi0.5,Na0.5) 0.8ZrO3 lead-free piezoelectric ceramics

New lead-free piezoelectric ceramics (K0.48,Na0.52) (Nb(1-x)Sbx)O3 −0.05Ca0.2(Bi0.5,Na0.5) 0.8ZrO3 (KNNSx-CBNZ) were fabricated by traditional solid-state sintering process. The effects of Sb content on phase structures and electrical properties of the KNNSx-CBNZ ceramics were studied. Because Sb5+ can increase the rhombohedral-orthorhombic phase transition temperature and decrease orthorhombic-tetragonal phase transition temperature simultaneously, it is found that the ceramics in the composition range of 0.02<x<0.04 possess a rhombohedral-tetragonal phase boundary. The best piezoelectric properties are obtained in the ceramics with x=0.03: d33=470 pC/N, kp=52.4%, εr=1563, tan δ=3.30% and Tc=243°C. The results show that KNNSx-CBNZ ceramics have potential applications for substituting the lead based piezoelectric ceramics.

Effect of Sb content on the thermoelectric properties of annealed CoSb3 thin films deposited via RF co-sputtering

A series of CoSb3 thin films with Sb contents in the range 70–79at.% were deposited at room temperature via RF co-sputtering. The thin films were amorphous in the as-deposited state and annealed at 300°C for 3h to obtain crystalline samples. The annealed thin films were characterized using scanning electron microscopy and X-ray diffraction (XRD), and these data indicate that the films exhibited good crystallinity. The XRD patterns indicate single-phase CoSb3 thin films in the Sb-rich samples. For the Sb-deficient samples, however, mixed-phase thin films consisting of CoSb2 and CoSb3 components were obtained. The electrical and thermoelectric properties were measured at temperatures up to 760K and found to be highly sensitive to the phases that were present. We observed a change in the thermoelectric properties of the films from p-type at low temperatures to n-type at high temperatures, which indicates potential applications as n-type thermoelectric thin films. A large Seebeck coefficient and power factor was obtained for the single-phase CoSb3 thin films. The CoSb2 phase thin films were also found to possess a significant Seebeck coefficient, which coupled with the much smaller electrical resistivity, provided a larger power factor than the single-phase CoSb3 thin films. We report maximum power factor of 7.92mW/mK2 for the CoSb2-containing mixed phase thin film and 1.26mW/mK2 for the stoichiometric CoSb3 thin film.

Influence of Sb content on electromagnetic properties of ATO/ferrite composites synthesized by co-precipitation method

Composite microwave absorbers based on ATO (antimony-doped tin oxide) and W-type ferrite were prepared by a co-precipitation method, and the effects of Sb content on electromagnetic properties and reflection loss characteristics were studied in 2–18GHz. The prepared composite particles were characterized with X-ray diffraction (XRD) and field emission scanning electron microscope (FESEM). The results showed that the nano-particles ATO were coated with the surface of hexagonal flake ferrite, and with the increase of Sb content, the grain size of ATO nano-particles decreases resulting in agglomeration. The complex permittivity and permeability of the ferrite/ATO composites were analyzed by a vector network analyzer (Agilent E5071C), and the reflection loss was simulated by software YRComputer. The dielectric loss mainly comes from ATO, with the increase of Sb content, the real and imaginary parts of permittivity of the composites increase first, then decrease; The interface effects and surface effects lead to the increase of imaginary part μ″ of the absorbing materials in the macro; When the mole ratio of Sb/Sn is 2:10, the reflection loss reaches the maximum value −43.07dB at 10.64GHz for a layer 2.8mm, and the bandwidth over an absorptivity of 90% (−10dB reflection loss) is 8.32GHz (ranging from 7.12GHz to 15.44GHz).

Effects of Sb Content on Solidification Pathways and Grain Size of AZ91 Magnesium Alloy

The phase constitution and solidification pathways of AZ91 + xSb (x = 0, 0.1, 0.5, 1, in wt%) alloys were investigated through ways of microstructure observation, thermal analysis technique, and thermodynamic calculation. It was found that the non-equilibrium solidification microstructure of AZ91 + xSb (x = 0.1, 0.5, 1) is composed of α-Mg matrix, β-Mg17Al12 phase, and intermetallic compound Mg3Sb2. The grain size of the alloys with different Sb contents was quantitatively determined by electron backscattered diffraction technique which shows no grain refinement in Sb-containing AZ91 alloy. Thermodynamic calculations are in reasonable agreement with thermal analysis results, showing that the Mg3Sb2 phase forms after α-Mg nucleation, thus impossible acts as heterogeneous nucleus for α-Mg dendrite. Besides, the solid fraction at dendrite coherency point (f DCPs ) determined from thermal analysis decreases slightly with increasing Sb content, which is consistent with the fact that Sb does not refine the grain size of AZ91 alloy.

Effect of Sb content on the phase composition of CoSb x nanofilms grown on a heated substrate

We have studied the phase composition and crystal structure of CoSb x (1.82 ≤ x ≤ 4.16) nanofilms (30 nm) grown by molecular beam epitaxy on oxidized single-crystal silicon substrates at a temperature of 200°C, followed by heat treatment in vacuum at temperatures from 300 to 700°C. The as-grown films were found to be polycrystalline, with no preferential orientation. The effect of Sb content on the phase composition of the films was consistent with equilibrium phase diagram data for bulk Co-Sb materials. Vacuum annealing at temperatures above 450–500°C led to Sb sublimation not only from the crystalline phase but also from the antimonides, thereby increasing the percentages of the CoSb and CoSb2 phases and reducing the amount of CoSb3. The 30-nm-thick CoSb x (1.8 ≤ x ≤ 4.16) films were thermally stable at temperatures of up to 350°C.

Effect of Sb content on properties of Sn—Bi solders

The effect of Sb content on the properties of Sn-Bi solders was studied. The nonequilibrium melting behaviors of a series of Sn-Bi-Sb solders were examined by differential scanning calorimetry (DSC). The spreading test was carried out to characterize the wettability of Sn-Bi-Sb solders on Cu substrate. The mechanical properties of the solders/Cu joints were evaluated. The results show that the ternary alloy solders contain eutectic structure resulting from quasi-peritetic reaction. With the increase of Sb content, the amount of the eutectic structure increases. At a heating rate of 5 °C/min, Sn-Bi-Sb alloys exhibit a higher melting point and a wider melting range. A small amount of Sb has an impact on the wettability of Sn-Bi solders. The reaction layers form during spreading process. Sb is detected in the reaction layer while Bi is not detected. The total thickness of reaction layer between solder and Cu increases with the increase of the Sb content. The shear strength of the Sn-Bi-Sb solders increases as the Sb content increases.

Effects of Sb content on structure and laser reflection performance of ATO nanomaterials

Antimony tin oxide (ATO) nano-particles doped with different Sb contents were prepared by co-precipitation method, using SnCl4·5H2O and SbCl3 as main raw materials. Microstructure, morphology and reflectivity curves were characterized by XRD, FESEM, UV-visible spectroscopy and laser, and the effects of Sb content on crystalline microstructure, crystal size and reflectivity curves of the ATO nano-particles were investigated systematically. The results show that the ATO nano-particles prepared by co-precipitation method have tetragonal rutile structure, with particle size distribution range of several decade nanometer. With the increase of Sb content, the grain size of ATO decreases, and the unit cell volume increases. Compared with the SnO2 particles without Sb, the 1.06 μm laser reflection of ATO nano-particles doped with Sb is obviously lower. With the increase of Sb content, the reflection increases first, then decreases; when the Sb content is 20 %, 1.06 μm laser reflection of ATO nano-particles is below 0.02%, and the laser reflection performance is the best.

Direct-current electrodeposition and characterization of Ni5Sb2 nanowires array

The fabrication of monocrystalline Ni5Sb2 nanowires array into porous anodic alumina membranes by using direct-current potentiostatic electrodeposition technique has been firstly reported. In this paper, the focus is on the effects of Sb content and the co-deposition voltage on the resultant. It was found that Ni5Sb2 nanowires array with a monoclinic structure could be successfully synthesized by regulating these two parameters. The analysis results displayed that the Ni5Sb2 nanowires array was highly filled and ordered, as well as around 80nm in diameter. Structure analysis indicated that the as-deposited nanowires had a highly preferential orientation grown along [022] direction.

Effects of Sb content on microstructure and mechanical properties of Mg-6Zn-Y-Zr- xSb alloy

Effects of Sb content on microstructure and mechanical properties of Mg-6Zn-Y-Zr- xSb alloy were investigated by OM, SEM, XRD and mechanical property test. The results indicate that addition of Sb can break continuous network structure into particles in the interdendritic spaces, and with increasing Sb content, the volume fraction of these particles increases. The as-cast microstructure of the alloy with low content of Sb consists of α-Mg, Zn-rich phase, eutectic structure (α-Mg+ I-phase) and YSb. With increasing Sb content, Mg 3Sb 2 and Mg 4Zn 7 phases appear, while I-phase disappears finally. The ultimate tensile strength and elongation increase first with the increase of Sb content, while the mechanical properties reduce at excessive Sb content.

The Effect of Sb Content on Spark Plasma Sintered High-Density Antimony-Doped Tin Oxide Ceramics

Spark plasma sintering (SPS) is a newly developed technique that enables poorly sinterable tin oxide powder to be fully densified. Sintering without sintering aids is of great importance when SnO2ceramics are used as electrodes in the glass melting industry and aluminum electrometallurgy. Dense and good-conductive Antimony-doped SnO2 ceramics can be achieved by SPS at a lower sintering temperature and in a shorter time. When the Sb2O3concentration is 1.0 mol%, the densities of the samples reach their maximum value, which is 98.2% of the theoretical value. When the content of Sb2O3was 2.44mol%, SnO2ceramics with densities 97.6% can be obtained at 800°C-1000°C, and the resistivity was about 5.19×10-2Ω.cm at the sintering temperature of 1000°C. Defined amount of Sb3+used in our research are beneficial to low the sintering temperature and promote the densification of SnO2ceramics

The effect of Sb content on glass-forming ability, the thermal stability, and crystallization of Ge–Se chalcogenide glass

The glass formation and devitrification of intermediate alloys in the Sb-Ge-Se system were studied by differential scanning calorimetry. A comparison of various simple quantitative methods to assess the level of stability of the glassy materials in the bove mentioned system is presented. All of these methods are based on characteristic temperatures, such as the glass transition temperature, Tg, the onset temperature of crystallization, Tin, the temperature corresponding to the maximum crys- tallization rate, Tp, or the melting temperature, Tm. In this case, kgl may be more suitable for estimating the glass thermal stability in above composition range than XT. In this work the parameter Kr(T) is added to the stability criteria. The thermal stability of some ternary compounds of the Sb-Ge-Se type has been evaluated experimentally and correlated with the activation energies of crystalliza- tion by this kinetic criterion and compared with those evaluated by other criteria. All the results of criteria and kinetic parameter Kr(T) confirm that the thermal stability decrease with increasing Sb content in the glassy system. The crystallization results are analyzed and both the acti- vation energy of crystallization process and the crystalli- zation mechanism are characterized. Finally, identification of the crystalline phases was made by recording the X-ray diffraction pattern of the transformed material. This pattern shows the existence of microcrystallites of two phases, the first is germanium Selenide GeSe2 and the second is Sb2Se3 in amorphous matrix for annealed of Sb2.5Ge22.5Se75 and Sb10Ge15Se75 glass.

Properties of (Na 0.53K 0.4Li 0.07)Nb 1− x% Sb x% O 3 ceramics with high lithium and antimony content

(Na 0.53K 0.4Li 0.07)Nb 1− x% Sb x% O 3 (NKLNS x) piezoelectric ceramics with high content of lithium and antimony have been prepared by the solid-state reaction technique. The effect of Sb content on the crystallographic structure, phase transitions, piezoelectric and ferroelectric properties of NKLNS x ceramics is studied. The X-ray diffraction results suggest that the structure of the ceramics changes from pure tetragonal phase to the coexistence of orthorhombic and tetragonal phases with the increasing x, and that a little amount of second phase, LiSbO 3, is formed. The increase of Sb content induces a decrease of the Curie temperature T C and an increase of the orthorhombic–tetragonal phase transition temperature T O-T. The two compositions, NKLNS8.8 and NKLNS9.1, with T O-T closest to room temperature, possess optimum properties, with d 33 ∼ 290 pC/N, ɛ r ∼ 1340, and P r ∼ 24.2 μC/cm 2. These properties are superior to those of previously reported (K, Na, Li)(Nb, Sb)O 3 systems with low content of lithium and antimony. The thermal stability investigations show that the change of k p is minor for the ceramics that do not undergo a phase transition in the examined temperature range.

Reversible photodarkening in amorphous Ga20S75Sb5 and Ga20S40Sb40 thin films

Amorphous Ga20S75Sb5 and Ga20S40Sb40 thin films were prepared by thermal evaporation onto clean glass substrates. Transmittance and reflectance measurements were carried out at 300 K, in the wavelength range 400–800 nm, for the virgin and UV illuminated films. Reversible photodarkening is reported for the first time in those films. The photo-induced shift in the non-direct optical energy gap is determined and discussed in the light of current models of photodarkening. The effect of Sb content on the optical band gap and the shift of the absorption edge is also discussed in terms of the coordination number.