Effect Of Perpendicular Electric Field Research Articles

Josephson current in silicene-based SBS Josephson junction: Effect of perpendicular electric field

The Josephson effect in silicene-based superconductor/barrier/superconductor (SBS) junction is theoretically investigated by the Dirac-Bogoliubov-de Gennes equation, where superconductors are the proximity effect through superconducting gates and a thick barrier is the presence of a perpendicular electric field and an electrostatic gate. The influence of electric field is used for inducing a bandgap in monolayer silicene. We find that the Josephson current is controlled by the effect of electric field EZ. The behavior of critical current IC on the perpendicular electric fields is linear dependence at case of VG = 0. The gate control of electric field is led to the linear slope d(IC/I0)/dlEZ as revealed to 1/EF and –1/EF in the different direction of electric fields. In addition, the linear dependence of the Josephson current is considered by the electrostatic gate VG. The appearance of linear effect in the tunable barrier is near the bottom of conduction band and the top of valence band. These results are suitable for controlling the Josephson current in silicene-based junction.

The effect of perpendicular electric field on temperature-induced plasmon excitations for intrinsic silicene

We use the tight-binding model and the random-phase approximation to investigate the intrinsic plasmon in silicene.

Electrohydrodynamic Kelvin–Helmholtz instability with heat and mass transfer: Effect of perpendicular electric field

In this paper, we investigate the effect of perpendicular electric field on the linear analysis of Kelvin–Helmholtz instability of a plane interface between two viscous and dielectric fluids, when the fluids are subjected to constant normal electric field and, when there is heat and mass transfer across the interface. We use viscous correction for the viscous potential flow theory in which the discontinuities in the irrotational tangential velocity and shear stress are eliminated in the global energy balance by taking viscous contributions to the irrotational pressure. A quadratic dispersion relation that accounts for the growth of disturbance waves is obtained and stability criterion is given in terms of a critical value of relative velocity as well as applied electric field. It is observed that heat transfer and perpendicular electric field both have destabilizing effect while vapor fraction stabilizes the interface.

Tunable Bandgap in Bilayer Armchair Graphene Nanoribbons: Concurrent Influence of Electric Field and Uniaxial Strain

In this paper, the effect of uniaxial strain on the electronic properties of bilayer armchair graphene nanoribbons (BLAGNRs) is theoretically investigated for the first time. Our calculations based on density functional theory (DFT) reveal the tunable nature of the electronic properties of BLAGNRs with the application of uniaxial strain. We further explore the simultaneous effect of perpendicular electric field and uniaxial strain on the electronic bandgap. The results show that as long as the strain induced bandgap is smaller than a critical value of 0.2 eV, the electric field can significantly modulate the bandgap. In addition, we modified nearest neighbor tight-binding (TB) parameters to include the effect of the hydrogen passivation, which results in an excellent agreement between the electronic bandstructures obtained from DFT and TB calculations. Finally, by employing the nonequilibrium Green's function formalism, an on-off conductance ratio as high as 105 is predicted for strained BLAGNRs.

Influence of an electric field on the optical properties of few-layer graphene withABstacking

The effect of perpendicular electric field F on optical properties of the AB-stacked few-layer graphene, made up of two, three, or four graphite sheets, is explored through the gradient approximation. In contrast to the featureless optical spectra of graphene, the low-energy absorption spectra of few-layer graphene with AB stacking exhibit many jumping structures, which result from the band-edge states caused by the stacking effect, in the absence of an electric field. Remarkably, F causes the subband anticrossing, changes the subband spacing, produces the oscillating bands, and increases the band-edge states. It, therefore, follows that the field-modulating spectra with sharp peaks are generated. Moreover, the frequency of peak, which is strongly dependent on the layer number and the field strength, is predicted. Above all, the predicted absorption spectra and the associated electronic properties could be verified by the optical measurements.

Direct observation for the reduction of exciton binding energy induced by perpendicular electric field

We experimentally study the effect of perpendicular electric field on the exciton binding energy using a specially designed step quantum well. From photoluminescence spectra at the temperature of 77 K, we have directly observed remarkable blueshift of the exciton peak due to the transition from spatially direct to spatially indirect excitons induced by electric field.