Double Barrier Resonant Tunneling Device Research Articles

Observation of intrinsic bistability in resonant tunnelling devices

We report the first unambiguous observation of intrinsic bistability due to space charge build-up in an asymmetric GaAs/(AlGa)As double-barrier resonant tunnelling device.

Wigner function study of a double quantum barrier resonant tunnelling diode

Resonant tunnelling structures are receiving attention as a testbed for theoretical approaches to quantum transport. We present a Wigner function study of a double quantum barrier resonant tunnelling device formed by layers of AlGaAs in GaAs. Our study deals with the influence of the boundary conditions on the initial distribution as well as on the time-evolution of the system. We use a Gaussian wave packet to study the numerical effects of the boundaries. We attempt to solve the system in both the time-evolution and steady-state cases, including self-consistency in the potential.