Dynamic Gate Research Articles

Dynamically modulated gating process of nanoporous membrane at sub-2-nm speed

<h2>Summary</h2> Gating properties of nanochannels, as the key nanofluidic behavior, have huge applications in sensing, mass transportation, and separation. The terminal "open" and "closed" states in response to changes in environments have been widely studied. Yet to date, control of the dynamic gating process at quantitatively nanoscale speed remains a great challenge. Here, we modulate the dynamically electric gating process in a polypyrrole (PPy)-based nanoporous membrane system at sub-2-nm speed. The nanoconfinement environment endows the polymer chain with excellent electrochemical properties, and the polymer film swells or contracts at a controlled speed, accompanied by a reversible counterion uptake or expulsion. With this switching process, the thickness of the polymer changes by 83%, resulting in a fully closed gating state. In addition to atomic force microscope (AFM) topography <i>in situ</i>, the small operation voltages and ultra-high-strain scope, along with biocompatible materials, make this design promising for smart nanorobot and wearable electronics.

Dynamic gate configurations at airports: A network optimization approach

We consider the configuration of airport gates with passenger boarding bridges. The set of aircraft types that can be serviced at a gate depends on the installed boarding bridge(s). For instance, the Airbus A380 can only be serviced at gates equipped with a passenger boarding bridge that is able to access its upper level. Given the dynamic development of both the number of aircraft movements and the fleet mix at airports, the recurring decision problem is to determine for each gate whether and when the passenger boarding bridge configuration should be changed. The objective is to minimize investment and operating costs associated with the bridges as well as penalty costs for aircraft which cannot be processed because gates that are equipped with adequate gate configurations are not available. We propose a mixed-integer model formulation and present its underlying network structure. To solve the problem, we employ a column generation based heuristic approach. We demonstrate the good performance of the heuristic in a computational study and present a detailed discussion of the decisions taken as part of a case study.

A new low-power Dynamic-GDI full adder in CNFET technology

In this paper, a new low-power full-adder circuit based on the proper combination of dynamic logic style and Gate Diffusion Input (GDI) low-power technique is proposed in Carbon Nanotube Field Effect Transistor (CNFET) technology. Using the proposed approach, the basic logic circuits such as XOR and XNOR gates are implemented which results in a full-swing, full-adder cell in the CNFET technology. The proposed circuit is simulated in HSPICE using CNFET model parameters. Finally, the simulation results justify a good improvement in the major circuit performances such as power consumption, delay and power-delay product (PDP) parameters for the proposed full-adder circuit.

Superrobust Geometric Control of a Superconducting Circuit

Geometric phases accompanying adiabatic quantum evolutions can be used to construct robust quantum control for quantum information processing due to their noise-resilient feature. A significant development along this line is to construct geometric gates using nonadiabatic quantum evolutions to reduce errors due to decoherence. However, it has been shown that nonadiabatic geometric gates are not necessarily more robust than dynamical ones, in contrast to an intuitive expectation. Here we experimentally investigate this issue for the case of nonadiabatic holonomic quantum computation~(NHQC) and show that conventional NHQC schemes cannot guarantee the expected robustness due to a cross coupling to the states outside the computational space. We implement a different set of constraints for gate construction in order to suppress such cross coupling to achieve an enhanced robustness. Using a superconducting quantum circuit, we demonstrate high-fidelity holonomic gates whose infidelity against quasi-static transverse errors can be suppressed up to the fourth order, instead of the second order in conventional NHQC and dynamical gates. In addition, we explicitly measure the accumulated dynamical phase due to the above mentioned cross coupling and verify that it is indeed much reduced in our NHQC scheme. We further demonstrate a protocol for constructing two-qubit NHQC gates also with an enhanced robustness.

A Smart Gate Driver IC for GaN Power HEMTs With Dynamic Ringing Suppression

Conventional di/dt and dv/dt control and gate protection techniques for gallium nitride (GaN) power transistors usually employ external controllers, isolation circuits, discrete pull-up, and pull-down resistors. With large number of components, power modules become more complex and may introduce additional parasitic. Gate driver ICs with segmented output stages and dynamic gate driving have been reported previously to be effective in simultaneously suppressing gate ringing and overshoot voltage while maintaining fast switching speed. However, the programming for dynamic gate driving is rather complicated, requiring the user to load a sequence of driving patterns obtained from trial and error ahead of time. This article presents a gate driver IC for E-mode GaN power transistors with seven segmented output stages. More importantly, it offers a simplified programming method for the dynamic gate driving pattern. The optimal gate drive pattern can be defined by simply adjusting one external bias resistor. The proposed method eliminates the complex trial and error digital control, and can potentially promoting the wider acceptance of dynamic gate driving by the industry. The timing resolution for the gate drive pattern can be varied in steps from 0.5 to 5 ns. It can also be used to drive many commercially available GaN power transistors.

Path-optimized nonadiabatic geometric quantum computation on superconducting qubits

Quantum computation based on nonadiabatic geometric phases has attracted a broad range of interests, due to its fast manipulation and inherent noise resistance. However, it is limited to some special evolution paths, and the gate-times are typically longer than conventional dynamical gates, resulting in weakening of robustness and more infidelities of the implemented geometric gates. Here, we propose a path-optimized scheme for geometric quantum computation (GQC) on superconducting transmon qubits, where high-fidelity and robust universal nonadiabatic geometric gates can be implemented, based on conventional experimental setups. Specifically, we find that, by selecting appropriate evolution paths, the constructed geometric gates can be superior to their corresponding dynamical ones under different local errors. Numerical simulations show that the fidelities for single-qubit geometric phase, π/8 and Hadamard gates can be obtained as 99.93%, 99.95% and 99.95%, respectively. Remarkably, the fidelity for two-qubit control-phase gate can be as high as 99.87%. Therefore, our scheme provides a new perspective for GQC, making it more promising in the application of large-scale fault-tolerant quantum computation.

Ambipolar Gate Modulation Technique for the Reduction of Offset and Flicker Noise in Graphene Hall-Effect Sensors

There is a constant need for Hall-effect magnetic sensors with lower noise and lower offset for the high accuracy analog applications driven primarily by industrial and automotive markets, for example, high dynamic range current sensing for battery management in electric vehicles. Graphene-based Hall sensors (GHSs) demonstrate low thermal noise due to their high carrier mobility but suffer from large low-frequency flicker noise and offset limiting the prevalent low-frequency applications. In this paper, we present the results of a recently proposed gate modulation scheme for GHSs that uses dynamic ambipolar operation to up-convert the input magnetic signal to higher modulating frequencies while the offset and flicker noise remain spectrally unchanged and thus enabling thermal noise limited performance. We implement a prototype GHS using a scalable fabrication process with CVD graphene transferred on to silicon-oxide and followed by standard thin film and subsequent photolithographic processes. The measurement results confirm the effectiveness of dynamic ambipolar gate modulation technique in producing low offset of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$- 524\,\,\mu \mathrm{T}$ </tex-math></inline-formula> in conjunction with three orders of magnitude estimated improvement in the low frequency noise performance.

Super-robust nonadiabatic geometric quantum control

Nonadiabatic geometric quantum computation (NGQC) and nonadiabatic holonomic quantum computation (NHQC) have been proposed to reduce the run time of geometric quantum gates. However, in terms of robustness against experimental control errors, the existing NGQC and NHQC scenarios have no advantage over standard dynamical gates in most cases. Here, we give the reasons why nonadiabatic geometric gates are sensitive to the control errors and, further, we propose a scheme of super-robust nonadiabatic geometric quantum control, in which the super-robust condition can guarantee both high speed and robustness of the geometric gate. To illustrate the working mechanism of super-robust geometric quantum gates, we give two simple examples of SR-NGQC and SR-NHQC for two- and three-level quantum systems, respectively. Theoretical and numerical results with the experimental parameters indicate that our scheme can significantly improve the gate performance compared to the previous NGQC, NHQC, and standard dynamical schemes. Super-robust geometric quantum computation can be applied to various physical platforms such as superconducting qubits, quantum dots, and trapped ions. All of these sufficiently show that our scheme provides a promising way towards robust geometric quantum computation.

Dual-color charge-sensitive infrared phototransistors with dynamic optical gate

Infrared multispectral photodetectors with high performance show great potential in a broad range of applications. Here, sensitive and controllable dual-color photodetection at 10.6 and 15.7 μm is demonstrated by using a charge sensitive infrared phototransistor (CSIP) with dynamical optical gate. The CSIP device is fabricated in a GaAs/AlGaAs double quantum well (QW) crystal with both upper and lower QWs (7 and 11 nm thick, respectively) being photosensitive via intersubband absorption and, hence, each QW corresponding to one target wavelength (10.6 and 15.7 μm, respectively). Moreover, the upper QW serves as a photosensitive floating gate (FG), while the lower QW functions as the conducting channel of the phototransistor. By periodically lifting-up (lowering-down) the electrostatic potential of FG, the photoresponse at 10.6 (15.7 μm) associated with photoexcitation in upper (lower) QW can be achieved. This electrically controllable photoresponse together with intrinsically high photoconductive gain (∼102) provides a scheme to realize sensitive dual-color photodetection for infrared optoelectronic applications.

Unselective ground-state blockade of Rydberg atoms for implementing quantum gates

A dynamics regime of Rydberg atoms, unselective ground-state blockade (UGSB), is proposed in the context of Rydberg antiblockade (RAB), where the evolution of two atoms is suppressed when they populate in an identical ground state. UGSB is used to implement a SWAP gate in one step without individual addressing of atoms. Aiming at circumventing common issues in RAB-based gates including atomic decay, Doppler dephasing, and fluctuations in the interatomic coupling strength, we modify the RAB condition to achieve a dynamical SWAP gate whose robustness is much greater than that of the nonadiabatic holonomic one in the conventional RAB regime. In addition, on the basis of the proposed SWAP gates, we further investigate the implementation of a three-atom Fredkin gate by combining Rydberg blockade and RAB. The present work may facilitate to implement the RAB-based gates of strongly coupled atoms in experiment.

Application of Dynamic Fault Tree Analysis to Prioritize Electric Power Systems in Nuclear Power Plants

Because the scope of risk assessments at nuclear power plants (NPPs) is being extended both spatially and temporally, conventional, or static fault trees might not be able to express failure mechanisms, or they could be unnecessarily conservative in their expression. Therefore, realistic assessment techniques are needed to adequately capture accident scenarios. In multi-unit probabilistic safety assessment (PSA), fault trees naturally become more complex as the number of units increases. In particular, when considering a shared facility between units of the electric power system (EPS), static fault trees (SFTs) that prioritize a specific unit are limited in implementing interactions between units. However, dynamic fault trees (DFTs) can be available without this limitation by using dynamic gates. Therefore, this study implements SFTs and DFTs for an EPS of two virtual NPPs and compares their results. In addition, to demonstrate the dynamic characteristics of the shared facilities, a station blackout (SBO), which causes the power system to lose its function, is assumed—especially with an inter-unit shared facility, AAC DG (Alternate AC Diesel Generator). To properly model the dynamic characteristics of the shared EPS in DFTs, a modified dynamic gate and algorithm are introduced, and a Monte Carlo simulation is adopted to quantify the DFT models. Through the analysis of the DFT, it is possible to confirm the actual connection priority of AAC DG according to the situation of units in a site. In addition, it is confirmed that some conservative results presented by the SFT can be evaluated from a more realistic perspective by reflecting this.

Modularity and robustness of frontal cortical networks

Neural activity underlying short-term memory is maintained by interconnected networks of brain regions. It remains unknown how brain regions interact to maintain persistent activity while exhibiting robustness to corrupt information in parts of the network. We simultaneously measured activity in large neuronal populations across mouse frontal hemispheres to probe interactions between brain regions. Activity across hemispheres was coordinated to maintain coherent short-term memory. Across mice, we uncovered individual variability in the organization of frontal cortical networks. A modular organization was required for the robustness of persistent activity to perturbations: each hemisphere retained persistent activity during perturbations of the other hemisphere, thus preventing local perturbations from spreading. A dynamic gating mechanism allowed hemispheres to coordinate coherent information while gating out corrupt information. Our results show that robust short-term memory is mediated by redundant modular representations across brain regions. Redundant modular representations naturally emerge in neural network models that learned robust dynamics.

Liquid gating technology

Abstract Recent years have witnessed the emergence of liquid gating technologies that employ liquids as structural materials to provide dynamic gating control. Such technologies have attracted considerable attention globally owing their antifouling, energy-saving, reversible, and reconfigurable characteristics. This study considers a new perspective to discuss advancements in liquid gating technologies, including the concept, mechanisms, development, designs, and emerging applications. Moreover, recommendations are provided for the selection of the gating liquid and porous matrix, preparation processes, technical parameters, and theoretical modelling to guide related research. Emerging applications of liquid gating technologies, such as microscale flow control, multiphase separation, chemical detection, and biomedical catheters, are reported. Finally, the challenges currently faced by these technologies are discussed and potential directions for further research are explored to promote the use of these technologies in future applications.

Implementation of Geometric Quantum Gates on Microwave‐Driven Semiconductor Charge Qubits

AbstractA semiconductor‐based charge qubit, confined in double quantum dots, can be a platform to implement quantum computing. However, it suffers severely from charge noises. Here, a theoretical framework to implement universal geometric quantum gates in this system is provided. It is found that, while the detuning noise can be suppressed by operating near its corresponding sweet spot, the tunneling noise, on the other hand, is amplified and becomes the dominant source of error for single‐qubit gates, a fact previously insufficiently appreciated. It is demonstrated, through numerical simulation, that the geometric gates outperform the dynamical gates across a wide range of tunneling noise levels, making them particularly suitable to be implemented in conjunction with microwave driving. To obtain a nontrivial two‐qubit gate, a hybrid system is introduced with charge qubits coupled by a superconducting resonator. When each charge qubit is in resonance with the resonator, it is possible to construct an entangling geometric gate with fidelity higher than that of the dynamical gate for experimentally relevant noise levels. Therefore, the results suggest that geometric quantum gates are powerful tools to achieve high‐fidelity manipulation for the charge qubit.

Noncyclic Geometric Quantum Gates with Smooth Paths via Invariant‐Based Shortcuts

AbstractNonadiabatic geometric quantum computation is dedicated to the realization of high‐fidelity and robust quantum gates, which are necessary for fault‐tolerant quantum computation. However, it is limited by cyclic and mutative evolution path, which usually requires longer gate‐time and abrupt pulse control, weakening the gate performance. Here, a scheme to realize geometric quantum gates with noncyclic and nonadiabatic evolution via invariant‐based shortcuts is proposed, where universal quantum gates can be induced in one step without path mutation and the gate time is also effectively shortened. Our numerical simulations show that, comparing with the conventional dynamical gates, the constructed geometric gates have stronger resistance not only to systematic errors, induced by both qubit‐frequency drift and the deviation of the amplitude of the driving fields, but also to environment‐induced decoherence effect. In addition, this scheme can also be implemented on a superconducting circuit platform, with the fidelities of single‐qubit and two‐qubit gates higher than 99.97% and 99.84%, respectively. Therefore, this scheme provides a promising way to realize high‐fidelity fault‐tolerant quantum gates for scalable quantum computation.

Attractor dynamics gate cortical information flow during decision-making.

Decisions are held in memory until enacted, which makes them potentially vulnerable to distracting sensory input. Gating of information flow from sensory to motor areas could protect memory from interference during decision-making, but the underlying network mechanisms are not understood. Here, we trained mice to detect optogenetic stimulation of the somatosensory cortex, with a delay separating sensation and action. During the delay, distracting stimuli lost influence on behavior over time, even though distractor-evoked neural activity percolated through the cortex without attenuation. Instead, choice-encoding activity in the motor cortex became progressively less sensitive to the impact of distractors. Reverse engineering of neural networks trained to reproduce motor cortex activity revealed that the reduction in sensitivity to distractors was caused by a growing separation in the neural activity space between attractors that encode alternative decisions. Our results show that communication between brain regions can be gated via attractor dynamics, which control the degree of commitment to an action.

Reliability Analysis of Dynamic Fault Tree Based on Binary Decision Diagrams for Explosive Vehicle

Dynamic fault tree is often used to analyze system reliability. The Markov model is a commonly used method, which can accurately reflect the relationship between the state transition process and the dynamic logic gate transfer in the dynamic fault tree. When the complexity or scale of system is increasing, the Markov model encountered a problem of state space explosion leading to increase troubles. To solve the above problems, a modular approach is needed. Based on the modular approach, a hybrid fault module was researched in this paper. Firstly, the stackable fault subtree containing complex static/dynamic logic gate is transformed into four common combinational logic gates through preprocessing of the dynamic gate in the module. Then, the complexity of the model was reduced by incorporating four common combinational logic gates and using the binary decision graph to solve variable ordering in the calculation of failure probability of static subtree. Moreover, the calculating process of complex mixed logic gate fault tree can be simplified. An example of the ammonium nitrate/fuel explosive production system for BCZH-15 explosive vehicle was used to verify the feasibility of the presented method.

A robust sperm cell tracking algorithm using uneven lighting image fixing and improved branch and bound algorithm

An accurate and robust sperm cells tracking algorithm that is able to detect and track sperm cells in videos with high accuracy and efficiency is presented. It is fast enough to process approximately 30 frames per second. It can find the correct path and measure motility parameters for each sperm. It can also adapt with different types of images coming from different cameras and bad recording conditions. Specifically, a new way is offered to optimize uneven lighting images to improve sperm cells detection which gives us the ability to get more accurate tracking results. The shape of each detected object is used to specify collided sperms and utilized dynamic gates which become bigger and smaller according to the sperm cell's speed. For assigning tracks to the detected sperm cells positions an improved version of branch and bound algorithm which is faster than the normal one is offered. This sperm cells tracking algorithm outperforms many of the previous algorithms as it has lower error rate in both sperm detection and tracking. It is compared with six other algorithms, and it gives lower tracking error rates. This method will allow doctors and researchers to obtain sperm motility data instantly and accurately.

Voltage controlled N\xe9el vector rotation in zero magnetic field

Multi-functional thin films of boron (B) doped Cr2O3 exhibit voltage-controlled and nonvolatile Néel vector reorientation in the absence of an applied magnetic field, H. Toggling of antiferromagnetic states is demonstrated in prototype device structures at CMOS compatible temperatures between 300 and 400 K. The boundary magnetization associated with the Néel vector orientation serves as state variable which is read via magnetoresistive detection in a Pt Hall bar adjacent to the B:Cr2O3 film. Switching of the Hall voltage between zero and non-zero values implies Néel vector rotation by 90 degrees. Combined magnetometry, spin resolved inverse photoemission, electric transport and scanning probe microscopy measurements reveal B-dependent TN and resistivity enhancement, spin-canting, anisotropy reduction, dynamic polarization hysteresis and gate voltage dependent orientation of boundary magnetization. The combined effect enables H = 0, voltage controlled, nonvolatile Néel vector rotation at high-temperature. Theoretical modeling estimates switching speeds of about 100 ps making B:Cr2O3 a promising multifunctional single-phase material for energy efficient nonvolatile CMOS compatible memory applications.

Performance comparison of RF energy harvesting rectifiers designed in CMOS FDSOI 28 nm with dynamic back gate biasing and BiCMOS 55 nm technology

AbstractA comparison between two Dickson voltage multipliers realized in two technologies, fully depleted silicon on insulator (FDSOI) 28 nm and Bipolar CMOS (BiCMOS) 55 nm is presented. The assessment is based on the I–V characteristics measurements of transistors configured as diodes; and on the measurements of one and two stages of Dickson multipliers designed for RF energy harvesting. The I–V characteristics show that FDSOI technology is profitable owing to its smaller threshold voltage (Vth), and a leakage current less than that of BiCMOS. Consequently, for the same input voltage, the output voltage acquired in FDSOI is greater than that achieved with BiCMOS. Moreover, for rectifiers designed in FDSOI, a dynamic back gate bias could be employed to enhance the performance by adjusting dynamically the Vth and the leakage current.