Ion implantation in various III–V compound semiconductors (BP, InSb, GaP, and GaAs) has been investigated to reveal the effect of implantation temperature on the general implantation behaviors of III–V compounds. Lattice location of implanted ions and defects were measured by means of He ion-channeling techniques as a function of implantation temperature. For all of the crystals studied, it was found that no amorphous layer was formed above the critical temperature (Tc), and that Tc is linearly corrlated to a melting point of a crystal. High substitutational fraction of implanted ions and low defect density were obtained by an implanatation above Tc.