Drive-in Temperature Research Articles

An investigation of minority carrier lifetime in silicon doped either with zinc or cobalt†

The effect of the diffused deep level impurities, cobalt and zinc, on the lifetime of minority carriers in both p–type and n–type silicon has been studied using C—t measurements on Al–SiO2–Si MOS structures. It has been found that both cobalt and zine possess the property of lifetime reduction in silicon, but covalt is less effective in either n– or p–type silicon than zinc, especially for drive-in temperatures below 1000°C.