The effects of oxygen addition during single-crystal diamond growth by microwave plasma CVD method on crystal surface morphology and charge carrier transport properties were evaluated. Diamond single-crystals were homoepitaxially grown on (001) surface of high-pressure and high-temperature (HPHT) synthesized type IIa single-crystal diamond substrates with a fixed methane concentration of 1 % and oxygen concentrations of 0–0.8 %. Inverted pyramid-shaped pits were generated as the oxygen concentration increased. The free exciton recombination emission intensity in the cathodoluminescence spectrum reached a maximum at oxygen concentration of 0.5 %. The samples with oxygen concentrations of 0.5 % and 0.8 % showed excellent charge collection efficiency and energy resolution. On the other hand, the mobility-lifetime (μτ) product was only (7.1 ± 1.7) × 10−5 cm2/V, which is approximately 1/4 of that of the sample with 0.2 % methane and no oxygen addition.
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