Effect Of Growth Temperature Research Articles

Sensitive direct converting thin film x-ray detector utilizing β-Ga2O3 fabricated via MOCVD

Ga2O3 has been considered as one of the most suitable materials for x-ray detection, but its x-ray detection performance is still at a low level due to the limitation of its quality and absorbance, especially for hard x-ray. In this work, the effects of growth temperature and miscut angle of the sapphire substrate on the crystal quality of Ga2O3 thin films were investigated based on the MOCVD technique. It was found that the crystal growth mode was transformed from island growth to step-flow growth using miscut sapphire substrates and increasing growth temperature, which was accompanied by the improvement of the crystal quality and the reduction of the density of trapped states. Ga2O3 films with optimal crystal quality were finally prepared on a 4° miscut substrate at 900 °C. The x-ray detector based on this film shows good hard x-ray response with a sensitivity of 3.72 × 105μC·Gyair−1·cm−2. Furthermore, the impacts of Ga2O3 film crystal quality and trap density on the x-ray detector were investigated in depth, and the mechanism of the photoconductive gain of the Ga2O3 thin-film x-ray detector was analyzed.

Effect of Growth Temperature on the Structural, Morphological, and Magnetic Properties of Sputtered Ni Thin Film

Effect of Growth Temperature on the Structural, Morphological, and Magnetic Properties of Sputtered Ni Thin Film

Modulating effects of temperature on CO2-inhibited isoprene emissions in Eucalyptus urophylla

Terrestrial vegetation emits substantial amounts of highly reactive isoprene, significantly impacting atmospheric chemistry and climate change. Both atmospheric carbon dioxide (CO2) concentration and temperature can influence plant isoprene emissions; however, whether these factors have a synergistic effect remains unclear, particularly for tropical/subtropical plants. In this study, we conducted in-situ controlled experiments on Eucalyptus urophylla, a representative tropical/subtropical species, to investigate the seasonal variation in the response of isoprene emissions to CO2 concentrations (ISOP-CO2 response) and to identify potential controlling factors. The results showed that high CO2 exerts a nearly linear inhibitory effect on isoprene emissions, as indicated by the slope of the ISOP-CO2 response curve. This inhibitory effect exhibited evident seasonal changes, with stronger suppression during cooler seasons and weaker suppression during warmer seasons. This finding contrasts with the default ISOP-CO2 response in the MEGAN model, which ignored seasonal variation. Further analysis showed a significant correlation between the slope of the ISOP-CO2 response curve and growth temperature from the past 10 days, indicating that these metrics are effective indicators for predicting seasonal changes. Our findings reveal a synergistic mechanism between temperature and CO2 concentration effects on isoprene emissions. By coupling the effects of growth temperature with the ISOP-CO2 response, this mechanism can be integrated into models to provide more accurate predictions of future isoprene emissions, reducing prediction biases, especially during cooler seasons.

Tailoring Ge membrane adhesion strength: Impact of growth parameters and porous layer thickness

The recent exploration of porous Germanium (PGe) techniques marks a significant advancement in the scalable production of detachable Ge membranes and devices. However, there is a notable gap in the comprehensive understanding of the critical factors necessary to control the adhesion strength of these nanomembranes. This study delves into the effects of Ge growth temperature, in-situ annealing processes, and the thickness of the PGe layer on the reorganization of the porous interlayer, subsequently influencing the properties of the separation layer. We particularly focus on how adjusting these parameters can fine-tune the adhesion strength of the epitaxial layer, ranging from a freestanding state to a fully bonded nanomembrane. A key finding is that the thermal budget experienced by the porous structure during the buffer layer's growth significantly affects the nanomembrane's adhesion characteristics; it is imperative to minimize this duration, especially at higher growth temperatures. Our research demonstrates that by precisely controlling the voids within the PGe layer, the adhesion strength can be effectively modulated through variations in the PGe layer's thickness. The outcomes of this study offer crucial insights into the controllable adhesion strength of Ge nanomembranes, paving the way for the targeted development of detachable devices.

Correlation between photoluminescence and radiative defects in silicon oxycarbide films due to the growth temperature effect

In this work, the effect of growth temperature (678–988 °C) on silicon oxycarbide (SiCxOy) samples obtained by hot filament chemical vapor deposition (HFCVD) is reported. The samples were deposited on silicon (Si) n-type (100) and quartz substrates for optical and structural studies. At a lower temperature (678 °C), silicon oxycarbide powders were formed on Si substrates due to the homogeneous reaction occurring in the gas phase. However, for temperatures between 804 and 988 °C, silicon oxycarbide films were formed on Si substrates. By changing the temperature from 678 to 988 °C, both carbon (C) concentration (21.2–17.7 wt.%) and the relative percentage of Si–C bond density (%RtSi-C = 11.34–3.47 %) decreased, as demonstrated by EDS and FTIR measurements, respectively. On the other hand, the content of relative Si–O–Si bonds located around 1060 cm−1 remained dominant in all cases, resulting in SiCxOy films with an amorphous SiOx-type structure. These films exhibited strong photoluminescence (PL) centered in the blue region (∼3 eV), where Si–NOVS radiative centers were preferentially responsible for PL emission. At a lower temperature (678 °C), the PL intensity decreased. The determination of optical bandgap energy (Eopt) using Tauc Plots coincided with the emission due to luminescent centers (∼3 and ∼2.7 eV) observed in PL, indicating that the radiative transitions were due to defects. The AFM measurements showed an increase in roughness from 5.01 to 16.20 nm as the growth temperature decreased, as expected according to SEM measurements.

Study of the Effect of Growth Temperature on the Properties of Nitrogen-Doped Carbon Nanotubes for Designing Nanopiezotronic Devices

Study of the Effect of Growth Temperature on the Properties of Nitrogen-Doped Carbon Nanotubes for Designing Nanopiezotronic Devices

Effect of foreign impurity and growth temperatures on hexagonal structure and fundamental properties of ZnO nanorods.

This study examined the influence of growth temperature and dopant concentration on the properties of Gd- and Ni-doped zinc oxide nanorods (ZnO NRs). ZnO seed layers were deposited on glass substrates using a sol-gel and dip-coating approach. Gd- and Ni-doped ZnO NRs were hydrothermally grown on the seed layers at different temperatures such as 75, 90, and 105°C for a constant growth time of 5 h. The crystal structure, optical, surface morphology views, and electrical properties of the NRs were extensively investigated by x-ray diffraction (XRD), scanning electron microscopy (SEM), UV-visible spectroscopy, and four probe experimental methods. The XRD analysis confirmed the successful substitution of Zn2+ ions by Gd3+ and Ni2+ within the ZnO main matrices. The reordering of hexagonal structures with varied electronegativity, ionic radius dimensions, and valence electron states of Gd and Ni dopants affected seriously the fundamental characteristic features of NRs. The SEM images showed that the ZnO NRs grown at 90°C possessed a more favorable surface morphology and well-defined hexagonal shape compared with those grown at other growth temperatures. Higher dopant concentration led to an increase in NR diameter but a decrease in density depending on the increase in the space between the NRs. Additionally, the optical transmittance was found to generally enhance with increasing dopant concentration. The results obtained highlighted the interplay between growth temperature, dopant type and concentration in tailoring the structural, morphological, and optical properties of Gd- and Ni-doped ZnO NRs, paving the way for the development of optimized nanomaterials for various applications. RESEARCH HIGHLIGHTS: The XRD analysis confirmed the successful substitution of Zn2+ ions by Gd3+ and Ni2+ within the ZnO main matrices. The SEM images showed that the ZnO NRs grown at 90°C possessed a more favorable surface morphology and well-defined hexagonal shape compared with those grown at other growth temperatures. The optical transmittance was found to generally enhance with increasing dopant concentration. The results obtained highlighted the interplay between growth temperature, dopant type and concentration in tailoring the structural, morphological, and optical properties of Gd- and Ni-doped ZnO NRs, paving the way for the development of optimized nanomaterials for various applications.

Effect of growth temperature on properties of β-Ga2O3 films grown on AlN by low-pressure chemical vapor deposition

In this work, thin films of β-Ga2O3 were prepared on AlN substrates using low-pressure chemical vapor deposition (LPCVD). The effects of growth temperature on the crystal structure, surface morphology, chemical composition, and photoluminescence properties of the synthesized β-Ga2O3 thin films were then systematically investigated. The results indicated that various films grown at different temperatures in the range of 550–850 °C had a preferred growth orientation in the planar direction (−201). The surface roughness was seen to reduce gradually as the growth temperature was raised. However, excessive temperature (850 °C) led to a reduction in the densification of the prepared films. The surface chemistry of the films was analyzed using X-ray photoelectron spectroscopy (XPS) and the O/Ga ratio of the optimal film was calculated to be 1.49, which is quite close to the optimal stoichiometric ratio of 1.5. Multiple luminescence bands were obtained in the photoluminescence spectra of the films taken at room temperature, where the blue emission formed the dominant bands. The results of the study suggest that the growth temperature has a significant impact on the film properties and that appropriately increasing the growth temperature leads to substantial improvement in the overall quality of the β-Ga2O3 thin films.

Unraveling the reasons for failure to control Amaranthus albus: insights into herbicide application at different growth stages, temperature effect, and herbicide resistance on a regional scale.

This study investigates factors contributing Amaranthus albus control failure in processing tomato fields in northern Israel. The study region is characterized by a significant climate gradient from east to west, providing the opportunity to investigate the effect of critical elements of the agricultural environment, e.g., temperature. Eight populations were collected from commercial fields in this region. Post-emergence herbicide efficacy of metribuzin, a photosystem II inhibitor, and rimsulfuron, an acetolactate synthase (ALS) inhibitor, was assessed through dose-response analyses at various growth stages. Temperature effects on control efficacy and resistance mechanisms were also explored. Standard metribuzin dose (X) was ineffective on A. albus plants with more than six true-leaves, whereas 2X dose proved effective. Rimsulfuron at 16X dose was ineffective on plants with more than four true-leaves. We report here the first case of target site resistance to ALS inhibitors in A. albus, due to point mutation in the ALS gene (Pro197 to Leu). Furthermore, our findings suggest potential involvement of CYT P450 enzymes in enhanced metabolizing of rimsulfuron. An overall decrease in dry weight was observed in response to both herbicides at 16/22 °C (P < 0.0001). Rimsulfuron was effective against only one population when applied at 28/34 °C. A possible fitness cost associated with target site-resistant biotypes was observed under low temperature conditions, leading to effective control. This regional-scale study highlights the challenges faced by growers, emphasizes the need for adapting management practices to the local climatic conditions and lays the groundwork for implementing location-specific weed management strategies in commercial fields. © 2024 The Author(s). Pest Management Science published by John Wiley & Sons Ltd on behalf of Society of Chemical Industry.

Effect of Growth Temperature on Strain during Growth and Crack Suppression in AlGaN Templates on Sapphire Substrates for Deep Ultraviolet Light‐Emitting Diodes

The crack formations in AlGaN templates for deep ultraviolet (DUV) light‐emitting diodes (LEDs) are investigated and successfully suppressed. The strain values in AlGaN thick layers on sapphire substrates by in situ wafer curvature measurements and ex situ X‐ray diffraction measurements are evaluated. It is found that the tensile strain during the AlGaN thick layer growth comes from a thermal expansion difference between the AlGaN thick layer and the sapphire substrate as the temperature changes from the AlN nucleation layer growth to the AlGaN thick layer growth. When the temperature change is 100 °C and less, the tensile strain of 0.1% and less is observed during the AlGaN thick layer growth, resulting in no crack formations in the AlGaN thick layer. Furthermore, a DUV LED layer structure grown on such a crack‐free AlGaN template shows no crack formations. Thus, to suppress crack formation in templates fabricated for DUV LEDs, their growth temperature must be optimized by considering thermal expansions caused by the changes in the growth temperature from the nucleation layer to the thick layer.

Effects of growth temperature on phase transformation and crystal quality of Ga2O3 films grown on Si/AlN composite substrates by MOCVD

High-quality ε-phase Ga2O3 thin film with a FWHM of 0.68° for the (002) plane in omega scan is grown on Si/AlN composite substrate by MOCVD. The crystal phase evolution and microstructure of Ga2O3 thin films at different temperatures are studied systematically. It is found that Ga2O3 changes from amorphous at 400 °C to ε-phase at 500 °C. As the temperature further rises to 600 °C, it eventually transforms into β-phase. Due to the difference of lattice mismatch, ε-Ga2O3 is crystalline with high crystallinity on the surface of the film, but amorphous at the interface, while β-Ga2O3 is polycrystalline. In addition, ε-Ga2O3 thin films not only have the smoothest surface with roughness of 2.63 nm, but also the content of point defects (such as oxygen vacancies) is significantly reduced compared with that of amorphous and β-Ga2O3 thin films. This work provides important references for the hetero-integration of Si and Ga2O3 by MOCVD, and is beneficial for the development of low cost and high crystal quality Ga2O3 thin films which are suitable for high voltage and ultraviolet optoelectronics.

Growth Temperature Effects in Nanoscale-Thick GaTe Films on c-Sapphire Substrate by Molecular Beam Epitaxy: Implications for High-Performance Optoelectronic Devices

Growth Temperature Effects in Nanoscale-Thick GaTe Films on c-Sapphire Substrate by Molecular Beam Epitaxy: Implications for High-Performance Optoelectronic Devices

The Influence Mechanism of Quantum Well Growth and Annealing Temperature on In Migration and Stress Modulation Behavior.

This study explores the effects of growth temperature of InGaN/GaN quantum well (QW) layers on indium migration, structural quality, and luminescence properties. It is found that within a specific range, the growth temperature can control the efficiency of In incorporation into QWs and strain energy accumulated in the QW structure, modulating the luminescence efficiency. Temperature-dependent photoluminescence (TDPL) measurements revealed a more pronounced localized state effect in QW samples grown at higher temperatures. Moreover, a too high annealing temperature will enhance indium migration, leading to an increased density of non-radiative recombination centers and a more pronounced quantum-confined Stark effect (QCSE), thereby reducing luminescence intensity. These findings highlight the critical role of thermal management in optimizing the performance of InGaN/GaN MQWs in LEDs and other photoelectronic devices.

Effect of growth temperatures on the structural and optical properties of bulk tris-(8-hydroxyquinoline) aluminium (III)

Effect of growth temperatures on the structural and optical properties of bulk tris-(8-hydroxyquinoline) aluminium (III)

Controls of temperature and mineral growth rate on lithium and sodium incorporation in abiotic aragonite

The use of Li/Ca, Na/Ca and Li/Mg ratios in biogenic aragonite exhibits high potential for reconstructing environmental parameters such as temperature and/or salinity. To date however, only a little is known about the mechanisms controlling the incorporation of monovalent metals such as Li+ and Na+ in aragonite. In this study, the effects of temperature and growth rate on Li and Na incorporation into abiotically precipitated aragonite were experimentally investigated. The results for aragonite overgrowths at 5, 15 and 25 °C and for the surface normalized growth rate range 10–8.6 ≤ rp ≤ 10–7.1 (mol/m2/s) suggest that apparent distribution coefficients (i.e., DMe+=CMe+CCaaragonitemMe+mCasolution) of Li and Na are mainly controlled by mineral growth rate, whereas temperature has a minor effect. The combined effect of growth rate and temperature on DLi and DNa can be described as:LogDLi=0.836±0.028Logrp−0.026±0.002T+2.958±0.221;R2=0.97LogDNa=0.456±0.030Logrp−0.018±0.002T−0.253±0.234;R2=0.90where Log rp is the growth rate in mol/m2/s and T is the temperature in degrees Celsius.The DLi and DNa values increase at increasing mineral growth rate, but also decrease as a function of temperature in experiments with similar normalized growth rate. These observations suggest that the incorporation of Li and Na in abiotic aragonite is controlled by the density of mineral surface defect sites that are correlated with the degree of saturation of the reactive solution with respect to aragonite. Interestingly, no correlation between Li/Mg in the aragonite overgrowths and temperature of formation was observed in this study. This difference of Li/Mg and temperature correlations between abiotic aragonite and natural biogenic samples is intriguing and underlines the need for robust understanding of elemental incorporation during carbonate mineral formation, and proxy calibrations specific for growth conditions (e.g., abiotic versus biogenic). The results of this study do not support the use of Li/Mg as a temperature proxy in abiotic aragonite.

Investigating the impact of growth temperature on the direct integration of pure phase 2H-MoTe2 with Si(1 1 1) using molecular beam epitaxy

Group-VI transition metal dichalcogenides (TMDCs) have garnered significant attention due to their novel properties in the two-dimensional realm. Among these TMDCs, MoTe2 is a particularly intriguing material with a small difference between Gibbs free energies of its semiconducting and semimetallic phases, rendering it suitable for a wide array of applications. In this study, we report the molecular beam epitaxy (MBE) growth of 2H-MoTe2 directly on a silicon (111) substrate, which holds great significance due to its compatibility with the existing integrated circuit industry. By employing a growth strategy involving a Te-rich silicon surface, we achieved the growth of high-quality, phase-pure 2H-MoTe2 films. The effect of growth temperature on the film quality was investigated, revealing that the growth at 450 °C led to highly crystalline and layered growth. The thickness, roughness and stoichiometry of the grown films were characterized using spectroscopic ellipsometry, atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). Raman spectroscopy confirmed the presence of the desired 2H-phase for the grown films. The direct integration of MoTe2 with silicon opens up exciting possibilities for its utilization in nanoelectronics and optoelectronics devices.

Effect of growth temperature on the microstructure and properties of epitaxial MoS2 monolayers grown by metalorganic chemical vapor deposition

Metalorganic chemical vapor deposition (MOCVD) is a promising technique for wafer-scale synthesis of MoS2 monolayers for 2D field-effect transistors (2D-FETs) and related devices. Epitaxial growth of MoS2 on sapphire provides films that are crystallographically well-oriented but typically contain low-angle grain boundaries (e.g., mirror twins), voids, and other defects depending on growth conditions and substrate characteristics. In this study, we investigate microstructure, optical properties, and field-effect characteristics of wafer-scale MoS2 monolayers grown by MOCVD on c-plane sapphire over a narrow window of growth temperatures (900–1000 °C). The density of low-angle grain boundaries in the MoS2 monolayer was found to decrease dramatically from 50% areal coverage for films grown at 900 °C to 5% at 1000 °C. This decrease in low-angle grain boundary density is correlated with an increase in the room-temperature photoluminescence intensity of A excitons and a decrease in the full-width-half maximum (FWHM) of the Raman A1g peak, which are typically indicative of a general reduction in defects in MoS2. However, the best transport properties (e.g., mean field-effect mobility mFE = 17.3 cm2/V s) were obtained in MoS2 monolayers grown at an intermediate temperature of 950 °C. It was found that as the growth temperature increased, small regions bound by high-angle boundaries begin to appear within the monolayer and increase in areal coverage, from ∼2% at 900 °C to ∼5% at 950 °C to ∼10% at 1000 °C. The growth temperature of 950 °C, therefore, provides an intermediate condition where the combined effects of low-angle and high-angle boundaries are minimized. The results of this study provide guidance on MOCVD growth and characterization that can be used to further optimize the performance of MoS2 2D-FETs.

Tuning the crystalline orientation of quasi 1D anisotropic Sb2Se3 as a function of growth temperature for thin film photovoltaic applications

Antimony selenide (Sb2Se3) shows excellent photon absorption in the visible region and hence gaining tremendous attention from the last decade for thin film photovoltaics. Also, it has unique one-dimensional crystal structure and simple binary composition. However, the growth of Sb2Se3 thin films with its predominant orientation along [hk1] to make use of easy electrical charge transport seems challenging due to various governing growth parameters. In this work, we have studied the role of growth temperature (between 200 ℃ and 320 ℃) in the crystalline orientation of Sb2Se3 thin films on glass substrates via close-space thermal evaporation. In addition to growth orientation, we have investigated the effect of growth temperature on the surface morphology, elemental composition, film thickness, and optical properties of Sb2Se3 thin films. Electrical properties and photoresponse were measured on [hkl] and [hk0] oriented films to understand the effect of anisotropy and it is inferred that [hk1] oriented film as a favorable one for the charge transport. Also, the photoresponse results showed fair photoconductance under white light illumination and zero applied bias.

In situ transmission electron microscopy of temperature-dependent carbon nanofiber and carbon nanotube growth from ethanol vapor

Carbon nanofibers (CNFs) and carbon nanotubes (CNTs), which have been known for decades, recently gained significant commercial interests for various applications. However, the controlled synthesis of CNF/CNT has been hindered by the lack of nanoscale experimental evidence on how the growth temperature affects the growth process under real growth environment. We report the in situ transmission electron microscopy (TEM) experiments to directly observe Ni catalyzed CNF/CNT growth from alcohol precursor at near atmospheric pressure using a homebuilt bubbler system for the introduction of ethanol vapor. Using real time imaging, we revealed the active state of the Ni catalyst during the temperature-dependent CNF/CNT growth (600–800 °C). We observed the formation of CNFs starting from 600 °C and CNTs were formed at higher temperatures. The lattice parameter measurements pointed to an expansion of the Ni lattice as the temperature was increased, which we attribute to increased carbon solubility. The as-grown CNFs and CNTs were further characterized by XPS, Raman spectroscopy, and EELS, that allowed to have a highly reliable overall view of the structure changes with temperature. Results revealed that the change in structure with temperature was caused by the combined effects of increased carbon solubility and graphitization of the walls of the growing nanostructure. This increased carbon solubility in turn affected carbon diffusion and could be the reason for the change in structure from CNF to CNT at high temperature. Using in situ TEM we clearly revealed the effect of growth temperature on the structural changes.

Leaf hydraulic properties of Antarctic plants: effects of growth temperature and its coordination with photosynthesis.

One of the well-documented effects of regional warming in Antarctica is the impact on flora. Warmer conditions modify several leaf anatomical traits of Antarctic vascular plants, increasing photosynthesis and growth. Given that CO2 and water vapor partially share their diffusion pathways through the leaf, changes in leaf anatomy could also affect the hydraulic traits of Antarctic plants. We evaluated the effects of growth temperature on several anatomical and hydraulic parameters of Antarctic plants and assessed the trait co-variation between these parameters and photosynthetic performance. Warmer conditions promoted an increase in leaf and whole plant hydraulic conductivity, correlating with adjustments in carbon assimilation. These adjustments were consistent with changes in leaf vasculature, where Antarctic species displayed different strategies. At higher temperature, Colobanthus quitensis decreased the number of leaf xylem vessels, but increased their diameter. In contrast, in Deschampsia antarctica the diameter did not change, but the number of vessels increased. Despite this contrasting behavior, some traits such as a small leaf diameter of vessels and a high cell wall rigidity were maintained in both species, suggesting a water-conservation response associated with the ability of Antarctic plants to cope with harsh environments.