With the continuous down scaling of radio frequency metal–oxide–semiconductor field-effect transistors (RF MOSFETs) into a 65 nm node, the RF performance of unity-gain cutoff frequency ( fT), the maximum frequency of oscillation ( fmax), and the minimum noise figure (NFmin) show much smaller dependences on short-channel effects due to increases in drain current and transconductance (gm), which originate from the short-channel effects. We have studied the effect of drain bias on the RF performance of 65-nm-node MOSFETs. Both the fT and NFmin improve linearly with increasing drain voltage, in contrast with their independence on drain bias in longer-channel devices. Additionally, although fT improves continuously in sub-65-nm node devices, fmax and NFmin deteriorate more in 65-nm-node transistors than in 90-nm-node devices owing to a limiting parasitic effect.