A dual-polarization higher-order mode converter is proposed for visible light, which operates within the (400–700) nm range, to enhance data capacity in on-chip visible light communication systems. The proposed structure is optimized at wavelengths of 410 nm, 560 nm, and 660 nm to cover the entire visible spectrum. These three optimized designs, in particular, have an intrinsic property wherein they can be optimized to simultaneously convert both polarized fundamental (TE0) and fundamental (TM0) modes to the second higher-order (TE2) and (TM2) modes, providing significant advantages for hybrid multiplexing systems like PDM-MDM and PDM-WDM schemes. The mode converters are constructed on a silicon nitride waveguide. This waveguide is etched and filled with silicon dioxide material to create two dielectric substrips, followed by an additional rectangle shape etched using the same process into the propagating waveguide. This alteration enhances insertion loss and diminishes crosstalk to the fundamental mode. The devices achieve a broad operating bandwidth of approximately 100 nm while maintaining a compact footprint of only 1µm×1.754µm for the entire device at the center wavelength of 560 nm. Upon optimizing the suggested structure, a TE0-to-TE2 mode converter with a modal conversion efficiency of 94% is designed at the wavelength of 410 nm. The insertion loss is 0.6025 dB, and the crosstalk with the transverse electric fundamental mode TE0 is 35 dB. The reported devices feature a straightforward structure with low insertion loss and minimal crosstalk.